AS1334-BTDT-33_技术文档

Datasheet

AS1334

650mA, Ultra low Ripple Step Down DC/DC Converter

1 General Description

2 Key Features

ꢀ

Output Voltage Ripple: 2mV

The AS1334 is a step-down DC-DC converter designed

to power portable applications from a single Li-Ion

battery. The device also achieves high-performance in

mobile phones and other applications requiring low

dropout voltage.

PWM Switching Frequency: 2MHz

Single Lithium-Ion Cell Operation

Output Voltage Range: 1.2V to 3.4V

(available in 100mV steps, see Ordering Information

on page 16)

The AS1334 operates from an input voltage range of 2.7

to 5.5V while providing output voltages of 1.2, 1.5, 1.8,

2.5, 3.0 and 3.3V.

ꢀ

Fixed Output Voltages:

- 1.2V, 1.5V, 1.8V, 2.5V, 3.0V, 3.3V

Fixed-frequency PWM operation minimizes RF

interference. Shutdown function turns the device off and

reduces battery consumption to 0.01µA (typ.).

ꢀ

Maximum Load Capability of 650mA

97% High Efficiency, 94% Average Efficiency

Current Overload Protection

Thermal Overload Protection

Power-OK

The AS1334 is available in a TDFN(3x3) 8-pin package.

A high switching frequency (2 MHz) allows use of tiny

surface-mount components. Only three small external

surface-mount components, an inductor and two

ceramic capacitors are required.

Soft Start

Low Dropout Voltage (140 mΩ Typ PFET)

TDFN(3x3) 8-pin

3 Applications

The AS1334 is an ideal solution to supply noise

sensitive applications as cellular phones, hand-held

radios, RF PC cards, battery powered RF devices, RFID

chipsets, A/D Converter, Sensors and OpAmps.

Figure 1. AS1334 - Typical Application Circuit

3.3 µH

PVIN

SW

VIN

VOUT

10 µF

VDD

FB

AS1334

10 µF

EN

ON

POK

OFF

SGND

PGND

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AS1334

Datasheet - Pin Assignments

4 Pin Assignments

Figure 2. Pin Configuration

FB

POK

EN

1

2

3

4

8

7

6

5

PGND

SW

AS1334

PVIN

SGND

9

VDD

Pin Descriptions

Table 1. Pin Descriptions

Pin Name

Pin Number

Description

1

Feedback Pin. Connect to the output at the output filter capacitor.

FB

Power-OK.

2

0 = VOUT < 90% of VOUTNOM.

POK

1 = VOUT > 90% of VOUTNOM.

Enable Input. Set this digital input high for normal operation. For shutdown,

set low.

3

EN

+2.7V to +5.5V Power Supply Voltage. Analog Supply Input.

4

5, 9

6

VDD

SGND

PVIN

Analog and Control Ground.

+2.7V to +5.5V Power Supply Voltage. Input to the internal PFET switch.

Switch Pin. Switch node connection to the internal PFET switch and NFET

synchronous rectifier. Connect to an inductor with a saturation current rating

that exceeds the maximum switch peak current limit specification of the

AS1334.

SW

7

8

Power Ground.

PGND

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AS1334

Datasheet - Absolute Maximum Ratings

5 Absolute Maximum Ratings

Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated in Electrical

Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

Table 2. Absolute Maximum Ratings

Parameter

VDD, PVIN to SGND

PGND to SGND

POK, EN, FB

Min

-0.3

Max

+7.0

+0.3

Units

V

Notes

V

SGND - 0.3 VDD + 0.3

PGND - 0.3 PVIN + 0.3

V

7.0V max

SW

V

PVIN to VDD

-0.3

-40

+0.3

+85

V

Operating Temperature Range

°C

ºC

Junction Temperature (T_J-MAX

)

+150

Storage Temperature Range

-65

Maximum Lead Temperature

(Soldering, 10 sec)

+260

ºC

ESD Rating

Human Body Model

Operating Ratings

2

kV

HBM MIL-Std. 883E 3015.7 methods

Input Voltage Range

2.7

-40

5.5

650

V

Recommended Load Current

mA

ºC

Junction Temperature (T_J) Range

+125

In applications where high power

dissipation and/or poor package thermal

resistance is present, the maximum

ambient temperature may have to be

derated.

