A29L004TY-70 [AMICC]
Flash, 512KX8, 70ns, PDSO32, 8 X 14 MM, STSOP1-32;型号: | A29L004TY-70 |
厂家: | AMIC TECHNOLOGY |
描述: | Flash, 512KX8, 70ns, PDSO32, 8 X 14 MM, STSOP1-32 光电二极管 |
文件: | 总40页 (文件大小:519K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A29L004 Series
512K X 8 Bit CMOS 3.0 Volt-only,
Boot Sector Flash Memory
Document Title
512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
Revision History
Rev. History
Issue Date
Remark
Preliminary
Final
0.0
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Initial issue
October 30, 2002
October 7, 2003
February 23, 2004
June 8, 2004
Final version release
Modify typical sector erase time from 0.7sec. to 1sec.
Change 32L sTSOP body size from 8x14mm to 8x13.4mm
Add Pb-Free package type
July 28, 2004
Add 32L sTSOP 8x14mm package type & erase/program time modification
Add IR Reflow Condition of Pb Free Type
Add DIP 32 package type
March 16, 2005
June 17, 2005
February 6, 2007
November 24, 2010
Page 1: Change from typical 100,000 cycles to minimum 100,000 cycles
(November, 2010, Version 1.7)
AMIC Technology, Corp.
A29L004 Series
512K X 8 Bit CMOS 3.0 Volt-only,
Boot Sector Flash Memory
Features
Single power supply operation
- Embedded Program algorithm automatically writes and
verifies data at specified addresses
Minimum 100,000 program/erase cycles per sector
20-year data retention at 125°C
- Reliable operation for the life of the system
Compatible with JEDEC-standards
- Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
- Regulated voltage range: 3.0 to 3.6 volt read and write
operations for compatibility with high performance 3.3
volt microprocessors
Access times:
- Pinout and software compatible with single-power-supply
Flash memory standard
- 70/90 (max.)
Current:
- Superior inadvertent write protection
- 4 mA typical active read current
- 20 mA typical program/erase current
- 200 nA typical CMOS standby
Polling and toggle bits
- Provides a software method of detecting completion of
program or erase operations
Data
- 200 nA Automatic Sleep Mode current
Flexible sector architecture
Ready /
pin (RY /
)
BY
BUSY
- Provides a hardware method of detecting completion of
program or erase operations (not available on 32-pin
DIP, PLCC & (s)TSOP packages)
- 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX7 sectors
- Any combination of sectors can be erased
- Supports full chip erase
Erase Suspend/Erase Resume
- Sector protection:
- Suspends a sector erase operation to read data from, or
program data to, a non-erasing sector, then resumes the
erase operation
A hardware method of protecting sectors to prevent any
inadvertent program or erase operations within that
sector. Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
- Reduces overall programming time when issuing
multiple program command sequence
Top or bottom boot block configurations available
Embedded Algorithms
Hardware reset pin (
)
RESET
- Hardware method to reset the device to reading array
data (not available on 32 pin DIP, PLCC & (s)TSOP
packages)
Package options
- 40-pin TSOP (forward type), 32-pin DIP, PLCC or
(s)TSOP (forward type)
- All Pb-free (Lead-free) products are RoHS compliant
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors and
verify the erased sectors
General Description
The A29L004 is a 4Mbit, 3.0 volt-only Flash memory
organized as 524,288 bytes of 8 bits. The 8 bits of data
appear on I/O0 - I/O7. The A29L004 is offered in 40-pin
TSOP, 32-pin DIP, PLCC or (s)TSOP packages. This device
is designed to be programmed in-system with the standard
system 3.0 volt VCC supply. Additional 12.0 volt VPP is not
required for in-system write or erase operations. However,
the A29L004 can also be programmed in standard EPROM
programmers.
The A29L004 is entirely software command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
The A29L004 has the first toggle bit, I/O6, which indicates
whether an Embedded Program or Erase is in progress, or it
is in the Erase Suspend. Besides the I/O6 toggle bit, the
A29L004 has a second toggle bit, I/O2, to indicate whether
the addressed sector is being selected for erase. The
A29L004 also offers the ability to program in the Erase
Suspend mode. The standard A29L004 offers access times
of 70 and 90ns, allowing high-speed microprocessors to
operate without wait states. To eliminate bus contention the
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm
-
an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin. The Unlock Bypass mode
facilitates faster programming times by requiring only two
write cycles to program data instead of four.
device has separate chip enable (
), write enable (
)
WE
CE
and output enable (
) controls.
OE
The device requires only a single 3.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The host system can detect whether a program or erase
operation is complete by observing the RY /
pin (not
BY
(November, 2010, Version 1.7)
1
AMIC Technology, Corp.
A29L004 Series
available on 32-pin DIP, PLCC & (s)TSOP), or by reading the
I/O7 ( Polling) and I/O6 (toggle) status bits. After a
or program data to, any other sector that is not selected for
erasure. True background erase can thus be achieved.
Data
The hardware
pin terminates any operation in
RESET
program or erase cycle has been completed, the device is
ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The A29L004 is fully erased when
shipped from the factory.
The hardware sector protection feature disables operations
for both program and erase in any combination of the
sectors of memory. This can be achieved via programming
equipment.
progress and resets the internal state machine to reading
array data (not available on 32-pin DIP, PLCC & (s)TSOP).
The
pin may be tied to the system reset circuitry. A
RESET
system reset would thus also reset the device, enabling the
system microprocessor to read the boot-up firmware from the
Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of time,
the device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power
consumption is greatly reduced in both these modes.
The Erase Suspend/Erase Resume feature enables the user
to put erase on hold for any period of time to read data from,
Pin Configurations
32-pin DIP
40-pin TSOP
PLCC
32-pin TSOP (8mm X 20mm)
32-pin sTSOP (8mm X 13.4mm)
32-pin sTSOP (8mm X 14mm)
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
1
2
3
4
5
6
7
8
9
10
32
31
30
29
28
27
26
25
24
23
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A7
5
29
28
27
26
A14
A13
A8
A6
A5
6
7
A29L004V (8mm X 20mm)
A29L004X (8mm X 13.4mm)
A29L004Y (8mm X 14mm)
GND
I/O2
A9
A4
A3
A2
A1
8
A29L004L
A15
A12
A7
11
12
13
22
21
20
I/O1
I/O0
A0
25
24
A11
9
10
11
OE
A6
A5
A4
14
15
16
19
18
17
A1
A2
A3
23
22
21
A10
A0
12
13
CE
I/O7
I/O0
(November, 2010, Version 1.7)
2
AMIC Technology, Corp.
A29L004 Series
Block Diagram
RY/BY (N/A 32-pin PLCC, (s)TSOP)
I/O0 - I/O7
VCC
VSS
Sector Switches
Input/Output
Buffers
Erase Voltage
Generator
RESET
(N/A 32-pin PLCC,
(s)TSOP)
State
Control
WE
PGM Voltage
Generator
Command
Register
Chip Enable
Output Enable
Logic
STB
Data Latch
CE
OE
Y-Decoder
Y-Gating
STB
VCC Detector
Timer
A0-A18
X-decoder
Cell Matrix
Pin Descriptions
Pin No.
A0 - A18
I/O0 - I/O7
Description
Address Inputs
Data Inputs/Outputs
Chip Enable
CE
WE
Write Enable
Output Enable
OE
Hardware Reset (N/A 32-pin DIP, PLCC, (s)TSOP)
RESET
Ready/
- Output (N/A 32-pin DIP, PLCC, (s)TSOP)
BUSY
RY/
BY
VSS
Ground
VCC
NC
Power Supply
Pin not connected internally
(November, 2010, Version 1.7)
3
AMIC Technology, Corp.
A29L004 Series
Absolute Maximum Ratings*
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V. During
voltage transitions, input or I/O pins may undershoot VSS
to -2.0V for periods of up to 20ns. Maximum DC voltage
on input and I/O pins is VCC +0.5V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0V
for periods up to 20ns.
Storage Temperature Plastic Packages . …… .0°C to + 70°C
Ambient Temperature with Power Applied…… 0°C to + 70°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . . …... . . . -0.5V to +4.0V
A9,
&
(Note 2) . . . . . . . . . . ….. . -0.5 to +12.5V
RESET
OE
All other pins (Note 1) . . . . . . . . . . . ….. -0.5V to VCC + 0.5V
Output Short Circuit Current (Note 3) . . . . . . . ….. … 200mA
Moisture Sensitivity Level (MSL) ….IPC/JEDEC J-STD-020C
2. Minimum DC input voltage on A9,
and
is
-
OE
RESET
and
0.5V. During voltage transitions, A9,
OE
RESET
-
-
-
-
IR Reflow Cycle : 3 Cycles
Peak 260°C , 10 seconds
255°C, 20-40 seconds
may overshoot VSS to -2.0V for periods of up to 20ns.
