ASL226 [ASB]
700-6000MHz MMIC LNA; 700-6000MHz MMIC LNA
| 型号： | ASL226 |
| 厂家： | 
ADVANCED SEMICONDUCTOR BUSINESS INC. |
| 描述： | 700-6000MHz MMIC LNA |
| 文件： | 总21页 (文件大小：1663K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASL226
700-6000MHz MMIC LNA
Description
Features
ASL226 is a two-stage LNA for GPS receiver low noise
block. It has a low noise, high gain, and high linearity
over a wide range of frequency up to 6 GHz. It is also
suitable for use in the low noise amplifier block of the
mobile wireless systems of T-DMB, CDMA, GSM, PCS,
WCDMA, WiBro, WiMAX, and WLAN so on. The
amplifier is available in an SOT-363 package and
passes the stringent DC, RF, and reliability tests.
· Two-stage LNA
· 28 dB gain & 1.1 dB NF at 1575 MHz
· Unconditionally Stable
· Need only 5 components
· 3 kV Contact Discharge ESD Rating
achievable with one external L (Refer
to an application circuit at page 7)
Package Style: SOT-363
Typical Performance
Parameters
Frequency
Gain
Units
MHz
dB
Typical
Application Circuit
1575 1575 1575 1575
900
34
-14
-15
-40
18
1.3
9
1950 2450 3500 5800
·1575 MHz (1.8V)
·1575 MHz (2.2V)
·1575 MHz (3.3V)
·1575 MHz (NF=0.95dB, 3.3V)
·1575 MHz (Gain>30dB, 5V)
·1575 MHz
23.5
-14
-12
-40
11
28
-16
-15
-40
15.5
1.1
11
28.5
-20
-20
-40
17
30.5
-11
-14
-40
20
25
-15
-20
-35
16.5
1.3
10.5
8.5
3
21.5
-16
-16
-30
14
15
-16
-12
-30
10
1.8
8
11.5
-20
-20
-25
16.5
2.0
9
S11
dB
S22
dB
S12
dB
Output IP31)
Noise Figure
Output P1dB
Current
dBm
dB
1.2
9
0.95
11
1.0
11
1.3
11
(Robust ESD / ± 3 kV)
·1575 MHz
dBm
mA
V
5.5
2.2
8.5
3
9.5
3.3
18
8.5
3
8.5
3
8.5
3
8.5
3
(2.85V / 20dB Gain)
·1575 MHz (With SAW Filter)
·1176.45 MHz
Device Voltage
5
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
·1163~1210 / 1204~1240 MHz
·1558~1577 MHz
·1227 MHz
Product Specifications*
Parameters
Units
Min
27
Typ
Max
Frequency
MHz
dB
1575
28
·900 MHz
Gain
·1950 MHz
·2450 MHz
S11
dB
-16
-15
-40
15.5
1.1
11
S22
dB
·2300~2900 MHz
·2300~2900 MHz (Low Gain)
·3300 ~ 3800MHz
·4000~4500 MHz
·5800 MHz
S12
dB
Output IP3
Noise Figure
Output P1dB
Current
dBm
dB
14
1.3
11
dBm
mA
V
9
5.5
8.5
3
Device Voltage
* 100% in-house DC & RF testing is done on packaged products before taping.
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Pin No.
Function
VDD
Operating Case Temperature
Storage Temperature
-40 to +85°C
-40 to +150°C
+5 V
1
2,4,5
3
GND
Device Voltage
RF OUT
Operating Junction Temperature
Input RF Power (CW, 50ohm matched)*
+150°C
6
RF IN
22 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/21
ASB Inc. · sales@asb.co.kr
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Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Outline Drawing
Part No.
Dimensions (In mm)
Dimensions (In inch)
Symbols
MIN
0.90
0.025
0.875
0.20
0.10
1.90
1.15
2.00
MAX
1.10
0.10
1.00
0.40
0.15
2.10
1.35
2.20
MIN
.036
.001
.035
.008
.004
.076
.046
.080
MAX
.044
.004
.040
.016
.006
.084
.054
.088
A
A1
A2
b
C
D
E
E1
e
0.65 BSC.
.026 BSC.
e1
L
1.30 BSC.
0.425 REF.
.052 BSC.