Maximum ambient temperature (T_A-MAX

is dependent on the maximum operating

junction temperature (T_J-MAX-OP

125ºC), the maximum power dissipation

of the device in the application (P_D-MAX),

and the junction-to ambient thermal

resistance of the part/package in the

application (θ_JA), as given by the

following

)

=

Ambient Temperature (T_A) Range

-40

+85

ºC

equation: T_A-MAX= T_J-MAX-OP– (θ_JA

×

P_D-MAX).

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AS1334

Datasheet - Electrical Characteristics

6 Electrical Characteristics

TA = T_J= -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted

. Typ. values are at TA=25°C.

Table 3. Electrical Characteristics

Symbol

Parameter

Conditions

Min

Typ Max Units

1.176 1.2 1.224

V

1.47

1.5

1.53

1.764 1.8 1.836

V_OUT

Output Voltage

PVIN = 3.6V

2.45

2.94

2.5

3.0

2.55

3.06

3.234 3.3 3.366

EN = SW = 0V¹

I_SHDN

I_Q

Shutdown supply current

DC bias current into VDD

0.01

2

µA

FB = 0V, No Switching²

1

1.4

mA

I

_SW= 200mA; TA = +25°C

_SW= 200mA

140

200

230

415

485

R_DSON(P)Pin-Pin Resistance for PFET

R_DSON(N)Pin-Pin Resistance for NFET

mΩ

I_SW= -200mA; TA = +25°C

I_SW= -200mA

300

I_LIM,PFETSwitch peak current limit

935 1100 1200 mA

POK Output

POK Output Low Voltage

POK sinking 0.1mA

VOL

0.05

90

0.2

500

93

V

nA

%

POK Output High Leakage Current POK = 3.6V

POK Threshold Rising edge, referenced to VOUT(NOM)

Enable Input

V_IH,EN

Logic high input threshold

V_IL,EN

87

1.2

V

Logic low input threshold

Pin pull down current

0.5

10

I_PIN,ENABLE

Oscillator

F_OSC

5

2

µA

Internal oscillator frequency

1.8

2.2 MHz

1. Shutdown current includes leakage current of PFET.

2. I_Qspecified here is when the part is operating at 100% duty cycle.

System Characteristics

T_A= 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted

. The following parameters are verified by characterisation

and are not production tested

.

Table 4. System Characteristics

Symbol

Parameter

Conditions

Min Typ Max Units

EN = Low to High, VIN = 4.2V, C_OUT

10µF, I_OUT≤ 1mA

=

Turn on time (from Enable low to

high transition)

T_{_ON}

210 350

µs

Efficiency (L = 3.3µH, DCR ≤

100mΩ)

VIN = 3.6V, I_OUT= 400mA

η

96

5

%

Ripple voltage, PWM mode¹

VIN = 4.2V, I_OUT= 10mA to 400mA

VOUT_ripple

mVp-p

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AS1334

Datasheet - Electrical Characteristics

Table 4. System Characteristics

Symbol

Parameter

Conditions

Min Typ Max Units

VIN = 600mV perturbance, over Vin

range 3.4V to 5.5V; T_RISE= T_FALL

10µs, VOUT = 3.0V, I_OUT= 100mA

=

Line transient response

Line_tr

50

mVpk

VIN = 4.2V, VOUT = 3.0V, transients up

to 100mA, T_RISE= T_FALL= 10µs

Load transient response

Load_tr

1. Ripple voltage should measured at C_OUTelectrode on good layout PC board and under condition using sug-

gested inductors and capacitors.