Maximum DC input voltage on A9 is +12.5V which may
overshoot to 14.0V for periods up to 20ns. (
N/A on 32-pin DIP, PLCC & (s)TSOP)
is
RESET
220°C, 70 seconds upward
3. No more than one output is shorted at a time. Duration of
the short circuit should not be greater than one second.
Operating Ranges
*Comments
Commercial (C) Devices
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended periods
may affect device reliability.
Ambient Temperature (TA) . . . . . . . ….. . . . . . . 0°C to +70°C
VCC Supply Voltages
VCC for all devices . . . . . . . . . . . . . . . ….. . . +2.7V to +3.6V
Operating ranges define those limits between which the
functionally of the device is guaranteed.
Device Bus Operations
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself does
not occupy any addressable memory location. The register is
composed of latches that store the commands, along with
the address and data information needed to execute the
command. The contents of the register serve as inputs to the
internal state machine. The state machine outputs dictate the
function of the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe each of
these operations in further detail.
Table 1. A29L004 Device Bus Operations
Operation
A0 – A18
I/O0 - I/O7
WE
CE
OE
RESET
(N/A 32-pin DIP, PLCC, (s)TSOP)
Read
L
L
H
X
H
X
H
H
L
H
AIN
AIN
X
DOUT
DIN
Write
L
H
CMOS Standby
Output Disable
Hardware Reset
X
H
X
L
High-Z
High-Z
High-Z
DIN
VCC ± 0.3 V
VCC ± 0.3 V
L
X
L
H
L
X
X
Sector Protect
(See Note 2)
VID
Sector Address, A6=L,
A1=H, A0=L
Sector Unprotect
(See Note 2)
L
H
X
L
VID
VID
Sector Address,
A6=H, A1=H, A0=L
DIN
DIN
Temporary Sector
Unprotect
X
X
AIN
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Notes:
1. See the “Sector Protection/Unprotection” section and Temporary Sector Unprotect for more information.
2. This function is not available on 32-pin DIP, PLCC & (s)TSOP packages.
(November, 2010, Version 1.7)
4
AMIC Technology, Corp.
A29L004 Series
Requirements for Reading Array Data
The device enters the CMOS standby mode when the
&
CE
pins (
only on 32-pin DIP, PLCC & (s)TSOP
CE
packages) are both held at VCC ± 0.3V. (Note that this is a
more restricted voltage range than VIH.) If and
RESET
To read array data from the outputs, the system must drive the
and
pins to VIL.
is the power control and selects
CE
OE
OE
the output pins.
CE
is the output control and gates array data to
should remain at VIH all the time during
CE
RESET
the device.
(N/A on 32-pin DIP, PLCC & (s)TSOP packages) are held at
VIH, but not within VCC ± 0.3V, the device will be in the
standby mode, but the standby current will be greater. The
device requires the standard access time (tCE) before it is
ready to read data.
If the device is deselected during erasure or programming, the
device draws active current until the operation is completed.
ICC3 and ICC4 in the DC Characteristics tables represent the
standby current specification.
WE
read operation. The internal state machine is set for reading
array data upon device power-up, or after a hardware reset.
This ensures that no spurious alteration of the memory content
occurs during the power transition. No command is necessary
in this mode to obtain array data. Standard microprocessor
read cycles that assert valid addresses on the device address
inputs produce valid data on the device data outputs. The
device remains enabled for read access until the command
register contents are altered.
Automatic Sleep Mode
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to the
Read Operations Timings diagram for the timing waveforms,
lCC1 in the DC Characteristics table represents the active
current specification for reading array data.
The automatic sleep mode minimizes Flash device energy
consumption. The device automatically enables this mode
when addresses remain stable for tACC +30ns. The automatic
sleep mode is independent of the
,
and
control
OE
WE
CE
signals. Standard address access timings provide new data
when addresses are changed. While in sleep mode, output
data is latched and always available to the system. ICC4 in the
DC Characteristics table represents the automatic sleep mode
current specification.
Writing Commands/Command Sequences
To write a command or command sequence (which includes
programming data to the device and erasing sectors of
memory), the system must drive
and
to VIL, and
CE
WE
Output Disable Mode
to VIH. The device features an Unlock Bypass mode to
OE
facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to
program a byte, instead of four.
The “Byte Program Command Sequence” section has details
on programming data to the device using both standard and
Unlock Bypass command sequence. An erase operation can
erase one sector, multiple sectors, or the entire device. The
Sector Address Tables indicate the address range that each
sector occupies. A "sector address" consists of the address
inputs required to uniquely
When the
input is at VIH, output from the device is
OE
disabled. The output pins are placed in the high impedance
state.
: Hardware Reset Pin (N/A on 32-pin DIP, PLCC &
RESET
(s)TSOP packages)
The pin provides a hardware method of resetting the
RESET
device to reading array data. When the system drives the
pin low for at least a period of tRP, the device
RESET
select a sector. See the "Command Definitions" section for
immediately terminates any operation in progress, tristates all
data output pins, and ignores all read/write attempts for the
duration of the
details on erasing
a
sector or the entire chip, or
suspending/resuming the erase operation.
pulse. The device also resets the
RESET
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can then
read autoselect codes from the internal register (which is
separate from the memory array) on I/O7 - I/O0. Standard read
cycle timings apply in this mode. Refer to the "Autoselect
Mode" and "Autoselect Command Sequence" sections for
more information.
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
internal state machine to reading array data. The operation
that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the
pulse.
RESET
When
is held at VSS ± 0.3V, the device draws CMOS
RESET
standby current (ICC4 ). If
is held at VIL but not within
RESET
VSS ± 0.3V, the standby current will be greater.
The pin may be tied to the system reset circuitry. A
RESET
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the
Flash memory.
Program and Erase Operation Status
If
is asserted during a program or erase operation,
RESET
the RY/
During an erase or program operation, the system may check
the status of the operation by reading the status bits on I/O7 -
I/O0. Standard read cycle timings and ICC read specifications
apply. Refer to "Write Operation Status" for more information,
and to each AC Characteristics section for timing diagrams.
pin remains a “0” (busy) until the internal reset
BY
operation is complete, which requires a time tREADY (during
Embedded Algorithms). The system can thus monitor RY/
BY
to determine whether the reset operation is complete. If
is asserted when a program or erase operation is not
Standby Mode
RESET
executing (RY/
pin is “1”), the reset operation is completed
BY
within a time of tREADY (not during Embedded Algorithms). The
system can read data tRH after the pin return to VIH.
When the system is not reading or writing to the device, it can
place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in
RESET
Refer to the AC Characteristics tables for
and diagram.
parameters
RESET
the high impedance state, independent of the
input.
OE
(November, 2010, Version 1.7)
5
AMIC Technology, Corp.
A29L004 Series
Table 2. A29L004 Top Boot Block Sector Address Table
Sector
A18
A17
A16
A15
A14
A13
Sector Size
(Kbytes)
Address Range
(in hexadecimal)
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
0
0
0
0
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
1
1
1
0
1
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
0
64
64
64
64
64
64
64
32
8
00000h - 0FFFFh
10000h - 1FFFFh
20000h - 2FFFFh
30000h - 3FFFFh
40000h - 4FFFFh
50000h - 5FFFFh
60000h - 6FFFFh
70000h - 77FFFh
78000h - 79FFFh
7A000h - 7BFFFh
7C000h - 7FFFFh
1
1
0
1
8
1
1
X
16
Table 3. A29L004 Bottom Boot Block Sector Address Table
Sector
A18
A17
A16
A15
A14
A13
Sector Size
(Kbytes)
Address Range
(in hexadecimal)
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
0
0
1
0
1
0
1
0
1
0
0
0
1
X
0
16
8
00000h - 03FFFh
04000h - 05FFFh
06000h - 07FFFh
08000h - 0FFFFh
10000h - 1FFFFh
20000h - 2FFFFh
30000h - 3FFFFh
40000h - 4FFFFh
50000h - 5FFFFh
60000h - 6FFFFh
70000h - 7FFFFh
0
1
1
8
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
32
64
64
64
64
64
64
64
X
X
X
X
X
X
X
(November, 2010, Version 1.7)
6
AMIC Technology, Corp.
