AOD450_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | AOD450_08 |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总6页 (文件大小:186K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AOD450
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
TheꢀAOD450ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand
designꢀtoꢀprovideꢀexcellentꢀRDS(ON)ꢀwithꢀlowꢀgate
charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀinverter,ꢀload
switchingꢀandꢀgeneralꢀpurposeꢀapplications.
VDSꢀ(V)ꢀ=ꢀ200V
IDꢀ=ꢀ3.8Aꢀꢀ(VGSꢀ=ꢀ10V)
R
DS(ON)ꢀ<0.7Ωꢀ(VGSꢀ=ꢀ10V)
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
VDS
200
V
GateꢁSourceꢀVoltage
VGS
±30
V
A
TC=25°C
3.8
ContinuousꢀDrain
Current
TC=100°C
ID
2.7
PulsedꢀDrainꢀCurrentꢀC
AvalancheꢀCurrentꢀC
RepetitiveꢀavalancheꢀenergyꢀL=1.35mHꢀC
IDM
IAR
EAR
10
3
6
A
mJ
TC=25°C
PowerꢀDissipationꢀB
TC=100°C
25
PD
W
12.5
2.1
TA=25°C
PDSM
W
PowerꢀDissipationꢀA
1.3
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
17.1
50
Max
30
60
6
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁCaseꢀB
SteadyꢁState
SteadyꢁState
RθJC
4
Alpha & Omega Semiconductor, Ltd.
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AOD450
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=10mA,ꢀVGS=0V
VDS=160V,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
200
V
1
5
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
µA
TJ=55°C
VDS=0V,ꢀVGS=±30V
VDS=VGS,ꢀꢀID=250µA
VGS=10V,ꢀVDS=15V
VGS=10V,ꢀID=3.8A
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
100
6
nA
V
VGS(th)
ID(ON)
3
5
10
A
0.55
1.1
8.7
0.8
0.70
1.32
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
Ω
TJ=125°C
VDS=15V,ꢀID=3.8A
IS=1A,ꢀVGS=0V
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrentG
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
S
V
A
1
6
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
215
32
pF
pF
pF
Ω
VGS=0V,ꢀVDS=25V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
7.2
5.5
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
SWITCHING PARAMETERS
Qg(10V) TotalꢀGateꢀCharge
Qg(4.5V) TotalꢀGateꢀCharge
3.82
0.92
1.42
1.47
6.3
nC
nC
nC
nC
ns
VGS=10V,ꢀVDS=25V,ꢀID=3.8A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
VGS=10V,ꢀVDS=25V,ꢀRL=6.5Ω,
RGEN=3Ω
3.3
ns
tD(off)
tf
TurnꢁOffꢀDelayTime
10.5
2.8
ns
TurnꢁOffꢀFallꢀTime
ns
trr
IF=3.8A,ꢀdI/dt=100A/µs
IF=3.8A,ꢀdI/dt=100A/µs
59
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
ns
Qrr
142
nC
ꢀ2
A:ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1in ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTꢀAꢀ=25°C.ꢀTheꢀPower
dissipationꢀPDSMꢀisꢀbasedꢀonꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀaꢀgivenꢀapplicationꢀdependsꢀonꢀthe
user'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀfoꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupperꢀdissipation
limitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C:ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=175°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300ꢀµsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀa
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=175°C.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀinꢀꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT =25°C.ꢀTheꢀSOA
A
curveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
*Thisꢀdeviceꢀisꢀguaranteedꢀgreenꢀafterꢀdataꢀcodeꢀ8X11ꢀ(Sepꢀ1STꢀ2008).
Rev1:ꢀSepꢀ2008
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD450
TYPICAL ELECTRICAL CHARACTERISTICS
14
1.0E+02
1.0E+01
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
1.0Eꢁ03
12
VDS=15V
10V
10
8V
8
6
4
2
0
125°C
25°C
7V
VGS=6V
15
0
5
10
20
2
4
6
8
10
VDS(Volts)
VGS(Volts)
Figure 1:On-Region Characteristics
Figure 2: Transfer Characteristics
800
700
600
500
400
300
200
2.4
2.2
2
VGS=10V
VGS=10V,ꢀ3.8A
1.8
1.6
1.4
1.2
1
0.8
0
0
1
2
3
4
5
6
7
25
50
75
100
125
150
175
ID (A)
Temperature(°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1400
1200
1.0E+01
ID=3.8A
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
1.0Eꢁ03
1.0Eꢁ04
1.0Eꢁ05
125°C
125°C
25°C
1000
800
600
400
200
25°C
6
8
10
12
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
14
16
18
20
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
V
Alpha & Omega Semiconductor, Ltd.
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AOD450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
250
200
150
100
50
10
8
VDS=10V
ID=3.8A
Ciss
6
4
Coss
2
Crss
0
0
0
1
2
3
4
0
5
10
15
DS (Volts)
20
25
Q
g (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
200
TJ(Max)=175°C,ꢀTC=25°C
160
120
80
40
0
TJ(max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µ
1ms
DC
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=6°C/W
PD
0.1
0.01
Ton
T
SingleꢀPulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
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AOD450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
5
4
3
2
1
TA=25°C
0
0
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
T
CASE (°C)
Figure 13: Power De-rating (Note B)
50
5
4
3
2
1
0
TA=25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
1
0.1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
PD
0.01
RθJA=60°C/W
SingleꢀPulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD450
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
ꢁ
ꢁ
DUT
Vgs
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
ꢁ
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
EAꢀꢀRꢀ=ꢀ1/2ꢀLIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
ꢁ
Vds
Alpha & Omega Semiconductor, Ltd.
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