SBT3904_1 [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | SBT3904_1 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBT3904
Semiconductor
NPN Silicon Transistor
Descriptions
• General small signal application
• Switching application
Features
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with SBT3906
Ordering Information
Type NO.
Marking
Package Code
SBT3904
1A
SOT-23
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
1
3
2
0.45~0.60
0.2 Min.
PIN Connections
1. Base
2. Emitter
3. Collector
KST-2022-000
1
SBT3904
Absolute maximum ratings
Characteristic
Ta=25°C
Symbol
VCBO
VCEO
VEBO
IC
Ratings
60
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
40
V
6
V
200
mA
mW
°C
*
Collector dissipation
PC
350
Junction temperature
Storage temperature range
Tj
150
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Ta=25°C
Characteristic
Symbol
BVCBO
BVCEO
BVEBO
ICEX
Test Condition
Min. Typ. Max. Unit
IC=10µA, IE=0
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
60
40
6
-
-
-
-
-
-
-
-
V
V
IC=1mA, IB=0
IE=10µA, IC=0
-
V
VCE=30V, VEB=3V
VCE=1V, IC=10mA
IC=50mA, IB=5mA
-
50
300
0.3
nA
-
DC current gain
hFE
100
-
Collector-Emitter saturation voltage
VCE(sat)
V
VCE=20V, IC=10mA,
f=100MHz
Transition frequency
fT
300
-
-
MHz
Collector output capacitance
Delay time
Cob
td
tr
VCB=5V, IE=0, f=1MHz
-
-
-
-
-
-
-
-
-
-
4
35
pF
ns
ns
ns
ns
VCC=3Vdc, VBE(off)=0.5Vdc.
IC=10mAdc, IB1=1mAdc
Rise time
35
Storage time
Fall Time
ts
200
50
VCC=3Vdc,IC=10mAdc,
IB1=IB2=1mAdc
tf
KST-2022-000
2
SBT3904
Electrical Characteristic Curves
Fig. 1 PC-Ta
Fig. 2 hFE-IC
Fig. 3 VCE(sat)-IC
KST-2022-000
3
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