A29L004 Series
Autoselect Mode
The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on I/O7 - I/O0. This mode is primarily
intended for programming equipment to automatically match
on the appropriate highest order address bits. Refer to the
corresponding Sector Address Tables. The Command
Definitions table shows the remaining address bits that are
don't care. When all necessary bits have been set as
required, the programming equipment may then read the
corresponding identifier code on I/O7 - I/O0.To access the
autoselect codes in-system, the host system can issue the
autoselect command via the command register, as shown in
the Command Definitions table. This method does not
require VID. See "Command Definitions" for details on using
the autoselect mode.
a
device to be programmed with its corresponding
programming algorithm. However, the autoselect codes can
also be accessed in-system through the command register.
When using programming equipment, the autoselect mode
requires VID (11.5V to 12.5 V) on address pin A9. Address
pins A6, A1, and A0 must be as shown in Autoselect
Codes (High Voltage Method) table. In addition, when
verifying sector protection, the sector address must appear
Table 4. A29L004 Autoselect Codes (High Voltage Method)
Description
A18 A12
to to
A13 A10
A9
A8
to
A7
X
A6
A5
to
A2
X
A1
A0
I/O7
to
WE
CE
OE
I/O0
37h
Manufacturer ID: AMIC
Device ID: A29L004
L
L
L
L
H
H
X
X
X
X
VID
VID
L
L
L
L
L
X
X
H
34h
(Top Boot Block)
Device ID: A29L004
(Bottom Boot Block)
B5h
7Fh
L
L
L
L
H
H
X
X
X
X
VID
X
X
L
L
X
X
L
H
H
Continuation ID
VID
H
01h
(protected)
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
00h
(unprotected)
L=Logic Low= VIL, H=Logic High=VIH, SA=Sector Address, X=Don’t Care.
Note: The autoselect codes may also be accessed in-system via command sequences.
(November, 2010, Version 1.7)
7
AMIC Technology, Corp.
A29L004 Series
Sector Protection/Unprotection
Temporary Sector Unprotect (N/A on 32-pin DIP,
PLCC & (s)TSOP packages)
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware
sector unprotection feature re-enables both program and
erase operations in previously protected sectors.
It is possible to determine whether a sector is protected or
unprotected. See “Autoselect Mode” for details.
This feature allows temporary unprotection of previous
protected sectors to change data in-system. The Sector
Unprotect mode is activated by setting the
pin to VID.
RESET
During this mode, formerly protected sectors can be
programmed or erased by selecting the sector addresses.
Sector protection / unprotection can be implemented via two
methods. The primary method requires VID on the
Once VID is removed from the
pin, all the previously
RESET
protected sectors are protected again. Figure 1 shows the
algorithm, and the Temporary Sector Unprotect diagram
shows the timing waveforms, for this feature.
pin only (N/A on 32-pin DIP, PLCC & (s)TSOP
RESET
packages), and can be implemented either in-system or via
programming equipment. Figure 2 shows the algorithm and
the Sector Protect / Unprotect Timing Diagram illustrates the
timing waveforms for this feature. This method uses standard
microprocessor bus cycle timing. For sector unprotect, all
unprotected sectors must first be protected prior to the first
sector unprotect write cycle. The alternate method must be
implemented using programming equipment. The procedure
requires a high voltage (VID) on address pin A9 and the
control pins.
START
RESET = VID
(Note 1)
The device is shipped with all sectors unprotected.
It is possible to determine whether a sector is protected or
unprotected. See "Autoselect Mode" for details.
Hardware Data Protection
Perform Erase or
Program Operations
The requirement of command unlocking sequence for
programming or erasing provides data protection against
inadvertent writes (refer to the Command Definitions table).
In addition, the following hardware data protection measures
prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during
VCC power-up transitions, or from system noise. The device
is powered up to read array data to avoid accidentally writing
data to the array.
RESET = VIH
Write Pulse "Glitch" Protection
Temporary Sector
Unprotect
Completed (Note 2)
Noise pulses of less than 5ns (typical) on
do not initiate a write cycle.
,
or
OE CE
WE
Logical Inhibit
Notes:
Write cycles are inhibited by holding any one of
=VIL,
OE
CE
1. All protected sectors unprotected.
2. All previously protected sectors are protected once again.
= VIH or
= VIH. To initiate a write cycle,
and
WE
CE
must be a logical zero while
is a logical one.
WE
OE
Figure 1. Temporary Sector Unprotect Operation
Power-Up Write Inhibit
If
=
= VIL and
= VIH during power up, the
OE
WE
device does not accept commands on the rising edge of
. The internal state machine is automatically reset to
CE
WE
reading array data on the initial power-up.
(November, 2010, Version 1.7)
8
AMIC Technology, Corp.
A29L004 Series
START
START
Protect all sectors:
The indicated portion of
the sector protect
PLSCNT=1
PLSCNT=1
algorithm must be
performed for all
RESET=VID
RESET=VID
unprotected sectors prior
to issuing the first sector
unprotect address
Wait 1 us
Wait 1 us
No
No
No
Temporary Sector
Unprotect Mode
First Write
Cycle=60h?
First Write
Cycle=60h?
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
All sectors
protected?
Sector Protect
Write 60h to sector
address with A6=0,
A1=1, A0=0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with A6=1,
A1=1, A0=0
Wait 150 us
Verify Sector
Protect: Write 40h
to sector address
with A6=0, A1=1,
A0=0
Reset
PLSCNT=1
Increment
PLSCNT
Wait 15 ms
Verify Sector
Unprotect : Write
40h to sector
address with A6=1,
A1=1, A0=0
Read from
sector address
with A6=0,
Increment
PLSCNT
A1=1, A0=0
No
Read from sector
address with A6=1,
A1=1, A0=0
No
PLSCNT
=25?
Data=01h?
Yes
No
Set up
next sector
address
Yes
No
PLSCNT=
1000?
Yes
Data=00h?
Yes
Protect another
sector?
Device failed
Yes
No
Remove VID
from RESET
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
from RESET
Sector Protect
complete
Sector Protect
Algorithm
Sector Unprotect
Algorithm
Write reset
Command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/Unprotect Algorithms
(November, 2010, Version 1.7)
9
AMIC Technology, Corp.
A29L004 Series
Command Definitions
Autoselect Command Sequence
Writing specific address and data commands or sequences
into the command register initiates device operations. The
Command Definitions table defines the valid register
command sequences. Writing incorrect address and data
values or writing them in the improper sequence resets the
device to reading array data.
The autoselect command sequence allows the host system to
access the manufacturer and devices codes, and determine
whether or not a sector is protected. The Command
Definitions table shows the address and data requirements.
This method is an alternative to that shown in the Autoselect
Codes (High Voltage Method) table, which is intended for
PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two
unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.
All addresses are latched on the falling edge of
or
,
CE
WE
whichever happens later. All data is latched on the rising
edge of or , whichever happens first. Refer to the
WE
CE
appropriate timing diagrams in the "AC Characteristics"
section.
A read cycle at address XX00h retrieves the manufacturer
code and another read cycle at XX03h retrieves the
continuation code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address (SA)
and the address 02h in returns 01h if that sector is protected,
or 00h if it is unprotected. Refer to the Sector Address tables
for valid sector addresses.
Reading Array Data
The device is automatically set to reading array data after
device power-up. No commands are required to retrieve
data. The device is also ready to read array data after
completing an Embedded Program or Embedded Erase
algorithm. After the device accepts an Erase Suspend
command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended
sectors, the device outputs status data. After completing a
programming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See "Erase Suspend/Erase Resume Commands"
for more information on this mode.
The system must issue the reset command to re-enable the
device for reading array data if I/O5 goes high, or while in the
autoselect mode. See the "Reset Command" section, next.
See also "Requirements for Reading Array Data" in the
"Device Bus Operations" section for more information. The
Read Operations table provides the read parameters, and
Read Operation Timings diagram shows the timing diagram.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in turn
initiate the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically provides internally generated program pulses
and verify the programmed cell margin. Table 5 shows the
address and data requirements for the byte program
command sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are
longer latched. The system can determine the status of the
Reset Command
Writing the reset command to the device resets the device to
reading array data. Address bits are don't care for this
command. The reset command may be written between the
sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data.
Once erasure begins, however, the device ignores reset
commands until the operation is complete.
program operation by using I/O7, I/O6, or RY/
pin DIP, PLCC & (s)TSOP packages). See “Write Operation
Status” for information on these status bits.
Any commands written to the device during the Embedded
Program Algorithm are ignored. Note that a hardware reset
immediately terminates the programming operation. The Byte
Program command sequence should be reinitiated once the
device has reset to reading array data, to ensure data
integrity.
(N/A on 32-
BY
The reset command may be written between the sequence
cycles in
a
program command sequence before
programming begins. This resets the device to reading array
data (also applies to programming in Erase Suspend mode).
Once programming begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence
cycles in an autoselect command sequence. Once in the
autoselect mode, the reset command must be written to
return to reading array data (also applies to autoselect during
Erase Suspend).
