ASL29W [ASB]
5-3000 MHz High Linearity LNA MMIC; 5-3000 MHz的高线性度低噪声放大器MMIC型号: | ASL29W |
厂家: | ADVANCED SEMICONDUCTOR BUSINESS INC. |
描述: | 5-3000 MHz High Linearity LNA MMIC |
文件: | 总11页 (文件大小:834K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ASL29W
5-3000 MHz High Linearity LNA MMIC
Features
Description
The ASL29W, a wideband linear low noise amplifier
MMIC, has a low noise and high linearity at low bias
current, being suitable for use in both receiver and
transmitter of telecommunication systems up to 3 GHz.
S11 down to –15 dB is easily achieved for low noise
application to provide a good productivity. The amplifi-
er is available in an SOT-89 package and passes
through the stringent DC, RF, and reliability tests.
·12.5 dB Gain at 2 GHz
·22 dBm P1dB at 2 GHz
·39.5 dBm Output IP3 at 2 GHz
·0.9 dB NF at 2 GHz
·MTTF > 100 Years
ASL29W
·Single Supply
Package Style: SOT-89
Typical Performance
Application Circuit
Parameters
Frequency
Gain
Units
Typical
2000
12.5
-14
MHz
dB
900
19
-15
-18
37
0.9
22
75
5
2700
10.2
-18
-12
40
· IF
· LTE
S11
dB
· CDMA
· GSM
S22
dB
-18
Output IP31)
Noise Figure
Output P1dB
Current
dBm
dB
39.5
0.9
· PCS
1.15
23
· WCDMA
· 2300 ~ 2700 MHz
dBm
mA
V
22
75
75
Device Voltage
5
5
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Testing Frequency
Gain
Units
MHz
dB
Min
18
Typ
900
19
Max
S11
dB
-15
-18
37
S22
dB
Output IP3
Noise Figure
Output P1dB
Current
dBm
dB
36
0.9
22
1.1
90
dBm
mA
V
21
60
75
Device Voltage
5
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Rating
-40 to +85°C
-40 to +150°C
+6 V
Pin No.
Function
RF IN
Device Voltage
1
2
3
Operating Junction Temperature
Input RF Power (CW, 50ohm matched)*
+150°C
GND
23 dBm
RF OUT / Bias
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/11
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Part No.
Lot No.
Outline Drawing
Dimensions (In mm)
Symbols
MIN
1.40
0.89
0.36
0.41
0.38
4.40
1.40
3.64
2.40
2.90
0.35
0.65
1.40
NOM
1.50
1.04
0.42
0.47
0.40
4.50
1.60
---
2.50
3.00
0.40
0.75
1.50
MAX
1.60
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
0.45
0.85
1.60
A
L
b
b1
C
D
D1
E
E1
e1
H
ASL29W
Pxxxx
S
e
Pin No.
Function
Input
1
2
3
GND
Output
Mounting Recommendation (in mm)
Note: 1. The number and size of ground via holes in
a circuit board is critical for thermal and RF
grounding considerations.
2. We recommend that the ground via holes
be placed on the bottom of the lead pin 2
and exposed pad of the device for better RF
and thermal performance, as shown in the
drawing at the left side.
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 550 V
Class A
MM
Voltage Level: 50 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260°C reflow
2/11
ASB Inc.
·
sales@asb.co.kr
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Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
OIP3 & Noise Figure Vs. Bias Resistor
CDMA
WCDMA
CDMA
NF OIP3
(dB) (dBm)
WCDMA
NF OIP3
(dB) (dBm)
R3
R2
Vd
Ic
R3
R2
Vd
Ic
NF
OIP3
NF
OIP3
(ohm) (ohm) (V)
(mA)
(ohm) (ohm) (V)
(mA)
(dB)
(dBm)
(dB)
0.94
1.01
0.95
0.98
1.02
0.92
0.99
1.01
0.99
1.03
0.93
0.95
(dBm)
5.1k
4.7k
4.3k
3.9k
3.6k
5.1k
4.7k
4.3k
3.9k
3.6k
5.6k
5.1k
4.32
4.41
4.49
4.61
4.7
72
60
50
42
28
70
56
45
34
27
69
58
0.99
0.91
0.93
0.94
1.01
0.91
0.92
0.91
0.94
0.96
0.91
0.91
37.2
36.8
36.1
32.8
29.1
37.1
36.5
34.5
31.1
28.1
36.9
36.1
40.1
38.4
36
6.2k 3.67
5.6k 3.81
5.1k 3.93
66
58
50
43
35
27
22
0.90
0.91
0.89
0.94
0.95
0.97
1.01
36.3
35.6
34.6
32.7
30.8
27.4
25.4
0.93
0.92
0.95
0.97
0.94
1.01
1.07
39.3
37.9
35.9
33.9
31.6
29.2
28.5
9.1
31.7
29.9
39.5
37.3
34.9
31.2
29.4
39.5
38
4.7k
4.3k 4.22
3.9k 4.4
3.6k 4.49
4.11
20
4.22
4.34
4.46
4.58
4.65
3.92
4.1
11
4.7k
4.3k
3.9k
3.6k
4.22
4.32
4.48
