ALD1121EPAL [ALD]
QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY; QUAD /双EPAD®精密N沟道匹配的一对MOSFET阵列
| 型号： | ALD1121EPAL |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY |
| 文件： | 总14页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
A
L
D
DVANCED
INEAR
EVICES, INC.
®
e
EPAD
A
ALD1121E/ALD1123E
QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
BENEFITS
®
ALD1121E/ALD1123E are monolithic quad/dual EPAD (Electrically
• Precision matched electrically after
packaging
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1121E/ALD1123E are
precision matched and adjusted (e-trimmed) at the factory resulting in
quad/dual MOSFETs that are highly matched in electrical characteristics.
• Simple, elegant single-chip user option
to trim voltage/current values
• Excellent device matching characteristics
with or without additional electrical trim
The ALD1123E has four (4) separate source pins. S , S
share a
common substrate pin, V- , which has to be connected to the most
N1 N2
• Remotely and electrically trim parameters
1
on circuits that are physically inaccessible
negative voltage potential. Likewise, S , S share a common substrate
N3 N4
pin, V- , which has to be connected to the negative voltage potential for
2
S
, S . The ALD1121E has two (2) separate source pins (S , S ).
N3 N4
Both S , S
N1 N2
PIN CONFIGURATION
share a common substrate, pin 4, which has to be
N2
N1
connectedtothemostnegativevoltagepotential. Foragiveninputvoltage,
the threshold voltage of a MOSFET device determines its drain on-current,
resulting in an on-resistance characteristic that can be precisely preset and
then controlled by the input voltage very accurately.
ALD1121E
P
S
D
8
7
N1
1
2
N2
M 1
G
N1
N2
Using an ALD1121E/ALD1123E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. For
a given input voltage,thethresholdvoltageofaMOSFETdevicedetermines
itsdrainon-current, resultinginan on-resistancecharacteristicthatcanbe
precisely preset and then controlled by the input voltage very accurately.
Since these devices are on the same monolithic chip, they also exhibit
excellent tempco matching characteristics.
D
G
P
N1
6
5
N2
3
4
M 2
-
S
V
N1,
N2
TOP VIEW
SAL, PAL, DA PACKAGES
ALD1123E
M 1
M 2
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
1
2
3
4
5
6
7
8
P
G
D
S
16
15
14
13
12
11
10
9
S
N1
N1
N1
N2
Operating Temperature Range*
D
N2
0°C to +70°C
0°C to +70°C
-55°C to +125°C
G
P
N2
-
V
8-Pin SOIC
Package
8-Pin Plastic Dip
Package
8-Pin CERDIP
Package
N2
1, N1
S
P
N4
N3
D
N3
G
ALD1121ESAL
ALD1121EPAL
ALD1121EDA
N4
N4
D
S
G
P
N3
16-Pin SOIC
Package
16-Pin Plastic Dip
Package
16-Pin CERDIP
Package
-
V
N3
2, N4
M 4
M 3
ALD1123ESCL
ALD1123EPCL
ALD1123EDC
TOP VIEW
SCL, PCL, DC PACKAGES
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
BLOCK DIAGRAM
ALD1121E
ALD1123E
P
(13)
D
N3
(11)
P
(1)
D
N1
(3)
P
(9)
D
N4
(7)
P
(5)
N4
D
N2
(15)
N2
N1
N3
N4
D
(7)
P
N2
(5)
P
(1)
D
(3)
N1
N2
N1
G
(2)
N1
G
(10)
N3
G
(6)
G
(14)
N2
G
(6)
G (2)
N1
N2
~
M 2
M 3
M 4
M 1
~
~
M 1
M 2
-
S (4)
N1
S
N1
(4)
-
S
N2
(16)
S
N3
(12)
V
(4)
S
(8)
N2
-
S (8)
N4
V
(4)
V
(8)
1
2
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
These MOSFET devices have very low input currents and,
BENEFITS (cont.)
12
Ohm). The
as a result, a very high input impedance (>10
gatevoltagefromacontrolsourcecandrivemanyMOSFET
inputs with practically no loading effects. Used in precision
current mirror or current multiplier applications, they can
be used to provide a current source over a 100nA to 3mA
range, and with either a positive, negative, or zero tempco.
