AP2125 [BCDSEMI]
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR; 300毫安高速，极低的噪声CMOS LDO稳压器
| 型号： | AP2125 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
| 文件： | 总27页 (文件大小：675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
General Description
Features
The AP2125 series are 300mA, positive voltage regu-
lator ICs fabricated by CMOS process.
·
·
Excellent Ripple Rejection: 70dB Typical (1.8V
Version)
Low Dropout Voltage: 65mV (I
3.3V Version)
=100mA,
OUT
Each of these ICs is equipped with a voltage reference,
an error amplifier, a resistor network for setting output
voltage, a chip enable circuit, a current limit circuit and
OTSD (over temperature shut down) circuit to prevent
the IC from over current and over temperature.
·
·
·
·
·
·
·
Low Standby Current: 0.01µA Typical
Low Quiescent Current: 60µA Typical
Extremely Low Noise: 50µVrms Typical
Maximum Output Current: 300mA (Min.)
High Output Voltage Accuracy: ±2%
Compatible with Low ESR Ceramic Capacitor
Excellent Line/Load Regulation
The AP2125 series have features of high ripple rejec-
tion, low dropout voltage, low noise, high output volt-
age accuracy and low current consumption which
make them ideal for use in various battery-powered
apparatus.
Applications
The AP2125 have 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.15V
and 4.2V fixed voltage versions.
·
·
·
·
·
·
CDMA/GSM Cellular Handsets
Battery-powered Equipments
Laptops, Palmtops, Notebook Computers
Hand-held Instruments
PCMCIA Cards
Portable Information Appliances
These ICs are available in tiny SC-70-5 and SC-82
packages as well as industry standard SOT-23-3 and
SOT-23-5 packages.
SC-82
SOT-23-3
SOT-23-5
SC-70-5
Figure 1. Package Types of AP2125
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Pin Configuration
N Package
(SOT-23-3)
K/KS Package
KC Package
(SC-82)
(SOT-23-5/SC-70-5)
VIN
3
CE
1
2
4
3
VIN
1
2
3
5
4
VOUT
VIN
GND
CE
GND
VOUT
1
2
NC
VOUT
GND
Figure 2. Pin Configuration of AP2125 (Top View)
Pin Description
Pin Number
Pin Name
Function
SOT-23-3 SOT-23-5/ SC-82
SC-70-5
3
1
1
4
VIN
Input voltage
Ground
2
3
4
5
2
1
GND
CE
Active high enable input pin. Logic high=enable, logic low=shutdown
NC
No connection
2
3
VOUT
Regulated output voltage
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
2
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Functional Block Diagram
3 (1)
CE
Shutdown
and
Logic Control
Shutdown
and
Logic Control
1 (4)
3
VIN
VIN
VREF
VREF
MOS Driver
MOS Driver
5 (3)
2
VOUT
VOUT
Current Limit
Current Limit
and
and
Thermal
Protection
Thermal Protection
2 (2)
1
GND
GND
A(B)
A
SOT-23-3
SOT-23-5/SC-70-5
SC-82
B
Figure 3. Functional Block Diagram of AP2125
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Ordering Information
AP2125
-
E1: Lead Free
G1: Green
Circuit Type
Package
TR: Tape and Reel
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
N:
K:
SOT-23-3
SOT-23-5
KS: SC-70-5
KC: SC-82
4.15: Fixed Output 4.15V
4.2: Fixed Output 4.2V
Part Number
Green
Marking ID
Temperature
Package
Packing Type
Range
Lead Free
Lead Free
EJ2
Green
GJ2
AP2125N-1.8TRE1
AP2125N-2.5TRE1
AP2125N-2.8TRE1
AP2125N-3.0TRE1
AP2125N-3.3TRE1
AP2125N-4.2TRE1
AP2125K-1.8TRE1
AP2125K-2.5TRE1
AP2125K-2.8TRE1
AP2125K-3.0TRE1
AP2125K-3.3TRE1
AP2125N-1.8TRG1
AP2125N-2.5TRG1
AP2125N-2.8TRG1
AP2125N-3.0TRG1
AP2125N-3.3TRG1
AP2125N-4.2TRG1
AP2125K-1.8TRG1
AP2125K-2.5TRG1
AP2125K-2.8TRG1
AP2125K-3.0TRG1
AP2125K-3.3TRG1
AP2125K-4.15TRG1
AP2125K-4.2TRG1
AP2125KS-1.8TRG1
AP2125KS-2.5TRG1
AP2125KS-2.8TRG1
AP2125KS-3.0TRG1
AP2125KS-3.3TRG1
AP2125KS-4.2TRG1
AP2125KC-1.8TRG1
AP2125KC-2.5TRG1
AP2125KC-2.8TRG1
AP2125KC-3.0TRG1
AP2125KC-3.3TRG1
AP2125KC-4.2TRG1