Programming is allowed in any sequence and across sector
boundaries. A bit cannot be programmed from a “0” back to a
“1”. Attempting to do so may halt the operation and set I/O5 to
“1”, or cause the
Polling algorithm to indicate the
Data
operation was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations can
convert a “0” to a “1”.
If I/O5 goes high during a program or erase operation, writing
the reset command returns the device to reading array data
(also applies during Erase Suspend).
(November, 2010, Version 1.7)
10
AMIC Technology, Corp.
A29L004 Series
00h. Addresses are don’t care for both cycle. The device
returns to reading array data.
START
Figure 3 illustrates the algorithm for the program operation.
See the Erase/Program Operations in “AC Characteristics” for
parameters, and to Program Operation Timings for timing
diagrams.
Write Program
Command
Sequence
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which
in turn invokes the Embedded Erase algorithm. The device
does not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. The Command
Definitions table shows the address and data requirements
for the chip erase command sequence.
Any commands written to the chip during the Embedded
Erase algorithm are ignored. The system can determine the
status of the erase operation by using I/O7, I/O6, or I/O2. See
"Write Operation Status" for information on these status bits.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched.
Data Poll
from System
Embedded
Program
algorithm in
progress
Verify Data ?
Yes
No
Increment Address
Last Address ?
Yes
Figure 4 illustrates the algorithm for the erase operation. See
the Erase/Program Operations tables in "AC Characteristics"
for parameters, and to the Chip/Sector Erase Operation
Timings for timing waveforms.
Programming
Completed
Sector Erase Command Sequence
Sector erase is a six-bus-cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. The Command
Definitions table shows the address and data requirements
for the sector erase command sequence.
Note : See the appropriate Command Definitions table for
program command sequence.
Figure 3. Program Operation
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these
operations.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program
bytes or words to the device faster than using the standard
program command sequence. The unlock bypass command
sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass
command, 20h. The device then enters the unlock bypass
After the command sequence is written, a sector erase time-
out of 50μs begins. During the time-out period, additional
sector addresses and sector erase commands may be
written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector
to all sectors. The time between these additional cycles must
be less than 50μs, otherwise the last address and command
might not be accepted, and erasure may begin. It is
recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional sector
erase commands can be assumed to be less than 50μs, the
system need not monitor I/O3. Any command other than
Sector Erase or Erase Suspend during the time-out period
resets the device to reading array data. The system must
rewrite the command sequence and any additional sector
addresses and commands.
mode.
A two-cycle unlock bypass program command
sequence is all that is required to program in this mode. The
first cycle in this sequence contains the unlock bypass
program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two
unlock cycles required in the standard program command
sequence, resulting in faster total programming time. Table 5
shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass
Program and Unlock Bypass Reset commands are valid. To
exit the unlock bypass mode, the system must issue the two-
cycle unlock bypass reset command sequence. The first
cycle must contain the data 90h; the second cycle the data
(November, 2010, Version 1.7)
11
AMIC Technology, Corp.
A29L004 Series
The system can monitor I/O3 to determine if the sector erase
timer has timed out. (See the " I/O3: Sector Erase Timer"
section.) The time-out begins from the rising edge of the final
The system may also write the autoselect command
sequence when the device is in the Erase Suspend mode.
The device allows reading autoselect codes even at
addresses within erasing sectors, since the codes are not
stored in the memory array. When the device exits the
autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. See
"Autoselect Command Sequence" for more information.
The system must write the Erase Resume command
(address bits are "don't care") to exit the erase suspend
mode and continue the sector erase operation. Further writes
of the Resume command are ignored. Another Erase
Suspend command can be written after the device has
resumed erasing.
pulse in the command sequence.
WE
Once the sector erase operation has begun, only the Erase
Suspend command is valid. All other commands are ignored.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O7, I/O6, or I/O2. Refer to "Write
Operation Status" for information on these status bits.
4 illustrates the algorithm for the erase operation. Refer to
the Erase/Program Operations tables in the "AC
Characteristics" section for parameters, and to the Sector
Erase Operations Timing diagram for timing waveforms.
Erase Suspend/Erase Resume Commands
START
The Erase Suspend command allows the system to interrupt
a sector erase operation and then read data from, or
program data to, any sector not selected for erasure. This
command is valid only during the sector erase operation,
including the 50μs time-out period during the sector erase
command sequence. The Erase Suspend command is
ignored if written during the chip erase operation or
Embedded Program algorithm. Writing the Erase Suspend
command during the Sector Erase time-out immediately
terminates the time-out period and suspends the erase
operation. Addresses are "don't cares" when writing the
Erase Suspend command.
Write Erase
Command
Sequence
Data Poll
from System
Embedded
Erase
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum of
20μs to suspend the erase operation. However, when the
Erase Suspend command is written during the sector erase
time-out, the device immediately terminates the time-out
period and suspends the erase operation.
algorithm in
progress
No
Data = FFh ?
After the erase operation has been suspended, the system
can read array data from or program data to any sector not
selected for erasure. (The device "erase suspends" all
sectors selected for erasure.) Normal read and write timings
and command definitions apply. Reading at any address
within erase-suspended sectors produces status data on I/O7
- I/O0. The system can use I/O7, or I/O6 and I/O2 together, to
determine if a sector is actively erasing or is erase-
suspended. See "Write Operation Status" for information on
these status bits.
Yes
Erasure Completed
Note :
1. See the appropriate Command Definitions table for erase
command sequences.
After an erase-suspended program operation is complete,
the system can once again read array data within non-
suspended sectors. The system can determine the status of
the program operation using the I/O7 or I/O6 status bits, just
as in the standard program operation. See "Write Operation
Status" for more information.
2. See "I/O
3
: Sector Erase Timer" for more information.
Figure 4. Erase Operation
(November, 2010, Version 1.7)
12
AMIC Technology, Corp.
A29L004 Series
Table 5. A29L004 Command Definitions
Command Sequence
(Note 1)
Bus Cycles (Notes 2 - 5)
Third Fourth
Addr Data Addr Data Addr Data Addr Data
First
Addr Data Addr Data
RA RD
Second
Fifth
Sixth
Read (Note 6)
Reset (Note 7)
Manufacturer ID
1
1
4
XXX F0
555 AA
2AA 55
2AA 55
555
555
90 X00
37
34
Device ID,
4
555 AA
90
X01
Top Boot Block
Device ID,
4
4
555 AA
555 AA
2AA
55
555
90
X01
X03
B5
7F
Bottom Boot Block
Continuation ID
2AA 55
555 90
555 90
Sector Protect Verify
(Note 9)
(SA) XX00
4
555 AA
555 AA
2AA 55
X02
PA
XX01
PD
Program
4
3
2AA 55
2AA 55
555 A0
555 20
Unlock Bypass
555
AA
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
Chip Erase
2
2
6
6
XXX A0
XXX 90
555 AA
PA
PD
00
XXX
2AA 55
2AA 55
555 80
555
AA
2AA 55
2AA 55
555
SA
10
30
Sector Erase
555
AA
555
80
555 AA
Erase Suspend (Note 12)
Erase Resume (Note 13)
1
1
XXX B0
XXX 30
Legend:
X = Don't care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the
whichever happens later.
or
pulse,
CE
WE
PD = Data to be programmed at location PA. Data latches on the rising edge of
or
pulse, whichever happens first.
CE
WE
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18 - A13 select a unique sector.
Note:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operation.
4. Address bits A18 - A11 are don't cares for unlock and command cycles, unless SA or PA required.
5. No unlock or command cycles required when reading array data.
6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high
(while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a read cycle.
8. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more
information.
9. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
10. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass
mode.
11. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode.
12. The Erase Resume command is valid only during the Erase Suspend mode.
(November, 2010, Version 1.7)
13
AMIC Technology, Corp.
A29L004 Series
Write Operation Status
START
Several bits, I/O2, I/O3, I/O5, I/O6, I/O7, RY/
the A29L004 to determine the status of a write operation
are provided in
BY
(RY/ pin is not available on 32-pin DIP, PLCC & (s)TSOP
BY
packages). Table 6 and the following subsections describe
the functions of these status bits. I/O7, I/O6 and RY/ each
offer a method for determining whether a program or erase
operation is complete or in progress. These three bits are
discussed first.
Read I/O
Address = VA
7
-I/O
0
BY
I/O7:
Polling
Data
Yes
I/O7
= Data ?
No
The
Polling bit, I/O7, indicates to the host system
Data
whether an Embedded Algorithm is in progress or completed,
or whether the device is in Erase Suspend. Polling is
Data
pulse in the
valid after the rising edge of the final
program or erase command sequence.
