AM6512J8VR [AITSEMI]

N-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	AM6512J8VR
厂家：	AiT Semiconductor
描述：	N-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总11页 (文件大小：836K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION

FEATURES

The AM6512 is available in DFN8(5x6) package.



30V/80A,

_DS(ON)= 1.9mΩ (Max.) @ V_GS=10V

_DS(ON)= 3mΩ (Max.) @ V_GS=4.5V



100% UIS + R_gTested

Reliable and Rugged

Lower Q_gand Q_gdfor high-speed switching

Lower R_DS(ON)to Minimize Conduction Losses

Available in DFN8(5x6) package.

ORDERING INFORMATION

APPLICATION



Power Management in Desktop Computer or

DC/DC Converters.

Package Type

Part Number

AM6512J8R

AM6512J8VR

DFN8(5x6)

PIN DESCRIPTION

SPQ: 3,000pcs/ Reel

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

N-Channel MOSFET

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 1 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

PIN DESCRIPTION

Top View

Pin #

Symbol

Function

Source

Gate

Drain

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 2 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C, unless Otherwise Noted

_DSS, Drain-Source Voltage

30V

±20V

V_GSS, Gate-Source Voltage

T_J, Maximum Junction Temperature

T_STG, Storage Temperature Range

I_S, Diode Continuous Forward Current

150°C

-55°C~150°C

42.5A

80*A

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

Steady State

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

t ≤10s

I_D^NOTE1, Continuous Drain Current

I_DM^NOTE2, Pulsed Drain Current

75A

160A

78W

P_D, Maximum Power Dissipation

R_θJC, Thermal Resistance-Junction to Case

I_D^NOTE3, Continuous Drain Current

31W

1.6°C/W

28A

22A

2.3W

P_D^NOTE3, Maximum Power Dissipation

1.5W

20°C/W

55°C/W

43A

R_θJA^NOTE3, Thermal Resistance-Junction to Ambient

Steady State

L=0.1mH

I_AS^NOTE4, Avalanche Current, Single Pulse

E_AS^NOTE4, Avalanche Energy, Single Pulse

92mJ

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

NOTE1,*: Max. continue current is limited by bonding wire.

NOTE2: Pulse width is limited by max. junction temperature.

NOTE3: R_θJAsteady state t=999s.

NOTE4: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature T_J=25°C).

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 3 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

ELECTRICAL CHARACTERISTICS

T_A= 25°C, unless Otherwise Noted

Parameter

Static Characteristics

Symbol

Conditions

Min.

Typ. Max.

Unit

Drain-Source Breakdown Voltage

(transient)

BV_DSS

BV_DSSt

V_GS=0V, I_DS=-250μA

V_GS=0V, I_D(aval)=40A

T_case=25°C, t_transient=100ns

V_DS=24V, V_GS=0V

Zero Gate Voltage Drain Current

I_DSS

μA

T_J=85°C

V_DS=V_GS, I_DS=250μA

V_GS=±20V, V_DS=0V

V_GS=10V, I_DS=20A

T_J=125°C

2.3

±100

1.9

Gate Threshold Voltage

Gate Leakage Current

V_GS(th)

I_GSS

1.3

1.6

1.5

2.2

Drain-Source On-state

Resistance

R_DS(ON)

NOTE5

mΩ

V_GS=4.5V, I_DS=12A

V_DS=5V, I_DS=15A

Forward Transconductance

Diode Characteristics

Diode Forward Voltage

Reverse Recovery Time

Charge Time

Gfs

NOTE5

V_SD

I_SD=20A, V_GS=0V

0.8

23.5

27.5

1.1

t_rr

t_a

t_b

I_SD=20A, dl_SD/dt=100A/μs

Discharge Time

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

Q_rr

R_G

C_iss

C_oss

C_rss

t_d(ON)

t_r

V_GS=0V, V_DS=0V, f=1MHz

V_GS=0V,

V_DS=15V,

0.9

Input Capacitance

2820 3666

1910 2674

140

15.5

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Frequency=1.0MHz

210

V_DD=15V, R_L=15Ω,

I_DS=1A, V_GEN=10V,

R_G=6Ω

t_d(OFF)

t_f

Gate Charge Characteristics

V_DS=15V, V_GS=10V,

I_DS=20A

Total Gate Charge

Q_g

44.5

57.8

Total Gate Charge

Q_g

Q_gth

Q_gs

Q_gd

21.2

2.9

4.3

8.3

Threshold Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS=15V, V_GS=4.5V,

I_DS=20A

NOTE5: Pulse test ; pulse width≤300us, duty cycle≤2%.

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 4 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

TYPICAL PERFORMANCE CHARACTERISTICS

Power Dissipation

Safe Operation Area

Drain Current

Thermal Transient Impedance

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 5 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

Output Characteristics

Drain-Source On Resistance

Gate-Source On Resistance

10. Gate Threshold Voltage

11. Drain-Source On Resistance

12. Source-Drain Diode Forward

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 6 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

13. Capacitance

14. Gate Charge

15. Transfer Characteristics

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 7 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

DETAILED INFORMATION

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 8 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

CLASSIFICATION PROFILE

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 9 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

PACKAGE INFORMATION

Dimension in DFN8 (Unit: mm)

MILLIMETERS

Min

INCHES

Max

Symbol

Max

1.20

0.51

0.25

5.30

4.40

6.20

5.80

Min

0.90

0.30

0.19

4.80

3.60

5.90

5.50

0.035

0.012

0.007

0.189

0.141

0.232

0.217

0.047

0.020

0.010

0.209

0.173

0.244

0.228

0.050 BSC

0.012

0.030

0.012

0.030

0.154

1.27 BSC

0.05

0.35

0.05

0.35

3.34

0.762

0.30

0.75

0.30

0.75

3.90

0.002

0.014

0.002

0.014

0.131

0.030

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 10 -

AM6512

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

N-CHANNEL ENHANCEMENT MODE

IMPORTANT NOTICE

AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to

discontinue any integrated circuit product or service without notice, and advises its customers to obtain the

latest version of relevant information to verify, before placing orders, that the information being relied on is

current.

AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to

be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT

products in such applications is understood to be fully at the risk of the customer. As used herein may involve

potential risks of death, personal injury, or server property, or environmental damage. In order to minimize

risks associated with the customer's applications, the customer should provide adequate design and

operating safeguards.

AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT

warrants the performance of its products of the specifications applicable at the time of sale.

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 11 -

AM6512J8VR [AITSEMI]

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