ATA6663_14 [ATMEL]
LIN Transceiver;
| 型号： | ATA6663_14 |
| 厂家： | 
ATMEL |
| 描述： | LIN Transceiver |
| 文件： | 总19页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATA6663/ATA6664
LIN Transceiver
DATASHEET
Features
● Operating range from 5V to 27V
● Baud rate up to 20Kbaud
● Improved slew rate control according to LIN specification 2.0, 2.1 and SAEJ2602-2
● Fully compatible with 3.3V and 5V devices
● Atmel® ATA6663: TXD Time-out Timer, Atmel ATA6664: No TXD Time-out Timer
● Normal and Sleep Mode
● Wake-up capability via LIN bus (90µs dominant)
● External wake-up via WAKE Pin (35µs low level)
● INH output to control an external voltage regulator or to switch the master pull-up
● Very low standby current during Sleep Mode (10µA)
● Wake-up source recognition
● Bus pin short-circuit protected versus GND and battery
● LIN input current < 2µA if VBAT is disconnected
● Overtemperature protection
● High EMC level
● Interference and damage protection according to ISO/CD 7637
● Fulfills the OEM “Hardware Requirements for LIN in Automotive Applications
Rev.1.1”
● Packages: SO8, DFN8
Description
The Atmel ATA6663 is a fully integrated LIN transceiver complying with the LIN
specification 2.0, 2.1 and SAEJ2602-2. The Atmel ATA6664 is an identical version, the
only difference is that the TXD-dominant Time-out function is disabled so the device is able
to send a static low signal to the LIN bus. It interfaces the LIN protocol handler and the
physical layer. The device is designed to handle the low-speed data communication in
vehicles, for example, in convenience electronics. Improved slope control at the LIN driver
ensures secure data communication up to 20Kbaud. Sleep Mode guarantees minimal cur-
rent consumption even in the case of a floating bus line or a short circuit on the LIN bus to
GND. The ATA6663/ATA6664 feature advanced EMI and ESD performance.
9146I-AUTO-10/14
Figure 1.
Block Diagram
7
VS
RXD
Receiver
-
1
+
6
LIN
Filter
Wake up bus timer
Short circuit and
overtemperature
protection
TXD
4
TXD
Slew rate control
Time-Out
timer
(only ATA6663)
VS
VS
Control unit
5
GND
WAKE
3
Wake-up
timer
Standby mode
2
8
EN
INH
1.
Pin Configuration
Figure 1-1. Pinning SO8, DFN8
RXD
EN
WAKE
TXD
1
2
3
4
8
7
6
5
INH
VS
LIN
GND
RXD
EN
WAKE
TXD
INH
VS
LIN
GND
DFN8
3 x 3
SO8
Table 1-1. Pin Description
Pin
1
Symbol
RXD
EN
Function
Receive data output (open drain)
2
Enables normal mode; when the input is open or low, the device is in sleep mode
High voltage input for local wake-up request. If not needed, connect directly to VS
Transmit data input; active low output (strong pull-down) after a local wake-up request
Ground, heat sink
3
WAKE
TXD
GND
LIN
4
5
6
LIN bus line input/output
7
VS
Battery supply
Battery-related inhibit output for controlling an external voltage regulator or to switch-off the LIN
master pull-up resistor; active high after a wake-up request
8
INH
2
ATA6663/ATA6664 [DATASHEET]
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2.
Functional Description
2.1
Physical Layer Compatibility
Since the LIN physical layer is independent from higher LIN layers (e.g., the LIN protocol layer), all nodes with a LIN physical
layer according to LIN2.x can be used along with LIN physical layer nodes, which are according to older versions (i.e.,
LIN1.0, LIN1.1, LIN1.2, LIN1.3), without any restrictions.
2.2
Supply Pin (VS)
Undervoltage detection is implemented to disable transmission if VS falls to a value below 5V in order to avoid false bus
messages. After switching on VS, the IC switches to fail-safe mode and INHIBIT is switched on. The supply current in sleep
mode is typically 10µA.
2.3
2.4
Ground Pin (GND)
The Atmel ATA6663/ATA6664 does not affect the LIN Bus in the case of a GND disconnection. It is able to handle a ground
shift up to 11.5% of VS.