WE
During the Embedded Program algorithm, the device outputs
on I/O7 the complement of the datum programmed to I/O7.
This I/O7 status also applies to programming during Erase
Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to I/O7.
The system must provide the program address to read valid
status information on I/O7. If a program address falls within a
No
I/O5 = 1?
Yes
protected sector,
approximately 2μs, then the device returns to reading array
data.
Polling on I/O7 is active for
Data
Read I/O
Address = VA
7 - I/O0
During the Embedded Erase algorithm,
Polling
Data
produces a "0" on I/O7. When the Embedded Erase algorithm
is complete, or if the device enters the Erase Suspend mode,
Yes
Polling produces a "1" on I/O7.This is analogous to the
Data
I/O7
= Data ?
complement/true datum output described for the Embedded
Program algorithm: the erase function changes all the bits in
a sector to "1"; prior to this, the device outputs the
"complement," or "0." The system must provide an address
within any of the sectors selected for erasure to read valid
status information on I/O7.
No
After an erase command sequence is written, if all sectors
FAIL
PASS
selected for erasing are protected,
Polling on I/O7 is
Data
active for approximately 100μs, then the device returns to
reading array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
When the system detects I/O7 has changed from the
complement to true data, it can read valid data at I/O7 - I/O0
on the following read cycles. This is because I/O7 may
change asynchronously with I/O0 - I/O6 while Output Enable
Note :
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. I/O
7
should be rechecked even if I/O
may change simultaneously with I/O
5 = "1" because
I/O7
5
.
(
) is asserted low. The
Polling Timings (During
Data
OE
Embedded Algorithms) in the "AC Characteristics" section
illustrates this. Table 6 shows the outputs for Polling
Figure 5. Data Polling Algorithm
Data
Polling algorithm.
on I/O7. Figure 5 shows the
Data
(November, 2010, Version 1.7)
14
AMIC Technology, Corp.
A29L004 Series
sector is erase-suspended. Toggle Bit II is valid after the
RY/
: Read/
(N/A on 32-pin DIP, PLCC &
Busy
BY
rising edge of the final
I/O2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
pulse in the command sequence.
WE
(s)TSOP packages)
The RY/
is a dedicated, open-drain output pin that
BY
indicates whether an Embedded algorithm is in progress or
complete. The RY/ status is valid after the rising edge of
system may use either
or
to control the read
CE
OE
cycles.) But I/O2 cannot distinguish whether the sector is
actively erasing or is erase-suspended. I/O6, by comparison,
indicates whether the device is actively erasing, or is in Erase
Suspend, but cannot distinguish which sectors are selected
for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 6 to compare outputs for
I/O2 and I/O6.
Figure 6 shows the toggle bit algorithm in flowchart form, and
the section " I/O2: Toggle Bit II" explains the algorithm. See
also the " I/O6: Toggle Bit I" subsection. Refer to the Toggle
Bit Timings figure for the toggle bit timing diagram. The I/O2
vs. I/O6 figure shows the differences between I/O2 and I/O6 in
graphical form.
BY
pulse in the command sequence. Since
the final
WE
RY/
is an open-drain output, several RY/
pins can be
BY
BY
tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or
programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is
ready to read array data (including during the Erase Suspend
mode), or is in the standby mode.
Table 6 shows the outputs for RY/
. Refer to “
RESET
BY
Timings”, “Timing Waveforms for Program Operation” and
“Timing Waveforms for Chip/Sector Erase Operation” for
more information.
Reading Toggle Bits I/O6, I/O2
I/O6: Toggle Bit I
Refer to Figure 6 for the following discussion. Whenever the
system initially begins reading toggle bit status, it must read
I/O7 - I/O0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, a system would note and
store the value of the toggle bit after the first read. After the
second read, the system would compare the new value of the
toggle bit with the first. If the toggle bit is not toggling, the
device has completed the program or erase operation. The
system can read array data on I/O7 - I/O0 on the following
read cycle.
Toggle Bit I on I/O6 indicates whether an Embedded Program
or Erase algorithm is in progress or complete, or whether the
device has entered the Erase Suspend mode. Toggle Bit I
may be read at any address, and is valid after the rising edge
of the final
pulse in the command sequence (prior to the
WE
program or erase operation), and during the sector erase
time-out.
During an Embedded Program or Erase algorithm operation,
successive read cycles to any address cause I/O6 to toggle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also
should note whether the value of I/O5 is high (see the section
on I/O5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may
have stopped toggling just as I/O5 went high. If the toggle bit
is no longer toggling, the device has successfully completed
the program or erase operation. If it is still toggling, the
device did not complete the operation successfully, and the
system must write the reset command to return to reading
array data.
The remaining scenario is that the system initially determines
that the toggle bit is toggling and I/O5 has not gone high. The
system may continue to monitor the toggle bit and I/O5
through successive read cycles, determining the status as
described in the previous paragraph. Alternatively, it may
choose to perform other system tasks. In this case, the
system must start at the beginning of the algorithm when it
returns to determine the status of the operation (top of Figure
6).
(The system may use either
or
to control the read
CE
OE
cycles.) When the operation is complete, I/O6 stops toggling.
After an erase command sequence is written, if all sectors
selected for erasing are protected, I/O6 toggles for
approximately 100μs, then returns to reading array data. If
not all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use I/O6 and I/O2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), I/O6 toggles. When the
device enters the Erase Suspend mode, I/O6 stops toggling.
However, the system must also use I/O2 to determine which
sectors are erasing or erase-suspended. Alternatively, the
system can use I/O7 (see the subsection on " I/O7 :
Polling").
Data
If a program address falls within a protected sector, I/O6
toggles for approximately 2μs after the program command
sequence is written, then returns to reading array data.
I/O6 also toggles during the erase-suspend-program mode,
and stops toggling once the Embedded Program algorithm is
complete.
The Write Operation Status table shows the outputs for
Toggle Bit I on I/O6. Refer to Figure 6 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the "AC
Characteristics" section for the timing diagram. The I/O2 vs.
I/O6 figure shows the differences between I/O2 and I/O6 in
graphical form. See also the subsection on " I/O2: Toggle Bit II".
I/O5: Exceeded Timing Limits
I/O5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions I/O5 produces a "1." This is a failure condition that
indicates the program or erase cycle was not successfully
completed.
The I/O5 failure condition may appear if the system tries to
program a "1 "to a location that is previously programmed to
"0." Only an erase operation can change a "0" back to a "1."
Under this condition, the device halts the operation, and
when the operation has exceeded the timing limits, I/O5
produces a "1."
I/O2: Toggle Bit II
The "Toggle Bit II" on I/O2, when used with I/O6, indicates
whether a particular sector is actively erasing (that is, the
Embedded Erase algorithm is in progress), or whether that
Under both these conditions, the system must issue the
reset command to return the device to reading array data.
(November, 2010, Version 1.7)
15
AMIC Technology, Corp.
A29L004 Series
I/O3: Sector Erase Timer
After writing a sector erase command sequence, the system
may read I/O3 to determine whether or not an erase
operation has begun. (The sector erase timer does not apply
to the chip erase command.) If additional sectors are
selected for erasure, the entire time-out also applies after
each additional sector erase command. When the time-out
is complete, I/O3 switches from "0" to "1." The system may
ignore I/O3 if the system can guarantee that the time
between additional sector erase commands will always be
less than 50μs. See also the "Sector Erase Command
Sequence" section.
START
Read I/O
7
-I/O
0
Read I/O
7
-I/O
0
(Note 1)
After the sector erase command sequence is written, the
system should read the status on I/O7 (
Polling) or I/O6
Data
(Toggle Bit I) to ensure the device has accepted the
command sequence, and then read I/O3. If I/O3 is "1", the
internally controlled erase cycle has begun; all further
commands (other than Erase Suspend) are ignored until the
erase operation is complete. If I/O3 is "0", the device will
accept additional sector erase commands. To ensure the
command has been accepted, the system software should
check the status of I/O3 prior to and following each
subsequent sector erase command. If I/O3 is high on the
second status check, the last command might not have been
accepted. Table 6 shows the outputs for I/O3.
No
Toggle Bit
= Toggle ?
Yes
No
I/O5 = 1?
Yes
- I/O
Read I/O
7
0
(Notes 1,2)
Twice
No
Toggle Bit
= Toggle ?
Yes
Program/Erase
Operation Not
Commplete, Write
Reset Command
Program/Erase
Operation Complete
Notes :
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as I/O
5
changes to "1". See text.
Figure 6. Toggle Bit Algorithm
(November, 2010, Version 1.7)
16
AMIC Technology, Corp.
