APM9988COC-TRL [ANPEC]
Dual N-Channel Enhancement Mode MOSFET; 双N沟道增强型MOSFET
| 型号： | APM9988COC-TRL |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | Dual N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM9988CO
Dual N-Channel Enhancement Mode MOSFET
Pin Description
Features
·
20V/6A , RDS(ON)=16mW(typ.) @ VGS=4.5V
RDS(ON)=19mW(typ.) @ VGS=2.5V
Super HighDense Cell Design
·
·
·
Reliableand Rugged
Lead FreeAvailable (RoHSCompliant)
Top View of TSSOP - 8
(1)
D
(8)
D
Applications
·
Power Management, Portable Equipment and
Battery Powered Systems
(4)
G1
(5)
G2
S1
(2)
S1
(3)
S2 S2
(6) (7)
N-ChannelMOSFET
Ordering and Marking Information
Package Code
O : TSSOP-8
Operating Junction Temp. Range
APM9988C
Lead Free Code
°
Handling Code
Temp. Range
Package Code
C : -55 to 150 C
Handling Code
TU : Tube
Lead Free Code
TR : Tape & Reel
L : Lead Free Device Blank : Original Device
APM9988C
XXXXX
APM9988C O :
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
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Rev. B.1 - Sep., 2005
APM9988CO
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
Rating
20
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
±8
6
A
A
VGS=4.5V
20
IDM
*
m
300 s Pulsed Drain Current
IS*
TJ
Diode Continuous Forward Current
1.4
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
1.25
TA=25°C
W
*
PD
Maximum Power Dissipation
TA=100°C
0.5
*
JA
Rq
Thermal Resistance-Junction to Ambient
°C/W
100
Note:
*Surface Mounted on 1in2
£ 10sec.
pad area, t
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM9988CO
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
m
20
V
VGS=0V, IDS=250 A
VDS=16V, VGS=0V
1
IDSS Zero Gate Voltage Drain Current
m
A
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
0.5
0.7
1
V
m
VDS=VGS, IDS=250 A
VGS=±8V, VDS=0V
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=5.2A
ISD=0.5A, VGS=0V
±10
20
m
A
16
19
a
RDS(ON) Drain-Source On-state Resistance
W
m
25
a
VSD
Diode Forward Voltage
0.7
1.3
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
16.5
4.5
21
VDS=10V, VGS=4.5V,
IDS=6A
nC
4.5
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Rev. B.1 - Sep., 2005
APM9988CO
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM9988CO
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Dynamic Characteristics b
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
2
W
Input Capacitance
1155
200
90
VGS=0V,
VDS=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
7
14
19
86
45
W
VDD=10V, RL=10 ,
10
47
24
25
9
IDS=1A, VGEN=4.5V,
RG=6W
ns
td(OFF) Turn-off Delay Time
Tf
trr
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
m
ISD=6A, dISD/dt=100A/ s
Qrr
nC
Notes:
£
m
£
a : Pulse test ; pulse width 300 s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.
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Rev. B.1 - Sep., 2005
APM9988CO
Typical Characteristics
Power Dissipation
Drain Current
1.5
8
6
4
2
0
1.2
0.9
0.6
0.3
TA=25oC,VG=4.5V
TA=25oC
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
100
10
Duty = 0.5
300ms
0.2
0.1
0.05
1ms
0.1
0.01
1E-3
10ms
1
0.02
100ms
0.01
0.1
0.01
1s
DC
Single Pulse
Mounted on 1in2 pad
TA=25oC
0.1
R
qJA : 100 oC/W
0.01
1
10
100
1E-4 1E-3 0.01
0.1
1 10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
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Rev. B.1 - Sep., 2005
APM9988CO
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
24
22
20
18
16
14
12
10
VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V
18
16
14
12
10
8
VGS=2.5V
VGS=4.5V
1.5V
6
4
2
0
0.0
0
2
4
6
8
10 12 14 16 18 20
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
20
18
16
14
12
10
8
IDS =250mA
Tj=125oC
Tj=-55oC
Tj=25oC
6
4
2
0
0.0
-50 -25
0
25 50 75 100 125 150
0.4
0.8
1.2
1.6
2.0
2.4
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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Rev. B.1 - Sep., 2005
APM9988CO
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
10
1.6
VGS= 4.5V
ID = 6A
1.4
Tj=150oC
1.2
1.0
0.8
Tj=25oC
1
RON@Tj=25oC: 16mW
0.6
-50 -25
0.1
0.2
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5
4
3
2
1
0
2000
1750
1500
1250
1000
750
Frequency=1MHz
VDS=10V
IDS= 6A
Ciss
500
Coss
250
Crss
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Rev. B.1 - Sep., 2005
APM9988CO
Packaging Information
TSSOP-8
e
8
7
2 x E / 2
( 2)
E1
E
GAUGE
PLANE
S
1
2
e/2
0.25
L
D
1
A2
(L1)
A
( 3)
A1
b
Millimeters
Inches
Dim
Min.
Max.
1.2
Min.
Max.
0.047
0.006
0.041
0.012
0.122
A
A1
A2
b
0.00
0.80
0.19
2.9
0.15
1.05
0.30
3.1
0.000
0.031
0.007
0.114
D
e
0.65 BSC
6.40 BSC
0.026 BSC
0.252 BSC
E
E1
L
4.30
0.45
4.50
0.75
0.169
0.018
0.177
0.030
L1
R
1.0 REF
0.039REF
0.09
0.09
0.2
0.004
0.004
0.008
R1
S
f
°
°
°
°
8
1
0
8
0
f 2
f 3
12° REF
12° REF
12° REF
12° REF
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Rev. B.1 - Sep., 2005
APM9988CO
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
°
°
3 C/second max.
3 C/second max.
Preheat
°
°
150 C
100 C
-
-
-
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Time maintained above:
°
°
183 C
217 C
-
Temperature (TL)
Time (tL)
60-150 seconds
60-150 seconds
-
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Rev. B.1 - Sep., 2005
APM9988CO
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
³ 2.5 mm
240 +0/-5°C
225 +0/-5°C
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
1.6 mm – 2.5 mm
³ 2.5 mm
260 +0°C*
260 +0°C*
250 +0°C*
260 +0°C*
250 +0°C*
245 +0°C*
260 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
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Rev. B.1 - Sep., 2005
APM9988CO
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
TSSOP-8
A
B
C
J
T1
2 + 0.5 12.4 ± 0.2 2 ± 0.2
Po P1 Ao
T2
W
P
E
12.75+
0.15
330 ± 1
62 +1.5
12± 0. 3
8± 0.1
1.75±0.1
F
D
D1
Bo
Ko
t
5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
TSSOP- 8
Carrier Width
Cover Tape Width
Devices Per Reel
12
9.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
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