ALD1123EPC [ALD]
QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY; QUAD /双EPAD精密匹配的一对N沟道MOSFET阵列
| 型号： | ALD1123EPC |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
| 文件： | 总8页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADVANCED
LINEAR
DEVICES, INC.
ALD1123E/ALD1121E
QUAD/DUAL EPAD® PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
FEATURES
BENEFITS
• Electrically Programmable Analog Device
CMOS Technology
• Operates from 2V, 3V, 5V to 10V
• Flexible basic circuit building block and design element
• Very high resolution -- average e-trim voltage
resolution of 0.1mV
• Precision matched electrically after packaging
• Simple, elegant single-chip user option
to trimming voltage/current values
• Excellent device matching characteristics with
or without additional electrical trim
• Remotely and electrically trim parameters on
circuits that are physically inaccessible
• Wide dynamic range -- current levels from 0.1µA
to 3000µA
• Usable in environmentally sealed circuits
• Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
• No mechanical moving parts -- high G-shock
tolerance
• Improved reliability, dependability, dust and
moisture resistance
• Cost and labor savings
• Small footprint for high board density
applications
• Proven, non-volatile CMOS technology
• Typical 10 years drift of less than 2mV
• Usable in voltage mode or current mode
• High input impedance -- 1012
Ω
• Very high DC current gain -- greater than 109
• Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68µA
PIN CONFIGURATION
ALD1123E
• Tight matching and tracking of on-resistance
between different devices with e-trim
M 1
M 2
• Wide dynamic resistance matching range
• Very low input currents and leakage currents
• Low cost, monolithic technology
• Application-specific or in-system programming modes
• Optional user software-controlled automation
• Optional e-trim of any standard/custom configuration
• Micropower operation
• Available in standard PDIP, SOIC and hermetic CDIP packages
• Suitable for matched-pair balanced circuit configuration
• Suitable for both coarse and fine trimming as well as matched
MOSFET array applications
1
2
3
4
5
6
7
8
P
G
D
S
16
15
14
13
12
11
10
9
S
D
N1
N1
N1
N2
N2
G
P
N2
-
V
N2
1, N1
S
N3
P
N4
D
N3
G
N4
D
S
G
P
N4
N3
-
V
N3
2, N4
M 4
M 3
ORDERING INFORMATION
Operating Temperature Range*
DC, PC, SC PACKAGE
0°C to +70°C
0°C to +70°C
PIN CONFIGURATION
ALD1121E
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
P
ALD1123E PC
ALD1123E SC
S
D
8
7
N1
1
2
N2
M 1
G
N1
N2
Operating Temperature Range*
D
G
N1
6
5
N2
3
4
0°C to +70°C
0°C to +70°C
M 2
-
V
N1,
8-Pin
Plastic Dip
Package
8-Pin
S
P
N2
SOIC
Package
DA, PA, SA PACKAGE
ALD1121E PA
ALD1121E SA
* Contact factory for industrial temperature range
© 2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
APPLICATIONS
GENERAL DESCRIPTION
®
• Precision PC-based electronic calibration
ALD1123E/ALD1121E are monolithic quad/dual EPAD (Electrically Program-
mable Analog Device) N-channel MOSFETs with electrically adjustable threshold
(turn-on) voltage. The ALD1123E/ALD1121E are precision matched and adjusted
(e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched
in electrical characteristics. The ALD1123E has four (4) separate source pins. SN1,
SN2 share a common substrate pin V-1 which has to be connected to the most
negative voltage potential. Likewise, SN3, SN4 share a common substrate pin V-2
which has to be connected to the negative voltage potential for SN3, SN4. The
ALD1121E has two (2) separate source pins (SN1, SN2). Both SN1, SN2 share a
common substrate pin 4 which has to be connected to the most negative voltage
potential.