.017 REF..
Pin No.
Function
VDD
Pin No.
Function.
1
2
3
4
5
6
GND
GND
RF IN
GND
RF OUT
Mounting Recommendation(in mm)
Note: 1. The number and size of ground via holes in a
circuit board is critical for thermal and RF
grounding considerations.
2. We recommend that the ground via holes be
placed on the bottom of lead pin 2,4 and 5 for
better RF and thermal performance, as
shown in the drawing at the left side.
3. You can download the gerber file of ASL226
from http://www.asb.co.kr/s-para/ASL226_gerber.zip
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 0
Voltage Level: 200 V
Class A
MM
Voltage Level: 40 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260°C reflow
2/21
ASB Inc. · sales@asb.co.kr
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Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
MIN.
TYP. MAX.
Unit
dB
dB
dB
dB
23.5
1.1
Noise Figure
NF
APPLICATION CIRCUIT
Input Return Loss
Output Return Loss
RLin
-14
-16
RLout
GPS
1575 MHz
+1.8 V
Reverse Isolation
ISO
Po(1dB)
OIP3
Icc
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
-35
6
dB
1 dB Gain Compression
Output Power
dBm
dBm
mA
3rd Intercept Point
Output Power 1)
14
6.5
F = 1.575 GHz,
Non-RF
Current
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1 pF
R1=180 W
ASL226
L2=6.8 nH
RF IN
C1=100 pF L1=4.7 nH
C2=1 mF
Bottom
VDD
* Note: C2 must be placed as close as possible to the device.
S-parameters
Gain & OIP3 & P1 & NF Vs. R1
50
40
R1
Vd
Ic
Gain
(dB)
OIP3
P1
NF
30
S21
(ohm) (V)
(mA)
(dBm) (dBm)
(dB)
20
10
0
180
160
120
100
1.8
1.8
1.8
1.8
6.5
6
24.2
23.9
23.6
23.5
14.3
14
6.4
7
1.03
1.05
1.07
1.09
S22
-10
S11
-20
-30
S12
5.5
5
13.1
12.6
7.2
7.3
-40
-50
-60
1400
1450
1500
1550
1600
1650
1700
1750
1800
Frequency [MHz]
3/21
ASB Inc. · sales@asb.co.kr
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Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
MIN.
TYP. MAX.
Unit
dB
dB
dB
dB
23.5
1.2
Noise Figure
NF
APPLICATION CIRCUIT
Input Return Loss
Output Return Loss
RLin
-14
-12
RLout
GPS
1575 MHz
+2.2 V
Reverse Isolation
ISO
Po(1dB)
OIP3
Icc
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
-40
9
dB
1 dB Gain Compression
Output Power
dBm
dBm
mA
3rd Intercept Point
Output Power 1)
11
5.5
F = 1.575 GHz,
Non-RF
Current
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1 pF
ASL226
L2=6.8 nH
RF IN
C1=100 pF L1=4.7 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
30
S21
20
10
0
S11
S11
S22
-10
S22
-20
-30
S12
-40
-50
1400
1450
1500
1550
1600
1650
1700
1750
1800
freq (1.400GHz to 1.800GHz)
Frequency [MHz]
5
4
3
2
1
0
0
indep(Source_stabcir[m1,::]) (0.000 to 51.000)
indep(Load_stabcir[m1,::]) (0.000 to 51.000)
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
4/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
MIN.
TYP. MAX.
