1N5719 [ASI]
SILICON PIN DIODE; 硅PIN二极管型号: | 1N5719 |
厂家: | ADVANCED SEMICONDUCTOR |
描述: | SILICON PIN DIODE |
文件: | 总1页 (文件大小:15K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5719
SILICON PIN DIODE
PACKAGE STYLE 01
DESCRIPTION:
The1N5719 is a Silicon PIN Diode
Designed for General Purpose
Attenuator and Switching Applications
from 100 MHz to 3 GHz.
MAXIMUM RATINGS
100 mA
IF
VR
150 V
250 mW @ TA = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
0.7 OC/mW
PDISS
TJ
TSTG
θJC
NONE
CHARACTERISTICS TC = 25 O
C
SYMBOL
VBR
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
V
IR = 10 µA
150
CT
VR = 100 V
f = 1.0 MHz
0.3
pF
RS
τ
IF = 100 mA
IF = 50 mA
VR = 10 V
f = 100 MHz
IR = 250 mA
f = 20 mA
1.25
Ω
100
µS
µS
trr
100
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
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