AM4953M8R [AITSEMI]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET;型号: | AM4953M8R |
厂家: | AiT Semiconductor |
描述: | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总9页 (文件大小:801K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
The AM4953 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a load switch or in PWM
applications.
VDS = -30V,ID = -5.1A
R
R
DS(ON) <105mΩ @ VGS=-4.5V
DS(ON) < 55mΩ @ VGS=-10V
High Power and current handing capability
Surface Mount Package
Available in SOP8 Package
The AM4953 is available in SOP8 package.
P CHANNEL MOSFET
APPLICATION
PWM applications
Load switch
Power management
ORDERING INFORMATION
Package Type
SOP8
Part Number
AM4953M8R
M8
AM4953M8VR
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
Schematic diagram
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 1 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
S1
Function
Source 1
Gate 1
1
2
3
4
5
6
7
8
G1
S2
Source 2
Gate 2
G2
D2
Drain 2
Drain 2
Drain 1
Drain 1
D2
D1
D1
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 2 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
TA=25℃, unless otherwise noted
VDS, Drain-Source Voltage
-30V
±20V
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
-5.1A
IDM, Drain Current-PulsedNOTE1
-20A
PD, Maximum Power Dissipation
2.5W
TJ, TSTG, Operating Junction and Storage Temperature Range
-55°C ~150°C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL CHARACTERISTICS
Parameter
Symbol
RθJA
Limit
50
Units
°C/W
Thermal Resistance, Junction-to-AmbientNOTE2
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 3 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics NOTE 3
BVDSS
IDSS
VGS=0V,ID=-250μA
VDS=-24V,VGS=0V
VGS=±20V,VDS=0V
-30
-33
-
V
-
-
-
-
-1
μA
nA
IGSS
±100
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
-1.6
-3
V
VGS=-10V,ID=-5.1A
VGS=-4.5V,ID=-4.2A
VDS=-15V,ID=-4.5A
-
-
48
73
7
55
105
-
Drain-Source On-State
Resistance
RDS(ON)
gFS
mΩ
Forward Transconductance
Dynamic Characteristics NOTE 4
Input Capacitance
4
S
Clss
Coss
Crss
-
-
-
520
130
70
-
-
-
VDS=-15V,VGS=0V,
F=1.0MHz
Output Capacitance
pF
ns
Reverse Transfer Capacitance
Switching Characteristics NOTE 4
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
15
13
58
21
12
2.2
3
-
-
-
-
-
-
-
Turn-on Rise Time
VDD=-15V, ID=-1A
VG=-10V, RGEN=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=-15V,ID=-5.3A,
VGS=-10V
Gate-Source Charge
nC
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward VoltageNOTE3
VSD
VGS=0V, IS=-1.7A
-
-
-1.2
NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature.
NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NOTE4: Guaranteed by design, not subject to production
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 4 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS
1.
3.
5.
Power Dissipation
2.
4.
6.
Drain Current
Output Characteristics
Drain-Source On-Resistance
Transfer Characteristics
Drain-Source On-Resistance
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 5 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
7.
Rdson vs. Vgs
8.
Capacitance vs. Vds
9.
Gate Charge
10. Source- Drain Diode Forward
11. Safe Operation Area
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 6 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
12. Normalized Maximum Transient Thermal Impedance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1. Switching Test Circuit
2. Switching Waveforms
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 7 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm)
Millimeters
Inches
Symbol
Min.
Max.
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
Min.
Max.
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
c
D
E
E1
e
1.270(BSC)
0.400
0°
0.050(BSC)
L
1.270
8°
0.016
0°
0.050
8°
θ
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 8 -
AM4953
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV3.0
-MAR 2010 RELEASED, JUL 2016 UPDATED -
- 9 -
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