Unit
dB
dB
dB
dB
20
1.2
-20
-16
Noise Figure
NF
APPLICATION CIRCUIT
Input Return Loss
Output Return Loss
RLin
RLout
GPS
1575 MHz
+3.3 V
Reverse Isolation
ISO
Po(1dB)
OIP3
Icc
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
-40
4
dB
1 dB Gain Compression
Output Power
dBm
dBm
mA
3rd Intercept Point
Output Power 1)
3
F = 1.575 GHz,
Non-RF
Current
8.5
1) OIP3 is measured with two tones at an output power of -20 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
C3=39 pF
RF OUT
ASL226
L3=33 nH
R2=43 W
C1=22 pF
RF IN
L2=1.5 nH
L1=6.2 nH
C2=1 mF
R1=33 W
Bottom
VDD = 3.3 V
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
30
S21
20
10
0
-10
S11
-20
S22
-30
S12
-40
-50
1400
1450
1500
1550
1600
1650
1700
1750
1800
Frequency [MHz]
20
18
16
14
12
10
8
6
4
2
0
indep(Source_stabcir[m1,::]) (0.000 to 51.000)
indep(Load_stabcir[m1,::]) (0.000 to 51.000)
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
5/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
TYP
28.5
0.95
-20
Unit
dB
28
1.1
-16
30.5
1.0
Noise Figure
NF
dB
APPLICATION CIRCUIT
Input Return Loss
RLin
-11
dB
Output Return Loss
Reverse Isolation
RLout
ISO
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
-15
-40
11
-20
-40
11
-14
-40
11
dB
dB
GPS
1 dB Gain Compression
Output Power
Po(1dB)
dBm
1575 MHz
3rd Intercept Point
Output Power
OIP3
Volt
Icc
F = 1.575 GHz
F = 1.575 GHz
15.51)
3
171)
3.3
9.5
202)
5
dBm
V
+3 V / +3.3 V / +5V
Device Voltage
F = 1.575 GHz,
Non-RF
Current
8.5
18
mA
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
2) OIP3 is measured with two tones at an output power of -3 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1 pF
ASL226
L2=6.8 nH
RF IN
C1=100 pF L1=4.7 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & Noise Figure & K-factor
40
35
30
25
20
0
-5
-10
-15
-20
-25
-30
15
-50oc
-50oc
25oc
100oc
25oc
10
100oc
5
0
1400
1450
1500
1550
1600
1650
1700
1750
1800
1400
1450
1500
1550
1600
1650
1700
1750
1800
Frequency (MHz)
Frequency (MHz)
0
0
-10
-20
-30
-40
-50
-60
-5
-50oc
25oc
100oc
-10
-15
-20
-25
-30
-50oc
25oc
100oc
1400
1450
1500
1550
1600
1650
1700
1750
1800
1400
1450
1500
1550
1600
1650
1700
1750
1800
Frequency (MHz)
Frequency (MHz)
6/21
ASB Inc. · sales@asb.co.kr
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September 2012
ASL226
700-6000MHz MMIC LNA
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
S22
S11
1400
1450
1500
1550
1600
1650
1700
1750
1800
Frequency (MHz)
freq (1.275GHz to 1.875GHz)
5
4
3
2
1
0
indep(Source_stabcir[m1,::]) (0.000 to 51.000)
indep(Load_stabcir[m1,::]) (0.000 to 51.000)
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Current vs. Temperature
Gain vs. Temperature
16
14
12
10
8
40
36
32
28
24
20
16
6
4
Frequency = 1575 MHz
2
0
-80
-60
-40
-20
0
20
40
60
80
100
120
-80
-60
-40
-20
0
20
40
60
80
100
120
Temperature (oC)
Temperature (oC)
P1dB vs. Temperature
Output IP3 vs. Tone Power (Frequency = 1575 MHz)
16
30
14
12
10
8
25
20
15
-50oc
10
25oc
Frequency = 1575 MHz
100oc
6
4
5
0
-80
-60
-40
-20
0
20
40
60
80
100
120
-16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
Temperature (oC)
Pout per Tone (dBm)
7/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
MIN.
TYP. MAX.
