AS7C4098-12 [ALSC]

5V/3.3V 256K x 16 CMOS SRAM; 5V / 3.3V 256K ×16的CMOS SRAM
AS7C4098-12
型号: AS7C4098-12
厂家: ALLIANCE SEMICONDUCTOR CORPORATION    ALLIANCE SEMICONDUCTOR CORPORATION
描述:

5V/3.3V 256K x 16 CMOS SRAM
5V / 3.3V 256K ×16的CMOS SRAM

静态存储器
文件: 总10页 (文件大小:235K)
中文:  中文翻译
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AS7C4098  
AS7C34098  
January 2005  
®
5V/3.3V 256K × 16 CMOS SRAM  
Features  
• AS7C4098 (5V version)  
• Low power consumption: STANDBY  
• AS7C34098 (3.3V version)  
• Industrial and commercial temperature  
• Organization: 262,144 words × 16 bits  
• Center power and ground pins  
• High speed  
- 10/12/15/20 ns address access time  
- 5/6/7/8 ns output enable access time  
• Low power consumption: ACTIVE  
- 1375 mW (AS7C4098)/max @ 12 ns  
- 576 mW (AS7C34098)/max @ 10 ns  
- 110 mW (AS7C4098)/max CMOS  
- 72 mW (AS7C34098)/max CMOS  
• Individual byte read/write controls  
• Easy memory expansion with CE, OE inputs  
• TTL- and CMOS-compatible, three-state I/O  
• 44-pin JEDEC standard packages  
- 400-mil SOJ  
- TSOP 2  
• ESD protection 2000 volts  
• Latch-up current 100 mA  
Logic block diagram  
Pin arrangement for SOJ and TSOP 2  
44-pin (400 mil) SOJ  
TSOP2  
A0  
A1  
A2  
V
CC  
A0  
A1  
A2  
A3  
A4  
CE  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
A17  
1024 × 256 × 16  
A3  
GND  
2
A16  
A4  
3
A15  
Array  
(4,194,304)  
A6  
4
OE  
A7  
A8  
5
UB  
6
LB  
A12  
A13  
I/O16  
I/O15  
I/O14  
I/O13  
GND  
VCC  
I/O12  
I/O11  
I/O10  
I/O1  
7
I/O2  
I/O3  
I/O4  
8
9
I/O1–I/O8  
I/O9–I/O16  
I/O  
buffer  
Control circuit  
10  
11  
12  
13  
14  
15  
VCC  
GND  
I/O5  
I/O6  
I/O7  
Column decoder  
WE  
I/O8  
WE  
A5  
16  
17  
18  
19  
20  
21  
22  
29  
28  
27  
26  
I/O9  
NC  
A14  
A13  
A12  
A11  
A10  
UB  
OE  
LB  
CE  
A6  
A7  
25  
24  
23  
A8  
A9  
Selection guide  
–10  
10  
5
–12  
–15  
15  
–20  
Unit  
ns  
Maximum address access time  
12  
6
20  
8
Maximum output enable access time  
7
ns  
AS7C4098  
AS7C34098  
AS7C4098  
AS7C34098  
250  
130  
20  
220  
110  
20  
180  
100  
20  
mA  
mA  
mA  
mA  
Maximum operating current  
160  
Maximum CMOS standby current  
20  
20  
20  
20  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 1 of 10  
Copyright © Alliance Semiconductor. All rights reserved.  
AS7C4098  
AS7C34098  
®
Functional description  
The AS7C4098 and AS7C34098 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices  
organized as 262,144 words × 16 bits. They are designed for memory applications where fast data access, low power, and  
simple interfacing are desired.  
Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 5/6/7/8 ns are  
AA RC WC  
OE  
ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank  
memory systems.  
When CE is High the device enters standby mode. The standard AS7C4098/AS7C34098 is guaranteed not to exceed 110/  
72mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip  
enable (CE). Data on the input pins I/O1–I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To  
avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or  
write enable (WE).  
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) High. The chip  
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or  
write enable is active, output drivers stay in high-impedance mode.  
These devices provide multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to  
be written and read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits, I/O9–I/O16.  
All chip inputs and outputs are TTL- and CMOS-compatible, and operation is from either a single 5V (AS7C4098) or 3.3V  
(AS7C34098) supply. Both devices are available in the JEDEC standard 400-mL, 44-pin SOJ and TSOP 2 packages.  