• Usable in environmentally sealed circuits
• No mechanical moving parts -- high G-shock
tolerance
• Improved reliability, dependability, dust and
moisture resistance
• Cost and labor savings
• Small footprint for high board density
applications
Optional EPAD Threshold Voltage Trimming by User
The basic EPAD MOSFET device is a monotonically
adjustable device, which means the device can normally
be e-trimmed to increase in threshold voltage and to
decrease in drain-on current as a function of a given input
bias voltage. Used as an in-circuit element for trimming or
setting a combination of voltage current and/or on-
resistance characteristics, it can be set up to be e-trimmed
remotely and automatically. Once e-trimmed, the set
voltage and current levels are stored indefinitely inside the
deviceasanonvolatilestoredcharge,whichisnotaffected
during normal operation of the device, even when power is
turned off. A given EPAD device can be adjusted many
times to continually increase its threshold voltage. A pair
of EPAD devices can also be connected differentially such
that one device is used to adjust a parameter in one
direction and the other device is used to adjust the same
parameter in the other direction.
FEATURES
• Electrically Programmable Analog Device
• Proven, non-volatile CMOS technology
• Operates from 2V, 3V, 5V to 10V
• Flexible basic circuit building block and design
element
• Very high resolution -- average e-trim voltage
resolution of 0.1mV
• Wide dynamic range -- current levels from 0.1µA
to 3000µA
• Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
• Typical 10-year drift of less than 2mV
• Usable in voltage mode or current mode
12
• High input impedance -- 10
Ω
The ALD1121E/ALD1123E can be e-trimmed with an ALD
EPAD programmer to obtain the desired voltage and
current levels. They can also be e-trimmed as an active in-
system element in a user system, via user designed
9
• Very high DC current gain -- greater than 10
• Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68µA
• Tight matching and tracking of on-resistance
between different devices with e-trim
interface circuitry. P , P , etc., are pins required for
N1 N2
optional e-trim of respective MOSFET devices. If unused,
these pins are to be connected to V- or ground. For more
information, see Application Note AN1108.
• Very low input currents and leakage currents
• Low cost, monolithic technology
• Application-specific or in-system programming modes
• Optional user software-controlled automation
• Optional e-trim of any standard/custom configuration
• Micropower operation
APPLICATIONS
• Precision PC-based electronic calibration
• Automated voltage trimming or setting
• Remote voltage or current adjustment of
inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources and
current mirrors
• Available in standard PDIP, SOIC and hermetic CDIP
packages
• Suitableformatched-pairbalancedcircuitconfiguration
• Suitable for both coarse and fine trimming, as well as
matched MOSFET array applications
• RoHS compliant
• Electrically trimmed/calibrated current sources
• Permanent precision preset voltage level shifter