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
EJ4
GJ4
GJ5
GJ6
GJ7
GJ3
GCB
GCD
GCE
GCF
GCG
GCJ
GCC
B6
EJ5
-40 to 85oC
SOT-23-3
EJ6
EJ7
EJ3
ECB
ECD
ECE
ECF
ECG
-40 to 85oC
SOT-23-5
AP2125K-4.2TRE1
AP2125KS-1.8TRE1
AP2125KS-2.5TRE1
AP2125KS-2.8TRE1
AP2125KS-3.0TRE1
AP2125KS-3.3TRE1
AP2125KS-4.2TRE1
AP2125KC-1.8TRE1
AP2125KC-2.5TRE1
AP2125KC-2.8TRE1
AP2125KC-3.0TRE1
AP2125KC-3.3TRE1
AP2125KC-4.2TRE1
ECC
26
35
27
36
28
34
91
96
92
97
93
95
C5
B7
-40 to 85oC
SC-70-5
C6
B8
C4
T1
T6
T2
-40 to 85oC
SC-82
T7
T3
T5
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
4
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Enable Input Voltage
VCE
IOUT
TJ
-0.3 to VIN+0.3
450
V
Output Current
mA
oC
oC
oC
Junction Temperature
150
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
TSTG
TLEAD
-65 to 150
260
SOT-23-3
200
200
300
300
SOT-23-5
SC-70-5
SC-82
oC/W
θJA
Thermal Resistance
ESD (Human Body Model)
ESD (Machine Model)
ESD
ESD
6000
400
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
VOUT+0.5V
6
V
oC
Operating Ambient Temperature Range
TA
-40
85
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics
AP2125-1.8 Electrical Characteristics
≤TJ≤
(VIN=2.8V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=2.8V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
1.764
1.8
1.836
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=1.76V
300
360
6
mA
VIN=2.8V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
2.8V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
10
12
VDROP
Dropout Voltage
mV
100
300
120
360
IQ
VIN=2.8V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=2.8V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
70
70
dB
dB
Ripple 0.5Vp-p
VIN=2.8V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
6
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-2.5 Electrical Characteristics
≤TJ≤
(VIN=3.5V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=3.5V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
2.45
2.5
2.55
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=2.45V
300
360
10
mA
VIN=3.5V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
3.5V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
6.5
65
10
VDROP
Dropout Voltage
mV
100
300
200
IQ
VIN=3.5V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=3.5V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
65
65
dB
dB
Ripple 0.5Vp-p
VIN=3.5V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-2.8 Electrical Characteristics
≤TJ≤
(VIN=3.8V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=3.8V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
2.744
2.8
2.856
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=2.74V
300
360
11
mA
VIN=3.8V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
3.8V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
6.5
65
10
VDROP
Dropout Voltage
mV
100
300
200
IQ
VIN=3.8V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=3.8V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
65
65
dB
dB
Ripple 0.5Vp-p
VIN=3.8V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
8
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-3.0 Electrical Characteristics
≤TJ≤
(VIN=4.0V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=4.0V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
2.94
3.0
3.06
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=2.94V
300
360
12
mA
VIN=4.0V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
4.0V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
6.5
65
10
VDROP
Dropout Voltage
mV
100
300
200
IQ
VIN=4.0V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=4.0V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
65
65
dB
dB
Ripple 0.5Vp-p
