ALD114804APC [ALD]
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY; QUAD /双N沟道耗尽型EPAD匹配的一对MOSFET阵列
| 型号： | ALD114804APC |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY |
| 文件： | 总2页 (文件大小：419K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
ADVANCED
LINEAR
®
e
EPAD
A
DEVICES, INC.
ALD114804/ALD114804A/ALD114904/ALD114904A
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
MATCHED PAIR MOSFET ARRAY
V
= -0.4V
GS(th)
GENERAL DESCRIPTION
APPLICATIONS
ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-
Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
• Functional replacement of Form B (NC) relays
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage (<0.2V) analog and
digital circuits
• Sub-threshold biased and operated circuits
• Zero power fail safe circuits in alarm systems
• Backup battery circuits
• Power failure and fail safe detector
• Source followers and high impedance buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for
exceptional device electrical characteristics matching. As these devices are on
the same monolithic chip, they also exhibit excellent temperature tracking char-
acteristics. They are versatile as design components for a broad range of analog
applications, such as basic building blocks for current sources, differential ampli-
fier input stages, transmission gates, and multiplexer applications.
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Discrete analog switches and multiplexers
• Discrete voltage comparators
Besides matched pair electrical characteristics, each individual MOSFET also
exhibits well controlled parameters, enabling the user to depend on tight design
limits corresponding to well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are suitable for switching and amplifying applica-
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems
where low input bias current, low input capacitance and fast switching speed are
desired. These devices exhibit well controlled turn-off and sub-threshold
charactersitics and therefore can be used in designs that depend on sub-thresh-
old characteristics.
PIN CONFIGURATION
ALD114804
-
-
V
V
1
2
3
4
5
6
7
8
N/C*
16
15
14
13
12
11
10
9
N/C*
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in
precision applications which require very high current gain, beta, such as current
mirrors and current sources. A sample calculation of the DC current gain at a
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is
recommended that the user, for most applications, connect V+ pin to the most
positive voltage potential (or left open unused) and V- and N/C pins to the most
negative voltage potential in the system. All other pins must have voltages within
these voltage limits.
G
G
N2
N1
M 2
M 1
D
N1
D
N2
+
+
V
V
S
12
-
-
V
S
V
34
D
N3
D
N4
N4
M 4
M 3
FEATURES
G
G
N3
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -0.4V +/- 0.02V
N/C*
N/C*
-
-
V
V
• Nominal R
V
=0.0V of 5.4KΩ
DS(ON) @ GS
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
PC, SC PACKAGES
• V
match (V ) — 20mV
OS
GS(th)
• High input impedance — 1012Ω typical
ALD114904
V
• Positive, zero, and negative V
temperature coefficient
GS(th)
-
-
V
• DC current gain >108
1
8
N/C*
N/C*
• Low input and output leakage currents
G
D
G
D
2
3
4
7
6
5
N2
N1
ORDERING INFORMATION
M 1
M 2
N1
N2
-
Operating Temperature Range*
0°C to +70°C 0°C to +70°C
8-Pin
-
S
V
V
12
16-Pin
16-Pin
SOIC
8-Pin
SOIC
PA, SA PACKAGES
Plastic Dip
Plastic Dip
Package
Package
Package
Package
*N/C pins are internally connected.
Connect to V- to reduce noise
ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA
ALD114804 PC ALD114804SC ALD114904PA ALD114904SA
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V
T = 25°C unless otherwise specified
A
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD114808A / ALD114908A ALD110848 / ALD114908
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test Condition
Gate Threshold Voltage
V
V
-0.42
-0.40
-0.38
-0.44
-0.40
-0.36
V
I
V
=1µA
DS
GS(th)
OS
= 0.1V
DS
Offset Voltage
2
5
5
7
5
20
mV
I
=1µA
DS
V
-V
GS1 GS2
V
-V
GS1 GS2
Tempco
∆V
∆V
µV/ °C
mV/ °C
V
= V
DS1 DS2
OS
GateThreshold Tempco
On Drain Current
-1.7
0.0
+1.6
-1.7
0.0
+1.6
I
I
I
= 1µA
= 20µA, V
= 40µA
GS(th)
D
D
D
= 0.1V
DS
I
12.0
3.0
12.0
3.0
mA
V
V
V
= +9.1V
= +3.6V
= +5V
DS (ON)
GS
GS
DS
Forward Transconductance
G
FS
1.4
1.4
mmho
V
V
=+3.6 V
= +8.6V
GS
DS
Transconductance Mismatch
Output Conductance
∆G
FS
1.8
68
1.8
68
%
G
OS
µmho
VGS =+3.6V
V
= +8.6V
DS
Drain Source On Resistance
Drain Source On Resistance
R
R
500
5.4
10
500
5.4
10
Ω
V
= 0.1V
DS (ON)
DS (ON)
DS
VGS = +3.6V
KΩ
%
V
V
= 0.1V
= +0.0V
DS
GS
Drain Source On Resistance
Tolerance
∆R
DS (ON)
Drain Source On Resistance
Mismatch
∆R
0.5
0.5
%
V
DS (ON)
Drain Source Breakdown
Voltage
BV
DSX
10
10
I
= 1.0µA
DS
V
= -1.4V
GS
Drain Source Leakage Current1
I
10
3
100
4
10
3
100
4
pA
nA
V
= -1.4V, V =+5V
DS
= 125°C
DS (OFF)
GS
T
A
Gate Leakage Current1
I
30
1
30
1
pA
nA
V
= 0V V
= +10V
GSS
DS
GS
T
A
=125°C
Input Capacitance
C
C
2.5
0.1
10
2.5
0.1
10
pF
pF
ns
ISS
Transfer Reverse Capacitance
Turn-on Delay Time
RSS
+
+
t
V
V
= 5V R = 5KΩ
L
on
off
Turn-off Delay Time
t
10
60
10
60
ns
= 5V R = 5KΩ
L
Crosstalk
dB
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
2
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