Absolute maximum ratings  
Parameter  
Device  
Symbol  
Min  
–0.50  
–0.50  
–0.50  
Max  
+7.0  
+5.0  
Unit  
V
AS7C4098  
AS7C34098  
V
V
V
t1  
t1  
t2  
D
Voltage on V relative to GND  
CC  
V
Voltage on any pin relative to GND  
Power dissipation  
V
+0.50  
V
CC  
P
T
1.5  
W
Storage temperature  
–65  
–55  
+150  
+125  
±20  
°C  
°C  
mA  
stg  
bias  
Ambient temperature with V applied  
T
CC  
DC current into outputs (low)  
I
OUT  
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and  
functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Truth table  
CE  
H
WE  
X
OE  
X
LB  
X
X
H
L
UB  
X
X
H
H
L
I/O1–I/O8  
I/O9–I/O16  
Mode  
Standby (I , I  
High Z  
High Z  
)
SB SB1  
L
H
H
High Z  
High Z  
High Z  
Output disable (I  
)
CC  
L
X
X
D
OUT  
L
L
H
L
L
H
L
High Z  
D
D
Read (I  
)
CC  
OUT  
OUT  
L
D
OUT  
L
H
L
D
High Z  
IN  
X
H
L
High Z  
D
D
Write (I  
)
IN  
IN  
CC  
L
D
IN  
Key: X = Don’t care, L = Low, H = High.  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 2 of 10  
AS7C4098  
AS7C34098  
®
Recommended operating conditions  
Parameter  
Symbol  
(12/15/20)  
Min Typical  
Max  
5.5  
Unit  
V
AS7C4098  
AS7C34098  
AS7C34098  
AS7C4098  
AS7C34098  
V
4.5  
3.15  
3.0  
2.2  
2.0  
–0.5  
0
5.0  
3.3  
3.3  
CC  
Supply voltage  
Input voltage  
V
(10)  
3.6  
V
CC  
V
(12/15/20)  
3.6  
V
CC  
V
V
V
V
+ 0.5  
V
IH  
CC  
CC  
+ 0.5  
V
IH  
1
V
0.8  
V
IL  
commercial  
Ambient operating temperature  
industrial  
T
70  
85  
°C  
°C  
A
T
–40  
A
1 VIL min = –1.0V for pulse width less than 5ns.  
DC operating characteristics (over the operating range)1  
–10  
–12  
–15  
–20  
Parameter Symbol  
Test conditions  
Min Max Min Max Min Max Min Max Unit  
AS7C4098/  
AS7C34098  
Input leakage  
current  
V
= Max  
CC  
|I |  
1
1
1
1
µA  
LI  
V
= GND to V  
IN CC  
V
= Max  
CC  
AS7C4098/  
AS7C34098  
Output leakage  
current  
CE = V or OE = V  
IH IH  
|I  
|
1
1
1
1
µA  
LO  
or WE = V  
IL  
V
= GND to V  
I/O  
CC  
Operating  
power supply  
current  
V
= Max  
AS7C4098  
250  
130  
220  
110  
180 mA  
100 mA  
CC  
I
Min cycle, 100% duty  
CE = V , I = 0mA  
CC  
AS7C34098  
160  
IL OUT  
AS7C4098  
AS7C34098  
AS7C4098  
60  
60  
60  
20  
60  
60  
20  
60 mA  
60 mA  
20 mA  
V
= Max  
CC  
I
SB  
CE = V , f = Max  
IH  
Standby power  
supply current  
V
= Max  
CC  
I
CE V – 0.2V, V V  
SB1  
CC IN CC  
AS7C34098  
20  
20  
20  
20 mA  
– 0.2V or V 0.2V, f = 0  
IN  
V
V
I
= 8 mA, V = Min  
AS7C4098/  
AS7C34098  
0.4  
0.4  
0.4  
0.4  
V
V
OL  
OL  
CC  
Output voltage  
I
= –4 mA, V = Min  
2.4  
2.4  
2.4  
2.4  
OH  
OH  
CC  
Capacitance (f = 1MHz, T = 25° C, V = NOMINAL)2  
a
CC  
Signals  
Parameter  
Input capacitance  
I/O capacitance  
Symbol  
Test conditions  
= 0V  
Max  
Unit  
C
A, CE, WE, OE, UB, LB  
I/O  
V
6
8
pF  
pF  
IN  
IN  
C
V
= V  
= 0V  
OUT  
I/O  
IN  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 3 of 10  
AS7C4098  
AS7C34098  
®
Read cycle (over the operating range)3,9  
–10  
–12  
–15  
–20  
Parameter  
Read cycle time  
Symbol  
Min Max Min Max Min Max Min Max Unit Notes  
t
10  
3
0
0
0
0
10  
10  
5
12  
3
3
0
0
0
12  
12  
6
15  
3
0
0
0
0
15  
15  
7
20  
3
0
0
0
0
20  
20  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RC  
AA  
Address access time  
t
Chip enable (CE) access time  
Output enable (OE) access time  
Output hold from address change  
CE Low to output in low Z  