Unit
dB
26
1.2
-14
Noise Figure
NF
dB
APPLICATION CIRCUIT
Input Return Loss
RLin
dB
Robust ESD (± 3 kV)*
Output Return Loss
Reverse Isolation
RLout
ISO
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
-18
-35
12
dB
dB
GPS
1575 MHz
+3 V
1 dB Gain Compression
Output Power
Po(1dB)
dBm
3rd Intercept Point
Output Power 1)
OIP3
Icc
F = 1.575 GHz
17
dBm
mA
F = 1.575 GHz,
Non-RF
Current
8.5
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
* Test Method: Contact discharge on GPS patch antenna input. Applying 10 times
repeated voltage at 1 sec time Interval.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
C3=1.2 pF
RF OUT
ASL226
L3=6.8 nH
C1=22 pF
RF IN
L2=1.5 nH
L1=6.2 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
30
S21
20
10
0
S11
S22
S22
-10
S11
-20
-30
S12
-40
-50
1400
1450
1500
1550
1600
1650
1700
1750
1800
freq (1.400GHz to 1.800GHz)
Frequency [MHz]
5
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
indep(Source_stabcir[m1,::]) (0.000 to 51.000)
indep(Load_stabcir[m1,::]) (0.000 to 51.000)
Frequency (MHz)
8/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
MIN.
TYP. MAX.
Unit
dB
20
1.6
-8
Noise Figure
NF
dB
APPLICATION CIRCUIT
Input Return Loss
RLin
dB
Output Return Loss
Reverse Isolation
RLout
ISO
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
-9
-35
-5
dB
dB
GPS
1575 MHz
+2.85 V /
20dB Gain
1 dB Gain Compression
Output Power
Po(1dB)
dBm
3rd Intercept Point
Output Power 1)
OIP3
Icc
F = 1.575 GHz
5.5
4.0
dBm
mA
F = 1.575 GHz,
Non-RF
Current
1) OIP3 is measured with two tones at an output power of -20 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
C3=1 pF
RF OUT
ASL226
L2=6.8 nH
RF IN
C1=100 pF
L1=4.7 nH
C2=1 mF
R1=470 W
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
30
S21
20
10
0
S22
S11
-10
S11
S22
-20
-30
S12
-40
-50
1400
freq (1.400GHz to 1.800GHz)
1450
1500
1550
1600
1650
1700
1750
1800
Frequency [MHz]
5
4
3
2
1
0
0
indep(Source_stabcir[m1,::]) (0.000 to 51.000)
indep(Load_stabcir[m1,::]) (0.000 to 51.000)
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
9/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
MIN.
TYP. MAX.
Unit
dB
26.5
1.1
APPLICATION CIRCUIT
( With SAW Filter )
Noise Figure
NF
dB
Input Return Loss
RLin
-18
dB
Output Return Loss
Reverse Isolation
RLout
ISO
F = 1.575 GHz
F = 1.575 GHz
F = 1.575 GHz
-18
-40
11
dB
dB
GPS
1575 MHz
+3 V
1 dB Gain Compression
Output Power
Po(1dB)
dBm
3rd Intercept Point
Output Power 1)
OIP3
Icc
F = 1.575 GHz
14.5
8.5
dBm
mA
F = 1.575 GHz,
Non-RF
Current
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 15x11.5 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1 pF
ASL226
L2=6.8 nH
RF IN
SAW
C1=100 pF L1=4.7 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & Noise Figure & K-factor
60
40
20
S21
S11
S22
0
S22
-20
S11
-40
-60
S12
-80
1400
indep(Source_stabcir[m1,::]) (0.000 to 51.000)
indep(Load_stabcir[m1,::]) (0.000 to 51.000)
freq (1.275GHz to 1.875GHz)
1450
1500
1550
1600
1650
1700
1750
1800
Frequency [MHz]
1.5
5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
4
3
2
1
0
1400
1450
1500
1550
1600
1650
1700
1750
1800
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
10/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Frequency [MHz]
Parameter
Power Gain
Symbol
