AP2122AK-3.2TRE1 [BCDSEMI]
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR; 高速度，超低噪音LDO稳压器
| 型号： | AP2122AK-3.2TRE1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
| 文件： | 总20页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
General Description
Features
The AP2122 series are positive voltage regulator ICs
fabricated by CMOS process. Each of these ICs con-
sists of a voltage reference, an error amplifier, a resis-
tor network for setting output voltage, a current limit
circuit for current protection and a chip enable circuit .
·
Low Dropout Voltage at I
=100mA: 150mV
OUT
Typical (Except 1.5V Version)
·
·
·
·
Low Standby Current: 0.1µA Typical
Low Quiescent Current: 25µA Typical
High Ripple Rejection: 70dB Typical（f=10kHz）
Maximum Output Current: More Than 150mA
(300mA Limit)
The AP2122 series feature high ripple rejection, low
dropout voltage, low noise, high output voltage accu-
racy, and low current consumption which make them
ideal for use in various battery-powered devices.
·
Extremely Low Noise: 30µVrms (10Hz to
100kHz)
·
·
·
·
·
Excellent Line Regulation: 4mV Typical
Excellent Load Regulation: 12mV Typical
High Output Voltage Accuracy: ±2%
Excellent Line and Load Transient Response
Compatible with Low ESR Ceramic Capacitor (as
Low as 1µF)
The AP2122 series have 1.5V, 1.8V, 2.5V, 2.8V, 3.0V,
3.2V and 3.3V versions.
The AP2122 are available in standard SOT-23-5 pack-
age.
Applications
·
·
·
·
·
Mobile Phones, Cordless Phones
MP3/4
Portable Electronic Devices
Cameras, Video Recorders
Sub-board Power Supplies for Telecom Equip-
ment
·
Battery Powered Equipment
SOT-23-5
Figure 1. Package Type of AP2122
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Pin Configuration
K Package
(SOT-23-5)
5
4
1
VOUT
GND
VIN
NC
CE
2
3
Figure 2. Pin Configuration of AP2122 (Top View)
Pin Description
Pin Number
Pin Name
Function
1
VOUT
Regulated output voltage
2
3
GND
VIN
Ground
Input voltage
4
5
CE
NC
Active high enable input pin. Logic high=enable, logic low=shutdown
No connection
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Functional Block Diagram
1
3
V
V
IN
OUT
VREF
CURRENT LIMIT
4
2
CE
GND
Figure 3. Functional Block Diagram of AP2122
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Ordering Information
AP2122
-
E1: Lead Free
Circuit Type
TR: Tape and Reel
A: Active High
(Pull-down resistor built-in)
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.2: Fixed Output 3.2V
3.3: Fixed Output 3.3V
Package
K: SOT-23-5
Package Temperature Range
Condition
Part Number
Marking ID
Packing Type
Active High (Pull-down resistor built-in) AP2122AK-1.5TRE1 E2Z
Active High (Pull-down resistor built-in) AP2122AK-1.8TRE1 E2U
Active High (Pull-down resistor built-in) AP2122AK-2.5TRE1 E2V
Active High (Pull-down resistor built-in) AP2122AK-2.8TRE1 E2W
Active High (Pull-down resistor built-in) AP2122AK-3.0TRE1 E2X
Active High (Pull-down resistor built-in) AP2122AK-3.2TRE1 E3Y
Active High (Pull-down resistor built-in) AP2122AK-3.3TRE1 E2Y
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
-40 to 85oC
SOT-23-5
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Enable Input Voltage
VCE
IOUT
TJ
-0.3 to VIN+0.3
V
Output Current
300
150
mA
oC
oC
oC
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
Thermal Resistance (Note 2)
TSTG
TLEAD
θJA
-65 to 150
260
oC/W
V
250
ESD (Human Body Model)
ESD (Machine Model)
ESD
ESD
2000
200
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-
perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max)
-
TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
2
6
V
oC
Operating Junction Temperature Range
TJ
-40
85
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics
AP2122-1.5 Electrical Characteristics
≤TJ≤
(VIN=2.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VIN=2.5V
VOUT
Output Voltage
1.47
1.5
1.53
V
1mA≤IOUT≤30mA