CE High to output in higfch Z  
OE Low to output in low Z  
OE High to output in high Z  
LB, UB access time  
t
ACE  
t
OE  
OH  
t
5
t
4, 5  
4, 5  
4, 5  
4, 5  
CLZ  
CHZ  
t
5
6
7
9
t
OLZ  
OHZ  
t
5
6
7
9
t
5
6
7
8
BA  
LB, UB Low to output in low Z  
LB, UB High to output in high Z  
Power up time  
t
BLZ  
BHZ  
t
5
6
7
9
t
t
5
5
PU  
PD  
Power down time  
10  
12  
15  
20  
Key to switching waveforms  
Rising input  
Falling input  
tRC  
Undefined/don’t care  
Read waveform 1 (address controlled)6,7,9  
Address  
tAA  
tOH  
Previous data valid  
tOH  
DataOUT  
Data valid  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 4 of 10  
AS7C4098  
AS7C34098  
®
Read waveform 2 (CE, OE, UB, LB controlled)6,8,9  
tRC  
Address  
tAA  
OE  
tOHZ  
tOE  
tOH  
tOLZ  
CE  
tACE  
tLZ  
tCHZ  
LB, UB  
tBA  
tBHZ  
tBLZ  
DataOUT  
Data valid  
Write cycle (over the operating range)11  
–10  
–12  
–15  
–20  
Parameter  
Write cycle time  
Symbol Min Max Min Max Min Max Min Max Unit Note  
t
t
t
10  
7
5
12  
8
15  
10  
10  
0
7
20  
12  
12  
0
9
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CW  
AW  
Chip enable (CE) to write end  
Address setup to write end  
Address setup time  
7
8
t
0
0
AS  
Write pulse width (OE = High)  
Write pulse width (OE = Low)  
Write recovery time  
t
t
7
8
10  
15  
0
12  
20  
0
WP1  
WP2  
10  
0
12  
0
t
WR  
Address hold from end of write  
Data valid to write end  
t
0
0
0
0
AH  
t
5
6
7
9
DW  
Data hold time  
t
0
0
6
0
0
4, 5  
4, 5  
4, 5  
4, 5  
DH  
WZ  
OW  
Write enable to output in High-Z  
Output active from write end  
Byte enable Low to write end  
t
0
0
0
0
t
3
3
3
3
t
7
8
10  
12  
BW  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 5 of 10  
AS7C4098  
AS7C34098  
®
Write waveform 1(WE controlled)10,11  
tWC  
tAH  
tWR  
Address  
tCW  
tBW  
tAW  
CE  
LB, UB  
tAS  
tWP  
WE  
tDW  
tDH  
Data valid  
DataIN  
tWZ  
tOW  
DataOUT  
Data undefined  
High Z  
Write waveform 2 (CE controlled)10,11  
tWC  
tAH  
tWR  
Address  
tAS  
tCW  
CE  
tAW  
tBW  
LB, UB  
WE  
tWP  
tDW  
tDH  
Data valid  
High Z  
DataIN  
DataOUT  
tCLZ  
High Z  
tWZ  
Data undefined  
tOW  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 6 of 10  
AS7C4098  
AS7C34098  
®
Write waveform 3 10,11  
tWC  
tAH  
tWR  
Address  
tAS  
tCW  
CE  
tAW  
tBW  
LB, UB  
WE  
tWP  
tDW  
Data valid  
tDH  
DataIN  
tWZ  
DataOUT  
Data undefined  
High Z  
High Z  
AC test conditions  
- Output load: see Figure B or Figure C.  
168  
- Input pulse level: GND to 3.0V. See Figure A.  
- Input rise and fall times: 2 ns. See Figure A.  
- Input and output timing reference levels: 1.5V.  
Thevenin equivalent:  
+5V  
+1.728V (5V and 3.3V)  
+3.3V  
DOUT  
DOUT  
480  
320  
+3.0V  
DOUT  
350  
90%  
10%  
90%  
10%  
255  
C13  
C13  
GND  
2 ns  
GND  
Figure B: 5V Output load  
GND  
Figure C: 3.3V Output load  
Figure A: Input pulse  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.  
This parameter is sampled, but not 100% tested.  
For test conditions, see AC Test Conditions, Figures A, B, C.  
t
CLZ and tCHZ are specified with CL = 5pF as in Figure C. Transition is measured ±500mV from steady-state voltage.  
This parameter is guaranteed, but not tested.  
WE is High for read cycle.  
CE and OE are Low for read cycle.  
Address valid prior to or coincident with CE transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 Not applicable.  