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AS1334

Datasheet - Typical Operating Characteristics

7 Typical Operating Characteristics

Circuit in Figure 23 on page 11, PVIN = VDD = EN = 3.6V, L = 3.3µH (LPS4018-332ML_), CIN = COUT = 10µF

(GRM21BR61C106KA01) unless otherwise noted;

Figure 3. Quiescent Current vs. VIN

Figure 4. Shutdown Current vs. Temperature

0.55

0.3

Vin=3.25V

Vin=3.6V

0.25

Vin=4.2V

Vin=5.5V

0.5

0.45

0.4

0.2

0.15

0.1

0.05

0

- 45°C

+ 25°C

+ 85°C

0.35

2.5

3

3.5

4

4.5

5

5.5

-40

-15

10

35

60

85

Supply Voltage (V)

Temperature (°C)

Figure 5. Switching Frequency Variation vs. Temp.

Figure 6. Output Voltage vs. Supply Voltage

4

3.06

3

2

3.04

3.02

3

1

0

-1

2.98

-2

Vin=3.6V

Iout=50mA

2.96

Vin=4.2V

Iout=300mA

Iout=650mA

-3

Vin=5.5V

-4

2.94

-40

-15

10

35

60

85

3.25

3.75

4.25

4.75

5.25

Temperature (°C)

Supply Voltage (V)

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AS1334

Datasheet - Typical Operating Characteristics

Figure 7. Output Voltage vs. Temperature

Figure 8. Efficiency vs. Output Current

3.06

100

3.04

3.02

3

95

90

85

80

75

70

Vi n=3.25V

Vi n=3.6V

Vi n=3.9V

Vi n=4.2V

Vi n=4.5V

Vi n=5.5V

2.98

Iout=50mA

2.96

Iout=300mA

Iout=650mA

2.94

-40

-15

10

35

60

85

0

100 200 300 400 500 600 700

Output Current (mA)

Temperature (°C)

Figure 9. Switch Peak Current Limit vs. Temperature;

closed loop

Figure 10. Load Transient Response; VOUT = 3.0V,

VIN = 4.2V

1.2

1.15

1.1

1.05

Vin=2.7V

Vin=3.6V

Vin=5.5V

1

-40

-15

10

35

60

85

10µs/Div

Temperature (°C)

Figure 11. Startup; VIN = 3.6V, VOUT = 3.0V,

Figure 12. Startup; VIN = 4.2V, VOUT = 3.0V,

IOUT<1mA, RLOAD=3.3kΩ

50µs/Div

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AS1334

Datasheet - Typical Operating Characteristics

Figure 13. Shutdown Response; VIN=3.6V,

Figure 14. Shutdown Response; VIN=4.2V,

VOUT=3.0V, RLOAD=5Ω

50µs/Div

Figure 15. Line Transient Response; VIN=3.3V to

3.9V, IOUT=100mA, VOUT=3.0V

Figure 16. Timed Current Limit Response;

VIN = 3.6V, VOUT=3.0V

50µs/Div

10µs/Div

Figure 17. Output Voltage Ripple;

VOUT = 3.0V, IOUT = 200mA

Figure 18. VOUT Ripple in Skip Mode; VIN=3.31V,

VOUT=3.0V, RLOAD=5Ω

200ns/Div

1µs/Div

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AS1334

Datasheet - Typical Operating Characteristics

Figure 19. RDSON (P-Chanel) vs. Temp.; ISW=200mA

Figure 20. RDSON (N-Chanel) vs. Temp.; ISW=-200mA

350

300

250

200

150

300

250

200

150

100

Vin=2.7V

50

Vin=3.6V

Vin=5.5V

0

-40

-15

10

35

60

85

-40

-15

10

35

60

85

Temperature (°C)

Figure 21. EN High Threshold vs. VIN

1.2

1.15

1.1

1.05

1

0.95

0.9

- 45°C

+25°C

+90°C

0.85

0.8

2.5

3

3.5

4

4.5

5

5.5

Supply Voltage (V)

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AS1334

Datasheet - Detailed Description

8 Detailed Description

The AS1334 is a simple, step-down DC-DC converter optimized for powering portable applications that require low

dropout voltages such as mobile phones, portable communicators, and similar battery powered RFID devices. Besides

being packed with numerous features like current overload protection, thermal overload shutdown and soft start,

AS1334 displays the following characteristics:

ꢀ

Its operation is based on current-mode buck architecture with synchronous rectification for high efficiency.

