APM9953KC-TUL [ANPEC]
Dual P-Channel Enhancement Mode MOSFET; 双P沟道增强型MOSFET
| 型号： | APM9953KC-TUL |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | Dual P-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM9953K
Dual P-Channel Enhancement Mode MOSFET
Pin Description
Features
D1
D1
D2
•
-20V/-3A ,
D2
RDS(ON)=76mΩ(typ.) @ VGS=-10V
RDS(ON)=93mΩ(typ.) @ VGS=-4.5V
S1
G1
•
Super High Dense Cell Design
S2
G2
•
•
Reliable and Rugged
Top View of SOP − 8
Lead Free Available (RoHS Compliant)
(1)
S1
(3)
S2
Applications
(2)
G1
(4)
G2
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D1 D1
(7) (8)
D2 D2
(5) (6)
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
APM9953
Lead Free Code
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
Temp. Range
Package Code
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM9953
XXXXX
APM9953 K :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw
APM9953K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
Rating
-20
±10
-3
Unit
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
A
A
VGS=-10V
-12
-1
IDM
*
300µs Pulsed Drain Current
IS*
TJ
Diode Continuous Forward Current
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
TA=25°C
2
W
PD*
Maximum Power Dissipation
TA=100°C
0.8
RθJA
*
Thermal Resistance-Junction to Ambient
62.5
°C/W
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM9953
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-20
V
VGS=0V, IDS=-250µA
VDS=-16V, VGS=0V
-1
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
-0.5
-0.7
-1
V
VDS=VGS, IDS=-250µA
VGS=±10V, VDS=0V
VGS=-10V, IDS=-3A
VGS=-4.5V, IDS=-2A
ISD=-0.5A, VGS=0V
±100
100
125
-1.3
nA
76
93
a
RDS(ON) Drain-Source On-state Resistance
mΩ
a
VSD
Diode Forward Voltage
-0.7
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5.3
1.1
0.7
7
VDS=-10V, VGS=-4.5V,
IDS=-3A
nC
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
APM9953K
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM9953
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Dynamic Characteristics b
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
10.5
550
120
75
Ω
Input Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
13
36
45
37
21.5
56
Ω
V
DD=-10V, RL=10 ,
IDS=-1A, VGEN=-4.5V,
ns
td(OFF) Turn-off Delay Time
69.5
57.5
Ω
RG=6
Tf
Turn-off Fall Time
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
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APM9953K
Typical Characteristics
Power Dissipation
Drain Current
2.5
4
3
2
1
0
2.0
1.5
1.0
0.5
TA=25oC,VG=-10V
TA=25oC
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
50
10
Duty = 0.5
1ms
0.2
0.1
10ms
0.1
0.01
1E-3
0.05
0.02
1
0.1
100ms
1s
0.01
DC
Single Pulse
Mounted on 1in2 pad
TA=25oC
R
θJA : 62.5 oC/W
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1 10 30
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
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APM9953K
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
12
120
110
100
90
VGS= -3, -4, -5, -6, -7, -8, -9, -10V
10
8
VGS= -4.5V
-2V
6
VGS= -10V
80
4
70
-1.5V
2
60
-1V
50
0
0
2
4
6
8
10
12
0
2
4
6
8
10
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS = -250µA
Tj=125oC
Tj=25oC
6
Tj=-55oC
4
2
0
-50 -25
0
25 50 75 100 125 150
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
-VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
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APM9953K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
10
VGS = -10V
IDS = -3A
1.6
Tj=150oC
1.4
1.2
1.0
0.8
0.6
Tj=25oC
1
RON@Tj=25oC: 76mΩ
0.4
-50 -25
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
800
640
480
320
160
0
5
4
3
2
1
0
Frequency=1MHz
VDS= -10V
I
DS= -3A
Ciss
Coss
Crss
0
4
8
12
16
20
0
1
2
3
4
5
6
QG - Gate Charge (nC)
-VDS - Drain-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
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APM9953K
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1
e2
D
A1
A
1
L
0.004max.
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
0.069
0.010
0.197
0.157
0.244
0.050
0.020
A
A1
D
1.35
0.10
4.80
3.80
5.80
0.40
0.33
1.75
0.25
5.00
4.00
6.20
1.27
0.51
0.053
0.004
0.189
0.150
0.228
0.016
0.013
E
H
L
e1
e2
1.27BSC
0.50BSC
1
8
8
°
φ
°
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
7
www.anpec.com.tw
APM9953K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Tim e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
Preheat
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
183°C
60-150 seconds
217°C
60-150 seconds
- Time (tL)
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
Time within 5°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
8
www.anpec.com.tw
APM9953K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
≥350
<2.5 mm
≥2.5 mm
240 +0/-5°C
225 +0/-5°C
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
260 +0°C*
260 +0°C*
250 +0°C*
260 +0°C*
250 +0°C*
245 +0°C*
260 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
9
www.anpec.com.tw
APM9953K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
A
B
C
J
T1
T2
W
12 + 0.3
- 0.1
P
E
Application
SOP-8
12.75 +
0.1 5
2 + 0.5 12.4 +0.2
330±1
62 ± 1.5
2± 0.2
8± 0.1 1.75± 0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
1.55+ 0.25
5.5 ± 0.1 1.55±0.1
4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
Cover Tape Width
Devices Per Reel
12
9.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
10
www.anpec.com.tw
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