4.57
50
41
31
25
0.93
0.94
1.01
1.02
34.8
33.2
29.2
26.7
0.95
0.97
0.99
1.07
35.9
33.5
30.2
28.9
15
* Test Application Circuit : ASL29W CDMA / WCDMA application circuit
* OIP3 Test Condition : Freq. – 894MHz / – 2140MHz, +10dBm output power per tone
* VD : Applied voltage to the device
3/11
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Frequency (MHz)
Magnitude S21 (dB)
Magnitude S11 (dB)
Magnitude S22 (dB)
Output P1dB (dBm)
Output IP31) (dBm)
Noise Figure (dB)
Device Voltage (V)
Current (mA)
70
25
150
24
300
22.5
-8
APPLICATION CIRCUIT
-13
-18
21.5
31
-11
-18
21.5
32
-18
21.5
33
IF
30 ~ 400 MHz
+5 V
3.0
5
3.0
5
2.9
5
75
75
75
1) OIP3 is measured with two tones at an output power of +10 dBm/tone sepa-
rated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R4=9.1 W
C4=10 mF
C3=100 pF
L1=1 mH
R1= 43 kW
C1=1 mF
C2=1 mF
RF OUT
RF IN
ASL29W
R2=82 W
R3= 5.1 kW
S-parameters & K-factor
0
-5
30
25
20
15
10
5
-10
-15
-20
0
0
100
200
300
400
500
0
100
200
300
400
500
Frequency(MHz)
Frequency(MHz)
5
4
3
2
1
0
0
-5
-10
-15
-20
-25
-30
0
500
1000
1500
2000
2500
3000
3500
0
100
200
300
400
500
Frequency(MHz)
Frequency(MHz)
4/11
ASB Inc.
·
sales@asb.co.kr
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Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Frequency (MHz)
698~787
20
Magnitude S21 (dB)
Magnitude S11 (dB)
Magnitude S22 (dB)
Output P1dB (dBm)
Output IP31) (dBm)
Noise Figure (dB)
Device Voltage (V)
Current (mA)
APPLICATION CIRCUIT
-18
-13
22.5
36.5
0.75
5
LTE
698 ~ 787 MHz
+5 V
75
1) OIP3 is measured with two tones at an output power of +10 dBm/tone se-
parated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R3=9.1 W
C4=10 nF
C3=100 pF
L2=82 nH
R1=43 kW
C1=9 pF
C2=100 pF
RF OUT
RF IN
ASL29W
3 mm
R2=5.1 kW
L1=10 nH
S-parameters & K-factor
25
0
-5
20
15
10
5
-10
-15
-20
-25
-30
0
400
500
600
700
800
900
1000
400
500
600
700
800
900
1000
Frequency[MHz]
Frequency[MHz]
5
4
3
2
1
0
-5
-10
-15
-20
-25
0
0
400
500
600
700
800
900
1000
500
1000
1500
2000
2500
3000
3500
Frequency[MHz]
Frequency(MHz)
5/11
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Frequency (MHz)
Magnitude S21 (dB)
Magnitude S11 (dB)
Magnitude S22 (dB)
Output P1dB (dBm)
Output IP31) (dBm)
Noise Figure (dB)
Device Voltage (V)
Current (mA)
824~894
19.5
-15
890~960
19
APPLICATION CIRCUIT
-15
-18
22
-15
22
CDMA & GSM
824 ~ 960 MHz
+5 V
37
37
0.95
5
0.9
5
75
75
1) OIP3 is measured with two tones at an output power of +10 dBm/tone se-
parated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R3=9.1 W
C4=10 nF
C3=100 pF
L2=22 nH
C2=100 pF
R1=43 kW
C1=7.5 pF
RF OUT
RF IN
ASL29W
3 mm
R2=5.1 kW
L1=6.8 nH
S-parameters & K-factor
25
0
-5
20
15
10
5
-10
-15
-20
-40oc
-40oc
25oc
85oc
25oc
-25
85oc
-30
0
600
-35
600
700
800
900
1000
1100
1200
700
800
900
1000
1100
1200
Frequency(MHz)
Frequency(MHz)
5
0
4
3
2
1
0
-5
-10
-15
-20
-25
-40oc
25oc
85oc
600
700
800
900
1000
1100
1200
0
500
1000
1500
2000
2500
3000
3500
Frequency(MHz)
Frequency(MHz)
6/11
ASB Inc.
·
sales@asb.co.kr
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Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Gain vs. Temperature
Current vs. Temperature
26
140
120
100
80
24
22
20
18
60
40
Frequency=850MHz
16
20
14
-60
0
-60
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature(oC)
Temperature(oC)
Noise Figure vs. Temperature
P1dB vs. Temperature
28
1.4
1.2
1.0
0.8
0.6
0.4
26
24
22
20
Frequency=850MHz
Frequency=850MHz
18
16
0.2
0.0
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
Temperature(oC)
Temperature(oC)
Output IP3 vs. Tone Power (Frequency = 850 MHz)
55
50
45
40
35
30
-40oc
25oc
85oc
25
20
15
10
5
6
7
8
9
10
11
12
13
14
15
16
Pout per Tone(dBm)
7/11
ASB Inc.