A29L004 Series
Table 6. Write Operation Status
I/O7
I/O6
I/O5
I/O3
I/O2
RY/
BY
Operation
(Note 1)
(Note 2)
(Note 1) (N/A on 32-pin DIP, PLCC
& (s)TSOP packages)
Standard
Mode
Embedded Program
Algorithm
Toggle
Toggle
0
0
N/A
1
No
toggle
0
I/O7
0
Embedded Erase
Algorithm
Toggle
0
No
toggle
Erase
Suspend
Mode
Reading within Erase
Suspended Sector
1
0
N/A
Toggle
1
Reading within Non-
Erase Suspended Sector
Data
I/O7
Data
Data
0
Data
N/A
Data
N/A
1
0
Erase-Suspend-Program
Toggle
Notes:
1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “I/O5: Exceeded Timing Limits” for more information.
Maximum Negative Input Overshoot
20ns
20ns
+0.8V
-0.5V
-2.0V
20ns
Maximum Positive Input Overshoot
20ns
VCC+2.0V
VCC+0.5V
2.0V
20ns
20ns
(November, 2010, Version 1.7)
17
AMIC Technology, Corp.
A29L004 Series
DC Characteristics
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min.
Typ.
Max.
Unit
ILI
Input Load Current
VIN = VSS to VCC. VCC = VCC Max
VCC = VCC Max, A9 =12.5V
±1.0
35
μA
μA
μA
ILIT
ILO
A9 Input Load Current
Output Leakage Current
VOUT = VSS to VCC. VCC = VCC Max
±1.0
5 MHz
4
2
10
4
VCC Active Read Current
(Notes 1, 2)
ICC1
= VIL,
= VIH
OE
CE
mA
1 MHz
VCC Active Write (Program/Erase)
Current (Notes 2, 3, 4)
ICC2
20
30
mA
= VIL,
=VIH
OE
CE
CE
ICC3
ICC4
VCC Standby Current (Note 2)
1
1
1
5
5
μA
= VIH,
= VCC ± 0.3V
RESET
VCC Standby Current During Reset
(Note 2) (N/A on 32-pin DIP, PLCC &
(s)TSOP packages)
μA
= VSS ± 0.3V
RESET
ICC5
Automatic Sleep Mode
(Note 2, 4, 5)
5
VIH = VCC ± 0.3V; VIL = VSS ± 0.3V
μA
VIL
VIH
VID
Input Low Level
-0.5
0.8
V
V
Input High Level
0.7 x VCC
VCC + 0.3
Voltage for Autoselect and
Temporary Unprotect Sector
Output Low Voltage
VCC = 3.3 V
11.5
12.5
0.45
V
VOL
VOH1
VOH2
IOL = 4.0mA, VCC = VCC Min
IOH = -2.0 mA, VCC = VCC Min
IOH = -100 μA, VCC = VCC Min
V
V
V
0.85 x VCC
VCC - 0.4
Output High Voltage
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with
at VIH. Typical VCC is 3.0V.
OE
2. Maximum ICC specifications are tested with VCC = VCC max.
3. ICC active while Embedded Algorithm (program or erase) is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current
is 1μA.
5. Not 100% tested.
(November, 2010, Version 1.7)
18
AMIC Technology, Corp.
A29L004 Series
DC Characteristics (continued)
Zero Power Flash
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1MHz
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
3.6V
2.7V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note : T = 25°C
Typical ICC1 vs. Frequency
(November, 2010, Version 1.7)
19
AMIC Technology, Corp.
A29L004 Series
AC Characteristics
Read Only Operations
Parameter Symbols
Description
Test Setup
Speed
Unit
JEDEC
Std
-70
-90
Read Cycle Time (Note 1)
Address to Output Delay
tAVAV
tRC
Min.
70
90
ns
= VIL
tAVQV
tACC
CE
Max.
70
90
ns
= VIL
OE
Chip Enable to Output Delay
Output Enable to Output Delay
tELQV
tGLQV
tCE
Max.
Max.
Min.
70
30
0
90
35
0
ns
ns
ns
= VIL
OE
tOE
Read
Output Enable Hold
tOEH
Toggle and
Polling
Time (Note 1)
ns
Min.
10
25
10
30
Data
Chip Enable to Output High Z
(Notes 1)
tEHQZ
tGHQZ
tDF
tDF
Max.
ns
ns
Output Enable to Output High Z
(Notes 1)
25
0
30
0
Output Hold Time from Addresses,
tAXQX
tOH
Min.
ns
or
, Whichever Occurs First
CE OE
(Note 1)
Notes:
1. Not 100% tested.
2. See Test Conditions and Test Setup for test specifications.
Timing Waveforms for Read Only Operation
t
RC
Addresses
Addresses Stable
t
ACC
CE
OE
t
DF
t
OE
t
OEH
WE
t
CE
t
OH
High-Z
High-Z
Output
Output Valid
RESET
RY/BY
0V
(November, 2010, Version 1.7)
20
AMIC Technology, Corp.
A29L004 Series
AC Characteristics
Hardware Reset (
Parameter
, N/A on 32-pin DIP, PLCC & (s)TSOP packages)
RESET
Description
Test Setup
All Speed Options
Unit
JEDEC
Std
Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
RESET
tREADY
Max
20
μs
Pin Low (Not During Embedded
RESET
Algorithms) to Read or Write (See Note)
tREADY
Max
500
ns
tRP
tRH
Min
Min
Min
Min
500
50
0
ns
ns
ns
μs
Pulse Width
RESET
RESET
High Time Before Read (See Note)
Recovery Time
tRB
RY/
BY
tRPD
20
Low to Standby Mode
RESET
Note: Not 100% tested.
Timings
RESET
RY/BY
CE, OE
RESET
t
RH
t
RP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY
t
RB
CE, OE
RESET
t
RP
(November, 2010, Version 1.7)
21
AMIC Technology, Corp.
A29L004 Series
Temporary Sector Unprotect (N/A on 32-pin DIP, PLCC & (s)TSOP packages)
Parameter
Description
All Speed Options
Unit
ns
JEDEC
Std
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
4
Setup Time for Temporary Sector
RESET
Unprotect
tRSP
μs
Note: Not 100% tested.
Temporary Sector Unprotect Timing Diagram
12V
0 or 3V
RESET
0 or 3V
t
VIDR
tVIDR
Program or Erase Command Sequence
CE
WE
t
RSP
RY/BY
(November, 2010, Version 1.7)
22
AMIC Technology, Corp.
A29L004 Series
AC Characteristics
Erase and Program Operations
Parameter
Description
Speed
Unit
JEDEC
Std
-70
-90
tAVAV
tAVWL
tWC
tAS
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min.
Min.
Min.
Min.
Min.
Min.
Min.
70
90
ns
ns
ns
ns
ns
ns
ns
0
tWLAX
tDVWH
tWHDX
tAH
45
35
45
45
tDS
tDH
Data Hold Time
0
0
0
tOES
tGHWL
Output Enable Setup Time
tGHWL
Read Recover Time Before Write
high to low)
(
WE
OE
tELWL
tWHEH
tWLWH
tWHWL
tWHWH1
tCS
tCH
Min.
Min.
Min.
Min.
Typ.
0
0
ns
ns
ns
ns
μs
Setup Time
Hold Time
CE
CE
tWP
Write Pulse Width
35
35
tWPH
tWHWH1
Write Pulse Width High
30
17
Byte Programming Operation
(Note 2)
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ.
Min.
1
sec
tvcs
VCC Set Up Time (Note 1)
50
μs
tRB
Recovery Time from RY/
BY
(N/A on 32-pin DIP, PLCC & (s)TSOP packages)
Program/Erase Valid to RY/ Delay
Min
Min
0
ns
ns
tBUSY
BY
(N/A on 32-pin DIP, PLCC & (s)TSOP packages)
90
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
(November, 2010, Version 1.7)
23
AMIC Technology, Corp.
A29L004 Series
Timing Waveforms for Program Operation
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
t
WC
tAS
Addresses
CE
PA
PA
555h
PA
t
AH
t
CH
OE
t
WP
t
WHWH1
WE
t
CS
t
WPH
t
DS
t
DH
Data
A0h
PD
DOUT
Status
t
RB
t
BUSY
RY/BY
VCC
t
VCS
Note :
1. PA = program addrss, PD = program data, Dout is the true data at the program address.
2. Illustration shows device in word mode.
(November, 2010, Version 1.7)
24
AMIC Technology, Corp.
