AOD452A [AOS]
N-Channel SDMOSTM POWER Transistor; N沟道SDMOSTM功率晶体管
| 型号： | AOD452A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel SDMOSTM POWER Transistor |
| 文件： | 总7页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD452A
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD452A/L is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications. AOD452A and AOD452AL are
electrically identical.
VDS (V) = 25V
ID = 55A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
R
DS(ON) < 8mΩ
DS(ON) <14mΩ
R
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-AOD452AL is Halogen Free
TO-252
D-PAK
Bottom View
Top View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
25
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
CurrentG
Pulsed Drain Current C
Pulsed Forward Diode CurrentC
Avalanche Current C
VGS
±20
TC=25°C
55
TC=100°C
ID
43
IDM
ISM
IAR
EAR
120
A
120
35
31
Repetitive avalanche energy L=50µH C
mJ
W
TC=25°C
50
PD
Power Dissipation B
TC=100°C
25
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
14.2
39
Max
20
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Maximum Junction-to-TAB B
Steady-State
Steady-State
Steady-State
RθJC
2.5
RθJC-TAB
2.7
3.2
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
V
DS=25V, VGS=0V
10
50
100
3
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
GS=10V, VDS=5V
VGS=10V, ID=30A
1.2
2
V
120
A
6
8
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
8.6
11.5
50
12
14
V
GS=4.5V, ID=20A
DS=5V, ID=30A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A, VGS=0V
0.7
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
990
210
125
1.1
1180
275
175
1.7
1450
350
245
2.5
pF
pF
pF
Ω
V
GS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18
9
21.7
11
26
13
5
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=12.5V, ID=30A
3
4
4.5
6.4
6.8
13.8
21.5
8.7
10.6
16
9
VGS=10V, VDS=12.5V, RL=0.42Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=30A, dI/dt=500A/µs
IF=30A, dI/dt=500A/µs
8.4
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
20
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev0 : July 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
5V
VDS=5V
6V
7V
4.5V
4V
VGS=3.5V
125°C
25°C
4
0
1
2
3
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
18
16
14
12
10
8
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=30A
VGS=4.5V
VGS=10V
6
4
VGS=4.5V
ID=20A
2
0
0.8
0
5
10
15
D (A)
20
25
30
I
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100 125 150 175 200
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
20
15
10
5
1.0E+02
1.0E+01
ID=30A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
VDS=12.5V
ID=30A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=3°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
0.00001
0
0
25
50
75
100
125
150
175
0.000001
0.0001
0.001
T
CASE (°C)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
Figure 13: Power De-rating (Note B)
10000
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0
0
0
0.01 0.1
1
10 100 1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
14
12
10
8
3
30
25
20
15
10
5
12
10
8
di/dt=800A/us
di/dt=800A/us
2.5
2
125ºC
125ºC
trr
25ºC
25ºC
1.5
1
6
125ºC
Qrr
Irm
125ºC
25ºC
6
4
4
S
2
0.5
0
25ºC
20
2
0
0
0
0
5
10
15
20
25
30
0
5
10
15
IS (A)
25
30
I
S (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
15
12
9
2.5
2
25
20
15
10
5
10
Is=20A
Is=20A
125ºC
125ºC
8
6
4
2
0
trr
25ºC
1.5
1
25ºC
Qrr
Irm
125º
125ºC
25ºC
6
S
3
0.5
25ºC
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD452A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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