Unit
1176.45
33
1227
31
Gp
NF
dB
dB
dB
dB
dB
APPLICATION CIRCUIT
Noise Figure
1.1
1.0
-15
-15
-40
Input Return Loss
Output Return Loss
Reverse Isolation
RLin
RLout
ISO
-20
-20
1176.45 MHz /
1227 MHz
+3 V
-40
1
dB Gain Compression
Po(1dB)
OIP3
dBm
dBm
9
10.5
18
Output Power
3rd Intercept Point
Output Power1)
18
Current
Icc
mA
V
8.5
3
8.5
3
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1 pF
ASL226
L2=12 nH
RF IN
C1=100 pF L1=8.2 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
50
5
40
S21
30
4
3
2
1
0
20
10
0
S22
-10
S11
-20
-30
-40
-50
-60
S12
800
900
1000
1100
1200
1300
1400
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
11/21
ASB Inc. · sales@asb.co.kr
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Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Frequency [MHz]
Parameter
Power Gain
Symbol
Unit
1163-1210 1204-1240
Gp
NF
dB
dB
dB
dB
dB
30.5
1.0
30
1.0
-20
-18
-40
APPLICATION CIRCUIT
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
RLin
RLout
ISO
-20
-18
-40
1163 ~ 1210 MHz /
1204 ~ 1240 MHz
1
dB Gain Compression
Po(1dB)
OIP3
dBm
dBm
11
17
11
17
Output Power
3rd Intercept Point
Output Power1)
+3 V
Current
Icc
mA
V
8.5
3
8.5
3
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1.2 pF
L2=10 nH
ASL226
RF IN
C1=100 pF L1=6.8 nH
C2=1 mF
VDD
Bottom
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
50
5
40
S21
30
4
3
2
1
0
20
10
0
S22
-10
-20
S11
-30
S12
-40
-50
-60
900
1000
1100
1200
1300
1400
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
12/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Frequency [MHz]
Parameter
Power Gain
Symbol
Unit
1558-1577
Gp
NF
dB
dB
dB
dB
dB
27.5
0.95
-18
Noise Figure
APPLICATION CIRCUIT
Input Return Loss
Output Return Loss
Reverse Isolation
RLin
RLout
ISO
-18
-40
1558 ~ 1577 MHz
+3 V
1
dB Gain Compression
Po(1dB)
OIP3
dBm
dBm
11
16
Output Power
3rd Intercept Point
Output Power1)
Current
Icc
mA
V
8.5
3
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1 pF
ASL226
L2=6.8 nH
RF IN
C1=100 pF L1=4.7 nH
C2=1 mF
VDD
Bottom
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
50
5
4
3
2
1
0
40
S21
30
20
10
0
S22
S11
-10
-20
-30
-40
-50
-60
S12
1300
1400
1500
1600
1700
1800
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
13/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 900 MHz
F = 900 MHz
F = 900 MHz
TYP.
Unit
dB
34
1.3
-14
38
1.2
-10
Noise Figure
NF
dB
APPLICATION CIRCUIT
Input Return Loss
RLin
dB
Output Return Loss
Reverse Isolation
RLout
ISO
F = 900 MHz
F = 900 MHz
F = 900 MHz
-15
-40
9.0
-12
-45
12
dB
dB
CDMA, GSM
900 MHz
+3 V
1 dB Gain Compression
Output Power
Po(1dB)
dBm
3rd Intercept Point
Output Power 1)
OIP3
Icc
F = 900 MHz
18
8.5
3
23
18
5
dBm
mA
V
F = 900 MHz,
Non-RF
F = 900 MHz,
Non-RF
Current
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1.2 pF
L2=18 nH
ASL226
RF IN
C1=100 pF L1=15 nH
C2=1 mF
VDD
Bottom
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
50
40
5
4
3
2
1
0
S21
30
20
10
S22
S11
0
-10
-20
-30
-40
-50
-60
S12
600
700
800
900
1000
1100
1200
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
14/21
ASB Inc. · sales@asb.co.kr
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Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 1950 MHz
F = 1950 MHz
F = 1950 MHz
TYP.
