MBR2035H [ASEMI]
MBR2035Dual High-Voltage Schottky Rectifiers; MBR2035Dual高压肖特基整流器
| 型号： | MBR2035H |
| 厂家： | 
ASEMI |
| 描述： | MBR2035Dual High-Voltage Schottky Rectifiers |
| 文件： | 总3页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2030 THUR MBR2035
Dual High-Voltage Schottky Rectifiers
REV:1.01
◆ Half Bridge Rectified、Common Cathode Structure.
◆ Multilayer Metal -Silicon Potential Structure.
◆ Low Power Waste，High Efficiency.
Typical Reference
Data
VRRM= 30V
◆ Beautiful High Temperature Character.
◆ Have Over Voltage protect loop，high reliability.
◆ RoHs Product.
IF(AV)= 20A
VRRM= 35V
IF(AV)= 20A
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency Invers Circuit.
● Low Voltage Continued Circuit and Protection Circuit.
Polarity
■ MBR2030、MBR2035 Schottky diode,in the manufacture uses
the main process technology includes: Silicon epitaxial
substrate, P+ loop technology,The potential metal and the
silicon alloy technology, the device uses the two chip, the
common cathode, the plastic half package structure.
Absolute Maximum Ratings
Item
Symbol MBR2030 MBR2035
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
VRRM
VDC
30
30
35
35
Unit
Average Rectified Forward Current TC=150℃
Device
Whole
20
10
IFAV
A
A
Unilateral
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
150
IFSM
Operating Junction Temperature
Storage Temperature
-40- +170
-40- +170
℃
℃
TJ
TSTG
Electricity Character
Representat
ive
Test Condition
Unit
Item
Minimum
MBR2030 MBR2035
100
10
uA
mA
V
TJ =25℃
TJ =125℃
VF TJ =25℃
IR
VR=VRRM
IF=10A
0.65
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Page1
MBR2030 THUR MBR2035
Dual High-Voltage Schottky Rectifiers
REV:1.01
The forward voltage and forward current curve
The reverse leak current and the reverse
voltage (single-device) curve
The crunode capacitance curve
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Page2
MBR2030 THUR MBR2035
Dual High-Voltage Schottky Rectifiers
REV:1.01
TO-220AB
www.asemi.tw
Page3
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