Bus Pin (LIN)
A low-side driver with internal current limitation and thermal shutdown, and an internal pull-up resistor are implemented as
specified by LIN2.x. The voltage range is from –27V to +40V. This pin exhibits no reverse current from the LIN bus to VS,
even in the case of a GND shift or VBatt disconnection. The LIN receiver thresholds are compatible to the LIN protocol
specification.The fall time (from recessive to dominant) and the rise time (from dominant to recessive) are slope controlled.
The output has a self-adapting short-circuit limitation: During current limitation, as the chip temperature increases, the
current is reduced.
Note:
The internal pull-up resistor is only active in normal and fail-safe mode.
2.5
2.6
Input/Output Pin (TXD)
In Normal Mode the TXD pin is the microcontroller interface to control the state of the LIN output. TXD must be at Low- level
in order to have a low LIN Bus. If TXD is high, the LIN output transistor is turned off and the Bus is in recessive state. The
TXD pin is compatible to both a 3.3V or 5V supply. During fail-safe Mode, this pin is used as output and is signalling the
wake- up source (see Section 2.14 “Wake-up Source Recognition” on page 8). It is current limited to < 8mA.
TXD Dominant Time-out Function (only Atmel ATA6663)
The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from being driven permanently in
dominant state. If TXD is forced to low longer than tDOM > 40ms, the pin LIN will be switched off (recessive mode). To reset
this mode, TXD needs to be switched to high (> 10µs) before switching LIN to dominant again.
Note:
The ATA6664 does not provide this functionality.
2.7
2.8
Output Pin (RXD)
This pin forwards information on the state of the LIN bus to the microcontroller. LIN high (recessive) is indicated by a high
level at RXD, LIN low (dominant) is reported by a low voltage at RXD. The output is an open drain, therefore, it is compatible
to a 3.3V or 5V power supply. The AC characteristics are defined by a pull-up resistor of 5kΩ to 5V and a load capacitor of
20pF. The output is short-current protected. In unpowered mode (VS = 0V), RXD is switched off. For ESD protection a Zener
diode with VZ = 6.1V is integrated.
Enable Input Pin (EN)
This pin controls the operation mode of the device. If EN = 1, the device is in normal mode, with the transmission path from
TXD to LIN and from LIN to RXD both active. At a falling edge on EN, while TXD is already set to high, the device switches
to sleep mode and transmission is not possible. In sleep mode, the LIN bus pin is connected to VS with a weak pull-up
current source. The device can transmit only after being woken up (see Section 2.9, “Inhibit Output Pin (INH)” ).
During sleep mode the device is still supplied from the battery voltage. The supply current is typically 10µA. The pin EN
provides a pull-down resistor in order to force the transceiver into sleep mode in case the pin is disconnected.
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2.9
Inhibit Output Pin (INH)
This pin is used to control an external voltage regulator or to switch on/off the LIN Master pull-up resistor in case the device
is used in a Master node. The inhibit pin provides an internal switch towards pin VS which is protected by temperature
monitoring. If the device is in normal or fail-safe mode, the inhibit high-side switch is turned on. When the device is in sleep
mode, the inhibit switch is turned off, thus disabling the voltage regulator or other connected external devices.
A wake-up event on the LIN bus or at pin WAKE will switch the INH pin to the VS level. After a system power-up (VS rises
from zero), the pin INH switches automatically to the VS level.
2.10 Wake-up Input Pin (WAKE)
This pin is a high-voltage input used to wake-up the device from sleep mode. It is usually connected to an external switch in
the application to generate a local wake-up. A pull-up current source with typically –10µA is implemented. The voltage
threshold for a wake-up signal is 3V below the VS voltage with an output current of typically –3µA.
If a local wake-up is not needed in the application, pin WAKE can directly be connected to pin VS.
2.11 Operation Modes
1. Normal Mode
This is the normal transmitting and receiving mode. All features are available.
2. Sleep Mode
In this mode the transmission path is disabled and the device is in low-power mode. Supply current from VBatt is
typically 10µA. A wake-up signal from the LIN bus or via pin WAKE will be detected and will switch the device to
fail-safe mode. If EN then switches to high, normal mode is activated. Input debounce timers at pin WAKE (tWAKE),
LIN (tBUS) and EN (tsleep,tnom) prevent unwanted wake-up events due to automotive transients or EMI. In sleep
mode the INH pin remains floating.