VIN=4.0V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
9
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-3.3 Electrical Characteristics
≤TJ≤
(VIN=4.3V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=4.3V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
3.234
3.3
3.366
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=3.23V
300
360
13
mA
VIN=4.3V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
4.3V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
6.5
65
10
VDROP
Dropout Voltage
mV
100
300
200
IQ
VIN=4.3V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=4.3V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
65
65
dB
dB
Ripple 0.5Vp-p
VIN=4.3V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
10
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-4.15 Electrical Characteristics
≤TJ≤
(VIN=5.15V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=5.15V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
4.067
4.15
4.233
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=4.06V
300
360
13
mA
VIN=5.15V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
5.15V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
6.5
65
10
VDROP
Dropout Voltage
mV
100
300
200
IQ
VIN=5.15V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=5.15V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
65
65
dB
dB
Ripple 0.5Vp-p
VIN=5.15V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
11
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-4.2 Electrical Characteristics
≤TJ≤
(VIN=5.2V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=5.2V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
4.116
4.2
4.284
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=4.12V
300
360
13
mA
VIN=5.2V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
5.2V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
6.5
65
10
VDROP
Dropout Voltage
mV
100
300
200
IQ
VIN=5.2V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=5.2V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
65
65
dB
dB
Ripple 0.5Vp-p
VIN=5.2V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
12
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics
3.50
3.48
3.46
3.44
3.42
3.40
3.38
3.36
3.34
3.32
3.30
1.90
1.88
1.86
1.84
1.82
1.80
1.78
1.76
1.74
1.72
1.70
AP2125-1.8
VIN=2.8V
TC=25oC
AP2125-3.3
VIN=4.3V
TC=25oC
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Output Current (mA)
Output Current (mA)
Figure 5. Output Voltage vs. Output Current
Figure 4. Output Voltage vs. Output Current
400
360
320
280
240
200
160
120
80
400
360
320
280
240
200
160
120
80
AP2125-1.8
VIN=2.8V
AP2125-3.3
VIN=4.3V
TC=-40oC
TC=25oC
TC=85oC
TC=-40oC
TC=25oC
TC=85oC
40
40
0
0
0
30
60
90
120
150
180
210
240
270
300
0
30
60
90
120
150
180
210
240
270
300
Output Current (mA)
Output Current (mA)
Figure 6. Dropout Voltage vs. Output Current
Figure 7. Dropout Voltage vs. Output Current
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
400
360
320
280
240
200
160
120
80
400
360
320
280
240
200
160
120
80
IOUT=10mA
IOUT=100mA
IOUT=200mA
IOUT=300mA
AP2125-1.8
VIN=2.8V
IOUT=10mA
IOUT=100mA
IOUT=200mA
IOUT=300mA
AP2125-3.3
VIN=4.3V
40
40
0
0
-25
0
25
50
75
-25
0
25
50
75
Case Temperature (oC)
Case Temperature (oC)
Figure 9. Dropout Voltage vs. Case Temperature
Figure 8. Dropout Voltage vs. Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
3.6
3.2
2.8
2.4
2.0
1.6
1.2
AP2125-3.3
0.6
AP2125-1.8
TC=25oC
TC=25oC
0.8
0.4
VIN=4.3V
VIN=2.8V
VIN=6V
0.4
0.0
0.2
VIN=6V
0.0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
Output Current (mA)
Output Current (mA)
Figure 11. Current Limit
Figure 10. Current Limit
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
14