• Automated voltage trimming or setting
• Remote voltage or current adjustment of
inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources
and current mirrors
• Electrically trimmed/calibrated current
sources
• Permanent precision preset voltage level
shifter
Using an ALD1123E/ALD1121E MOSFET array is simple and straight forward. The
MOSFETs function in electrical characteristics as n-channel MOSFETs except that
all the devices have exceptional matching to each other. For a given input voltage,
the threshold voltage of a MOSFET device determines its drain on-current, resulting
in an on-resistance characteristic that can be precisely preset and then controlled
by the input voltage very accurately. Since these devices are on the same monolithic
chip, they also exhibit excellent tempco matching characteristics.
• Low temperature coefficient voltage and/or
current bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down
circuits
• Microprocessor based process control systems
• Portable data acquisition systems
• Battery operated terminals and instruments
• Remote telemetry systems
These MOSFET devices have very low input currents, and as a result a very high
12
input impedance (>10
Ohm). The gate voltage from a control source can drive
many MOSFET inputs with practically no loading effects. Used in precision current
mirror or current multiplier applications, they can be used to provide a current source
over a 100 nA to 3 mA range, and with either a positive, negative or zero tempco.
• E-trim gain amplifiers
• Low level signal conditioning
• Sensor and transducer bias currents
• Neural networks
Optional EPAD Threshold Voltage Trimming By User
BLOCK DIAGRAM
The basic EPAD MOSFET device is a monotonically adjustable device which means
the device can normally be e-trimmed to increase in threshold voltage and to
decrease in drain-on current as a function of a given input bias voltage. Used as an
in-circuit element for trimming or setting a combination of voltage and/or current
characteristics, it can be e-trimmed remotely and automatically. Once e-trimmed,
the set voltage and current levels are stored indefinitely inside the device as a
nonvolatile stored charge, which is not affected during normal operation of the
device, even when power is turned off. A given EPAD device can be adjusted many
times to continually increase its threshold voltage. A pair of EPAD devices can also
be connected differentially such that onedevice is used to adjust a parameter in one
direction and the other device is used to adjust the same parameter in the other
direction.
ALD1121E
D
(7)
P
(5)
N2
P
(1)
D
(3)
N1
N2
N2
N1
(2)
G
(6)
G
N1
~
The ALD1123E/ALD1121E can be e-trimmed with the ALD EPAD programmer to
obtain the desired voltage and current levels. Or they can be e-trimmed as an active
in-system element in a user system, via user designed interface circuitry. PN1, PN2,
etc., are pins required for optional e-trim of respective MOSFET devices. If unused,
these pins are to be connected to V- or ground. For more information, see
Application Note AN1108.
M 1
M 2
-
S
N1
(4)
V
(4)
S
(8)
N2
BLOCK DIAGRAM
ALD1123E
P
