ASI2010 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI2010 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASI2010
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 2L FLG
A
The ASI 2010 is Designed for General
Purpose Class C Power Amplifier
Applications up to 2300 MHz.
ØD
.060 x 45°
CHAMFER
C
B
E
F
G
H
FEATURES:
I
J
L
K
· PG = 5 dB min. at 10 W/ 2,000 MHz
· Hermetic Microstrip Package
P
N
M
· Omnigold™ Metalization System
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.032 / 0.81
A
B
C
D
E
F
G
H
I
.255 / 6.48
.132 / 3.35
MAXIMUM RATINGS
.125 / 3.18
.117 / 2.97
IC
1.5 A
.110 / 2.79
.117 / 2.97
VCC
PDISS
TJ
35 V
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
35 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
5.0 OC/W
J
K
L
M
N
P
TSTG
qJC
ORDER CODE: ASI10530
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 5 mA
IC = 15 mA
IE = 1 mA
VCB = 28 V
VCE = 5.0 V
45
V
BVCER
BVEBO
ICBO
RBE = 10 W
IC = 1000 mA
POUT = 10 W
45
V
3.5
V
5.0
mA
---
hFE
15
120
Cob
VCB = 28 V
VCC = 28 V
f = 1.0 MHz
f = 2.0 GHz
7.5
pF
PG
5.0
35
dB
%
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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