AVD250 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | AVD250 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AVD250
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2NL FLG
A
DESCRIPTION:
.025 x 45°
4x .062 x 45°
2X
B
The ASI AVD250 is Designed for
Ø D
C
E
F
FEATURES:
G
H
L
I
J
· Input Matching Network
K
·
P
N
· Omnigold™ Metalization System
M
MINIMUM
inches mm
MAXIMUM
inches mm
DIM
/
/
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.030 / 0.76
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS
.396 / 10.06
.130 / 3.30
.407 / 10.34
17.8 A
IC
.193 / 4.90
.450 / 11.43
.125 / 3.18
55 V
VCC
PDISS
TJ
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
600 W @ TC £ 80 OC
-65 OC to +250 OC
-65 OC to +200 OC
0.2 OC/W
J
K
L
M
N
P
TSTG
qJC
ORDER CODE: ASI10565
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 10 mA
IC = 25 mA
IE = 1 mA
65
V
BVCER
BVEBO
ICES
RBE = 10 W
65
V
3.5
V
VCE = 50 V
VCE = 5.0 V
25
mA
---
hFE
IC = 1.0 A
15
120
PG
6.2
40
dB
%
VCC = 50 V
MHz
POUT = 250 W
f = 1025 - 1150
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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