ASI2N5945 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI2N5945 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5945
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5945 is Designed for
FM Land Mobile Applications in the
400 to 960 MHz.
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
C
• Common Emitter
E
B
E
• PG = 9.0 dB at 2.0 W/470 MHz
• Omnigold™ Metalization System
B
C
D
J
E
I
MAXIMUM RATINGS
F
G
0.8 A
36 V
IC
H
K
#8-32 UNC
VCBO
VCEO
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
A
B
C
D
E
F
G
H
I
16 V
4.0 V
15 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
11.6 °C/W
.572 / 14.53
.130 / 3.30
.245 / 6.22
.255 / 6.48
.640 / 16.26
.175 / 4.45
.275 / 6.99
.217 / 5.51
.285 / 7.24
J
TSTG
θJC
K
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IE = 2.0 mA
16
V
36
BVCES
BVEBO
ICBO
V
4.0
V
V
CB = 15 V
CE = 5.0 V
1.0
---
mA
---
V
IC = 200 mA
POUT = 4.0 W
20
---
---
18
10
hFE
V
CB = 12.5 V
f = 1.0 MHz
f = 470 MHz
25
Cob
pF
VCC = 12.5 V
9.0
60
PG
dB
%
ηc
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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