·
sales@asb.co.kr
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Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Frequency (MHz)
1710~1785
Magnitude S21 (dB)
Magnitude S11 (dB)
Magnitude S22 (dB)
Output P1dB (dBm)
Output IP31) (dBm)
Noise Figure (dB)
Device Voltage (V)
Current (mA)
14
-18
-15
22
APPLICATION CIRCUIT
PCS
1710 ~ 1785 MHz
+5 V
38
0.85
5
75
1) OIP3 is measured with two tones at an output power of +10 dBm/tone se-
parated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R3=9.1 W
C5=10 nF
C4=100 pF
L2=39 nH
C3=100 pF
R1= 43 kW
C1=100 pF
RF IN
RF OUT
ASL29W
5.5 mm
L1=39 nH
C2=1.5
pF
R2= 5.1
kW
S-parameters & K-factor
0
-5
25
20
15
10
5
-10
-15
-20
-25
-30
0
1500
1500
1600
1700
1800
1900
2000
1600
1700
1800
1900
2000
Frequency(MHz)
Frequency(MHz)
5
4
3
2
1
0
0
-5
-10
-15
-20
-25
1500
1600
1700
1800
1900
2000
0
500
1000
1500
2000
2500
3000
3500
Frequency(MHz)
Frequency(MHz)
8/11
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Frequency (MHz)
Magnitude S21 (dB)
Magnitude S11 (dB)
Magnitude S22 (dB)
Output P1dB (dBm)
Output IP31) (dBm)
Noise Figure (dB)
Device Voltage (V)
Current (mA)
1920~1980
2110~2170
12.5
-14
-18
22
12
-18
-15
22.5
40
APPLICATION CIRCUIT
WCDMA
1920 ~ 2170 MHz
+5 V
39.5
0.9
5
0.95
5
75
75
1) OIP3 is measured with two tones at an output power of +10 dBm/tone se-
parated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R3=9.1 W
C5=10 nF
C4=100 pF
L2=39 nH
R1= 43 kW
C1=100 pF
C3=100 pF
RF OUT
RF IN
ASL29W
4.5 mm
L1=10 nH
R2= 5.1
kW
C2=1.2
pF
S-parameters & K-factor
20
0
-5
-40oc
15
10
5
25oc
85oc
-10
-15
-20
-25
-40oc
25oc
85oc
0
1700
1800
1900
2000
2100
2200
2300
2400
1700
1800
1900
2000
2100
2200
2300
2400
Frequency(MHz)
Frequency(MHz)
5
4
3
2
1
0
-5
-40oc
25oc
85oc
-10
-15
-20
-25
0
0
1700
1800
1900
2000
2100
2200
2300
2400
500
1000
1500
2000
2500
3000
3500
Frequency(MHz)
Frequency(MHz)
9/11
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Gain vs. Temperature
Current vs. Temperature
120
15
100
80
60
40
20
14
13
12
Frequency=2140MHz
11
10
-60
-60
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature(oC)
Temperature(oC)
Output IP3 vs. Tone Power (Frequency = 2140 MHz)
P1dB vs. Temperature
26
50
45
40
35
30
24
22
20
18
16
-40oc
25
25oc
Frequency=2140MHz
85oc
20
15
-60
-40
-20
0
20
40
60
80
100
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18
Temperature(oC)
Pout per Tone(dBm)
10/11
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
ASL29W
5-3000 MHz High Linearity LNA MMIC
Frequency (MHz)
Magnitude S21 (dB)
Magnitude S11 (dB)
Magnitude S22 (dB)
Output P1dB (dBm)
Output IP31) (dBm)
Noise Figure (dB)
Device Voltage (V)
Current (mA)
2300
11.5
-15
-18
23
2500
11
2700
10.2
-18
-12
23
APPLICATION CIRCUIT
-18
-14
23
2300 ~ 2700 MHz
+5 V
40
40
40
1.05
5
1.1
5
1.15
5
75
75
75
1) OIP3 is measured with two tones at an output power of +10 dBm/tone sepa-
rated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R3=9.1 W
C5=10 nF
C4=100 pF
L2=39 nH
C3=100 pF
R1= 43 kW
C1=100 pF
RF OUT
RF IN
ASL29W
2.5 mm
L1=10 nH
R2= 5.1
kW
C2=1 pF
S-parameters & K-factor
20
0
-5
15
10
5
-10
-15
-20
-25
-30
0
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
Frequency(MHz)
Frequency(MHz)
5
4
3
2
1
0
0
-5
-10
-15
-20
-25
2000
2200
2400
2600
2800
3000
0
500
1000
1500
2000
2500
3000
3500
Frequency(MHz)
Frequency(MHz)
11/11
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
February 2010
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