ASI2223-4_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI2223-4_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASI2223-4
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .400 2NL FLG
A
.025 x 45°
The ASI 2223-4 is Designed for
General Purpose Clacc C Applications
up to 2.3 GHz.
4x .062 x 45°
2X
B
ØD
C
E
F
G
FEATURES:
H
L
I
J
K
• Internal Input/Output Matching Networks
• PG = 8.0 dB at 4.0 W/2.3 GHz
P
N
M
• Omnigold™ Metalization System
MINIMUM
inches mm
MAXIMUM
inches mm
DIM
/
/
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.030 / 0.76
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS
.396 / 10.06
.130 / 3.30
.407 / 10.34
0.75 A
26 V
IC
VCC
PDISS
TJ
.193 / 4.90
.450 / 11.43
.125 / 3.18
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
15.9 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
11.0 °C/W
J
K
L
M
N
P
TSTG
θJC
ORDER CODE: ASI10531
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 5.0 mA
IC = 10 mA
IE = 1.0 mA
40
V
40
BVCER
BVEBO
ICBO
V
RBE = 10 Ω
3.5
V
V
CB = 22 V
CE = 5.0 V
1.0
mA
---
V
IC = 500 mA
POUT = 4.0 W
10
100
hFE
8.0
40
PG
dB
%
VCC = 22 V
f = 2.2 – 2.3 GHz
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
ASI2223-4
TEST BOARD
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
2/2
Specifications are subject to change without notice.
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