AM6602 [AITSEMI]
DUAL ENHANCEMENT MODE MOSFET;
| 型号： | AM6602 |
| 厂家： | 
AiT Semiconductor |
| 描述： | DUAL ENHANCEMENT MODE MOSFET |
| 文件： | 总12页 (文件大小：883K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
DESCRIPTION
FEATURES
AM6602 is available in a SOT-26 package.
N-Channel
30V/4.9A,
R
R
DS(ON)=39mΩ(max.) @ VGS=10V
DS(ON)=68mΩ(max.) @ VGS=4.5V
P-Channel
-30V/-3A,
R
R
DS(ON)=100mΩ(max.) @ VGS=-10V
DS(ON)=170mΩ(max.) @ VGS=-4.5V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Available in a SOT-26 package.
ORDERING INFORMATION
APPLICATION
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Package Type
SOT-26
Part Number
AM6602E6R
AM6602E6VR
Systems.
E6
Load Switch
V: Halogen free Package
R: Tape & Reel
PIN DESCRIPTION
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV1.0
- DEC 2013 RELEASED -
- 1 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
PIN DESCRIPTION
Top View
Pin #
Symbol
G1
Function
Gate1
1
2
3
4
5
6
S2
Source2
Gate2
G2
D2
Drain2
Source1
Drain1
S1
D1
REV1.0
- DEC 2013 RELEASED -
- 2 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
Parameter
N Channel
30
P Channel
-30
Units
V
VDSS, Drain-Source Voltage
VGSS, Gate-Source Voltage
±20
4.9
3.9
19
±20
-3
V
TA=25℃
TA=70℃
VGS=10V
ID, Continuous Drain Current
-24
-12
A
IDM, 300μs Pulsed Drain Current
IS, Diode Continuous Forward Current
TJ, Maximum Junction Temperature
TSTG, Storage Temperature Range
1
150
℃
℃
-55~150
1.4
TA=25oC
TA=70℃
t ≤ 10s
PD, Maximum Power Dissipation
W
0.9
90
RθJANOTE1, Thermal Resistance-Junction to Ambient
°C/W
Steady state
125
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Surface Mounted on 1in2 pad area.
REV1.0
- DEC 2013 RELEASED -
- 3 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
N CHANNEL ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V,IDS=250μA
30
-
-
-
-
V
VDS=24V,VGS=0V
1
Zero Gate Voltage Drain Current
μA
TJ=85°C
30
2.5
±10
39
68
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS=VGS,IDS=250μA
VGS=±20V, VDS=0V
VGS=10V,IDS=4.9A
VGS-4.5V,IDS=3A
1.3
1.8
-
V
-
-
-
μA
32
52
RDS(ON)
NOTE2
Drain-Source On-state Resistance
mΩ
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics NOTE3
Gate Resistance
NOTE2
VSD
ISD=1A,VGS=0V
ISD=4.9A,
-
-
-
0.75
9.2
1.1
V
trr
-
-
ns
nC
dlSD/dt=100A/μs
Qrr
4.3
RG
CISS
COSS
CRSS
tD(ON)
tR
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
-
-
-
-
-
-
-
-
2.3
215
37
-
-
Ω
Input Capacitance
Output Capacitance
VDS=15V,
-
pF
Frequency=1.0MHz
Reverse Transfer Capacitance
Turn-on Delay Time
28
-
5.3
11
8
VDD=15V, RL=15Ω
IDS=1A, VGEN=10V,
RG=6Ω
Turn-on Rise Time
16
17
4
ns
Turn-off Delay Time
tD(OFF)
tF
12
Turn-off Fall Time
2.6
Gate Charge Characteristics NOTE3
VGS=4.5V
VGS=10V
-
-
-
-
-
3
-
-
-
-
-
VDS=15V,
IDS=4.9A
Total Gate Charge
QG
5.8
1.1
1.5
0.5
nC
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
QGth
VDS=15V, VGS=10V,
DS≡4.9A
I
Threshold Gate Charge
NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%.
NOTE3: Guaranteed by design, not subject to production testing.
REV1.0
- DEC 2013 RELEASED -
- 4 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
P CHANNEL ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V,IDS=-250μA
-30
-
-
-
V
VDS=-24V,VGS=0V
-
-1
Zero Gate Voltage Drain Current
μA
TJ=85°C
-
-
-30
-2.5
±10
100
170
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS=VGS,IDS=-250μA
VGS=±20V, VDS=0V
VGS=-10V,IDS=-3A
VGS=-4.5V,IDS=-1.9A
-1.3
-1.8
-
V
-
-
-
μA
82
125
RDS(ON)
NOTE2
Drain-Source On-state Resistance
mΩ
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics NOTE3
Gate Resistance
NOTE2
VSD
ISD=-1A,VGS=0V
-
-
-
-0.75
19
-1.1
V
trr
-
-
ns
nC
ISD=-3A, dlSD/dt=100A/μs
Qrr
14
RG
CISS
COSS
CRSS
tD(ON)
tR
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
-
-
-
-
-
-
-
-
7
-
-
-
-
-
-
-
-
Ω
Input Capacitance
229
42
Output Capacitance
VDS=-15V,
pF
Frequency=1.0MHz
Reverse Transfer Capacitance
Turn-on Delay Time
33
7.2
9.3
15.4
3.6
VDD=-15V, RL=15Ω
IDS=-1A, VGEN=-10V,
RG=6Ω
Turn-on Rise Time
ns
Turn-off Delay Time
tD(OFF)
tF
Turn-off Fall Time
Gate Charge Characteristics NOTE3
VGS=-4.5V
VGS=-10V
-
-
-
-
-
3.3
6.5
1.1
1.1
0.6
-
-
-
-
-
VDS=-15V,
IDS=-3A
Total Gate Charge
QG
nC
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
QGth
VDS=-15V, VGS=-10V,
IDS=-3A
Threshold Gate Charge
NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%.
NOTE3: Guaranteed by design, not subject to production testing.
REV1.0
- DEC 2013 RELEASED -
- 5 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
N CHANNEL TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Drain Current
3. Safe Operation Area
4. Thermal Transient Impedance
5. Output Characteristics
6. Drain-Source On Resistance
REV1.0
- DEC 2013 RELEASED -
- 6 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
7. Gate-Source On Resistance
8. Gate Threshold Voltage
9. Drain-Source On Resistance
10. Source-Drain Diode Forward
11. Capacitance
12. Gate Charge
REV1.0
- DEC 2013 RELEASED -
- 7 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
P CHANNEL TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Drain Current
3. Safe Operation Area
4. Thermal Transient Impedance
5. Output Characteristics
6. Drain-Source On Resistance
REV1.0
- DEC 2013 RELEASED -
- 8 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
7. Gate-Source On Resistance
8. Gate Threshold Voltage
9. Drain-Source On Resistance
10. Source-Drain Diode Forward
11. Capacitance
12. Gate Charge
REV1.0
- DEC 2013 RELEASED -
- 9 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
DETAILED INFORMATION
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
REV1.0
- DEC 2013 RELEASED -
- 10 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
PACKAGE INFORMATION
Dimension in SOT-26 Package (Unit: mm)
SYMBOL
MIN
-
MAX
1.250
0.150
1.300
0.500
0.220
3.100
3.000
1.800
A
A1
A2
b
0.000
0.900
0.300
0.080
2.700
2.600
1.400
c
D
E
E1
e
0.950(BSC)
1.900(BSC)
e1
L
0.300
0°
0.600
8°
θ
REV1.0
- DEC 2013 RELEASED -
- 11 -
AM6602
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- DEC 2013 RELEASED -
- 12 -
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