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
3.6
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
AP2125-3.3
VIN=4.3V
AP2125-1.8
VIN=2.8V
TC=-40oC
TC=25oC
TC=85oC
TC=-40oC
TC=25oC
TC=85oC
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
Output Current (mA)
Output Current (mA)
Figure 13. Current Limit
Figure 12. Current Limit
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1mA
100mA
300mA
1mA
100mA
300mA
AP2125-3.3
TC=25oC
AP2125-1.8
TC=25oC
0.0 0.5
1.0 1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
0.5
1.0
1.5
2.0 2.5
3.0 3.5 4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 14. Output Voltage vs. Input Voltage
Figure 15. Output Voltage vs. Input Voltage
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
15
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TC=-40oC
TC=25oC
TC=85oC
TC=-40oC
TC=25oC
TC=85oC
AP2125-1.8
TC=25oC
AP2125-3.3
TC=25oC
No Load
No Load
0.0
0.5
1.0
1.5 2.0
2.5
3.0
3.5
4.0
4.5
5.0 5.5
6.0
0.0
0.5
1.0 1.5
2.0
2.5
3.0
3.5 4.0
4.5
5.0
5.5 6.0
Input Voltage (V)
Input Voltage (V)
Figure 17. Output Voltage vs. Input Voltage
Figure 16. Output Voltage vs. Input Voltage
3.40
3.38
3.36
3.34
3.32
3.30
3.28
3.26
3.24
3.22
3.20
1.90
1.88
1.86
1.84
1.82
1.80
1.78
1.76
1.74
1.72
1.70
AP2125-3.3
VIN=4.3V
AP2125-1.8
VIN=2.8V
IOUT=10mA
IOUT=30mA
IOUT=100mA
IOUT=300mA
IOUT=10mA
IOUT=30mA
IOUT=100mA
IOUT=300mA
-25
0
25
50
75
-25
0
25
50
75
Case Temperature (oC)
Case Temperature (oC)
Figure 19. Output Voltage vs. Case Temperature
Figure 18. Output Voltage vs. Case Temperature
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
16
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
100
90
100
90
AP2125-3.3
No Load
AP2125-1.8
No Load
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
TC=-40oC
TC=25oC
TC=85oC
TC=-40oC
TC=25oC
TC=85oC
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage (V)
Input Voltage (V)
Figure 20. Supply Current vs. Input Voltage
Figure 21. Supply Current vs. Input Voltage
80
76
72
68
64
60
56
52
48
44
40
80
76
72
68
64
60
56
52
48
44
40
AP2125-3.3
VIN=4.3V
AP2125-1.8
VIN=2.8V
No Load
No Load
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Case Temperature (oC)
Case Temperature (oC)
Figure 22. Supply Current vs. Case Temperature
Figure 23. Supply Current vs. Case Temperature
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
17
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
130
120
110
100
90
150
140
130
120
110
100
90
80
70
80
TC=-40oC
TC=25oC
TC=85oC
70
60
TC=-40oC
TC=25oC
TC=85oC
60
50
50
40
40
30
30
AP2125-1.8
VIN=2.8V
AP2125-3.3
VIN=4.3V
20
20
10
10
0
0
0
50
100
150
200
250
300
350
400
0
50
100
150
200
250
300
350
400
450
500
Output Current (mA)
Output Current (mA)
Figure 25. Supply Current vs. Output Current
Figure 24. Supply Current vs. Output Current
120
110
100
90
80
70
60
50
40
30
20
10
0
150
135
120
105
90
VIN=2.8V
VIN=6V
75
VIN=4.3V
VIN=6V
60
45
30
AP2125-1.8
TC=25oC
AP2125-3.3
TC=25oC
15
0
0
40
80 120 160 200 240 280 320 360 400 440 480
Output Current (mA)
0
40
80
120
160
200
240
280
320
360
400
Output Current (mA)
Figure 27. Supply Current vs. Output Current
Figure 26. Supply Current vs. Output Current
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
18
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
AP2125-3.3
AP2125-1.8
5
4.8
3.8
4.5
4
2.8
0.02
0
0.05
0
-0.02
-0.05
Time (100µs/Div)
Time (40µs/Div)
Figure 29. Line Transient
Figure 28. Line Transient
(Conditions: IOUT=30mA, COUT=1µF, VIN=4 to 5V)
(Conditions: IOUT=30mA, COUT=1µF, VIN=2.8 to 3.8V)
AP2125-1.8
AP2125-3.3
1.84
3.34
3.32
3.3
1.82
1.8
100
50
0
100
50
0
Time (40µs/Div)
Time (40µs/Div)
Figure 31. Load Transient
Figure 30. Load Transient
