AT2140K6-5.0TRG1 [BCDSEMI]
High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes; 高性能独立电视， 4个I / O ， CI / O - VSS \u003c 0.6pF ， VCC与阻塞二极管
| 型号： | AT2140K6-5.0TRG1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes |
| 文件： | 总7页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Datasheet
High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes
AT2140
Features
General Description
•
Low Clamping Voltage:
BCD ITVS (Integrated Transient Voltage Suppression)
Typical 8V at 10A 100ns, TLP, VCC to VSS
Typical 9V at 10A 100ns, TLP, I/O to VSS
9.5V at 12A 8μs/20μs, VCC to VSS
8.5V at 6A 8μs/20μs, I/O to VSS
IEC 61000-4-2:
±30kV (VCC to VSS, Air)
±30kV (VCC to VSS, Contact)
IEC 61000-4-2:
+28kV, -15kV (I/O to VSS, Air)
+24kV, -14kV (I/O to VSS, Contact)
IEC 61000-4-5: ±12A (VCC to VSS)
IEC 61000-4-5: ±6A (I/O to VSS)
TLP Dynamic Resistance, I/O to VSS: 0.3Ω
Monolithic Silicon Technology
devices are designed and built using
a BCD
proprietary process based on BCD standard
technology. These devices integrate the various diodes,
transistors and resistors required to build these ITVS
products. These diodes and transistors feature low
parasitic resistance and the diodes also exhibit low
capacitance. Using these devices, BCD is able to
design voltage clamping products where low
capacitance associated with low dynamic resistance is
required.
•
•
•
•
•
•
The BCD AT2140 is a general purpose, high
performance and low cost device suitable for
protecting high speed data interfaces. The AT2140 is a
unique design integrating low capacitance steering
diodes and a clamping cell with associated blocking
diodes, specially created to protect sensitive
components connected to data transmission lines.
Applications
•
•
•
•
•
•
HDMI 1.3, High Definition Multi Media
IEEE 1394
Laptop and Personal Computers
Flat Panel Displays
Video Graphics Cards
SIM Ports
The AT2140 is available in SOT-23-6 package. This
package allows simple and optimal placement in
existing high-speed PCB layout.
SOT-23-6
Figure 1. Package Type of AT2140
Sep. 2012 Rev. 1.0
BCD Semiconductor Manufacturing Limited
1
Advance Datasheet
High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes
AT2140
Pin Configuration
K6 Package
(SOT-23-6)
Pin 1 Mark
6
5
4
1
2
3
Figure 2. Pin Configuration of AT2140 (Top View)
Circuit Diagram
Figure 3. Circuit Diagram of AT2140
Sep. 2012 Rev. 1.0
BCD Semiconductor Manufacturing Limited
2
Advance Datasheet
High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes
AT2140
Ordering Information
AT2140 A
-
A
Circuit Type
G1: Green
Package
K6: SOT-23-6
TR: Tape & Reel
5.0: Fixed Output 5.0V
Temperature
Package
Range
Part Number
Marking ID
Packing Type
SOT-23-6
-55 to 85°C
AT2140K6-5.0TRG1
GJQ
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
IPP(VCC-VSS)
IPP(I/O-VSS)
Value
±12
Unit
A
Peak Pulse Current (tp 8μs/20μs), VCC to VSS
Peak Pulse Current (tp 8μs/20μs) , I/O to VSS
±6
A
Operating Voltage (DC)
VCC to VSS
5.5
V
±30
IEC61000-4-2 ESD (Air)
kV
kV
I/O to VSS, VCC
Floating
VCC to VSS
I/O to VSS, VCC
Floating
+28/-15
±30
IEC61000-4-2 ESD (Contact)
+24/-14
12
120
A
W
A
VCC to VSS
I/O to VSS
IEC61000-4-5 (Lightning)
6
54
W
ºC
ºC
ºC
Lead Temperature (Soldering, 10sec)
Operating Temperature
TLEAD
260
-55 to 85
-55 to 150
Storage Temperature
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Sep. 2012 Rev. 1.0
BCD Semiconductor Manufacturing Limited
3
Advance Datasheet
High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes
AT2140
Electrical Characteristics
TA=25ºC, unless otherwise specified.