• Low temperature coefficient voltage and/or current
bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down circuits
• Microprocessor based process control systems
• Portable data acquisition systems
• Battery operated terminals and instruments
• Remote telemetry systems
• E-trimmable gain amplifiers
• Low level signal conditioning
• Sensor and transducer bias currents
• Neural networks
ALD1121E/ALD1123E
Advanced Linear Devices
2 of 14
ABSOLUTE MAXIMUM RATINGS
+
Supply voltage, V
Supply voltage, V
-0.3V to +10.6V
±5.3V
referenced to V-
S referenced to V-
Differential input voltage range
Power dissipation
-0.3V to +0.3V
600mW
Operating temperature range SAL, PAL, SCL, PCL packages
DA, DC packages
Storage temperature range
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
T = 25°C V = +5.0V unless otherwise specified
A
ALD1121E
ALD1123E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Drain to Source Voltage 1
V
10.0
10.0
V
+
Initial Threshold Voltage 2
V
t i
0.990
1.000
1.000
1.010
3.000
0.990
1.000
1.000
1.010
3.000
V
V
I
= 1µA T = 21°C
DS
A
E-trim V Range
t
V
t
Drain - Gate Connected
Voltage Tempco
TCV
-1.6
-0.3
0.0
-1.6
-0.3
0.0
mV/°C
mV/°C
mV/°C
mV/°C
I
= 5µA
DS
D
I
D
I
D
I
D
= 50µA
= 68µA
= 500µA
+2.7
+2.7
Initial Offset Voltage 3
V
1
5
5
2.000
-0.05
1
5
5
2.000
-0.05
mV
OS i
Tempco of V
TCV
µV/°C
V
= V
DS1 DS2
OS
OS
Differential Threshold Voltage 4 DV
V
t
Tempco of Differential
Threshold Voltage 4
Long Term Drift
TCDV
0.033
-0.02
-5
0.033
-0.02
-5
mV/°C
mV
t
∆V /∆t
1000 Hours
1000 Hours
t
Long Term Drift Match
Drain Source On Current
∆V /∆t
µV
t
I
3.0
3.0
mA
V =V = 5V V = 0V
G D S
DS(ON)
V = 1.0
t
Drain Source On Current 4
I
0.8
0.8
mA
V =V = 5V V = 0V
G D S
DS(ON)
V = 3.0
t
Initial Zero Tempco Voltage 3
Zero Tempco Current
Initial On-Resistance 3
On-Resistance Match
V
1.52
68
1.52
68
V
V = 1.000V
t
ZTCi
I
µA
Ω
ZTC
R
500
0.5
500
0.5
V
¡= 5V
V
DS
= 0.1V
ONi
GS
∆R
ON
%
NOTES:
1. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at
any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These parameters apply only when V of one or more of the devices are to be changed by user.
t
ALD1121E/ALD1123E
Advanced Linear Devices
3 of 14
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
+
T = 25°C V = +5.0V unless otherwise specified
A
ALD1121E
ALD1123E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Transconductance
gm
1.4
1.4
mA/V
V
V
= 10V,V =V + 4.0
G t
D
Transconductance Match
∆gm
25
6
25
µA/V
µA/V
µA/V
= 10V,V =V + 4.0
G t
D
Low Level Output
Conductance
g
g
6
V
V
= V +0.5V
t
OL
G
G
A
High Level Output
Conductance
68
5
68
5
= V +4.0V
t
OH
Drain Off Leakage Current
Gate Leakage Current
I
400
400
4
pA
nA
D(OFF)
4
T
T
= 125°C
= 125°C
I
10
100
1
10
100
1
pA
nA
GSS
A
Input Capacitance
Cross Talk
C
ISS
25
60
25
60
pF
dB
f = 100KHz
Relaxation Time Constant 4
Relaxation Voltage 4
t
2
2
Hours
%
RLX
V
-0.3
-0.3
1.0V ≤ V ≤ 3.0V
RLX
t
E-TRIM CHARACTERISTICS
+
T = 25°C V = +5.0V unless otherwise specified
A
ALD1121E
ALD1123E
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
1.000
Max
Unit
Conditions
E-trim V Range 4
t
V
t
1.000
3.000
3.000
V
Resolution of V
t
