ASDL-5770-D31 [AVAGO]
High Performance Photodiode in Side Look Package; 在侧面看包装高性能光电二极管
| 型号： | ASDL-5770-D31 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | High Performance Photodiode in Side Look Package |
| 文件： | 总5页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASDL-5770
High Performance Photodiode in Side Look Package
Data Sheet
Description
Features
ASDL-5770 is a Silicon PIN Photodiode encapsulated in • Dark Blue Side Look Package
dark blue Side Look package. The added feature of a dark
tint acts as an optical filter to reduce effects of ambient
light from interfering with the Infrared signal. It is ideal
• High Sensitivity
• Low Dark Current
for applications from 700nm to 1100nm that require high • Wide Viewing Angle
sensitivity over wide viewing angle.
• Lead Free & ROHS Compliant
• Available in Tape & Reel
Applications
• IR Remote Control for Consumer Device
• IR Remote Control for Industrial Electronics &
Equipment
• High Speed IR data communication
ꢀ
Ordering Information
Part Number
Lead Form
Color
Packaging
Shipping Option
ASDL-5770-Dꢁꢁ
ASDL-5770-D3ꢀ
Straight
Dark Blue
Tape & Reel
Bulk
4000pcs
8000pcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protuded resin under flange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Specifications are subject to change without notice.
ꢁ
Absolute Maximum Ratings at T =25°C
A
Parameter
Symbol
Min.
Max
ꢀ50
30
Unit
mW
V
Power Dissipation
P
DISS
Reverse Voltage (Ir=ꢀ00uA)
Operating Temperature
Storage Temperature
Junction temperature
V
R
T
O
-40
-55
85
°C
T
S
ꢀ00
ꢀꢀ0
°C
T
J
°C
Lead Soldering Temperature
[ .6mm (0.063”) From Body ]
ꢁ60°C for 5 seconds
Electrical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Condition
Forward Voltage
V
F
ꢀ
ꢀ.3
If = 50mA
Breakdown Voltage
V
BR
30
V
Ir= ꢀ00uA
Ee = 0mW/cm
ꢁ
Reverse Dark Current
Diode Capacitance
ID
30
nA
pF
V =ꢀ0V
Ee =0mW/cm
R
ꢁ
CO
-
-
ꢁ5
Vr = 3V
F = ꢀMHZ
Ee = 0mW/cm
ꢁ
Open Circuit Voltage
V
OC
350
375
mV
λ = 940nm
Ee=0.5mW/cm
ꢁ
Thermal Resistance,
Junction to Pin
Rq
°C/W
JP
Optical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
ꢁ
Photocurrent
I
PH
ꢀ.7
ꢁ
uA
Ee = 0.ꢀmW/cm
λ = 940nm
Vr = 5V
ꢁ
Radiant Sensitive Area
A
S
ꢀ.55
0.6
mm
Absolute Spectral Sensitivity
A/W
λ = 940nm
Vr = 5V
Viewing Angle
ꢁθ
ꢀ40
900
900
50
Deg
nm
nm
ns
ꢀ/ꢁ
Wavelength of Peak sensitivity
Spectral BandWidth
Rise Time
λ
PK
Δλ
700
ꢀꢀ00
t
r
V = ꢀ0V
R
λ = 850nm
R = ꢀK Ω
L
Fall Time
t
f
50
ns
V = ꢀ0V
R
λ = 850nm
R = ꢀK Ω
L
3
Typical Electrical/Optical Characteristics Curves (T =25˚C unless otherwise indicated)
A
pA
pF
4000
3000
2000
1000
0
100
80
60
40
20
0
-2
-1
100
101
102
V
0
5
10
15
20 V
10
10
Reverse Voltage VR
Reverse Voltage VR
Figure 1. DARK CURRENT VS. REVERSE VOLTAGE
TA=25°C, Ee=0 mW/cm2
Figure 2. CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ; Ee=0mW/cm2
nA
103
1.4
1.2
1.0
0.8
0.6
0.4
0.2
102
1
10
100
-1
0
10
100 o C
-20
0
20
40
60
80 o C
0
20
40
60
80
Ambient Temperature
Ambient Temperature
Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE
Figure 4. DARK CURRENT VS. AMBIENT TEMPERATURE
VR=10, Ee=0mW/cm2
4
Typical Electrical/Optical Characteristics Curves (T =25˚C unless otherwise indicated) Cont.
A
%
uA
103
102
101
100
10-1
100
80
60
40
20
0
-2
-1
0
1
mW
CM2
700 800
1000
1100
900
10
10
10
10
Wavelength
Irradiance Ee
Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH
Figure 6. PHOTOCURRENT VS IRRADIANCE λ = 940 nm
0o
10o
20o
175
125
75
30o
1.0
0.9
0.8
40o
50o
60o
0.7
0.6
80o
25
0
100o
0.5 0.3
0
0.2 0.4
-40 -20
0
20 40 60 80 100 o C
Ambient Temperature
Figure 7. SENSITIVITY DIAGRAM
Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © ꢁ007 Avago Technologies Limited. All rights reserved.
AV0ꢁ-00ꢁꢀEN - January ꢁꢁ, ꢁ007
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