AVD400 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | AVD400 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AVD400
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG (A)
A
4x .062 x 45°
.040 x 45°
2xB
C
DESCRIPTION:
F
E
The ASI AVD400 is Designed for
D
G
2xR
H
I
J
FEATURES:
K
L
·
P
N
·
M
· Omnigold™ Metalization System
MINIMUM
inches mm
MAXIMUM
inches mm
DIM
/
/
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.145 / 3.68
.120 / 3.05
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS
.396 / 10.06
.130 / 3.30
.407 / 10.34
28 A
IC
.193 / 4.90
.100 / 2.54
55 V
VCC
PDISS
TJ
.490 / 12.45
.510 / 12.95
1000 W @ TC £ 80 OC
-65 OC to +250 OC
-65 OC to +200 OC
0.12 OC/W
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
J
K
L
M
N
P
TSTG
qJC
ORDER CODE: ASI10567
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 15 mA
IC = 50 mA
IE = 1.0 mA
VCE = 50 V
VCE = 5.0 V
65
V
BVCER
BVEBO
ICES
RBE = 10 W
65
V
3.5
V
35
mA
---
hFE
IC = 1.0 A
15
120
PG
6.5
40
dB
%
VCC = 50 V
MHz
POUT = 400 W
f = 1025 - 1150
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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