E-trim Pulse Step 4
RV
t
0.1
1
0.1
1
mV
Change in V Per
t
∆V / N
t
0.5
0.5
mV/ pulse V = 1.0V
t
E-trim Pulse 4
0.05
0.05
V = 2.5V
t
E-trim Pulse Voltage 4
E-trim Pulse Current 4
Pulse Frequency 4
Vp
11.75
12.00
2
12.25
11.75
12.00
2
12.25
V
Ip
mA
KHZ
ƒ pulse
50
50
ALD1121E/ALD1123E
Advanced Linear Devices
4 of 14
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
20
15
+1.0
T
= +25°C
T
= +25°C
A
V
= +12V
A
V
V
= +12V
= +10V
GS
GS
GS
V
= +10V
GS
V
= + 8V
= + 6V
GS
0
10
5
V
V
= +6V
GS
GS
V
= +8V
GS
V
V
= + 4V
= + 2V
GS
GS
0
-1.0
0
2
4
6
8
10
12
-200 -160 -120 -80 -40
0
40 80 120 160 +200
DRAIN SOURCE ON VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
3.0
2.0
6
V
= 5V
T
= +25°C
G
A
V
V
= +5V
= +4V
V
= +5.0V
5
4
GS
GS
DS
V = 1.0V
t
3
2
V = 1.5V
t
V
V
= +3V
= +2V
GS
V = 2.0V
t
1.0
0
V = 2.5V
t
1
0
GS
V = 3.0V
t
V
= +1V
GS
-50 -25
0
25
50
75
100
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
2.0
75
70
T
= +25°C
A
T
= +25°C
A
1.5
1.0
5.0
0
60
50
V
GS
V
DS
= V + 4.0V
= 10V
V
GS
V
DS
= V + 4.0V
t
= 5.0V
t
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
ALD1121E/ALD1123E
Advanced Linear Devices
5 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
12
10
4.0
3.0
2.0
V
= V
I = 1.0
D µA
DS
GS
V
GS
V
DS
= V + 0.5V
t
= 5.0V
V = 3.0V
t
V = 2.5V
t
8
6
V = 2.0V
t
V = 1.5V
t
1.0
V = 1.0V
t
4
2
0
-50
25
75
125
-50
-25
0
25
50
75
100
0
50
125
-25
100
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
DRAIN OFF LEAKAGE CURRENT I
vs. AMBIENT TEMPERATURE
DS
600
2.5
2.0
500
400
1.5
1.0
300
200
100
0
I
DS
0.5
0
-50
0
25
50
75
100
125
-25
-50 -25
25
50
75
100
125
0
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
100
90
10
T
= +25°C
V
GS
V
DS
= V + 4.0V
t
= 5.0V
A
80
70
5
60
50
40
V
GS
V
DS
= V + 0.5V
t
= 5.0V
0
-50
-25
0
25
50
75
100
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
AMBIENT TEMPERATURE (°C)
THRESHOLD VOTAGE (V)
ALD1121E/ALD1123E
Advanced Linear Devices
6 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
50
5
4
Zero Temperature
Coefficient (ZTC)
ZTC
125°C
ZTC
125°C
-55°C
-25°C
125°C
3
2
0°C
{
V
t
= 1.2V
{
{
V
V
t
t
= 1.0V
= 1.4V
1
0
- 25°C
- 25°C
- 25°C
70°C
125°C
0
1.0
1.4
1.8
1.2
2.0
0
1
2
3
4
5
1.6
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
10000
1000
+10
+8
V
V
= R
• I
= +0.9V to +5.0V
DS
GS
ON DS(ON)
REPRESENTATIVE UNITS
+6
+4
+2
V
= 5.0V
DS
100
10
V
D
0
-2
-4
DS
I
V
GS
DS(ON)
1.0
-6
-8
S
V
= 0.5V
DS
0.1
-10
-50
-25
0
25
50
75
100
125
0.1
1.0
10
100
1000
10000
AMBIENT TEMPERATURE (°C)
ON - RESISTANCE (KΩ)
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
5
4
3
5
4
V
D
DS
V = 1.000V
t
V = 0.5V
DS
= +125°C
A
V
= V
T
DS
GS
I
V
DS(ON)
GS
T
= -55°C
A
S
3
2
1
V
DS
= 0.5V
T
= 0°C
A
T
= +25°C
A
V
= 5V
2
1
DS
= +25°C
T
= +50°C
A
T
A
V
= 5V
DS
= +125°C
V
DS
= R
• I
ON DS(ON)
T
T
= +125°C
A
A
0
0
1
0.1
10
100
1000
10000
0
1
2
3
4
5
OUTPUT VOLTAGE (V)
DRAIN SOURCE ON CURRENT (µA)
ALD1121E/ALD1123E
Advanced Linear Devices
7 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
4
3
2
600
REPRESENTATIVE UNITS
500
400
1
0
300
200
100
0
-1
-2
-3
-4
I
GSS
-50
-25
0
25
50
75
100
125
-50
0
25
50
75
100
125
-25
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
