ASDL-4860 [AVAGO]
High Power Infrared Emitter (850nm) in Surface Mount Package; 高功率红外发射器（ 850纳米）的表面贴装封装
| 型号： | ASDL-4860 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | High Power Infrared Emitter (850nm) in Surface Mount Package |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASDL-4860
High Power Infrared Emitter (850nm) in Surface Mount Package
Data Sheet
Description
Features
ASDL-4860 Infrared emitter is encapsulated in a compact
SMT package that is specially catered for High Power ap-
plication. This device represents best performance for
light output, fast switching and low thermal resistance
for heat dissipation. It utilizes AlGaAs LED technology
and is optimized with high efficiency at emissive wave-
length of 850nm.
• Top Emitting Surface Mount Infrared LED
• Ultra-Low Height Profile:
H = 1.5mm, W=6.0mm, L=6.0mm
• High Power
• High Speed
• Low Thermal Resistance
• 850nm Wavelength
• Design for High Power Application
• Design to Drive High Current
• Wide Viewing Angle
Applications
• High Speed Machine Automated System
• Non-Contact Position Sensing
• Optical Sensing
• Lead-Free and RoHS Compliant
• Tape & Reel for automation placement
• Infrared Data Transmission
• Security Applications
Ordering Information
Part Number
Packaging
Shipping Option
ASDL-4860-C22
Tape & Reel
2000pcs
Package Outline
Tape and Reel Dimensions
All Dimensions are in Millimeters
2
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Min.
Max
Unit
Reference
Peak Forward Current
I
1
A
T <10us
p
FPK
Duty Cycle=10%
Continuous Forward Current
Power Dissipation
I
500
mA
W
V
FDC
P
1.2
DISS
Reverse Voltage
V
5
r
Operating Temperature
Storage Temperature
LED Junction Temperature
Lead Soldering Temperature
T
-40
-40
100
°C
°C
°C
°C
O
T
S
100
T
J
125
260 for 5 sec
Electrical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
I =500mA
Forward Voltage
Reverse Voltage
Diode Capacitance
V
F
1.4
2.2
V
F
V
r
5
V
I =100uA
R
C
O
ꢀ50
20
pF
°C/W
V =0V, f=1MHz
r
Thermal Resistance,
Junction/Base
Rq
js
Optical Characteristics at 25°C
Parameter
Symbol
Min.
40
Typ.
45
Max.
Unit
mW/Sr
deg
nm
Condition
(1)
Average On-Axis Intensity
I
E
I =500mA
F
Viewing Angle
Peak wavelength
Spectral Width
Optical Rise Time
Optical Fall Time
2θ
1/2
120
850
40
λ
PK
I = 500mA
F
Δλ
nm
I = 20mA
F
t
t
15
ns
I = 20mA
F
r
10
ns
I = 20mA
F
f
Note (1): IE is measured with accuracy of + 11%
ꢀ
Typical Electrical / Optical Characteristics Curve (T = 25°C Unless Otherwise Stated)
A
80
1.2E-06
70
1.0E-06
60
8.0E-07
50
6.0E-07
4.0E-07
2.0E-07
0.0E+00
40
30
20
10
0
200
400
600
800
1000
800
80
1200
0
0
200
400
600
800
1000
IF (mA)
Peak Wavelength (nm)
Figure 2. Forward Current Vs Radiant Intensity
Figure 1. Peak Wavelength Vs Relative Radiant Power
3
1
2.5
2
0.8
0.6
0.4
0.2
0
1.5
1
0.5
0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
0
200
400
600
1000
IF (mA)
Figure 3. Forward Current Vs Forward Voltage
Figure 4. Angular Displacement Vs Relative Radiant Intensity
600
500
400
300
200
100
0
40
Solder Point Temperature (Ts)
0
20
30
60
100
10
70
90
50
Figure 5. Maximum Forward Current Vs Solder Point Temperature
4
Recommended Reflow Profile
MAX 260C
255
R3
R4
230
217
200
R2
180
60 sec to 90 sec
Above 217 C
150
R5
R1
120
80
25
0
100
150
200
P3
SOLDER
REFLOW
250
P4
COOL DOWN
300
t-TIME
(SECONDS)
50
P1
HEAT
UP
P2
SOLDER PASTE DRY
Maximum DT/Dtime
Process Zone
Heat Up
Symbol
DT
or Duration
P1, R1
P2, R2
25°C to 150°C
150°C to 200°C
ꢀ°C/s
Solder Paste Dry
Solder Reflow
100s to 180s
Pꢀ, Rꢀ
Pꢀ, R4
200°C to 260°C
260°C to 200°C
ꢀ°C/s
-6°C/s
Cool Down
P4, R5
200°C to 25°C
> 217°C
260°C
-6°C/s
60s to 90s
-
Time maintained above liquidus point , 217°C
Peak Temperature
Time within 5°C of actual Peak Temperature
Time 25°C to Peak Temperature
-
20s to 40s
8mins
25°C to 260°C
The reflow profile is a straight-line representation of a nominal temperature profile for a convective reflow solder
process. The temperature profile is divided into four process zones, each with different DT/Dtime temperature change
rates or duration. The DT/Dtime rates or duration are detailed in the above table. The temperatures are measured at
the component to printed circuit board connections.
In process zone P1, the PC board and component pins are heated to a temperature of 150°C to activate the flux in the
solder paste. The temperature ramp up rate, R1, is limited to 3°C per second to allow for even heating of both the PC
board and component pins.
Process zone P2 should be of sufficient time duration (100 to 180 seconds) to dry the solder paste. The temperature is
raised to a level just below the liquidus point of the solder.
Process zone P3 is the solder reflow zone. In zone P3, the temperature is quickly raised above the liquidus point of
solder to 260°C (500°F) for optimum results. The dwell time above the liquidus point of solder should be between 60
and 90 seconds. This is to assure proper coalescing of the solder paste into liquid solder and the formation of good
solder connections. Beyond the recommended dwell time the intermetallic growth within the solder connections
becomes excessive, resulting in the formation of weak and unreliable connections. The temperature is then rapidly
reduced to a point below the solidus temperature of the solder to allow the solder within the connections to freeze
solid.
Process zone P4 is the cool down after solder freeze. The cool down rate, R5, from the liquidus point of the solder
to 25°C (77°F) should not exceed 6°C per second maximum. This limitation is necessary to allow the PC board and
component pins to change dimensions evenly, putting minimal stresses on the component.
It is recommended to perform reflow soldering no more than twice.
5
Recommended Land Pattern
Note:
The additional solder resist is to improve heat dissipation.
The bigger the surface area, the better is the thermal dis-
sipation. The surface area depends on the substrate and
total power used. If MC (Metal Core) PCB is used, the ad-
ditional area will not be needed as the whole MC PCB
conducts heat.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-027ꢀEN - April 27, 2007
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