A29L004 Series
Timing Waveforms for Chip/Sector Erase Operation
Erase Command Sequence (last two cycles)
Read Status Data
t
AS
t
WC
SA
555h for chip erase
VA
Addresses
CE
2AAh
VA
tAH
OE
t
CH
t
WP
WE
t
WPH
t
WHWH2
tCS
t
DS
tDH
In
Progress
Data
55h
30h
10h for chip erase
Complete
tRB
tBUSY
RY/BY
t
VCS
VCC
Note :
1. SA = Sector Address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operaion Ststus").
2. Illustratin shows device in word mode.
(November, 2010, Version 1.7)
25
AMIC Technology, Corp.
A29L004 Series
Timing Waveforms for
Polling (During Embedded Algorithms)
Data
tRC
Addresses
VA
VA
VA
tAC
C
CE
tCH
OE
tCE
tOE
tDF
tOEH
WE
tOH
High-Z
Valid Data
I/O7
Complement
Complement
Status Data
True
True
High-Z
I/O0 - I/O6
High-Z
Status Data
Valid Data
tBUSY
RY/BY
Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Timing Waveforms for Toggle Bit (During Embedded Algorithms)
tRC
Addresses
CE
VA
VA
VA
VA
tAC
C
tCE
tCH
tOE
OE
tDF
tOEH
WE
tOH
I/O6 , I/O2
High-Z
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
tBUSY
(second read)
(stop togging)
RY/BY
Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
(November, 2010, Version 1.7)
26
AMIC Technology, Corp.
A29L004 Series
Timing Waveforms for Sector Protect/Unprotect
VID
VIH
RESET
SA, A6,
A1, A0
Valid*
Valid*
Valid*
Status
Sector Protect/Unprotect
Verify
40h
60h
60h
Data
CE
Sector Protect:150us
Sector Unprotect:15ms
1us
WE
OE
Note : For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0
Timing Waveforms for I/O2 vs. I/O6
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
WE
I/O
Erase
Suspend
Program
Erase
Erase
Erase Suspend
Erase Suspend
Read
Erase
Complete
Read
6
I/O2
I/O2
and I/O
6
toggle with OE and CE
Note : Both I/O
6
and I/O
2
toggle with OE or CE. See the text on I/O
6
and I/O
2
in the section "Write Operation Status" for
more information.
(November, 2010, Version 1.7)
27
AMIC Technology, Corp.
A29L004 Series
AC Characteristics
Erase and Program Operations
Alternate
Controlled Writes
CE
Parameter
Description
Speed
Unit
JEDEC
Std
tWC
tAS
-70
-90
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min.
Min.
Min.
Min.
Min.
Min.
Min.
70
90
ns
ns
ns
ns
ns
ns
ns
0
tAH
45
35
45
45
tDS
tDH
Data Hold Time
0
0
0
tOES
tGHEL
Output Enable Setup Time
tGHEL
Read Recover Time Before Write
(
High to
Low)
WE
OE
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
Min.
Min.
Min.
Min.
0
0
ns
ns
ns
ns
Setup Time
Hold Time
WE
WE
CE
CE
35
35
Pulse Width
tCPH
30
Pulse Width High
tWHWH1
tWHWH2
tWHWH1
tWHWH2
Byte Programming Operation (Note 2)
Sector Erase Operation (Note 2)
Typ.
Typ.
17
1
μs
sec
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
(November, 2010, Version 1.7)
28
AMIC Technology, Corp.
A29L004 Series
Timing Waveforms for Alternate
Controlled Write Operation
CE
PA for program
SA for sector erase
555 for chip erase
555 for program
2AA for erase
Data Polling
PA
Addresses
tWC
tAS
tAH
tWH
WE
OE
tWHWH1 or 2
tCP
tBUSY
tCPH
tDH
CE
tWS
tDS
Data
DOUT
I/O7
PD for program
30 for sector erase 10
for chip erase
tRH
A0 for program
55 for erase
RESET
RY/BY
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Erase and Programming Performance
Parameter
Sector Erase Time
Typ. (Note 1)
Max. (Note 2)
Unit
sec
sec
μs
Comments
1
8
Excludes 00h programming
prior to erasure
Chip Erase Time
11
17
64
Byte Programming Time
200
Excludes system-level
overhead (Note 5)
Chip Programming Time (Note 3)
6
13.5
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycles. Additionally, programming
typically assumes checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set I/O5 = 1. See the section on I/O5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 5
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
(November, 2010, Version 1.7)
29
AMIC Technology, Corp.
A29L004 Series
Latch-up Characteristics
Description
Min.
-1.0V
Max.
VCC+1.0V
+100 mA
12.5V
Input Voltage with respect to VSS on all I/O pins
VCC Current
-100 mA
-1.0V
Input voltage with respect to VSS on all pins except I/O pins
(including A9,
and
)
RESET
OE
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at time.
TSOP Pin Capacitance
Parameter Symbol
Parameter Description
Input Capacitance
Test Setup
VIN=0
Typ.
6
Max.
7.5
12
Unit
pF
CIN
COUT
CIN2
Output Capacitance
VOUT=0
VIN=0
8.5
7.5
pF
Control Pin Capacitance
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0MHz
PLCC Pin Capacitance
Parameter Symbol
Parameter Description
Test Setup
VIN=0
Typ.
Max.
6
Unit
pF
CIN
COUT
CIN2
Input Capacitance
4
8
8
Output Capacitance
Control Pin Capacitance
VOUT=0
VPP=0
pF
12
pF
12
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0MHz
Data Retention
Parameter
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
20
125°C
(November, 2010, Version 1.7)
30
AMIC Technology, Corp.
A29L004 Series
Test Conditions
Test Specifications
Test Condition
-70
-90
Unit
Output Load
1 TTL gate
Output Load Capacitance, CL(including jig capacitance)
Input Rise and Fall Times
30
5
100
5
pF
ns
V
Input Pulse Levels
0.0 - 3.0
1.5
0.0 - 3.0
1.5
Input timing measurement reference levels
Output timing measurement reference levels
V
1.5
1.5
V
Test Setup
3.3 V
2.7 KΩ
Device
Under
Test
Diodes = IN3064 or Equivalent
CL
6.2 KΩ
(November, 2010, Version 1.7)
31
AMIC Technology, Corp.
A29L004 Series
Ordering Information
Top Boot Sector Flash
Part No.
Access Time
(ns)
Active Read
Current
Program/Erase
Current
Standby Current
Package
Typ. (μA)
Typ. (mA)
Typ. (mA)
A29L004TL-70
A29L004TL-70F
A29L004TX-70
A29L004TX-70F
A29L004TV-70
A29L004TV-70F
A29L004TW-70
A29L004TW-70F
A29L004TY-70
A29L004TY-70F
A29L004TL-90
A29L004TL-90F
A29L004TX-90
A29L004TX-90F
A29L004TV-90
A29L004TV-90F
A29L004TW-90
A29L004TW-90F
A29L004TY-90
A29L004TY-90F
32-pin PLCC
32-Pin Pb-Free PLCC
32-pin sTSOP
(8mm X 13.4mm)
32-Pin Pb-Free sTSOP
(8mm X 13.4mm)
32-pin TSOP
(8mm X 20mm)
32-pin Pb-Free TSOP
(8mm X 20mm)
40-pin TSOP
40-pin Pb-Free TSOP
32-pin sTSOP
(8mm X 14mm)
32-Pin Pb-Free sTSOP
(8mm X 14mm)
32-pin PLCC
32-pin Pb-Free PLCC
32-pin sTSOP
(8mm X 13.4mm)
32-pin Pb-Free sTSOP
(8mm X 13.4mm)
32-pin TSOP
(8mm X 20mm)
32-pin Pb-Free TSOP
(8mm X 20mm)
40-pin TSOP
40-pin Pb-Free TSOP
32-pin sTSOP
(8mm X 14mm)
32-Pin Pb-Free sTSOP
(8mm X 14mm)
(November, 2010, Version 1.7)
32
AMIC Technology, Corp.
A29L004 Series
Bottom Boot Sector Flash
Part No.