5
5.0
D
V
DS
-55°C ≤ T ≤ +125°C
A
2.5
4.0
3.0
2.0
+125°C
I
DS(ON)
V
GS
S
0
-2.5
-5
0.0V ≤ V
≤ 5.0V
DS
+25°C
1.0
1
10
100
1000
0.1
10
100
1000
1
10000
DRAIN SOURCE ON CURRENT (µA)
ON - RESISTANCE (KΩ)
ALD1121E/ALD1123E
Advanced Linear Devices
8 of 14
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
5.00
4.05
0.053
0.069
1.35
0.004
0.014
0.007
0.185
0.140
0.010
0.018
0.010
0.196
0.160
0.10
0.35
0.18
4.69
3.50
A
1
S (45°)
b
C
D-8
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8°
0.248
0.037
8°
5.70
0.60
0°
H
0.024
0°
L
A
ø
S
A
0.50
0.010
0.020
e
0.25
1
b
S (45°)
C
H
L
ø
ALD1121E/ALD1123E
Advanced Linear Devices
9 of 14
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
Inches
Dim
A
Min
Max
Min
Max
E
E
1
5.08
0.105
0.200
3.81
1.27
2.03
1.65
0.51
0.30
11.68
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
0°
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
15°
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
0°
A
A
1
2
b
b
1
c
D-8
E
D
S
E
1
A
2
e
A
e
1
L
A
1
L
e
b
S-8
ø
b
1
c
ø
e
1
ALD1121E/ALD1123E
Advanced Linear Devices
10 of 14
CERDIP-8 PACKAGE DRAWING
8 Pin CERDIP Package
E
E
1
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
0.140
0.200
3.55
1.27
0.97
0.36
0.20
--
D
A
1
2.16
1.65
0.58
0.38
10.29
7.87
8.26
0.050
0.038
0.014
0.008
--
0.085
0.065
0.023
0.015
0.405
0.310
0.325
b
b
1
C
A
1
s
D-8
E
A
5.59
7.73
0.220
0.290
E
1
L
1
L
e
0.100 BSC
0.300 BSC
L
2.54 BSC
7.62 BSC
3.81
2
e
1
b
b
1
L
5.08
--
0.150
0.200
--
L
L
3.18
0.38
--
0.125
0.015
--
1
e
1.78
2.49
15°
0.070
0.098
15°
2
S
Ø
0°
0°
C
ø
e
1
ALD1121E/ALD1123E
Advanced Linear Devices
11 of 14
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
10.00
4.05
0.053
0.069
1.35
S (45°)
0.004
0.014
0.007
0.385
0.140
0.010
0.018
0.010
0.394
0.160
0.10
0.35
0.18
9.80
3.50
A
1
b
C
D-16
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8°
0.248
0.037
8°
5.70
0.60
0°
H
0.024
0°
L
A
ø
0.50
0.010
0.020
0.25
S
A
e
1
b
S (45°)
C
H
L
ø
ALD1121E/ALD1123E
Advanced Linear Devices
12 of 14
PDIP-16 PACKAGE DRAWING
16 Pin Plastic DIP Package
E
E
1
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
0.105
0.200
3.81
0.38
1.27
0.89
0.38
0.20
18.93
5.59
7.62
2.29
7.37
2.79
0.38
0°
1.27
2.03
1.65
0.51
0.30
21.33
7.11
8.26
2.79
7.87
3.81
1.52
15°
0.015
0.050
0.035
0.015
0.008
0.745
0.220
0.300
0.090
0.290
0.110
0.015
0°
0.050
0.080
0.065
0.020
0.012
0.840
0.280
0.325
0.110
0.310
0.150
0.060
15°
A
A
1
2
b
b
1
c
D
D-16
E
S
E
1
A
2
e
A
e
1
L
L
A
1
S-16
ø
e
b
b
1
c
ø
e
1
ALD1121E/ALD1123E
Advanced Linear Devices
13 of 14
CERDIP-16 PACKAGE DRAWING
16 Pin CERDIP Package
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
2.16
1.65
0.58
0.38
21.34
7.87
8.26
0.140
0.200
3.55
E
E
1
0.050
0.038
0.014
0.008
--
0.085
0.065
0.023
0.015
0.840
0.310
0.325
1.27
0.97
0.36
0.20
--
A
1
b
b
1
C
D-16
E
D
0.220
0.290
5.59
7.73
E
1
e
0.100 BSC
0.300 BSC
2.54 BSC
7.62 BSC
A
1
s
e
1
A
5.08
--
0.150
0.200
--
3.81
L
0.125
0.015
--
3.18
0.38
--
L
L
1
2
L
1
L
L
2
1.78
2.49
15°
0.070
0.098
15°
b
b
1
S
0°
0°
Ø
e
C
ø
e
1
ALD1121E/ALD1123E
Advanced Linear Devices
14 of 14
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