(Conditions: IOUT=10 to 100mA, CIN=1µF,
COUT=1µF, VIN=2.8 V)
(Conditions: IOUT=10 to 100mA, CIN=1µF,
COUT=1µF, VIN=4.3 V)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
19
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
1000
AP2125-1.8
AP2125-2.8
C
IN = 1µF
3
COUT = 1µF
100
2
1
10
0
Stable Area
3
1
2
1
0.1
0
50
100
150
200
250
300
0
Output Current (mA)
Time (200µs/Div)
Figure 33. ESR vs. Output Current
Figure 32. Enable Input Response and Auto-discharge
(Conditions: VCE=0 to 3V, CIN=1µF,
C
OUT=1µF, VIN=3V, no load)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
AP2125-3.3
VIN=4.3V
AP2125-1.8
VIN=2.8V
IOUT=30mA
IOUT=30mA
10
100
1k
10k
100k
10
100
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
Figure 34. PSRR
Figure 35. PSRR
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
20
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
800
600
550
500
450
400
350
300
250
200
150
100
50
AP2125-3.3
Package: SC-70-5
No Heatsink
AP2125-1.8
Package: SC-70-5
No Heatsink
700
600
500
400
300
200
100
0
0
30
40
50
60
70
80
90
100
110
120
30
40
50
60
70
80
90
100
110
120
Ambient Temperature (oC)
Ambient Temperature (oC)
Figure 37. Power Dissipation vs. Ambient Temperature
Figure 36. Power Dissipation vs. Ambient Temperature
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
21
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Application
AP2125-1.8
VIN=2.8V
VOUT=1.8V
VOUT
VIN
VIN
VOUT
GND
COUT
1µF
CIN
1µF
AP2125-3.0
VIN=4V
VOUT=3V
VOUT
VIN
VIN
VOUT
GND
COUT
CE
NC
1µF
CIN
1µF
Figure 38. Typical Application of AP2125
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
22
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions
SOT-23-3
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.200(0.008)
0
°
0.950(0.037)
TYP
0.300(0.012)
0.500(0.020)
8
°
1.800(0.071)
2.000(0.079)
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
23
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
0.950(0.037)
TYP
1.800(0.071)
2.000(0.079)
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
24
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions (Continued)
SC-70-5
Unit: mm(inch)
0°
8°
2.000(0.079)
2.200(0.087)
0.150(0.006)
0.350(0.014)
0.200(0.008)
0.260(0.010)
0.460(0.018)
0.525(0.021)REF
0.650(0.026)TYP
0.080(0.003)
0.150(0.006)
0.000(0.000)
0.100(0.004)
1.200(0.047)
1.400(0.055)
0.900(0.035)
1.100(0.043)
0.900(0.035)
1.000(0.039)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
25
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions (Continued)
SC-82
Unit: mm(inch)
0.250(0.010)
0.400(0.016)
4
°
0.150(0.006)
Typ
12
°
1.150(0.045)
1.350(0.053)
4
°
0
°
°
12
°
8
0.100(0.004)
0.260(0.010)
0.260(0.010)
0.460(0.018)
1.800(0.071)
2.400(0.094)
0.350(0.014)
0.500(0.020)
1.800(0.071)
2.200(0.087)
1.300(0.051)
Typ
0.700(0.027)
1.000(0.039)
0.800(0.031)
1.100(0.043)
4
°
°
0.000(0.000)
0.100(0.004)
12
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
26
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
- Headquarters
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-24162266, Fax: +86-21-24162277
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
Taiwan Office
USA Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Semiconductor (Taiwan) Company Limited
BCD Semiconductor Corp.
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
30920 Huntwood Ave. Hayward,
China
Taiwan
Tel: +886-2-2656 2808
CA 94544, USA
Tel: +86-755-8826 7951
Tel : +1-510-324-2988
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
Fax: +1-510-324-2788
相关型号：
AP2125K-3.3TRG1
Fixed Positive LDO Regulator, 3.3V, 0.3V Dropout, CMOS, PDSO5, GREEN, SOT-23, 5 PIN
DIODES
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