AV8050S [AVICTEK]
NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管
| 型号： | AV8050S |
| 厂家： | 
Avic Technology |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
@vic AV8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
3
The @vic AV8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
1
2
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to @vic AV8550S
SOT-23
MARKING
D9
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
V
W
mA
°C
°C
30
20
5
1
700
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25℃)
Collector Current
Ic
Junction Temperature
Storage Temperature
Tj
TSTG
150
-65 ~ +150
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=100µA,IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
30
20
5
V
V
Ic=1mA,IB=0
IE=100µA,Ic=0
V
uA
nA
VCB=30V,IE=0
VEB=5V,Ic=0
1
Emitter Cut-Off Current
IEBO
100
DC Current Gain(note)
hFE1
VCE=1V,Ic=1mA
VCE=1V,Ic=150 mA
VCE=1V,Ic=500mA
Ic=500mA,IB=50mA
Ic=500mA,IB=50mA
VCE=1V,Ic=10mA
100
120
40
hFE2
110
400
hFE3
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VBE
0.5
1.2
1.0
V
V
V
QW-R206-001,A
@vic AV8050S
NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
VCE=10V,Ic=50mA
VCB=10V,IE=0
f=1MHz
MIN TYP MAX UNIT
fT
Cob
100
MHz
pF
9.0
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
0.5
0.4
3
2
10
I
I
I
B
=3.0mA
=2.5mA
=2.0mA
10
VCE=1V
B
B
VCE=1V
1
10
2
10
0.3
0.2
I
I
B
=1.5mA
=1.0mA
B
1
0
10
10
I
B
=0.5mA
0.1
0
0
-1
10
10
0
0.4
0.8
1.2
1.6
2.0
-1
10
0
1
2
3
10
0
0.2
0.4
0.6
0.8
1.0
10
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
3
10
10
10
Ic=10*I
B
VCE=10V
VBE(sat)
f=1MHz
3
2
2
10
I
E=0
10
10
2
1
1
10
10
10
VCE(sat)
1
0
0
10
10
10
3
0
1
2
3
10
0
1
2
3
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
QW-R206-001,A
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