MBR2035F [ASEMI]
Dual High-Voltage Schottky Rectifiers REV; 双高压肖特基整流器>REV
| 型号： | MBR2035F |
| 厂家： | 
ASEMI |
| 描述： | Dual High-Voltage Schottky Rectifiers
REV |
| 文件： | 总3页 (文件大小：547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2030 THUR MBR2035
Dual High-Voltage Schottky Rectifiers
REV:1.01
◆ Half Bridge Rectified、Common Cathode Structure.
◆ Multilayer Metal -Silicon Potential Structure.
◆ Low Power Waste，High Efficiency.
Typical Reference
Data
VRRM= 30V
◆ Beautiful High Temperature Character.
◆ Have Over Voltage protect loop，high reliability.
◆ RoHs Product.
IF(AV)= 20A
VRRM= 35V
IF(AV)= 20A
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency Invers Circuit.
● Low Voltage Continued Circuit and Protection Circuit.
Polarity
■ MBR2030、MBR2035 Schottky diode,in the manufacture uses
the main process technology includes: Silicon epitaxial
substrate, P+ loop technology,The potential metal and the
silicon alloy technology, the device uses the two chip, the
common cathode, the plastic package structure.
Absolute Maximum Ratings
Item
Symbol MBR2030 MBR2035
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
VRRM
VDC
30
30
35
35
Unit
Average Rectified Forward Current TC=150℃
Device
Whole
20
10
IFAV
A
A
Unilateral
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
150
IFSM
Operating Junction Temperature
Storage Temperature
-40- +170
-40- +170
℃
℃
TJ
TSTG
Electricity Character
Representat
ive
Test Condition
Unit
Item
Minimum
MBR2030 MBR2035
100
10
uA
mA
V
TJ =25℃
TJ =125℃
VF TJ =25℃
IR
VR=VRRM
IF=10A
0.65
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MBR2030 THUR MBR2035
Dual High-Voltage Schottky Rectifiers
REV:1.01
The forward voltage and forward current curve
The reverse leak current and the reverse
voltage (single-device) curve
nt
Current Derating Curve, Per Eleme
The crunode capacitance curve
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MBR2030 THUR MBR2035
Dual High-Voltage Schottky Rectifiers
REV:1.01
ITO-220AB
注意事项：
1. 以金属螺丝(规格4-40)并加4.9mm直径金属垫片，将ITO-220AB自螺丝孔锁
在金属散热片上。
2 XXXX代表日期码，第一码表示公元年的最后一码，第二码表示生产时当月码
（A,B,C⋯.为一月，二月，三月⋯),第三，四码表示大量生产时批次码。
例如:2009年第一月生产的，D/C为9AXX。
MBR2030
XXXX
3. 包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。
修订内容
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相关型号：
MBR2035FCTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220AB, 3 PIN
MCC
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