AON7506 [AOS]
30V N-Channel AlphaMOS; 30V N通道AlphaMOS
| 型号： | AON7506 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel AlphaMOS |
| 文件： | 总6页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7506
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
12A
< 9.8mΩ
< 15.8 mΩ
Application
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3x3 EP
D
Top View
Top View
Bottom View
1
8
2
3
7
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
12
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
9.4
A
Pulsed Drain Current C
IDM
48
TA=25°C
TA=70°C
12
Continuous Drain
CurrentG
IDSM
A
10.5
Avalanche Current C
IAS
20
A
mJ
V
Avalanche energy L=0.05mH C
EAS
10
VDS Spike
100ns
VSPIKE
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
20.5
PD
W
Power Dissipation B
Power Dissipation A
8
3.1
2
PDSM
W
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
60
5
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
40
75
6
RθJA
Steady-State
Steady-State
RθJC
Rev0 : July 2012
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Page 1 of 6
AON7506
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=12A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.3
nA
V
VGS(th)
1.3
1.8
8
9.8
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
11
13.5
15.8
VGS=4.5V, ID=10A
VDS=5V, ID=12A
IS=1A,VGS=0V
13
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
45
0.73
1
V
Maximum Body-Diode Continuous Current G
12
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
542
233
31
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1
2
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9
12.2
5.8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
4.3
2.2
1.7
4
VGS=10V, VDS=15V, ID=12A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
3.5
18
3
ns
tD(off)
tf
ns
ns
trr
IF=12A, dI/dt=500A/µs
IF=12A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
9.7
ns
Qrr
nC
11.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : July 2012
www.aosmd.com
Page 2 of 6
AON7506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
10V
VDS=5V
4.5V
6V
4V
3.5V
125°C
25°C
VGS=3V
4
0
1
2
3
4
5
6
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
16
14
12
10
8
1.6
VGS=4.5V
VGS=10V
ID=12A
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=10A
6
4
0.8
0
3
6
9
12
15
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
25
20
15
10
5
1.0E+01
ID=12A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: July 2012
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Page 3 of 6
AON7506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=12A
8
Ciss
600
400
200
0
6
Coss
4
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
150
100
50
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
100ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: July 2012
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Page 4 of 6
AON7506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
30
25
20
15
10
5
0
0
0
25
50
75
100
125
150
0
25
50
TCASE (°C)
Figure 13: Current De-rating (Note F)
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note F)
10000
1000
100
10
TA=25°C
1
1E-05
0.001
0.1
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1000
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: July 2012
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Page 5 of 6
AON7506
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev0: July 2011
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Page 6 of 6
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