The internal termination between pin LIN and pin VS is disabled. Only a weak pull-up current (typical 10 µA)
between pin LIN and pin VS is present. Sleep mode can be activated independently from the actual level on pin
LIN or WAKE.
3. Fail-safe Mode
At system power-up or after a wake-up event, the device automatically switches to fail-safe mode. It switches the
INH pin to a high state, to the VS level when VS exceeds 5V. LIN communication is switched off. The microcon-
troller of the application will then confirm normal mode by setting the EN pin to high.
Figure 2-1. Modes of Operation
Power-up
a: Power-up (V > 3V)
a
S
b: V < 5V
S
c: Bus wake-up event
d: Wake-up from wake switch
(only Transceiver 2)
Fail-Safe Mode
Communication: OFF
RXD: see table of Modes
INH: high (INH HS switch ON) if VS > 5V
b
b
EN = 1
& NOT b
c or d
Go to sleep command
EN = 0
Normal Mode
INH: high (INH HS switch ON)
Communication: ON
Sleep Mode
INH: high impedance (INH HS switch OFF)
Communication: OFF
Local wake-up event
EN = 1
4
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Table 2-1. Table of Operation Modes
Mode of Operation
Transceiver
INH
RXD
LIN
On, except
VS < 5V
High, except after
wake-up
Fail-safe
Off
Recessive
Normal
Sleep
On
Off
On
Off
LIN depending
High ohmic
TXD depending
Recessive
Wake-up events from sleep mode:
●
●
●
●
LIN bus
EN pin
WAKE pin
VS undervoltage
Figure 2-1 on page 4, Figure 2-2 on page 5 and Figure 2-5 on page 8 show the details of wake-up operations.
2.12 Remote Wake-up via Dominant Bus State
A voltage lower than the LIN pre-wake detection VLINL at pin LIN activates the internal LIN receiver and starts the wake-up
detection timer.
A falling edge at pin LIN, followed by a dominant bus level VBUSdom maintained for a certain time period (> tBUS) and a rising
edge at pin LIN results in a remote wake-up request. The device switches to fail-safe mode. Pin INH is activated (switches to
VS) and the internal termination resistor is switched on. The remote wake-up request is indicated by a low level at pin RXD to
interrupt the microcontroller (see Figure 2-2).
Figure 2-2. LIN Wake-up Waveform Diagram
Bus wake-up filtering time
(tBUS
)
LIN bus
High
Low
INH
Low or floating
High or floating
RXD
External
voltage
regulator
Off state
Normal
Mode
Regulator wake-up time delay
EN High
EN
Node in sleep state
Microcontroller start-up
delay time
ATA6663/ATA6664 [DATASHEET]
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9146I–AUTO–10/14
In sleep mode the device has a very low current consumption, even during short-circuits or floating conditions on the bus. A
floating bus can arise if the Master pull-up resistor is missing, e.g., in case it is switched off when the LIN Master is in sleep
mode or if the power supply of the Master node is switched off.
To minimize the current consumption IVS during voltage levels at the LIN-pin below the LIN pre-wake threshold, the receiver
is activated only for a specific time tmon. If tmon elapses while the voltage at the bus is lower than pre-wake detection low
(VLINL) and higher than the LIN dominant level, the receiver is switched off again and the circuit reverts to sleep mode. The
current consumption is then the result of IVSsleep plus ILINwake. If a dominant state is reached on the bus no wake-up will occur.
Even if the voltage exceeds the pre-wake detection high (VLINH), the IC will remain in sleep mode (see Figure 2-3 on page 6).
This means the LIN bus must be above the Pre-wake detection threshold VLINH for a few microseconds before a new LIN
wake-up is possible.
Figure 2-3. Floating LIN Bus During Sleep Mode
LIN Pre-wake
VLINL
LIN BUS
LIN dominant state
VBUSdom
tmon
IVSsleep
+ ILINwake
IVSfail
I
VS
IVSsleep
IVSsleep
Mode of
Sleep Mode
Wake-up Detection Phase
off (disabled)
Sleep Mode
operation
Int. Pull-up
Resistor
RLIN
6
ATA6663/ATA6664 [DATASHEET]
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If the Atmel® ATA6663/ATA6664 is in sleep mode and the voltage level at the LIN is in dominant state (VLIN < VBUSdom) for a
time period exceeding tmon (during a short circuit at LIN, for example), the IC switches back to sleep mode. The VS current
consumption then consists of IVSsleep plus ILINWAKE. After a positive edge at pin LIN the IC switches directly to fail-safe mode
(see Figure 2-4).
