SBT3906 [AUK]
PNP Silicon Transistor; PNP硅晶体管型号: | SBT3906 |
厂家: | AUK CORP |
描述: | PNP Silicon Transistor |
文件: | 总3页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBT3906
Semiconductor
PNP Silicon Transistor
Descriptions
• General small signal application
• Switching application
Features
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with SBT3904
Ordering Information
Type NO.
Marking
Package Code
SBT3906
2A
SOT-23
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
1
3
2
0.45~0.60
0.2 Min.
PIN Connections
1. Emitter
2. Base
3. Collector
KST-2023-000
1
SBT3906
Absolute maximum ratings
Characteristic
Ta=25°C
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-40
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
-40
V
-5
V
-200
350
mA
mW
°C
*
Collector dissipation
PC
Junction temperature
Storage temperature range
Tj
150
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Ta=25°C
Characteristic
Symbol
BVCBO
BVCEO
BVEBO
ICEX
Test Condition
Min. Typ. Max. Unit
IC=-10µA, IE=0
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
-40
-40
-5
-
-
-
-
-
-
-
-
V
V
IC=-1mA, IB=0
IE=-10µA, IC=0
-
V
VCE=-30V, VEB=-3V
VCE=-1V, IC=-10mA
IC=-50mA, IB=-5mA
-
-50
300
-0.4
nA
-
DC current gain
hFE
100
-
Collector-Emitter saturation voltage
VCE(sat)
V
VCE=-20V, IC=-10mA,
f=100MHz
Transition frequency
fT
250
-
-
MHz
Collector output capacitance
Delay time
Cob
td
tr
VCB=-5V, IE=0, f=1MHz
-
-
-
-
-
-
-
-
-
-
4.5
35
pF
ns
ns
ns
ns
VCC=-3Vdc, VBE(off)=-0.5Vdc,
IC=-10mAdc, IB1=-1mAdc
Rise time
35
Storage time
Fall Time
ts
225
75
VCC=-3Vdc,IC=-10mAdc,
IB1=IB2=-1mAdc
tf
KST-2023-000
2
SBT3906
Electrical Characteristic Curves
Fig. 2 hFE-IC
Fig. 1 PC-Ta
Fig. 3 VCE(sat)-IC
KST-2023-000
3
相关型号:
©2020 ICPDF网 联系我们和版权申明