Access Time
Active Read
Current
Program/Erase
Current
Standby Current
Package
(ns)
Typ. (μA)
Typ. (mA)
Typ. (mA)
A29L004U-70
32-pin DIP
32-pin Pb-Free DIP
32-pin PLCC
A29L004U-70F
A29L004UL-70
A29L004UL-70F
A29L004UX-70
A29L004UX-70F
A29L004UV-70
A29L004UV-70F
A29L004UW-70
A29L004UW-70F
A29L004UY-70
A29L004UY-70F
A29L004U-90
32-pin Pb-Free PLCC
32-pin sTSOP
(8mm X 13.4mm)
32-pin Pb-Free sTSOP
(8mm X 13.4mm)
32-pin TSOP
(8mm X 20mm)
32-pin Pb-Free TSOP
(8mm X 20mm)
70
4
20
0.2
40-pin TSOP
40-pin Pb-Free TSOP
32-pin sTSOP
(8mm X 14mm)
32-Pin Pb-Free sTSOP
(8mm X 14mm)
32-pin DIP
32-pin Pb-Free DIP
32-pin PLCC
A29L004U-90F
A29L004UL-90
A29L004UL-90F
A29L004UX-90
A29L004UX-90F
A29L004UV-90
A29L004UV-90F
A29L004UW-90
A29L004UW-90F
A29L004UY-90
A29L004UY-90F
32-pin Pb-Free PLCC
32-pin sTSOP
(8mm X 13.4mm)
32-pin Pb-Free sTSOP
(8mm X 13.4mm)
32-pin TSOP
(8mm X 13.4mm)
32-pin Pb-Free TSOP
(8mm X 13.4mm)
90
4
20
0.2
40-pin TSOP
40-pin Pb-Free TSOP
32-pin sTSOP
(8mm X 14mm)
32-Pin Pb-Free sTSOP
(8mm X 14mm)
(November, 2010, Version 1.7)
33
AMIC Technology, Corp.
A29L004 Series
Package Information
P-DIP 32L Outline Dimensions
unit: inches/mm
D
32
17
1
16
E
1
Base Plane
Seating Plane
B
E
A
θ
e
B
1
Dimensions in inches
Dimensions in mm
Symbol
Min
-
Nom
Max
0.210
-
Min
Nom
Max
A
-
-
-
-
-
5.334
-
A1
A2
0.015
0.149
0.381
3.785
0.154
0.159
3.912
4.039
B
-
-
0.018
0.050
-
-
-
-
-
-
0.457
1.270
0.254
-
-
-
B1
C
D
-
0.010
1.650
1.645
1.655 41.783 41.91 42.037
0.547 13.64 13.767 13.894
E
E1
EA
e
0.537
0.590
0.630
-
0.542
0.600
0.650
0.100
0.130
-
0.610 14.986 15.240 15.494
0.670 16.002 16.510 17.018
-
-
2.540
3.302
-
-
L
0.120
0°
0.140
15°
3.048
0°
3.556
15°
θ
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
(November, 2010, Version 1.7)
34
AMIC Technology, Corp.
A29L004 Series
Package Information
TSOP 40L TYPE I (10 X 20mm) Outline Dimensions
unit: inches/mm
A
A2
A1
0.076
C
Pin1
D
1
D
Detail "A"
Gage Plane
θ
Seating Plane
L
Dimensions in inches
Dimensions in mm
Symbol
Min
-
Nom
Max
Min
Nom
Max
-
-
-
-
A
A1
A2
b
0.047
0.006
0.041
1.20
0.15
1.05
0.27
0.21
-
1.00
0.002
0.037
0.05
0.95
0.17
0.10
0.039
0.0067 0.0087 0.0106
0.22
c
0.004
-
0.0083
-
E
0.394 BSC
0.020 BSC
0.787 BSC
0.724 BSC
0.024
10.00 BSC
0.50 BSC
20.00 BSC
18.40 BSC
0.60
e
D
D1
L
0.020
0.028
0.50
0.70
θ
0°
3°
5°
0°
3°
5°
Notes:
1. Dimension D1 and E do not include mold flash.
2. The lead width dimension does not include dambar protrusion.
Total in excess of the lead width dimension at maximum material condition.
Dambar cannot be located on the lower radius of the foot.
(November, 2010, Version 1.7)
35
AMIC Technology, Corp.
A29L004 Series
Package Information
PLCC 32L Outline Dimension
unit: inches/mm
H
D
D
13
5
14
4
1
32
20
30
29
21
b
e
b
1
GE
y
θ
GD
Dimensions in inches
Dimensions in mm
Symbol
Min
-
Nom
-
Max
0.134
-
Min
Nom
-
Max
A
A1
A2
b1
b
-
3.40
-
0.0185
0.105
0.026
0.016
0.008
0.547
0.447
0.044
0.490
0.390
0.585
0.485
0.075
-
-
0.47
2.67
0.66
0.41
0.20
13.89
11.35
1.12
12.45
9.91
14.86
12.32
1.91
-
-
0.110
0.028
0.018
0.010
0.550
0.450
0.050
0.510
0.410
0.590
0.490
0.090
-
0.115
0.032
0.021
0.014
0.553
0.453
0.056
0.530
0.430
0.595
0.495
0.095
0.003
10°
2.80
0.71
0.46
0.254
13.97
11.43
1.27
12.95
10.41
14.99
12.45
2.29
-
2.93
0.81
0.54
0.35
14.05
11.51
1.42
13.46
10.92
15.11
12.57
2.41
0.075
10°
C
D
E
e
GD
GE
HD
HE
L
y
θ
0°
-
0°
-
Notes:
1. Dimensions D and E do not include resin fins.
2. Dimensions GD & GE are for PC Board surface mount pad pitch
design reference only.
(November, 2010, Version 1.7)
36
AMIC Technology, Corp.
A29L004 Series
Package Information
TSOP 32L TYPE I (8 X 20mm) Outline Dimensions
unit: inches/mm
D
θ
L
L
E
H
D
Detail "A"
Detail "A"
y
S
b
Dimensions in inches
Dimensions in mm
Symbol
Min
-
Nom
Max
Min
Nom
Max
A
A1
A2
b
-
0.047
0.006
0.041
0.011
0.008
0.728
0.319
-
-
1.20
0.15
1.05
0.27
0.20
18.50
8.10
0.002
0.037
0.007
0.004
0.720
-
-
0.039
0.009
-
0.05
0.95
0.18
0.11
18.30
-
-
1.00
0.22
-
c
D
E
0.724
0.315
0.020 BSC
0.787
0.020
0.032
-
18.40
8.00
0.50 BSC
20.00
0.50
0.80
-
e
HD
L
0.779
0.795
0.024
-
19.80
20.20
0.60
-
0.016
0.40
LE
S
-
-
-
-
0.020
0.003
5°
0.50
0.08
5°
y
-
-
-
-
-
-
θ
0°
0°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
(November, 2010, Version 1.7)
37
AMIC Technology, Corp.
A29L004 Series
Package Information
sTSOP 32L TYPE I (8 X 13.4mm) Outline Dimensions
unit: inches/mm
θ
L
L
E
D
1
D
Detail "A"
Detail "A"
0.076MM
S
b
SEATING PLANE
Dimensions in inches
Dimensions in mm
Symbol
Min
-
Nom
-
Max
Min
Nom
-
Max
-
A
A1
A2
b
0.049
-
1.25
-
-
-
0.002
0.037
0.007
0.05
0.95
0.17
0.039
0.008
0.041
0.009
1.00
1.05
0.23
0.158
8.10
0.20
c
0.0056 0.0059 0.0062 0.142
0.150
8.00
E
0.311
0.315
0.020 TYP
0.528
0.319
7.90
e
0.50 TYP
13.40
11.80
0.50
D
D1
L
0.520
0.461
0.012
0.535
0.469
0.028
13.20
11.70
0.30
13.60
11.90
0.70
0.465
0.020
LE
S
0.0275 0.0315 0.0355 0.700
0.0109 TYP
0.800
0.278 TYP
3°
0.900
θ
0°
3°
5°
0°
5°
Notes:
1. The maximum value of dimension D1 includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
(November, 2010, Version 1.7)
38
AMIC Technology, Corp.
A29L004 Series
Package Information
sTSOP 32L TYPE I (8 X 14mm) Outline Dimensions
unit: inches/mm
Pin1
Gage Plane
θ
L
D
1
Detail "A"
D
Detail "A"
b
e
y
Dimensions in inches
Dimensions in mm
Symbol
Min
-
Nom
Max
Min
Nom
-
Max
-
-
-
A
A1
A2
b
0.047
0.006
0.041
1.20
0.15
1.05
0.27
0.21
8.10
-
-
0.002
0.037
0.05
0.95
0.17
0.10
7.90
-
0.039
1.00
0.22
-
0.0067 0.0087 0.0106
c
0.004
0.311
-
-
0.0083
0.319
-
E
e
0.315
0.0197
0.551
0.488
0.024
-
8.00
0.50
14.00
12.40
0.60
-
D
D1
L
0.543
0.484
0.020
0.000
0°
0.559
0.492
0.028
0.003
5°
13.80
12.30
0.50
0.00
0°
14.20
12.50
0.70
0.076
y
θ
3°
3°
5°
Notes:
1. Dimension E does not include mold flash.
3. Dimension D1 does not include interlead flash.
4. Dimension b does not include dambar protrusion.
(November, 2010, Version 1.7)
39
AMIC Technology, Corp.
相关型号:
©2020 ICPDF网 联系我们和版权申明