(13)
D
(11)
N3
P
(1)
D
(3)
P
(9)
D
(7)
P
(5)
N4
D
(15)
N2
N1
N1
N3
N4
N4
G
N2
G
(2)
G
(10)
N3
(6)
G
(14)
N1
N2
M 2
M 3
M 4
M 1
~
~
S
(4)
-
S
(16)
S
(12)
N3
S
(8)
-
N1
N2
N4
V
(4)
V
(8)
1
2
ALD1123E/ALD1121E
Advanced Linear Devices
2
ABSOLUTE MAXIMUM RATINGS
+
-
-
Supply voltage, V referenced to V
-0.3V to +13.2V
±6.6V
0.3V to V+ +0.3V
600 mW
Supply voltage, V referenced to V
S
Differential input voltage range
Power dissipation
Operating temperature range PA, SA, PC, SC package
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
DA, DC package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
+
T
= 25°C V = +5.0V unless otherwise specified
A
ALD1123E
ALD1121E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Drain to Source Voltage 1
V
DS
10.0
10.0
V
Initial Threshold Voltage 2
E-trim Vt Range
V
t i
0.990
1.000
1.000
1.010
3.000
0.990
1.000
1.000
1.010
3.000
V
V
I
= 1µA T = 21°C
DS
A
V
t
Drain - Gate Connected
Voltage Tempco
TCV
-1.6
-0.3
0.0
-1.6
-0.3
0.0
mV/°C
mV/°C
mV/°C
mV/°C
I
D
I
D
I
D
I
D
= 5µA
DS
= 50µA
= 68µA
= 500µA
+2.7
+2.7
Initial Offset Voltage 3
V
OS i
1
5
5
1
5
5
mV
Tempco of V
TCV
µV/°C
V
= V
DS1 DS2
OS
OS
Differential Threshold Voltage 4 DV
2.000
-0.05
2.000
-0.05
V
t
Tempco of Differential
Threshold Voltage 4
Long Term Drift
TCDV
0.033
-0.02
-5
0.033
-0.02
-5
mV/°C
mV
t
∆V /∆t
1000 Hours
1000 Hours
t
Long Term Drift Match
Drain Source On Current
∆V /∆t
µV
t
I
3.0
3.0
mA
V
=V = 5V V = 0V
G D S
DS(ON)
DS(ON)
V = 1.0
t
Drain Source On Current 4
I
0.8
0.8
mA
V
=V = 5V V = 0V
G D S
V = 3.0
t
Initial Zero Tempco Voltage 3
Zero Tempco Current
V
1.52
68
1.52
68
V
V = 1.000V
t
ZTCi
I
µA
ZTC
Initial On-Resistance 3
On-Resistance Match
R
500
0.5
500
0.5
Ω
V
¡= 5V
V
DS
= 0.1V
ONi
GS
∆R
ON
%
NOTES:
1. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at
any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These parameters apply only when Vt of one or more of the devices are to be changed by user.
ALD1123E/ALD1121E
Advanced Linear Devices
3
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
+
T = 25°C V = +5.0V unless otherwise specified
A
ALD1123E
ALD1121E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Transconductance
gm
1.4
1.4
mA/V
V = 10V,V =V + 4.0
D G t
Transconductance Match
∆gm
25
6
25
µA/V
µA/V
µA/V
V = 10V,V =V + 4.0
D G t
Low Level Output
Conductance
g
g
6
V = V +0.5V
G t
OL
High Level Output
Conductance
68
5
68
5
V
= V +4.0V
OH
G t
Drain Off Leakage Current
Gate Leakage Current
I
400
400
4
pA
nA
D(OFF)
4
T
T
= 125°C
= 125°C
A
A
I
10
100
1
10
100
1
pA
nA
GSS
Input Capacitance
Cross Talk
C
ISS
25
60
25
60
pF
dB
f = 100KHz
Relaxation Time Constant 4
Relaxation Voltage 4
t
2
2
Hours
%
RLX
V
-0.3
-0.3
1.0V ≤ V ≤ 3.0V
RLX
t
E-TRIM CHARACTERISTICS
+
T = 25°C V = +5.0V unless otherwise specified
A
ALD1123E
ALD1121E
Typ
Test
Conditions
Parameter
Symbol
Min
Typ
Max
Min
1.000
Max
Unit
E-trim V Range 4
t
V
t
1.000
3.000
3.000
V
Resolution of V
t
E-trim Pulse Step 4
RV
t
0.1
1
0.1
1
mV
Change in V Per
t
∆V / N
t
0.5
0.5
mV/ pulse V = 1.0V
t
E-trim Pulse 4
0.05
0.05
V = 2.5V
t
E-trim Pulse Voltage 4
E-trim Pulse Current 4
Pulse Frequency 4
Vp
11.75
12.00
2
12.25
11.75
