SPS42 [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | SPS42 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总3页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPS42
Semiconductor
NPN Silicon Transistor
Descriptions
• High voltage application
• Telephone application
Features
• Collector-Emitter voltage
VCEO=300V
• Complementary pair with SPS92
Ordering Information
Type NO.
Marking
Package Code
TO-92
SPS42
SPS42
Outline Dimensions
unit : mm
3.45±0.1
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
1 2 3
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9048-000
1
SPS42
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
(Ta=25°C)
Unit
V
Symbol
VCBO
VCEO
VEBO
IC
Ratings
300
300
V
6
V
500
mA
mA
mW
°C
Emitter Current
IE
-500
625
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=100µA, IE=0
300
300
6
-
-
-
-
-
-
-
-
-
V
IC=1mA, IB=0
-
V
IE=100µA, IC=0
-
V
VCB=200V, IE=0
-
0.1
0.1
-
µA
µA
-
Emitter cut-off current
IEBO
VEB=6V, IC=0
-
*
DC current gain
VCE=10V, IC=30mA
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=20V, IC=10mA
VCB=20V, IE=0, f=1MHz
40
-
hFE
*
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
0.5
0.9
-
V
VCE(sat)
*
-
V
VBE(sat)
fT
50
-
-
MHz
pF
Collector output capacitance
Cob
-
3
* ： Pulse Tester： Pulse Width ≤ 300 ㎲, Duty Cycle≤ 2.0%
KST-9048-000
2
SPS42
Electrical Characteristic Curves
Fig. 1 hFE - IC
Fig. 2 VCE(sat),VBE(sat) - IC
Fig. 3 fT - IC
Fig. 4 COb - VR
KST-9048-000
3
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