ꢀ

Allows the application to operate at maximum efficiency over a wide range of power levels from a single Li-Ion bat-

tery cell.

ꢀ

Provides for a maximum load capability of 650mA in PWM mode, wherein the maximum load range may vary

depending on input voltage, output voltage and the selected inductor.

Is ranked at an efficiency of around 96% for a 400mA load with a 3.6V input voltage.

Figure 22. AS1334 - Functional Block Diagram

PVIN

POK

VDD

1.13V

–

+

Oscillator

Current

Sense

FB

Mosfet

Control

Logic

SW

Soft Start

Main Control

EN

Shutdown

Control

AS1334

SGND

PGND

The size of the external components is reduced by using a high switching frequency (2MHz). Figure 1 on page 1

demonstrates that only three external power components are required for implementation. Also, the system controller

should set EN low during power-up and other low supply voltage conditions. See Shutdown Mode on page 12.

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AS1334

Datasheet - Detailed Description

Figure 23. Typical Operating System Circuit

3.3 µH

PVIN

SW

FB

VIN

VOUT

2.7V to 5.5V

10 µF

VDD

EN

AS1334

10 µF

System

Controller

POK

ON/OFF

SGND

PGND

Operating the AS1334

AS1334’s control block turns on the internal PFET (P-channel MOSFET) switch during the first part of each switching

cycle, thus allowing current to flow from the input through the inductor to the output filter capacitor and load. The

inductor limits the current to a ramp with a slope of around (VIN - VOUT) / L, by storing energy in a magnetic field.

During the second part of each cycle, the controller turns the PFET switch off, blocking current flow from the input, and

then turns the NFET (N-channel MOSFET) synchronous rectifier on. As a result, the inductor’s magnetic field

collapses, generating a voltage that forces current from ground through the synchronous rectifier to the output filter

capacitor and load.

While the stored energy is transferred back into the circuit and depleted, the inductor current ramps down with a slope

around VOUT / L. The output filter capacitor stores charge when the inductor current is high, and releases it when low,

smoothing the voltage across the load. The output voltage is regulated by modulating the PFET switch on time to

control the average current sent to the load. The effect is identical to sending a duty-cycle modulated rectangular wave

formed by the switch and synchronous rectifier at SW to a low-pass filter formed by the inductor and output filter

capacitor.

The output voltage is equal to the average voltage at the SW pin.

While in operation, the output voltage is regulated by switching at a constant frequency and then modulating the

energy per cycle to control power to the load. Energy per cycle is set by modulating the PFET switch on-time pulse

width to control the peak inductor current. This is done by comparing the signal from the current-sense amplifier with a

slope compensated error signal from the voltage-feedback error amplifier. At the beginning of each cycle, the clock

turns on the PFET switch, causing the inductor current to ramp up. When the current sense signal ramps past the error

amplifier signal, the PWM comparator turns off the PFET switch and turns on the NFET synchronous rectifier, ending

the first part of the cycle.

If an increase in load pulls the output down, the error amplifier output increases, which allows the inductor current to

ramp higher before the comparator turns off the PFET. This increases the average current sent to the output and

adjusts for the increase in the load. Before appearing at the PWM comparator, a slope compensation ramp from the

oscillator is subtracted from the error signal for stability of the current feedback loop. The minimum on time of PFET in

PWM mode is 50ns (typ.)

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AS1334

Datasheet - Detailed Description

Internal Synchronous Rectifier

To reduce the rectifier forward voltage drop and the associated power loss, the AS1334 uses an internal NFET as a

synchronous rectifier. The big advantage of a synchronous rectification is the higher efficiency in a condition where the

output voltage is low compared to the voltage drop across an ordinary rectifier diode. During the inductor current down

slope in the second part of each cycle the synchronous rectifier is turned on. Before the next cycle the synchronous

rectifier is turned off.