Input Voltage
VIN
6
V
Output Current
IOUT
VIN-VOUT=1V
150
mA
VIN=2.5V
VRLOAD
Load Regulation
Line Regulation
12
4
40
16
mV
mV
1mA≤IOUT≤80mA
2.3V≤VIN≤6V
IOUT=30mA
VRLINE
IOUT=10mA
IOUT=100mA
IOUT=150mA
400
400
400
600
600
600
VDROP
Dropout Voltage
mV
IQ
VIN=2.5V, IOUT=0mA
Quiescent Current
Standby Current
25
0.1
70
50
1
µA
µA
VIN=2.5V
ISTD
VCE in OFF mode
Ripple 0.5Vp-p, f=10kHz
VIN=2.5V
Power Supply
Rejection Ratio
PSRR
dB
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ILIMIT
±150
±100
50
Output Voltage
Temperature Coefficient
IOUT=30mA
ppm/oC
mA
Short Current Limit
RMS Output Noise
VOUT=0V
TA=25oC
VNOISE
30
µVrms
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
CE input voltage "High"
CE input voltage "Low"
1.5
2.5
V
V
0.25
10
CE Pull-down Internal
Resistance
RPD
5
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics (Continued)
AP2122-1.8 Electrical Characteristics
≤TJ≤
(VIN=2.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VIN=2.8V
VOUT
Output Voltage
1.764
1.8
1.836
V
1mA≤IOUT≤30mA
Input Voltage
VIN
6
V
Output Current
IOUT
VIN-VOUT=1V
150
mA
VIN=2.8V
VRLOAD
Load Regulation
Line Regulation
12
4
40
16
mV
mV
1mA≤IOUT≤80mA
2.3V≤VIN≤6V
IOUT=30mA
VRLINE
IOUT=10mA
IOUT=100mA
IOUT=150mA
20
40
VDROP
Dropout Voltage
mV
150
200
300
400
IQ
VIN=2.8V, IOUT=0mA
Quiescent Current
Standby Current
25
0.1
70
50
1
µA
µA
VIN=2.8V
ISTD
VCE in OFF mode
Ripple 0.5Vp-p, f=10kHz
VIN=2.8V
Power Supply
Rejection Ratio
PSRR
dB
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ILIMIT
±180
±100
50
Output Voltage
Temperature Coefficient
IOUT=30mA
ppm/oC
mA
Short Current Limit
RMS Output Noise
VOUT=0V
TA=25oC
VNOISE
30
µVrms
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
CE input voltage "High"
CE input voltage "Low"
1.5
2.5
V
V
0.25
10
CE Pull-down Internal
Resistance
RPD
5
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics (Continued)
AP2122-2.5 Electrical Characteristics
≤TJ≤
(VIN=3.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=3.5V
Min
Typ
Max
Unit
VOUT
Output Voltage
2.45
2.5
2.55
V
1mA≤IOUT≤30mA
Input Voltage
VIN
6
V
Output Current
IOUT
VIN-VOUT=1V
150
mA
VIN=3.5V
VRLOAD
Load Regulation
Line Regulation
12
4
40
16
mV
mV
1mA≤IOUT≤80mA
3V≤VIN≤6V
IOUT=30mA
VRLINE
IOUT=10mA
IOUT=100mA
IOUT=150mA
20
40
VDROP
Dropout Voltage
mV
150
200
300
400
IQ
VIN=3.5V, IOUT=0mA
Quiescent Current
Standby Current
25
0.1
70
50
1
µA
µA
VIN=3.5V
ISTD
VCE in OFF mode
Ripple 0.5Vp-p, f=10kHz
VIN=3.5V
Power Supply
Rejection Ratio
PSRR
dB
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ILIMIT
±250
±100
50
Output Voltage
Temperature Coefficient
IOUT=30mA
ppm/oC
mA
Short Current Limit
RMS Output Noise
VOUT=0V
TA=25oC
VNOISE
30
µVrms
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
CE input voltage "High"
CE input voltage "Low"
1.5
2.5
V
V
0.25
10
CE Pull-down Internal
Resistance
RPD
5
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics (Continued)
AP2122-2.8 Electrical Characteristics
≤TJ≤
(VIN=3.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VIN=3.8V
VOUT
Output Voltage
2.744
2.8
2.856
V
1mA≤IOUT≤30mA
Input Voltage
VIN
6
V
Output Current
IOUT
VIN-VOUT=1V
150
mA
VIN=3.8V
VRLOAD
Load Regulation
Line Regulation
12
4
40
16
mV
mV
1mA≤IOUT≤80mA
3.3V≤VIN≤6V
IOUT=30mA
VRLINE
IOUT=10mA
IOUT=100mA
IOUT=150mA
20
40
VDROP
Dropout Voltage
mV
150
200
300
400
IQ
VIN=3.8V, IOUT=0mA
Quiescent Current
Standby Current
25
0.1
70
50
1
µA
µA
VIN=3.8V
ISTD
VCE in OFF mode
Ripple 0.5Vp-p, f=10kHz
VIN=3.8V
Power Supply
Rejection Ratio
PSRR
dB
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ILIMIT
±280
±100
50
Output Voltage
Temperature Coefficient
IOUT=30mA
ppm/oC
mA
Short Current Limit
RMS Output Noise
VOUT=0V
TA=25oC
VNOISE
30
µVrms
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
CE input voltage "High"
CE input voltage "Low"
1.5
2.5
V
V
0.25
10
CE Pull-down Internal
