BLW32 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BLW32 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLW32
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW32 is Designed for
Television Band IV & V
Applications up to 860 MHz.
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
C
E
E
B
• Common Emitter
• PG = 11 dB at 0.5 W/ 860 MHz
• Omnigold™ Metalization System
B
C
D
J
E
I
F
MAXIMUM RATINGS
G
H
K
1.0 A
50 V
#8-32 UNC
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VCBO
VCEO
VEBO
PDISS
TJ
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
1.055 / 26.80
.230 /5.84
A
B
C
D
E
F
G
H
I
30 V
.285 / 7.24
.007 / 0.18
.137 / 3.48
4.0 V
.572 / 14.53
.130 / 3.30
10.8 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
16 °C/W
.245 / 6.22
.255 / 6.48
.640 / 16.26
.175 / 4.45
.275 / 6.99
.217 / 5.51
.285 / 7.24
J
K
TSTG
θJC
ORDER CODE: ASI10677
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 2.0 mA
IC = 15 mA
IE = 1.0 mA
VCE = 30 V
VCE = 25 V
50
V
30
BVCEO
BVEBO
ICES
V
4.0
V
0.5
mA
---
IC = 150 mA
IC = 150 mA
20
120
hFE
VCE = 25 V
f = 860 MHz
11
PG
dB
POUT = 0.5 W
-60
IMD1
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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