SPS425 [HUTSON]
Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element;
| 型号： | SPS425 |
| 厂家： | 
HUTSON INDUSTRIES, INC. |
| 描述： | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element 光纤 |
| 文件： | 总4页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAXIMUM RATINGS
SYMBOL VDRM
DEVICE NUMBERS UNITS
50
*S020
*S120
*S220
*S420
*S620
*S025
*S125
*S225
*S425
*S625
*S040
*S140
*S240
*S440
*S640
100
VDRM &
200
REPETITIVE PEAK OFF-STATE VOLTAGE AND
REPETITIVE PEAK REVERSE VOLTAGE GATE OPEN,
AND TJ = 110° C
VOLT
AMP
VRRM
400
600
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION ANGLE OF 360º
IT(RMS)
20
25
40
PEAK SURGE (NON-REPETITIVE)
ON-STATE CURRENT, ONE-CYCLE,
AT 50HZ OR 60HZ
ITSM
200
250
2
400
AMP
AMP
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE - POWER DISSIPATION AT IGT < IGTM
IGTM
PGM
2
2
20
0.5
20
0.5
-40 to +150
-40 to +110
20
0.5
WATT
WATT
°C
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE, TJ
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PG(AV)
TSTG
TOPER
°C
PEAK OFF - STATE CURRENT GATE OPEN,
TC = 110° C VDRM & VRRM = MAX. RATING
IDRM &
IRRM
MA
MAX.
1.0
1.0
1.0
MAXIMUM ON - STATE VOLTAGE, (PEAK)
AT TC = 25° C AND IT = RATED AMPS
DC HOLDING CURRENT, GATE
OPEN AND TC = 25° C
VOLT
MAX.
MA
VTM
IHO
1.9
50
1.5
50
1.6
50
MAX.
CRITICAL RATE-OF-RISE OF OFF-
STATE VOLTAGE, GATE OPEN, TC = 110° C
CRITICAL
dv/dt
200
200
200
V/µSEC.
DC GATE-TRIGGER CURRENT FOR ANODE
VOLTAGE = 12VDC, RL = 60 W AND AT TC = 25° C
MA
MAX.
IGT
25
25
25
DC GATE - TRIGGER VOLTAGE FOR ANODE
VOLTAGE = 12VDC, RL = 60 W AND AT TC = 25° C
VOLT
MAX.
VGT
T gt
2.0
2.5
2.0
2.5
2.0
2.5
GATE-CONTROLLED TURN-ON TIME FOR
TD + TR, IGT = 150 MA AND TC = 25° C
µSEC.
THERMAL RESISTANCE, JUNCTION-TO-CASE
PRESSFIT
STUD MOUNT
1.3
1.8
2.0
1.3
1.8
2.0
0.9
1.4
1.6
°C/WATT
TYP
RqJ-C
ISOLATED - STUD MOUNT
P
PRESS FIT
WARNING
SP
PRESS FIT WITH STUD MOUNT
Isolated stud products should be handled with care. The ceramic used
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.
DO NOT crush, grind or abrade these portions of the thyristors because
the dust resulting from such action may be HARZARDOUS if INHALED.
SIP
PRESS FIT WITH ISOLATED STUD MOUNT
*Add prefix for package style desired.
SOLID STATE CONTROL DEVICES
44
SOLID STATE CONTROL DEVICES
45
SOLID STATE CONTROL DEVICES
46
SOLID STATE CONTROL DEVICES
47
相关型号：
SPS440
Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element
HUTSON
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