There is no need for an external diode because the NFET is conducting through its intrinsic body diode during the

transient intervals before it turns on.

Power-OK

The POK output indicates if the output voltage is within 90% of the nominal voltage level. As long as the output voltage

is within regulation the open-drain POK output sinks current.

Shutdown Mode

If EN is set to high (>1.2V) the AS1334 is in normal operation mode. During power-up and when the power supply is

less than 2.7V minimum operating voltage, the chip should be turned off by setting EN low. In shutdown mode the

following blocks of the AS1334 are turned off, PFET switch, NFET synchronous rectifier, reference voltage source,

control and bias circuitry. The AS1334 is designed for compact portable applications, such as mobile phones where the

system controller controls operation mode for maximizing battery life and requirements for small package size

outweigh the additional size required for inclusion of UVLO (Under Voltage Lock-Out) circuitry.

Note: Setting the EN digital pin low (<0.5V) places the AS1334 in a 0.01µA (typ.) shutdown mode.

Thermal Overload Protection

To prevent the AS1334 from short-term misuse and overload conditions the chip includes a thermal overload

protection. To block the normal operation mode the device is turning the PFET and the NFET off in PWM mode as

soon as the junction temperature exceeds 150°C. To resume the normal operation the temperature has to drop below

140°C.

Note: Continuing operation in thermal overload conditions may damage the device and is considered bad practice.

Current Limiting For Protection

If in the PWM mode the cycle-by-cycle current limit of 1200mA (max.) is reached the current limit feature takes place

and protects the device and the external components. A timed current limiting mode is working when a load pulls the

output voltage down to approximately 0.375V. In this timed current limit mode the inductor current is forced to ramp

down to a safe value. This is achived by turning off the internal PFET switch and delaying the start of the next cycle for

3.5us. The synchronous rectifier is also turned off in the timed current limit mode.

The advantage of the timed current limit mode is to prevent the device from the loss of the current control.

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AS1334

Datasheet - Application Information

9 Application Information

Inductor Selection

For the external inductor, a 3.3µH inductor is recommended. Minimum inductor size is dependant on the desired effi-

ciency and output current. Inductors with low core losses and small DCR at 2MHz are recommended.

Table 5. Recommended Inductor

Part Number

L

DCR

Current Rating Dimensions (L/W/T)

Manufacturer

Coilcraft

www.coilcraft.com

LPS4018-222ML_

LPS4018-332ML_

LPS4018-472ML_

2.2µH

3.3µH

4.7µH

0.070Ω

0.080Ω

0.125Ω

2.9A

2.4A

1.9A

3.9x3.9x1.7mm

Capacitor Selection

A 10µF capacitor is recommended for CIN as well as a 10µF for COUT. Small-sized X5R or X7R ceramic capacitors are

recommended as they retain capacitance over wide ranges of voltages and temperatures.

Input and Output Capacitor Selection

Low ESR input capacitors reduce input switching noise and reduce the peak current drawn from the battery. Also low

ESR capacitors should be used to minimize VOUT ripple. Multi-layer ceramic capacitors are recommended since they

have extremely low ESR and are available in small footprints.

For input decoupling the ceramic capacitor should be located as close to the device as practical. A 4.7µF input capaci-

tor is sufficient for most applications. Larger values may be used without limitations.

A 2.2µF to 10µF output ceramic capacitor is sufficient for most applications. Larger values up to 22µF may be used to

obtain extremely low output voltage ripple and improve transient response.