Unit
dB
25
1.3
-15
28
1.05
-18
Noise Figure
NF
dB
APPLICATION CIRCUIT
Input Return Loss
RLin
dB
Output Return Loss
Reverse Isolation
RLout
ISO
F = 1950 MHz
F = 1950 MHz
F = 1950 MHz
-20
-35
-12
-35
14
dB
dB
WCDMA
1950 MHz
+3 V / +5 V
1 dB Gain Compression
Output Power
Po(1dB)
10.5
dBm
3rd Intercept Point
Output Power 1)
OIP3
Icc
F = 1950 MHz
16.5
8.5
3
23
18
5
dBm
mA
V
F = 1950 MHz,
Non-RF
F = 1950 MHz,
Non-RF
Current
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=0.75 pF
L2=5.6 nH
ASL226
RF IN
C1=100 pF L1=3.3 nH
C2=1 mF
VDD
Bottom
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
5
4
3
2
1
0
30
20
S21
10
0
S22
S11
-10
-20
-30
-40
-50
S12
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
15/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 2450 MHz
F = 2450 MHz
F = 2450 MHz
TYP.
Unit
dB
21.5
1.3
23.5
1.3
Noise Figure
NF
dB
APPLICATION CIRCUIT
Input Return Loss
RLin
-16
-18
dB
Output Return Loss
Reverse Isolation
RLout
ISO
F = 2450 MHz
F = 2450 MHz
F = 2450 MHz
-16
-30
11
-16
-35
12
dB
dB
WLAN
2450 MHz
+3 V / +4.2 V
1 dB Gain Compression
Output Power
Po(1dB)
dBm
3rd Intercept Point
Output Power 1)
OIP3
Icc
F = 2450 MHz
14
8.5
3
18
13
dBm
mA
V
F = 2450 MHz,
Non-RF
F = 2450 MHz,
Non-RF
Current
Device Voltage
Vdd
4.2
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=0.75 pF
L2=3.6 nH
ASL226
RF IN
C1=100 pF L1=2.2 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
5
4
3
2
1
0
30
S21
20
10
0
S22
-10
S11
-20
-30
S12
-40
1800
2000
2200
2400
2600
2800
3000
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
16/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Frequency [MHz]
Parameter
Power Gain
Symbol
Unit
2300 2900 2300 2700
Gp
NF
dB
dB
dB
dB
dB
22.5
1.3
19
1.45
-14
-10
-30
25
1.05
-18
-12
-30
23
1.15
-15
-12
-30
Noise Figure
APPLICATION CIRCUIT
Input Return Loss
Output Return Loss
Reverse Isolation
RLin
RLout
ISO
-18
-15
-30
WiMAX
1
dB Gain Compression
Po(1dB)
OIP3
dBm
dBm
11
11
20
2300 ~ 2900 MHz
+3 V / +4.5 V
Output Power
3rd Intercept Point
Output Power1)
12.5
Current
Icc
mA
V
8.5
3
17
Device Voltage
Vdd
4.5
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=0.75 pF
L2=3.6 nH
ASL226
RF IN
C1=100 pF L1=1.8 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & Noise Figure & K-factor (4.5V)
40
30
S21
20
10
0
S22
-10
S11
-20
-30
S12
-40
2000
2200
2400
2600
2800
3000
3200
Frequency [MHz]
5
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
17/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Frequency [MHz]
Parameter
Power Gain
Symbol
Unit
2300
17
2900
15
Gp
NF
dB
dB
dB
dB
dB
APPLICATION CIRCUIT
Noise Figure
1.3
-11
-11
-30
1.45
-12
Input Return Loss
Output Return Loss
Reverse Isolation
RLin
RLout
ISO
-18
WiMAX
-30
1
dB Gain Compression
2300 ~ 2900 MHz
+3 V / Low Gain
Po(1dB)
OIP3
dBm
dBm
5
8
5.5
8
Output Power
3rd Intercept Point
Output Power1)
Current
Icc
mA
V
8.5
3
8.5
3
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=1.5 pF
L2=3.6 nH
ASL226
R1=39 W
RF IN
C1=100 pF L1=1.5 nH
C2=1 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
