AM4953M8VR [AITSEMI]

P-CHANNEL ENHANCEMENT MODE POWER MOSFET;


型号：	AM4953M8VR
厂家：	AiT Semiconductor
描述：	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件：	总9页 (文件大小：801K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

The AM4953 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a load switch or in PWM

applications.



V_DS= -30V,I_D= -5.1A

_DS(ON)<105mΩ @ V_GS=-4.5V

_DS(ON)< 55mΩ @ V_GS=-10V



High Power and current handing capability

Surface Mount Package

Available in SOP8 Package

The AM4953 is available in SOP8 package.

P CHANNEL MOSFET

APPLICATION



PWM applications

Load switch

Power management

ORDERING INFORMATION

Package Type

SOP8

Part Number

AM4953M8R

AM4953M8VR

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Suffix “ V “ means Halogen free Package

Schematic diagram

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 1 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PIN DESCRIPTION

Top View

Pin #

Symbol

Function

Source 1

Gate 1

Source 2

Gate 2

Drain 2

Drain 1

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 2 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

ABSOLUTE MAXIMUM RATINGS

T_A=25℃, unless otherwise noted

V_DS, Drain-Source Voltage

-30V

±20V

V_GS, Gate-Source Voltage

I_D, Drain Current-Continuous

-5.1A

I_DM, Drain Current-Pulsed^NOTE1

-20A

P_D, Maximum Power Dissipation

2.5W

T_J, T_STG, Operating Junction and Storage Temperature Range

-55°C ~150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL CHARACTERISTICS

Parameter

Symbol

R_θJA

Limit

Units

°C/W

Thermal Resistance, Junction-to-Ambient^NOTE2

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 3 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

ELECTRICAL CHARACTERISTICS

T_A=25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min

Typ.

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{NOTE 3}

B_VDSS

I_DSS

V_GS=0V,I_D=-250μA

V_DS=-24V,V_GS=0V

V_GS=±20V,V_DS=0V

-30

-33

-1

μA

I_GSS

±100

Gate Threshold Voltage

V_GS(th)

V_DS=V_GS,I_D=-250μA

-1

-1.6

-3

V_GS=-10V,I_D=-5.1A

V_GS=-4.5V,I_D=-4.2A

V_DS=-15V,I_D=-4.5A

105

Drain-Source On-State

Resistance

R_DS(ON)

g_FS

mΩ

Forward Transconductance

Dynamic Characteristics ^{NOTE 4}

Input Capacitance

C_lss

C_oss

C_rss

520

130

VDS=-15V,VGS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{NOTE 4}

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

2.2

Turn-on Rise Time

V_DD=-15V, I_D=-1A

V_G=-10V, R_GEN=6Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS=-15V,I_D=-5.3A,

V_GS=-10V

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage^NOTE3

V_SD

V_GS=0V, I_S=-1.7A

-1.2

NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature.

NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.

NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

NOTE4: Guaranteed by design, not subject to production

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 4 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

TYPICAL PERFORMANCE CHARACTERISTICS

Power Dissipation

Drain Current

Output Characteristics

Drain-Source On-Resistance

Transfer Characteristics

Drain-Source On-Resistance

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 5 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Rdson vs. Vgs

Capacitance vs. Vds

Gate Charge

10. Source- Drain Diode Forward

11. Safe Operation Area

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 6 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

12. Normalized Maximum Transient Thermal Impedance

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1. Switching Test Circuit

2. Switching Waveforms

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 7 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PACKAGE INFORMATION

Dimension in SOP8 Package (Unit: mm)

Millimeters

Inches

Symbol

Min.

Max.

1.750

0.250

1.550

0.510

0.250

5.100

4.000

6.200

Min.

Max.

0.069

0.010

0.061

0.020

0.010

0.200

0.157

0.244

1.350

0.100

1.350

0.330

0.170

4.700

3.800

5.800

0.053

0.004

0.053

0.013

0.006

0.185

0.150

0.228

1.270(BSC)

0.400

0°

0.050(BSC)

1.270

8°

0.016

0°

0.050

8°

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 8 -

AM4953

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

IMPORTANT NOTICE

AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to

discontinue any integrated circuit product or service without notice, and advises its customers to obtain the

latest version of relevant information to verify, before placing orders, that the information being relied on is

current.

AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to

be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT

products in such applications is understood to be fully at the risk of the customer. As used herein may involve

potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize

risks associated with the customer's applications, the customer should provide adequate design and

operating safeguards.

AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT

warrants the performance of its products of the specifications applicable at the time of sale.

REV3.0

-MAR 2010 RELEASED, JUL 2016 UPDATED -

- 9 -

AM4953M8VR [AITSEMI]

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