Figure 2-4. Short Circuit to GND on the LIN Bus During Sleep Mode
LIN Pre-wake
V
V
LINL
LIN BUS
LIN dominant state
BUSdom
t
mon
t
mon
I
I
VSfail
VSsleep
I
+ I
VS
LINwake
I
VSsleep
Mode of
Sleep Mode
Wake-up Detection Phase Sleep Mode
off (disabled)
Fail-safe Mode
on (enabled)
operation
Int. Pull-up
Resistor
RLIN
2.13 Local Wake-up via Pin WAKE
A falling edge at pin WAKE, followed by a low level maintained for a certain time period (> tWAKE), results in a local wake-up
request. According to ISO7637, the wake-up time ensures that no transient creates a wake-up. The device then switches to
fail-safe mode. Pin INH is activated (switches to VS) and the internal termination resistor is switched on. The local wake-up
request is indicated both by a low level at pin RXD to interrupt the microcontroller and by a strong pull-down at pin TXD (see
Figure 2-5). The voltage threshold for a wake-up signal is 3V below the VS voltage with an output current of typically –3µA.
Even in case of a continuous low at pin WAKE it is possible to switch the IC into sleep mode via a low level at pin EN. The IC
will remain in sleep mode for an unlimited time. To generate a new wake-up at pin WAKE, a high signal > 6µs is required. A
negative edge then starts the wake-up filtering time again.
ATA6663/ATA6664 [DATASHEET]
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Figure 2-5. Wake-up from Wake-up Switch
Wake pin
INH
State change
High
Low
Low or floating
High or floating
RXD
TXD
High
Weak
pull-down
TXD weak pull-down resistor
TXD strong pull-down
On state
Wake filtering time
tWAKE
Voltage
regulator
Off state
Node in
operation
Regulator wake-up time delay
EN High
EN
Node in sleep state
Microcontroller start-up
delay time
2.14 Wake-up Source Recognition
The device can distinguish between a local wake-up request (pin WAKE) and a remote wake-up request (LIN bus). The
wake-up source can be read at pin TXD in fail-safe mode. If an external pull-up resistor (typically 5kΩ) has been added on
pin TXD to the power supply of the microcontroller, a high level indicates a remote wake-up request (weak pull-down at pin
TXD), a low level indicates a local wake-up request (strong pull-down at pin TXD). The wake-up request flag (indicated at pin
RXD) as well as the wake-up source flag (indicated at pin TXD) are reset immediately if the microcontroller sets pin EN to
high (see Figure 2-2 on page 5 and Figure 2-5 on page 8).
2.15 Fail-safe Features
●
During a short-circuit at LIN to VBAT, the output limits the output current to IBUS_LIM. Due to the power dissipation, the
chip temperature exceeds Toff, and the LIN output is switched off. The chip cools down, and after a hysteresis of Thys
,
it switches the output on again.
●
●
●
During a short-circuit from LIN to GND the IC can be switched to sleep mode, and even in this case the current
consumption is lower than 45µA. When the short-circuit has elapsed, the IC starts with a remote wake-up.
If the Atmel® ATA6663/ATA6664 is in sleep mode and a floating condition occurs on the bus, the IC switches back to
sleep mode automatically. The current consumption is lower than 45µA in this case.
The reverse current is < 2µA at pin LIN during loss of VBAT. This is the best behavior for bus systems where some
slave nodes are supplied from battery or ignition.
●
●
●
●
Pin EN provides a pull-down resistor to force the transceiver into sleep mode if EN is disconnected
Pin RXD is set floating if VBAT is disconnected
Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected
After switching the IC into Normal Mode the TXD pin must be pulled to high longer than 10µs in order to activate the
LIN driver. This feature prevents the bus from being driven into dominant state when the IC is switched into Normal
Mode and TXD is low.
●
The INH output transistor is protected by temperature monitoring
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ATA6663/ATA6664 [DATASHEET]
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3.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Min.
Typ.
Max.