13 C = 30pF, except on High Z and Low Z parameters, where C = 5pF.  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 7 of 10  
AS7C4098  
AS7C34098  
®
Typical DC and AC characteristics12  
Normalized supply current ICC, ISB  
Normalized supply current ICC, ISB  
vs. ambient temperature Ta  
Normalized supply current ISB1  
vs. supply voltage VCC  
vs. ambient temperature Ta  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
625  
25  
ICC  
VCC = VCC(NOMINAL)  
ICC  
5
1
ISB  
ISB  
0.2  
0.04  
MIN  
NOMINAL  
–55  
–10  
35  
80  
–55  
–10  
35  
80  
MAX  
125  
125  
Supply voltage (V)  
Ambient temperature (  
°
C)  
Ambient temperature (°C)  
Normalized access time tAA  
vs. supply voltage VCC  
Normalized access time tAA  
vs. ambient temperature Ta  
Normalized supply current ICC  
vs. cycle frequency 1/tRC, 1/tWC  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Ta = 25  
°
C
VCC = VCC(NOMINAL)  
VCC = VCC(NOMINAL)  
Ta = 25° C  
MIN  
NOMINAL  
–55  
–10  
35  
80  
0
25  
50  
75  
MAX  
125  
100  
Supply voltage (V)  
Ambient temperature (°C)  
Cycle frequency (MHz)  
Output source current IOH  
vs. output voltage VOH  
Output sink current IOL  
vs. output voltage VOL  
Typical access time change tAA  
vs. output capacitive loading  
140  
120  
100  
80  
140  
120  
100  
80  
35  
30  
25  
20  
15  
10  
5
VCC = VCC(NOMINAL)PL  
VCC = VCC(NOMINAL)  
VCC = VCC(NOMINAL)  
Ta = 25  
°
C
Ta = 25° C  
60  
60  
40  
40  
20  
20  
0
0
0
0
0
0
250  
500  
750  
VCC  
VCC  
1000  
Output voltage (V)  
Output voltage (V)  
Capacitance (pF)  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 8 of 10  
AS7C4098  
AS7C34098  
®
Package dimensions  
c
44 434241403938373635343332313029282726252423  
44-pin TSOP 2  
Min (mm) Max (mm)  
A
1.2  
He  
e
44-pin TSOP 2  
A
0.05  
0.95  
0.15  
1.05  
1
A
2
b
c
0.30  
0.45  
1 2 3 4 5 6 7 8 9 101112131415161718 19202122  
d
0.21  
0.12  
d
e
18.31  
10.06  
11.68  
18.52  
10.26  
11.94  
H
e
l
A2  
A
E
l
0.80 (typical)  
0–5°  
A1  
0.40  
0.60  
b
E
D
e
44-pin SOJ 400 mils  
E1  
A
E2  
44-pin SOJ  
B
Min(mils) Max(mils)  
A
A1  
A2  
B
0.128  
0.025  
0.105  
0.026  
0.015  
0.007  
1.120  
0.148  
-
Pin 1  
A1  
c
0.115  
0.032  
0.020  
0.013  
1.130  
A2  
b
E
Seating  
Plane  
b
c
D
E
0.370 NOM  
E1  
E2  
e
0.395  
0.435  
0.405  
0.445  
0.050 NOM  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 9 of 10  
AS7C4098  
AS7C34098  
®
Ordering Codes  
Package  
Version  
10 ns  
NA  
12 ns  
15 ns  
20 ns  
5V commercial  
5V industrial  
AS7C4098-12JC  
AS7C4098-12JI  
AS7C34098-12JC  
AS7C34098-12JI  
AS7C4098-12TC  
AS7C4098-12TI  
AS7C34098-12TC  
AS7C34098-12TI  
AS7C4098-15JC  
AS7C4098-15JI  
AS7C34098-15JC  
AS7C34098-15JI  
AS7C4098-15TC  
AS7C4098-15TI  
AS7C34098-15TC  
AS7C34098-15TI  
AS7C4098-20JC  
AS7C4098-20JI  
AS7C34098-20JC  
AS7C34098-20JI  
AS7C4098-20TC  
AS7C4098-20TI  
AS7C34098-20TC  
AS7C34098-20TI  
NA  
SOJ  
3.3V commercial AS7C34098-10JC  
3.3V industrial  
5V commercial  
5V industrial  
NA  
NA  
NA  
TSOP 2  
Note:  
3.3V commercial AS7C34098-10TC  
3.3V industrial NA  
Add suffix “N” to the above part number for lead free devices, Ex. AS7C4098-12JCN  
Part numbering system  
AS7C  
X
4098  
–XX  
J or T  
X
N
Voltage:  
Packages:  
Temperature ranges:  
Device Access  
number time  
SRAM prefix Blank: 5V CMOS  
3: 3.3V CMOS  
J: SOJ 400 mil C: Commercial, 0°C to 70°C Lead free device  
T: TSOP 2 I: Industrial, –40°C to 85°C  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 10 of 10  
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The data contained herein represents Alliance’s best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under  
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