12.00
2
12.25
V
Ip
mA
ƒ pulse
50
50
KHZ
ALD1123E/ALD1121E
Advanced Linear Devices
4
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
20
15
+1.0
T
= +25°C
T
= +25°C
A
A
V
= +12V
V
V
= +12V
= +10V
GS
GS
GS
V
GS
= +10V
V
= + 8V
= + 6V
GS
10
5
0
V
GS
V
= +6V
GS
V
GS
= +8V
V
V
= + 4V
= + 2V
GS
GS
0
-1.0
0
2
4
6
8
10
12
-200 -160 -120 -80 -40
0
40 80 120 160 +200
DRAIN SOURCE ON VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
3.0
2.0
6
T
= +25°C
V
= 5V
A
G
V
V
= +5V
= +4V
V
= +5.0V
GS
GS
DS
5
4
V = 1.0V
t
3
2
V = 1.5V
t
V
= +3V
= +2V
GS
V = 2.0V
t
1.0
0
V = 2.5V
t
V
GS
1
0
V = 3.0V
t
V
GS
= +1V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
75
70
2.0
T
= +25°C
A
T
= +25°C
A
1.5
1.0
5.0
0
60
50
V
GS
V
DS
= V + 4.0V
t
= 10V
V
GS
V
DS
= V + 4.0V
t
= 5.0V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
ALD1123E/ALD1121E
Advanced Linear Devices
5
TYPICAL PERFORMANCE CHARACTERISTICS
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
12
10
4.0
3.0
2.0
V
GS
V
DS
= V + 0.5V
= 5.0V
V
DS
= V
I = 1.0
D µA
t
GS
V = 3.0V
t
8
6
V = 2.5V
t
V = 2.0V
t
V = 1.5V
t
1.0
V = 1.0V
t
4
2
0
-50
25
75
125
0
50
-25
100
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
DRAIN OFF LEAKAGE CURRENT I
vs. AMBIENT TEMPERATURE
DS
600
2.5
2.0
500
400
1.5
1.0
300
200
100
0
I
DS
0.5
0
-50
0
25
50
75
100
125
-25
-50 -25
25
50
75
100
125
0
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
10
100
T
= +25°C
A
V
GS
V
DS
= V + 4.0V
t
= 5.0V
90
80
70
5
60
50
40
V
GS
V
DS
= V + 0.5V
t
= 5.0V
0
-50
-25
0
25
50
75
100
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOTAGE (V)
AMBIENT TEMPERATURE (°C)
ALD1123E/ALD1121E
Advanced Linear Devices
6
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
50
5
4
Zero Temperature
Coefficient (ZTC)
ZTC
125°C
ZTC
125°C
-55°C
-25°C
125°C
3
2
0°C
{
V
t
= 1.2V
{
{
V
V
t
t
= 1.0V
= 1.4V
1
0
- 25°C
- 25°C
- 25°C
70°C
125°C
0
1.0
1.4
1.8
1.2
2.0
1.6
0
1
2
3
4
5
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
10000
1000
+10
+8
V
V
= R
• I
= +0.9V to +5.0V
DS
GS
ON DS(ON)
REPRESENTATIVE UNITS
+6
+4
+2
V
= 5.0V
DS
100
10
V
D
DS
0
-2
-4
I
V
GS
DS(ON)
1.0
-6
-8
S
V
= 0.5V
DS
0.1
-10
0.1
1.0
10
100
1000
10000
-50
-25
0
25
50
75
100
125
ON - RESISTANCE (KΩ)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
5
4
3
5
4
V
D
DS
V = 0.5V
DS
= +125°C
A
V = 1.000V
t
T
V
= V
DS
GS
I
V
DS(ON)
GS
T
= -55°C
A
S
3
2
1
V
DS
= 0.5V
T
= 0°C
A
T
= +25°C
A
V
T
= 5V
2
1
DS
= +25°C
T
= +50°C
A
A
V
T
= 5V
DS
= +125°C
V
= R
• I
DS
ON DS(ON)
T
= +125°C
A
A
0
0
1
0.1
10
100
1000
10000
0
1
2
3
4
5
DRAIN SOURCE ON CURRENT (µA)
OUTPUT VOLTAGE (V)
ALD1123E/ALD1121E
Advanced Linear Devices
7
TYPICAL PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
600
4
3
2
REPRESENTATIVE UNITS
500
400
1
0
300
200
100
0
-1
-2
-3
-4
I
GSS
-50
0
25
50
75
100
125
-25
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5.0
4.0
3.0
2.0
5
D
V
DS
-55°C ≤ T ≤ +125°C
A
2.5
+125°C
I
DS(ON)
V
GS
S
0
-2.5
-5
0.0V ≤ V
≤ 5.0V
DS
+25°C
1.0
1
10
100
1000
0.1
10
100
1000
1
10000
ON - RESISTANCE (KΩ)
DRAIN SOURCE ON CURRENT (µA)
ALD1123E/ALD1121E
Advanced Linear Devices
8
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