ALD114813PC [ALD]
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS; QUAD /双N沟道耗尽型EPAD匹配的一对MOSFET阵列
| 型号： | ALD114813PC |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS |
| 文件： | 总2页 (文件大小：419K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
ADVANCED
LINEAR
®
e
EPAD
A
DEVICES, INC.
ALD114813/ALD114913
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
MATCHED PAIR MOSFET ARRAYS
V
= -1.3V
GS(th)
APPLICATIONS
GENERAL DESCRIPTION
• Functional replacement of Form B (NC) relay
• Zero power fail safe circuits
• Backup battery circuits
• Power failure detector
• Fail safe signal detector
• Source followers and buffers
• Precision current mirrors
• Precision current sources
• Capacitives probes
ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched
at the factory using ALD’s proven EPAD CMOS technology. These devices are
intended for low voltage, small signal applications. They are excellent functional
replacements for normally-closed relay applications, as they are normally on (con-
ducting) without any power applied, but could be turned off or modulated when
system power supply is turned on. These MOSFETS have the unique character-
istics of, when the gate is grounded, operating in the resistance mode for low
drain voltage levels and in the current source mode for higher voltage levels and
providing a constant drain current.
• Sensor interfaces
• Charge detectors
• Charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors
• Sample and Hold
• Alarm systems
• Current multipliers
• Analog switches
These MOSFETS are designed for exceptional device electrical characteristics
matching. As these devices are on the same monolithic chip, they also exhibit
excellent temperature tracking characteristics. They are versatile as design com-
ponents for a broad range of analog applications, and they are basic building
blocks for current sources, differential amplifier input stages, transmission gates,
and multiplexer applications. Besides matched pair electrical characteristics, each
individual MOSFET also exhibits well controlled parameters, enabling the user to
depend on tight design limits. Even units from different batches and different date
of manufacture have correspondingly well matched characteristics.
• Analog multiplexers
• Voltage comparators
• Level shifters
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying appli-
cations in single 1.5V to +/-5V systems where low input bias current, low input
capacitance and fast switching speed are desired. These devices exhibit well
controlled turn-off and sub-threshold charactersitics and therefore can be used in
designs that depend on sub-threshold characteristics.
PIN CONFIGURATION
ALD114813
-
-
The ALD114813/ALD114913 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA= 100,000,000. It is recommended that the user, for
most applications, connect V+ pin to the most positive voltage potential (or left
open unused) and V- and N/C pins to the most negative voltage potential in the
system. All other pins must have voltages within these voltage limits.
V
V
1
2
3
4
5
6
7
8
N/C*
16
15
14
13
12
11
10
9
N/C*
G
N2
G
N1
M 2
M 1
D
D
N1
N2
+
+
V
V
S
12
-
-
V
S
V
34
FEATURES
D
D
N3
N4
N4
M 4
M 3
• Depletion mode (normally ON) without power
• Precision Gate Threshold Voltages: -1.30V +/- 0.04V
G
G
N3
N/C*
N/C*
-
-
• Nominal R
@V =0.0V of 1.3KΩ
DS(ON)
GS
V
V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
PC, SC PACKAGES
ALD114913
• V
match (V ) — 20mV
OS
GS(th)
• High input impedance — 1012Ω typical
• Positive, zero, and negative V
temperature coefficient
GS(th)
• DC current gain >108
-
-
V
V
1
2
3
4
8
7
6
5
N/C*
N/C*
• Low input and output leakage currents
G
N2
G
N1
ORDERING INFORMATION
M 1
M 2
D
N1
D
N2
Operating Temperature Range*
0°C to +70°C 0°C to +70°C
-
-
S
12
V
V
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
ALD114813PC ALD114813SC ALD114913PA
ALD114913SA
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
T = 25°C unless otherwise specified
A
ALD114813/ALD114913
Parameter
Symbol
Min
Typ
Max
-1.26
Unit
Test Conditions
I =1µA
DS
Gate Threshold Voltage
V
V
-1.34
-1.30
V
GS(th)
V
= 0.1V
DS
I =1µA
DS
Offset Voltage
7
5
20
mV
OS
V
-V
GS(th)1 GS(th)2
Offset Voltage Tempco
TC
TC
µV/ °C
mV/ °C
V
= V
DS1 DS2
VOS
GateThreshold Voltage Tempco
-1.7
0.0
+1.6
I
D
I
D
I
D
= 1µA
= 20µA, V
= 40µA
VGS(th)
= 0.1V
DS
On Drain Current
I
12.0
3.0
mA
V
V
V
= +8.2 V
= +2.7V
= +5V
DS (ON)
GS
GS
DS
Forward Transconductance
G
FS
1.4
mmho
V
V
= +2.7V
= +7.7V
GS
DS
Transconductance Mismatch
Output Conductance
∆G
FS
1.8
68
%
G
OS
µmho
V
V
=+2.7V
= +7.7V
GS
DS
Drain Source On Resistance
Drain Source On Resistance
R
500
1.3
Ω
V
V
= 0.1V
= +2.7V
DS (ON)
DS (ON)
DS
GS
R
KΩ
V
V
= 0.1V
= +0.0V
DS
GS
Drain Source On Resistance
Tolerance
∆R
∆R
BV
I
7
%
%
V
DS (ON)
DS (ON)
DSX
Drain Source On Resistance
Mismatch
0.5
Drain Source Breakdown
Voltage
10
I
= 1.0µA
DS
V
= -2.3V
GS
Drain Source Leakage Current1
10
3
100
4
pA
nA
V
=-2.3V, V
=+5V
DS
DS (OFF)
GSS
GS
T
= 125°C
A
Gate Leakage Current1
I
30
1
pA
nA
V
= 0V V
= +10V
DS
GS
T
A
=125°C
Input Capacitance
C
C
2.5
0.1
pF
pF
ISS
Transfer Reverse Capacitance
RSS
+
+
Turn-on Delay Time
Turn-off Delay Time
t
t
10
10
60
ns
ns
dB
V
V
= 5V R = 5KΩ
L
on
= 5V R = 5KΩ
off
L
Crosstalk
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD114813/ALD114913
Advanced Linear Devices
2
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