MRF340_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRF340_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF340
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF340 is Designed for
VHF Radios that use Collector
Modulation in the Driver/Final
Amplifiers to Produce an Amplitude
Modulated Signal.
FEATURES INCLUDE:
PACKAGE STYLE TO-220AB (COMMON EMITTER)
•
Replaces Original MRF340 in Most
Applications
•
High Gain Reduces Drive
Requirements
• Economical TO-220CE Package
MAXIMUM RATINGS
1.0 A
40 V
IC
VCES
PDISS
TSTG
12.5 W @ TC = 25 °C
-55 °C to +150 °C
10 °C/W
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 10 mA
IE = 5.0mA
40
V
40
BVCBO
BVEBO
ICES
V
4.0
V
VCES = 25V
CE = 10V
1.0
mA
---
V
IC = 100mA
10
200
hFE
V
CB = 30 V
f = 1.0 MHz
f =136 MHz
f =136 MHz
15
10
COB
pF
dB
VCC = 13.5V
Pout = 2.0 W
GPE
13.0
15.0
55
GPE
dB
%
VCC = 27 V
Pout = 8.0 Wpk
η
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
©2020 ICPDF网 联系我们和版权申明