AT12017-21 [ASI]
SILICON ABRUPT VARACTOR DIODE; 突发性硅变容二极管
| 型号： | AT12017-21 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | SILICON ABRUPT VARACTOR DIODE |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AT12017-21
SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12017-21 is Designed for High
Performance RF and Microwave
Applications Requiring an Abrupt
Variable Capacitance Characteristic.
PACKAGE STYLE 21
FEATURES INCLUDE:
• High Tuning Ratio, ∆CT = 9.5 MIN.
• High Quality Factor, Q = 300 MIN.
• Hermetic Package, CP = .20 pF
LS = .42 nH
MAXIMUM RATINGS
200 mA
IF
VR
120 V
1.75W @ TC 25 OC
-55 OC to +150 OC
-55 OC to +150 OC
70 OC/W
PDISS
TJ
TSTG
θJC
CHARACTERISTICS TC = 25 O
C
NONE
SYMBOL
VR
TEST CONDITIONS
MINIMUM TYPICAL MAXIM
UNITS
V
IR = 10 µA
IF = 1 mA
VR = 100 V
120
VF
IR
1.0
V
100
µA
CT
∆CT
Q
VR = 4 V
CT0/ CT120
VR = 4 V
IF = 10 mA
f = 1.0 MHz
f = 1.0 MHz
f = 50 MHz
f = 2400 MHz
20
9.0
300
22
24
pF
---
---
Ω
RS
0.9
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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