40
5
4
3
2
1
0
30
20
S21
10
0
S11
S22
S12
-10
-20
-30
-40
-50
2000
2200
2400
2600
2800
3000
3200
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
18/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Frequency [MHz]
Parameter
Power Gain
Symbol
Unit
3300 3800 3300 3800
Gp
NF
dB
dB
dB
dB
dB
16.5
1.55
-16
14.5
1.8
19
1.3
-16
-16
-30
17
1.5
-20
-18
-28
Noise Figure
APPLICATION CIRCUIT
Input Return Loss
Output Return Loss
Reverse Isolation
RLin
RLout
ISO
-16
-12
-30
-20
-30
3300 ~ 3800 MHz
+3 V / +5 V
1
dB Gain Compression
Po(1dB)
OIP3
dBm
dBm
9
7.5
9.5
10
19
8
Output Power
3rd Intercept Point
Output Power1)
12
16.5
Current
Icc
mA
V
8.5
3
18
5
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
C3=0.75 pF
L2=2.0 nH
RF OUT
ASL226
RF IN
C1=10 pF
C2=1 mF
C4=10 mF
Bottom
VDD
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor (3V)
40
5
4
3
2
1
0
30
S21
20
10
0
S22
-10
S11
-20
-30
-40
-50
S12
2800
3000
3200
3400
3600
3800
4000
4200
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Frequency [MHz]
Frequency (MHz)
19/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Frequency [MHz]
Parameter
Power Gain
Symbol
Unit
4000 4500 4000 4500
Gp
NF
dB
dB
dB
dB
dB
12.5
2.0
10.5
2.2
15
1.6
-15
-18
-30
13
1.8
-12
-15
-28
Noise Figure
APPLICATION CIRCUIT
Input Return Loss
Output Return Loss
Reverse Isolation
RLin
RLout
ISO
-10
-14
-30
-10
-12
-30
4000 ~ 4500 MHz
+3 V / +5 V
1
dB Gain Compression
Po(1dB)
OIP3
dBm
dBm
7
9
Output Power
3rd Intercept Point
Output Power1)
9.5
17
Current
Icc
mA
V
8.5
3
18
5
Device Voltage
Vdd
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=0.75 pF
L2=1.5 nH
ASL226
RF IN
C1=100 pF L1=1 nH
C2=1 mF
VDD
Bottom
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor (5V)
30
5
4
3
2
1
0
20
S21
10
0
-10
-20
-30
-40
S11
S22
S12
3000
3500
4000
4500
5000
5500
6000
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
20/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
ASL226
700-6000MHz MMIC LNA
Parameter
Power Gain
Symbol
Gp
Test Conditions
F = 5800 MHz
F = 5800 MHz
F = 5800 MHz
MIN.
TYP. MAX.
Unit
dB
11.5
2.0
Noise Figure
NF
dB
APPLICATION CIRCUIT
Input Return Loss
RLin
-20
dB
Output Return Loss
Reverse Isolation
RLout
ISO
F = 5800 MHz
F = 5800 MHz
F = 5800 MHz
-20
-25
9
dB
dB
5800 MHz
+3 V
1 dB Gain Compression
Output Power
Po(1dB)
dBm
3rd Intercept Point
Output Power 1)
OIP3
Icc
F = 5800 MHz
16.5
8.5
dBm
mA
F = 5800 MHz,
Non-RF
Current
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 14x11.3 mm2, 0.8T)
Schematic
Top
RF OUT
C3=0.75 pF
L1=1.5 nH
ASL226
RF IN
C1=100 pF
C2=1 mF
VDD
Bottom
* Note: Gain and current can be reduced by controlling VDD to 2 V.
C2 must be placed as close as possible to the device.
S-parameters & K-factor
5
4
3
2
1
0
30
20
10
S21
0
S22
-10
-20
-30
-40
S11
S12
0
500
1000
1500
2000
2500
3000
3500
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
Frequency (MHz)
Frequency [MHz]
21/21
ASB Inc. · sales@asb.co.kr
·
Tel: +82-42-528-7223
September 2012
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