AON7462 [AOS]
300V,2.5A N-Channel MOSFET; 300V ， 2.5A N沟道MOSFET
| 型号： | AON7462 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 300V,2.5A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7462
300V,2.5A N-Channel MOSFET
General Description
Product Summary
The AON7462 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be adopted
quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
350V@150℃
2.5A
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.5Ω
100% UIS Tested!
100% Rg Tested!
DFN 3x3A_EP
Top View
Bottom View
D
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
300
±30
2.5
1.6
7.2
0.9
0.7
1.4
29
V
V
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current C
ID
TC=100°C
A
IDM
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy C
IDSM
A
IAR
A
EAR
EAS
dv/dt
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
58
5
mJ
V/ns
W
25
PD
Power Dissipation B
W
W
°C
TC=100°C
10
3.1
TA=25°C
PDSM
Power Dissipation A
TA=70°C
2
TJ, TSTG
Junction and Storage Temperature Range
-50 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Symbol
Typ
30
Max
40
75
5
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
60
RθJC
4.2
Rev0: Feb 2011
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Page 1 of 6
AON7462
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
300
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
350
0.3
V
BVDSS
V/ oC
ID=250µA, VGS=0V
/∆TJ
VDS=300V, VGS=0V
1
10
IDSS
µA
VDS=240V, TJ=125°C
IGSS
VGS(th)
RDS(ON)
gFS
V
DS=0V, VGS=±30V
±100
4.5
1.5
Gate-Body leakage current
Gate Threshold Voltage
nΑ
V
VDS=5V ID=250µA
3.5
4.2
1.2
1.5
0.8
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
V
GS=10V, ID=0.9A
DS=40V, ID=0.9A
Ω
S
VSD
IS=1A,VGS=0V
1
2.5
9
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
155
20
197
30
2
240
40
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.9
3.5
3.8
5.7
5.6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.6
1.3
1.5
17
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=240V, ID=0.9A
VGS=10V, VDS=150V, ID=0.9A,
8
RG=25Ω
tD(off)
tf
26
13
trr
IF=0.9A,dI/dt=100A/µs,VDS=100V
IF=0.9A,dI/dt=100A/µs,VDS=100V
62
95
125
0.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
0.14
0.22
µC
A. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
Dissipation PDSM is based on RθJA ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
t
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.4A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Feb 2011
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Page 2 of 6
AON7462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
10
-55°C
VDS=40V
10V
125°C
6.5V
1
6.0V
25°C
VGS=5.5V
0.1
0
5
10
15
DS (Volts)
20
25
2
4
6
VGS(Volts)
8
10
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
5.0
4.0
3.0
2.0
1.0
3
2.5
VGS=10V
ID=0.9A
VGS=10V
2
1.5
1
0.5
0
0
2
4
6
8
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
1.2
1.0E+00
1.1
1
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
0.2
0.4
0.6
0.8
1.0
-100
-50
0
50
100
150
200
TJ (oC)
VSD (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: Break Down vs. Junction Temperature
Rev 0: Feb 2011
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Page 3 of 6
AON7462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
1000
100
10
1
Ciss
VDS=240V
ID=0.9A
Coss
6
Crss
3
0
0
0
2
4
Q
6
8
10
0.1
1
10
100
VDS (Volts)
g (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
400
300
200
100
0
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
10
1
10µs
100µs
1ms
DC
10ms
0.1
0.01
0.1s
TJ(Max)=150°C
TC=25°C
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb 2011
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Page 4 of 6
AON7462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note B)
Figure 13: Current De-rating (Note B)
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
0.01
0.001
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 0: Feb 2011
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Page 5 of 6
AON7462
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching TestCircuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev 0: Feb 2011
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Page 6 of 6
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