Resistance
RPD
5
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
9
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics (Continued)
AP2122-3.0 Electrical Characteristics
≤TJ≤
(VIN=4V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VIN=4V
VOUT
Output Voltage
2.94
3.0
3.06
V
1mA≤IOUT≤30mA
Input Voltage
VIN
6
V
Output Current
IOUT
VIN-VOUT=1V
150
mA
VIN=4V
VRLOAD
Load Regulation
Line Regulation
12
4
40
16
mV
mV
1mA≤IOUT≤80mA
3.5V≤VIN≤6V
IOUT=30mA
VRLINE
IOUT=10mA
IOUT=100mA
20
40
VDROP
Dropout Voltage
mV
150
200
300
400
I
OUT=150mA
IQ
VIN=4V, IOUT=0mA
Quiescent Current
Standby Current
25
0.1
70
50
1
µA
µA
VIN=4V
ISTD
VCE in OFF mode
Ripple 0.5Vp-p, f=10kHz
VIN=4V
Power Supply
Rejection Ratio
PSRR
dB
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ILIMIT
±300
±100
50
Output Voltage
Temperature Coefficient
IOUT=30mA
ppm/oC
mA
Short Current Limit
RMS Output Noise
VOUT=0V
TA=25oC
VNOISE
30
µVrms
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
CE input voltage "High"
CE input voltage "Low"
1.5
2.5
V
V
0.25
10
CE Pull-down Internal
Resistance
RPD
5
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
10
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics (Continued)
AP2122-3.2 Electrical Characteristics
≤TJ≤
(VIN=4.2V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=4.2V
Min
Typ
Max
Unit
VOUT
Output Voltage
3.136
3.2
3.264
V
1mA≤IOUT≤30mA
Input Voltage
VIN
6
V
Output Current
IOUT
VIN-VOUT=1V
150
mA
VIN=4.2V
VRLOAD
Load Regulation
Line Regulation
12
4
40
16
mV
mV
1mA≤ IOUT≤ 80mA
3.7V≤VIN≤6V
IOUT=30mA
VRLINE
IOUT=10mA
IOUT=100mA
IOUT=150mA
20
40
VDROP
Dropout Voltage
mV
150
200
300
400
IQ
VIN=4.2V, IOUT=0mA
Quiescent Current
Standby Current
25
0.1
70
50
1
µA
µA
VIN=4.2V
ISTD
VCE in OFF mode
Ripple 0.5Vp-p, f=10kHz
VIN=4.2V
Power Supply
Rejection Ratio
PSRR
dB
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ILIMIT
±320
±100
50
Output Voltage
Temperature Coefficient
IOUT=30mA
ppm/oC
mA
Short Current Limit
RMS Output Noise
VOUT=0V
TA=25oC
VNOISE
30
µVrms
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
CE input voltage "High"
CE input voltage "Low"
1.5
2.5
V
V
0.25
10
CE Pull-down Internal
Resistance
RPD
5
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
11
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Electrical Characteristics (Continued)
AP2122-3.3 Electrical Characteristics
≤TJ≤
(VIN=4.3V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=4.3V
Min
Typ
Max
Unit
VOUT
Output Voltage
3.234
3.3
3.366
V
1mA≤IOUT≤30mA
Input Voltage
VIN
6
V
Output Current
IOUT
VIN-VOUT=1V
150
mA
VIN=4.3V
VRLOAD
Load Regulation
Line Regulation
12
4
40
16
mV
mV
1mA≤ IOUT≤ 80mA
3.8V≤VIN≤6V
IOUT=30mA
VRLINE
IOUT=10mA
IOUT=100mA
IOUT=150mA
20
40
VDROP
Dropout Voltage
mV
150
200
300
400
IQ
VIN=4.3V, IOUT=0mA
Quiescent Current
Standby Current
25
0.1
70
50
1
µA
µA
VIN=4.3V
ISTD
VCE in OFF mode
Ripple 0.5Vp-p, f=10kHz
VIN=4.3V
Power Supply
Rejection Ratio
PSRR
dB
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ILIMIT
±330
±100
50
Output Voltage
Temperature Coefficient
IOUT=30mA
ppm/oC
mA
Short Current Limit
RMS Output Noise
VOUT=0V
TA=25oC
VNOISE
30
µVrms
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
CE input voltage "High"
CE input voltage "Low"
1.5
2.5
V
V
0.25
10
CE Pull-down Internal
Resistance
RPD
5
MΩ
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
12
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Typical Performance Characteristics
3.5
1.5
3.0
1.2
AP2122-3.0
2.5
VIN=3.3V
VIN=4V
2.0
0.9
VIN=6V
1.5
0.6
AP2122-1.5
1.0
VIN=2.0V
VIN=2.5V
VIN=3.0V
0.3
0.0
0.5
0.0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
Output Current (mA)
Output Current (mA)
Figure 4. Output Voltage vs. Output Current
Figure 5. Output Voltage vs. Output Current
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.50
1.25
1.00
0.75
0.50
0.25