Table 6. Recommended Input and Output Capacitor

Part Number

C

TC Code Rated Voltage Dimensions (L/W/T)

Manufacturer

Murata

www.murata.com

GRM188R60J475KE19

GRM219R60J475KE19

GRM21BR61C475KA88

GRM31CR71E475KA88

GRM188R60J106ME47

GRM21BR60J106KE19

GRM21BR61A106KE19

GRM32DR71C106KA01

GRM21BR60J226ME39

GRM32ER71A226KE20

4.7µF

10µF

22µF

X5R

X7R

X5R

X7R

X5R

X7R

6.3V

16V

25V

6.3V

10V

16V

6.3V

10V

0603

0805

1206

0603

0805

1210

0805

1210

EN Pin Control

Drive the EN pin using the system controller to turn the AS1334 ON and OFF. Use a comparator, Schmidt trigger or

logic gate to drive the EN pin. Set EN high (>1.2V) for normal operation and low (<0.5V) for a 0.01µA (typ.) shutdown

mode. Set EN low to turn off the AS1334 during power-up and under voltage conditions when the power supply is less

than the 2.7V minimum operating voltage. The part is out of regulation when the input voltage is less than 2.7V.

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AS1334

Datasheet - Application Information

Layout Considerations

The AS1334 converts higher input voltage to lower output voltage with high efficiency. This is achieved with an

inductorbased switching topology. During the first half of the switching cycle, the internal PMOS switch turns on, the

input voltage is applied to the inductor, and the current flows from PVDD line to the output capacitor (C2) through the

inductor. During the second half cycle, the PMOS turns off and the internal NMOS turns on. The inductor current

continues to flow via the inductor from the device PGND line to the output capacitor (C2). Referring to Figure 24, the

AS1334 has two major current loops where pulse and ripple current flow. The loop shown in the left hand side is most

important, because pulse current shown in Figure 24 flows in this path. The right hand side is next. The current

waveform in this path is triangular, as shown in Figure 24. Pulse current has many high-frequency components due to

fast di/dt. Triangular ripple current also has wide high-frequency components. Board layout and circuit pattern design

of these two loops are the key factors for reducing noise radiation and stable operation. Other lines, such as from

battery to C1(+) and C2(+) to load, are almost DC current, so it is not necessary to take so much care. Only pattern

width (current capability) and DCR drop considerations are needed.

Figure 24. Current Loop

VIN

3.25V to 5.5V

i

fOSC = 2MHz

i

+

VDD

C1

- 10 µF

PVIN

L1

3.3 µH

VOUT

SW

FB

EN

C2

+

-

10 µF

SGND

PGND

POK

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AS1334

Datasheet - Package Drawings and Markings

10 Package Drawings and Markings

The devices are available in a TDFN(3x3) 8-pin package.

Figure 25. TDFN(3x3) 8-pin Package

D2

D

SEE

D2/2

DETAIL B

B

L

PIN 1 INDEX AREA

(D/2 xE/2)

K

B

N N-1

b

PIN 1 INDEX AREA

(D/2 xE/2)

aaa

C

2x

e

bbb

C

C A

TOP VIEW

(ND-1) X e

BTM VIEW

ddd

e

Terminal Tip

DETAIL B

e/2

ccc

C

SEATING

PLANE

0.08

SIDE VIEW

Datum A or B

EVEN TERMINAL SIDE

Symbol

A

Min

0.70

0.00

Typ

0.75

Max

0.80

0.05

Notes

1, 2

Symbol

Min

Typ

3.00

Max

Notes

1, 2

D BSC

A1

0.02

E BSC

1, 2

A3

0.20 REF

D2

E2

L

1.60

1.35

0.30

0º

2.50

1.75

0.50

14º

1, 2

L1

0.03

0.15

0.13

1, 2

L2

0.40

1, 2

aaa

bbb

ccc

ddd

eee

ggg

0.15

0.10

0.05

0.08

0.10

θ

K

1, 2

0.20

0.18

1, 2

b

0.25

0.65

8

0.30

1, 2, 5

e

N

1, 2

ND

4

1, 2, 5

Notes:

1. Figure 25 is shown for illustration only.

2. All dimensions are in millimeters; angles in degrees.

3. Dimensioning and tolerancing conform to ASME Y14.5 M-1994.

4. N is the total number of terminals.

5. The terminal #1 identifier and terminal numbering convention shall conform to JEDEC 95-1, SPP-012. Details of ter-

minal #1 identifier are optional, but must be located within the zone indicated. The terminal #1 identifier may be either

a mold or marked feature.