Unit
VS
–0.3
+40
V
- Continuous supply voltage
Wake DC and transient voltage (with 2.7kΩ serial resistor)
- Transient voltage according to ISO7637 (coupling 1nF)
–3
–150
+40
+100
V
V
Logic pins (RXD, TXD, EN)
–0.3
+5.5
V
LIN
- DC voltage
–27
–150
+40
+100
V
V
- Transient voltage according to ISO7637 (coupling 1nF)
INH
- DC voltage
–0.3
VS + 0.3
V
ESD according to IBEE LIN EMC
Test specification 1.0 according to IEC 61000-4-2
- Pin VS, LIN to GND
±8
±6
KV
KV
- Pin WAKE (2.7kΩ serial resistor)
ESD HBM according to STM5.1
with 1.5kΩ / 100pF
- Pin VS, LIN, WAKE, INH to GND
±6
±3
KV
KV
HBM ESD
ANSI/ESD-STM5.1
JESD22-A114
AEC-Q100 (002)
CDM ESD STM 5.3.1
±750
±200
–40
V
V
Machine Model ESD AEC-Q100-Rev.F (003)
Junction temperature
Tj
+150
+150
°C
°C
Storage temperature
Tstg
–55
4.
Thermal Characteristics SO8
Parameters
Symbol
Min.
Typ.
Max.
Unit
Thermal resistance junction ambient
RthJA
145
K/W
Special heat sink at GND (pin 5) on PCB (fused lead
frame to pin 5)
RthJA
80
K/W
Thermal shutdown
Toff
150
5
165
10
180
20
°C
°C
Thermal shutdown hysteresis
Thys
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5.
Thermal Characteristics DFN8
Parameters
Symbol
Min.
Typ.
Max.
Unit
Thermal resistance junction to heat slug
RthJC
10
K/W
Thermal resistance junction to ambient, where heat slug is
soldered to PCB according to JEDEC
RthJA
50
K/W
Thermal shutdown
Toff
150
5
165
10
180
20
°C
°C
Thermal shutdown hysteresis
Thys
6.
Electrical Characteristics
5V < VS < 27V, Tj = –40°C to +150°C
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max. Unit Type*
1
VS Pin
1.1 DC voltage range nominal
7
7
VS
5
13.5
10
27
20
V
A
A
Sleep mode
VLIN > VS – 0.5V
VS < 14V
IVSsleep
µA
1.2 Supply current in sleep mode
Sleep mode,
bus shorted to GND
VLIN = 0V
7
IVSsleep_sc
23
45
µA
A
VS < 14V
Bus recessive
VS < 14V
1.3
7
7
7
IVSrec
IVSdom
IVSfail
0.9
1.2
1.3
2
mA
mA
mA
A
A
A
Supply current in normal mode
1.4
Bus dominant
VS < 14V
Total bus load > 500Ω
Bus recessive
VS < 14V
1.5 Supply current in fail-safe mode
0.5
1.1
1.6 VS undervoltage threshold on
1.7 VS undervoltage threshold off
7
7
VSth
VSth
4
4.95
5
V
V
A
A
4.05
VS undervoltage threshold
hysteresis
1.8
7
VSth_hys
50
500
mV
A
2
RXD Output Pin (Open Drain)
Normal mode
VLIN = 0V, VRXD = 0.4V
2.1 Low-level output sink current
2.2 RXD saturation voltage
2.3 High-level leakage current
2.4 ESD Zener diode
1
1
1
1
IRXDL
VsatRXD
IRXDH
1.3
2.5
8
mA
V
A
A
A
A
5-kΩ pull-up resistor to 5V
0.4
+3
8.6
Normal mode
VLIN = VBAT, VRXD = 5V
–3
µA
V
IRXD = 100µA
VZRXD
5.8
3
TXD Input Pin
3.1 Low-level voltage input
3.2 High-level voltage input
3.3 Pull-down resistor
4
4
4
4
VTXDL
VTXDH
RTXD
–0.3
2
+0.8
5.5
V
V
A
A
A
A
VTXD = 5V
VTXD = 0V
125
–3
250
600
+3
kΩ
µA
3.4 Low-level leakage current
ITXD_leak
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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6.
Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max. Unit Type*
Fail-safe mode, local wake-up
VTXD = 0.4V
3.5 Low-level output sink current
4
ITXD
1.3
2.5
8
mA
A
VLIN = VBAT
4
EN Input Pin
4.1 Low-level voltage input
4.2 High-level voltage input
4.3 Pull-down resistor
2
2
2
2
VENL
VENH
REN
IEN
–0.3
2
+0.8
5.5
V
V
A
A
A
A
VEN = 5V
VEN = 0V
125
–3
250
600
+3
kΩ
µA
4.4 Low-level input current
5
INH Output Pin
Normal or fail-safe mode
VS –
0.75
5.1 High-level voltage
8
8
8
VINHH
RINH
IINHL
VS
50
+3
V
Ω
A
A
A
IINH = –15mA
Switch-on resistance between
VS and INH
5.2
Normal or fail-safe mode
30
Sleep mode
VINH = 0V/27V, VS = 27V
5.3 Leakage current
WAKE Pin
–3
µA
6
VS –
1V
VS +
0.3V
6.1 High-level input voltage
6.2 Low-level input voltage
3
3
VWAKEH
VWAKEL
V
V
A
A
VS –
3.3V
IWAKE = typically –3µA
–1V
6.3 Wake pull-up current
VS < 27V
3
3
IWAKE
IWAKE
–30
–5
–10
µA
µA
A
A
6.4 High-level leakage current
VS = 27V, VWAKE = 27V
+5
7
LIN Bus Driver
0.9 ×
VS
7.1 Driver recessive output voltage RLOAD = 500Ω / 1kΩ
6
6
6
6
VBUSrec
V_LoSUP
VS
1.2
2
V
V
V
V
A
A
A
A
Driver dominant voltage
VBUSdom_DRV_LoSUP
7.2
7.3
7.4
7.5
VVS = 7V, Rload = 500Ω
VVS = 18V, Rload = 500Ω
VVS = 7V, Rload = 1000Ω
Driver dominant voltage
VBUSdom_DRV_HiSUP
V_HiSUP
Driver dominant voltage
VBUSdom_DRV_LoSUP
V_LoSUP_1k
0.6
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 1000Ω
6
6
6
V_HiSUP_1k_
RLIN
0.8
20
V
kΩ
V
A
A
D
7.6 Pull-up resistor to VS
The serial diode is mandatory
30
47
In pull-up path with Rslave
ISerDiode = 10mA
7.7 Voltage drop at the serial diodes
VSerDiode
0.4
1.0
LIN current limitation
7.8
6
6
IBUS_LIM
40
–1
120
200
mA
mA
A
A
VBUS = VBAT_max
Input leakage current at the
7.9 receiver, including pull-up
resistor as specified
Input leakage current
Driver off
VBUS = 0V, VS = 12V
IBUS_PAS_do
m
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA6663/ATA6664 [DATASHEET]
11
9146I–AUTO–10/14
6.
Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max. Unit Type*
Driver off
8V < VBAT < 18V
8V < VBUS < 18V
VBUS ≥ VBAT
7.10 Leakage current LIN recessive
Leakage current at ground loss;
6
IBUS_PAS_rec
10
20
µA
A
control unit disconnected from GNDDevice = VS
7.11 ground; loss of local ground VBAT =12V
6
IBUS_NO_Gnd
–10
+0.5
0.1
+10
µA
A
must not affect communication 0V < VBUS < 18V
in the residual network
Leakage current at loss of
battery; node has to substain
7.12 the current that can flow under
VBAT disconnected
SUP_Device = GND
V
6
6
IBUS_NO_Bat
2
µA
pF
A
D
this condition; bus must remain 0V < VBUS < 18V
operational under this condition
7.13 Capacitance on pin LIN to GND
CLIN
20
8
LIN Bus Receiver
VBUS_CNT
(Vth_dom + Vth_rec) / 2
=
0.475 × 0.5 × 0.525
8.1 Center of receiver threshold
8.2 Receiver dominant state
8.3 Receiver recessive state
8.4 Receiver input hysteresis
6
6
6
6
6
6
6
VBUS_CNT
VBUSdom
VBUSrec
VBUShys
VLINH
V
V
A
A
A
A
A
A
A
VS
VS
× VS
0.4 ×
VS
VEN = 5V
–27
0.6 ×
VS
VEN = 5V
40
V
0.028 × 0.1 × 0.175
VHYS = Vth_rec – Vth_dom
V
VS
VS
× VS
Pre-wake detection LIN
8.5
VS –
2V
VS +
0.3V
V
High-level input voltage
Pre-wake detection LIN
8.6
VS –
3.3V
Switches the LIN receiver on
VLINL
–27V
–30
V
Low-level input voltage
VS < 27V
VLIN = 0V
8.7 LIN Pre-wake pull-up current
ILINWAKE
–10
µA
9
Internal Timers
Dominant time for wake-up via
LIN bus
9.1
VLIN = 0V
6
3
tBUS
30
7
90
35
150
50
µs
µs
A
A
Time of low pulse for wake-up
via pin WAKE
9.2
VWAKE = 0V
tWAKE
Time delay for mode change
9.3 from fail-safe mode to normal
mode via pin EN
VEN = 5V
2
tnorm
2
7
15
µs
A
Time delay for mode change
9.4 from normal mode into sleep
mode via pin EN
VEN = 0V
VTXD = 0V
VVS = 5V
2
4
tsleep
tdom
tVS
7
15
60
24
85
µs
ms
µs
A
A
A
Atmel ATA6663:
9.5
40
TXD dominant time out time
Power-up delay between
9.6 VS = 5V until INH switches to
high
7, 8
200
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
12
ATA6663/ATA6664 [DATASHEET]
9146I–AUTO–10/14
6.
Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max. Unit Type*
Monitoring time for wake-up via
LIN bus
9.7
6
tmon
6
10
15
ms
A
LIN Bus Driver AC Parameter with Different Bus Loads
Load 1 (small): 1nF, 1kΩ ; Load 2 (large): 10nF, 500Ω ; RRXD = 5kΩ ; CRXD = 20pF;
Load 3 (medium): 6.8nF, 660Ω characterized on samples; 10.1 and 10.2 specifies the timing parameters for proper
10
operation at 20Kbit/s, 10.3 and 10.4 at 10.4Kbit/s.
THRec(max) = 0.744 × VS
THDom(max) = 0.581 × VS
10.1 Duty cycle 1
10.2 Duty cycle 2
10.3 Duty cycle 3
10.4 Duty cycle 4
VS = 7.0V to 18V
Bit = 50µs
D1 = tbus_rec(min) / (2 × tBit)
6
6
6
6
D1
D2
D3
D4
0.396
A
A
A
A
t
THRec(min) = 0.422 × VS
THDom(min) = 0.284 × VS
VS = 7.0V to 18V
tBit = 50µs
D2 = tbus_rec(max) / (2 × tBit)
0.581
THRec(max) = 0.778 × VS
THDom(max) = 0.616 × VS
VS = 7.0V to 18V
tBit = 96µs
D3 = tbus_rec(min) / (2 × tBit)
0.417
THRec(min) = 0.389 × VS
THDom(min) = 0.251 × VS
VS = 7.0V to 18V
0.590
tBit = 96µs
D4 = tbus_rec(max) / (2 × tBit)
Receiver Electrical AC Parameters of the LIN Physical Layer
LIN receiver, RXD load conditions: CRXD = 20pF, Rpull-up = 5kΩ
11
Propagation delay of receiver
(see Figure 6-1 on page 14)
trec_pd = max(trx_pdr , trx_pdf
VS = 7.0V to 18V
)
11.1
1
1
trx_pd
6
µs
µs
A
A
Symmetry of receiver
11.2 propagation delay rising edge
minus falling edge
trx_sym = trx_pdr – trx_pdf
VS = 7.0V to 18V
trx_sym
–2
+2
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA6663/ATA6664 [DATASHEET]
13
9146I–AUTO–10/14
Figure 6-1. Definition of Bus Timing Parameter
tBit
tBit
tBit
TXD
(Input to transmitting node)
tBus_dom(max)
tBus_rec(min)
Thresholds of
receiving node 1
THRec(max)
VS
THDom(max)
(Transceiver supply
of transmitting node)
LIN Bus Signal
Thresholds of
receiving node 2
THRec(min)
THDom(min)
tBus_dom(min)
tBus_rec(max)
RXD
(Output of receiving node 1)
trx_pdf(1)
trx_pdr(1)
RXD
(Output of receiving node 2)
trx_pdr(2)
trx_pdf(2)
14
ATA6663/ATA6664 [DATASHEET]
9146I–AUTO–10/14
Figure 6-2. Application Circuit
Master node
pull-up
VBATTERY
100nF
22μF
12V
1k
5V
7
6
ATA6663/ATA6664
VDD
VS
Receiver
1
RXD
Filter
Microcontroller
LIN
Wake-up bus timer
Slew rate control
Short-circuit and
overtemperature
protection
4
3
TXD
Time-out
timer
TXD
220pF
GND IO
V
S
V
S
Control unit
Sleep mode
10kΩ
5
2.7kΩ
Wake-up
timer
GND
External
switch
WAKE
2
8
EN
INH
ATA6663/ATA6664 [DATASHEET]
15
9146I–AUTO–10/14
7.