0.00
AP2122-3.0
IOUT=30mA
AP2122-1.5
IOUT=30mA
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Input Voltage (V)
Input Voltage (V)
Figure 6. Output Voltage vs. Input Voltage
Figure 7. Output Voltage vs. Input Voltage
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
13
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Typical Performance Characteristics (Continued)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Minimum Operating Requirement
AP2122-3.0
AP2122-1.5
160
0
40
80
120
160
200
0
40
80
120
200
Output Current (mA)
Output Current (mA)
Figure 9. Dropout Voltage vs. Output Current
Figure 8. Dropout Voltage vs. Output Current
3.10
3.08
3.06
3.04
3.02
3.00
2.98
2.96
2.94
2.92
2.90
1.60
1.58
1.56
1.54
1.52
1.50
1.48
1.46
1.44
1.42
1.40
AP2122-3.0
VIN=4V
AP2122-1.5
VIN=2.5V
IOUT=30mA
IOUT=30mA
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
Junction Temperature (oC)
Junction Temperature (oC)
Figure 10. Output Voltage vs. Junction Temperature
Figure 11. Output Voltage vs. Junction Temperature
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
14
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Typical Performance Characteristics (Continued)
60
50
40
30
20
10
0
60
50
40
30
20
10
0
AP2122-3.0
OUT=0mA
AP2122-1.5
I
IOUT=0mA
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Input Voltage (V)
Input Voltage (V)
Figure 12. Supply Current vs. Input Voltage
Figure 13. Supply Current vs. Input Voltage
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
AP2122-1.5
VIN=2.5V
AP2122-3.0
VIN=4V
IOUT=0mA
IOUT=0mA
0
0
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
Junction Temperature (oC)
Junction Temperature (oC)
Figure 14. Supply Current vs. Junction Temperature
Figure 15. Supply Current vs. Junction Temperature
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
15
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Typical Performance Characteristics (Continued)
7
6
5.5
4.5
3.5
2.5
AP2122-3.0
AP2122-1.5
5
4
0.05
0
0.05
0
-0.05
-0.1
-0.05
-0.1
Time (20µs/Div)
Time (40µs/Div)
Figure 17. Line Transient
(Conditions: IOUT=30mA, CIN=1µF, COUT=1µF)
Figure 16. Line Transient
(Conditions: IOUT=30mA, CIN=1µF, COUT=1µF)
3.2
1.7
AP2122-3.0
AP2122-1.5
1.6
1.5
3.1
3.0
2.9
1.4
200
100
100
50
0
0
-50
-100
Time (200µs/Div)
Time (200µs/Div)
Figure 19. Load Transient
Figure 18. Load Transient
(Conditions: VIN=4V, CIN=1µF, COUT=1µF)
(Conditions: VIN=2.5V, CIN=1µF, COUT=1µF)
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
16
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Typical Performance Characteristics (Continued)
100
100
AP2122-3.0
VIN=4V
AP2122-1.5
VIN=2.5V
90
80
70
60
50
40
30
20
10
0
80
60
40
20
0
IOUT=30mA
IOUT=30mA
CIN=COUT=1µF
CIN=COUT=1µF
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
Figure 20. PSRR vs. Frequency
Figure 21. PSRR vs. Frequency
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
17
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Typical Application
AP2122-3.0
VIN=4V
VOUT=3V
VOUT
VIN
VIN
VOUT
GND
COUT
CE
NC
1µF
CIN
1µF
Note: Filter capacitors are required at the AP2122's input and output. 1µF capacitor is required at the input. The
minimum output capacitance required for stability should be more than 1µF with ESR from 0.01Ω to 100Ω.
Ceramic capacitors are recommended.
Figure 22. Typical Application of AP2122
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
18
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2122
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
0.950(0.037)
TYP
1.800(0.071)
2.000(0.079)
0.000(0.000)
0.100(0.004)
1.050(0.041)
1.150(0.045)
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
19
http://www.bcdsemi.com
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cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
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