6. Dimension b applies to metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip.

7. ND refers to the maximum number of terminals on side D.

8. Unilateral coplanarity zone applies to the exposed heat sink slug as well as the terminals

www.austriamicrosystems.com

Revision 1.04

15 - 17

AS1334

Datasheet - Ordering Information

11 Ordering Information

The device is available as the standard products shown in Table 7.

Table 7. Ordering Information

Ordering Code

Marking Output

Description

Delivery Form

Package

650mA, Ultra low Ripple Step Down

DC/DC Converter

AS1334-BTDT-12

Tape and Reel TDFN(3x3) 8-pin

ASR2

ASR3

ASR4

ASR5

ASQY

ASR6

xxxx

1.2V

1.5V

1.8V

2.5V

3.0V

3.3V

xxxx

650mA, Ultra low Ripple Step Down

DC/DC Converter

AS1334-BTDT-15

AS1334-BTDT-18

AS1334-BTDT-25

AS1334-BTDT-30

AS1334-BTDT-33

650mA, Ultra low Ripple Step Down

DC/DC Converter

650mA, Ultra low Ripple Step Down

DC/DC Converter

650mA, Ultra low Ripple Step Down

DC/DC Converter

650mA, Ultra low Ripple Step Down

DC/DC Converter

650mA, Ultra low Ripple Step Down

DC/DC Converter

AS1334-BTDT-xx¹

1. Non-standard devices are available between 1.2V and 3.4V in 100mV steps. For more information and inquiries

contact http://www.austriamicrosystems.com/contact

Note: All products are RoHS compliant and Pb-free.

Buy our products or get free samples online at ICdirect: http://www.austriamicrosystems.com/ICdirect

For further information and requests, please contact us mailto:sales@austriamicrosystems.com

or find your local distributor at http://www.austriamicrosystems.com/distributor

www.austriamicrosystems.com

Revision 1.04

16 - 17

AS1334

Datasheet

Copyrights

translated, stored, or used without the prior written consent of the copyright owner.

All products and companies mentioned are trademarks or registered trademarks of their respective companies.

Disclaimer

Devices sold by austriamicrosystems AG are covered by the warranty and patent indemnification provisions appearing

in its Term of Sale. austriamicrosystems AG makes no warranty, express, statutory, implied, or by description regarding

the information set forth herein or regarding the freedom of the described devices from patent infringement.

austriamicrosystems AG reserves the right to change specifications and prices at any time and without notice.

Therefore, prior to designing this product into a system, it is necessary to check with austriamicrosystems AG for

current information. This product is intended for use in normal commercial applications. Applications requiring

extended temperature range, unusual environmental requirements, or high reliability applications, such as military,

medical life-support or life-sustaining equipment are specifically not recommended without additional processing by

austriamicrosystems AG for each application. For shipments of less than 100 parts the manufacturing flow might show

deviations from the standard production flow, such as test flow or test location.

The information furnished here by austriamicrosystems AG is believed to be correct and accurate. However,

austriamicrosystems AG shall not be liable to recipient or any third party for any damages, including but not limited to

personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or

consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the tech-

nical data herein. No obligation or liability to recipient or any third party shall arise or flow out of

austriamicrosystems AG rendering of technical or other services.

Contact Information

Headquarters

austriamicrosystems AG

Tobelbaderstrasse 30

A-8141 Unterpremstaetten, Austria

Tel: +43 (0) 3136 500 0

Fax: +43 (0) 3136 525 01

For Sales Offices, Distributors and Representatives, please visit:

http://www.austriamicrosystems.com/contact

www.austriamicrosystems.com

Revision 1.04

17 - 17


型号：	AS1334-BTDT-33
厂家：	AMS(艾迈斯)
描述：	650mA, Ultra low Ripple Step Down DC/DC Converter 650毫安，超低纹波降压DC / DC转换器转换器
文件：	总17页 (文件大小：1733K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AS1334-BTDT-33 [AMSCO]

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