Parameter
Symbol
Conditions
Min Typ Max Unit
Working Voltage, VCC to VSS
Pin 5 to Pin 2
-0.7
5.0
V
μA
V
Channel Leakage Current
Reverse Breakdown Voltage, VCC to VSS
Holding Voltage
IR
VCC=5V,VSS=0V
IBV=1mA
1
VBR
VH
6
5.5
V
VCC to VSS
I/O to VSS
VCC to VSS
I/O to VSS
VCC to VSS
I/O to VSS
VCC to VSS
I/O to VSS
At 12A
At 6A
9.5
8.5
8.5
8.5
8
V
Clamping Voltage (Lightning)
(IEC61000-4-5)
V
9.5
9.5
V
Trigger Voltage
VTRIG
V
V
ESD Clamping Voltage
Dynamic Resistance
Channel Input Capacitance
At 10A, TLP, 100ns
9
V
0.2
0.3
Ω
Ω
VI/O=2.5V,VCC=5V,
VSS=0V,f=1MHz
I/O to VSS
CI/O
0.525
0.6
pF
Typical Performance Characteristics
TA=25°C, unless otherwise specified.
11
10
9
9.5
9.0
VCC to VSS
I/O to VSS
8.5
8
BV
VTRIG
8.0
7
VH
7.5
6
5
7.0
6.5
6.0
5.5
5.0
4
3
2
1
0
-60
-40
-20
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
8
9
10
Temperature (OC)
Voltage from VCC to VSS (V)
Voltage from I/O to VSS (V)
Figure 4. BV, Trigger Voltage, Holding Voltage
vs. Temperature
Figure 5. Current vs. Voltage
Sep. 2012 Rev. 1.0
BCD Semiconductor Manufacturing Limited
4
Advance Datasheet
High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes
AT2140
Typical Performance Characteristics (Continued)
TA=25°C, unless otherwise specified.
Current
Waveform
Current
Waveform
VCLAMPING
=8.5V
VCLAMPING
=9.6V
2V/div
2V/div
Voltage
Waveform
Voltage
Waveform
Current
Waveform,
(Surge, 8x20μs,
IPP=12A)
Current
Waveform,
(Surge, 8x20μs,
IPP=5.8A)
2A/div
1A/div
Time 10μs/div
Time 10μs/div
Figure 6. Waveform of I/O to GND (Positive)
Figure 7. Waveform of VCC to VSS (Positive)
9.0
8.5
8.0
7.5
7.0
6.5
6.0
IEC61000-4-5 (Lightning)
1
2
3
4
5
6
7
Current from I/O to VSS (A)
Figure 8. Clamping Voltage
vs. Current from I/O to VSS (8μs/20μs)
Sep. 2012 Rev. 1.0
BCD Semiconductor Manufacturing Limited
5
Advance Datasheet
High Performance ITVS, 4 I/Os, CI/O-VSS<0.6pF, VCC with Blocking Diodes
AT2140
Mechanical Dimensions
SOT-23-6
mm(inch) M I N
mm(inch) MAX
Unit:
Sep. 2012 Rev. 1.0
BCD Semiconductor Manufacturing Limited
6
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
- Headquarters
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-24162266, Fax: +86-21-24162277
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
Taiwan Office
USA Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Semiconductor (Taiwan) Company Limited
BCD Semiconductor Corp.
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
30920 Huntwood Ave. Hayward,
China
Taiwan
Tel: +886-2-2656 2808
CA 94544, USA
Tel: +86-755-8826 7951
Tel : +1-510-324-2988
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
Fax: +1-510-324-2788
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