APM9968C [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM9968C |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM9968C
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
•
20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V
RDS(ON)=20mΩ(typ.) @ VGS=2.5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
D
1
2
3
4
8
7
6
5
D
S1
S1
G1
S2
S2
G2
•
•
Reliable and Rugged
TSSOP-8
TSSOP-8 Packages
D
D
Applications
G 1
G 2
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
S 1 S 1
S 2 S 2
N-Channel MOSFET
•
Zener Diode Protected Gate Provide
Human Body Mode Electrostatic Discharge
Protection to 2500 V.
Ordering and Marking Information
APM9968C
Package Code
O : TSSOP-8
Temp. Range
C : -55 to 150 C
Handling Code
Handling Code
Temp. Range
Package Code
°
TR : Tape & Reel
APM9968C
XXXXX
APM9968C O :
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
1
www.anpec.com.tw
APM9968C
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
Parameter
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
20
±8
6
V
VGSS
*
ID
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
A
IDM
20
1
TA=25°C
TA=100°C
W
PD
Maximum Power Dissipation
0.4
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
80
°C
Thermal Resistance – Junction to Ambient
RθJA
*
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM9968C
Typ.
Symbol
Parameter
Test Condition
Unit
Min.
Max.
Static
Drain-Source Breakdown
Voltage
BVDSS
20
V
VGS=0V , IDS=250µA
Zero Gate Voltage Drain
Current
IDSS
VDS=16V , VGS=0V
1
µA
VGS(th) Gate Threshold Voltage
V
VDS=VGS , IDS=250µA
VGS=±8V , VDS=0V
VGS=4.5V , IDS=6A
0.6
0.7
1
IGSS
Gate Leakage Current
Drain-Source On-state
Resistance
±10
20
µA
16
20
a
RDS(ON)
mΩ
VGS=2.5V , IDS=5.2A
ISD=0.5A , VGS=0V
25
a
VSD
Diode Forward Voltage
V
0.7
1.3
Dynamicb
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDS=10V , IDS= 6A
VGS=4.5V ,
19
2
25
Qgs
nC
ns
Qgd
5
td(ON)
Tr
td(OFF)
Tf
37
33
100
54
68
62
VDD=10V , IDS=6A ,
VGEN=4.5V , RG=6Ω
182
100
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
2
www.anpec.com.tw
APM9968C
Electrical Characteristics Cont. (TA = 25°C unless otherwise noted)
APM9968C
Symbol
Parameter
Input Capacitance
Test Condition
VGS=0V
Unit
Min.
Typ.
1253
340
Max.
Ciss
Coss
Crss
Output Capacitance
VDS=15V
pF
Reverse Transfer Capacitance
260
Frequency=1.0MHz
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
3
www.anpec.com.tw
APM9968C
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
20
16
12
8
VGS=1.8,2,3,4,5,6,7,8,9,10V
16
12
VGS=1.5V
TJ=125°C
TJ=25°C
8
TJ=-55°C
4
4
VGS=1V
0
0
0
2
4
6
8
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.022
0.021
0.020
0.019
0.018
0.017
0.016
0.015
0.014
1.6
IDS=250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS=2.5V
VGS=4.5V
0
4
8
12
16
20
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
4
www.anpec.com.tw
APM9968C
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
1.8
0.044
VGS=4.5V
ID=6A
ID=6A
0.040
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0
1
2
3
4
5
6
7
8
-50 -25
0
25 50 75 100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
2500
2000
1500
1000
500
5
4
3
2
1
0
Frequency=1MHz
VDS=10V
ID=6A
Ciss
Coss
Crss
0
0
4
8
12
16
20
24
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
5
www.anpec.com.tw
APM9968C
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
20
60
48
36
24
12
0
10
TJ=150°C
TJ=25°C
1
0.1
0.0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
6
www.anpec.com.tw
APM9968C
Packaging Information
TSSOP-8
e
8 7
2 x E / 2
(
2)
E1
E
GAUGE
PLANE
S
1
2
e/2
0.25
L
D
1
A2
(L1)
A
( 3)
b
A1
Millimeters
Inches
Dim
Min.
Max.
1.2
0.15
1.05
0.30
Min.
Max.
0.047
0.006
0.041
0.012
A
A1
A2
b
0.00
0.80
0.19
0.000
0.031
0.007
D
e
E
2.9
3.1
0.114
0.122
0.65 BSC
6.40 BSC
0.026 BSC
0.252 BSC
E1
L
L1
4.30
0.45
4.50
0.75
0.169
0.018
0.177
0.030
1.0 REF
0.039REF
R
R1
S
0.09
0.09
0.2
0.004
0.004
0.008
1
2
φ
0
°
8
°
0
°
8
°
φ
12 REF
12 REF
°
°
3
φ
12 REF
12 REF
°
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
7
www.anpec.com.tw
APM9968C
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
°
183 C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183 C to Peak)
3 C/second max.
°
10 C /second max.
°
°
120 seconds max
60 – 150 seconds
10 –20 seconds
Preheat temperature 125 ± 25 C)
Temperature maintained above 183 C
°
°
60 seconds
Time within 5 C of actual peak temperature
°
Peak temperature range
Ramp-down rate
220 +5/-0 C or 235 +5/-0 C 215-219 C or 235 +5/-0 C
°
°
°
°
6 C /second max.
10 C /second max.
°
°
6 minutes max.
Time 25 C to peak temperature
°
Package Reflow Conditions
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 C
Convection 235 +5/-0 C
°
°
VPR 215-219 C
VPR 235 +5/-0 C
°
°
IR/Convection 220 +5/-0 C
IR/Convection 235 +5/-0 C
°
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
8
www.anpec.com.tw
APM9968C
Reliability test program
Test item
SOLDERABILITY
Method
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
HOLT
PCT
TST
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TSSOP-8
A
B
C
J
T1
2 + 0.5 12.4 ± 0.2 2 ± 0.2
Po P1 Ao
T2
W
P
E
12.75+
0.15
330 ± 1
62 +1.5
12± 0. 3
8± 0.1 1.75±0.1
Ko
F
D
D1
Bo
t
5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
9
www.anpec.com.tw
APM9968C
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TSSOP- 8
12
9.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
10
www.anpec.com.tw
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