Ordering Information
Extended Type Number
ATA6663-FAQW-1
ATA6663-GAQW
Package
DFN8
SO8
Remarks
LIN transceiver, Pb-free, 6k, taped and reeled
LIN transceiver, Pb-free, 4k, taped and reeled
LIN transceiver, Pb-free, 4k, taped and reeled
ATA6664-GAQW
SO8
8.
Package Information
Figure 8-1. SO8
D
E1
L
b
e
E
8
1
5
4
technical drawings
according to DIN
specifications
Dimensions in mm
COMMON DIMENSIONS
(Unit of Measure = mm)
Pin 1 identity
Symbol MIN
NOM
1.65
0.15
1.47
4.9
MAX NOTE
A
A1
A2
D
1.5
0.1
1.4
4.8
5.8
3.8
0.4
0.15
0.3
1.8
0.25
1.55
5
E
6
6.2
4
E1
L
3.9
0.65
0.2
0.9
0.25
0.5
C
b
0.4
e
1.27 BSC
05/08/14
TITLE
Package: SO8
DRAWING NO.
REV.
GPC
Package Drawing Contact:
packagedrawings@atmel.com
6.543-5185.01-4
1
16
ATA6663/ATA6664 [DATASHEET]
9146I–AUTO–10/14
Figure 8-2. DFN8
Top View
D
8
PIN 1 ID
technical drawings
according to DIN
specifications
1
Dimensions in mm
Side View
Partially Plated Surface
Bottom View
1
4
COMMON DIMENSIONS
(Unit of Measure = mm)
Symbol MIN
NOM
0.85
0.035
0.21
3
MAX NOTE
8
5
A
A1
A3
D
0.8
0.9
0.05
0.26
3.1
Z
e
0
0.16
2.9
2.3
2.9
1.5
0.35
0.25
D2
D2
E
2.4
2.5
3
3.1
E2
L
1.6
1.7
Z 10:1
0.4
0.45
0.35
b
0.3
e
0.65
b
10/11/13
TITLE
DRAWING NO.
REV.
GPC
Package Drawing Contact:
packagedrawings@atmel.com
Package: VDFN_3x3_8L
Exposed pad 2.4x1.6
6.543-5165.03-4
1
ATA6663/ATA6664 [DATASHEET]
17
9146I–AUTO–10/14
9.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
• Put datasheet in the latest template
• Section 7 “Ordering Information” on page 16 updated
• Section 8 “Package Information” on pages 16 to 17 updated
9146I-AUTO-10/14
• Section 7 “Ordering Information” on page 16: Order quantity of ATA6663-FAQW
updated
9146H-AUTO-03/14
9146G-AUTO-06/12
9146F-AUTO-10/11
• Section 5“Electrical Characteristics” numbers 3.2 and 4.2 on page 10 to 11 updated
• Section 6 “Thermal Characteristics DFN8” on page 10 implemented
• Figure 1-1 “Block Diagram” on page 2 updated
9146E-AUTO-03/11
• Section 3.15 “Fail-safe Features” on page 9 updated
• Section 7 “Ordering Information” on page 17 updated
• Section 8 “Package Information” on pages 17 to 18 updated
• Section 6 “Electrical Characteristics” numbers 9.4 and 9.5 on page 13 updated
• Features updated
9146D-AUTO-09/10
9146C-AUTO-07/10
9146B-AUTO-05/10
• Headings 3.6 and 3.10: text updated
• Abs.Max.Ratings table: row “ESD HBM according to STM5.1” updated
18
ATA6663/ATA6664 [DATASHEET]
9146I–AUTO–10/14
X
X X X X
X
Atmel Corporation
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© 2014 Atmel Corporation. / Rev.: 9146I–AUTO–10/14
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