AM4435 [AITSEMI]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET;型号: | AM4435 |
厂家: | AiT Semiconductor |
描述: | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总9页 (文件大小:664K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
The AM4435 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
VDS = -30V,ID = -9.1A
R
R
DS(ON) < 35mΩ@ VGS=-4.5V
DS(ON) < 20mΩ@ VGS=-10V
High Power and current handing capability
Surface Mount Package
The AM4435 is available in SOP8 Package
Available in SOP8 Package
ORDERING INFORMATION
APPLICATION
Battery Switch
Load switch
Package Type
SOP8
Part Number
AM4435M8R
AM4435M8VR
Power management
M8
V: Halogen free Package
R: Tape & Reel
P-CHANNEL MOSFET
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
Schematic diagram
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 1 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 2 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise specified
VDS, Drain-Source Voltage
-30V
±20V
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
-9.1A
IDM, Drain Current-PulsedNOTE1
-50A
PD, Maximum Power Dissipation
3.1W
TJ, TSTG, Operating Junction and Storage Temperature Range
-55°C ~150°C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL INFORMATION
Parameter
Symbol
RθJA
Limit
40
Units
°C/W
Thermal Resistance, Junction-to-AmbientNOTE2
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 3 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics NOTE 3
BVDSS
IDSS
VGS=0V,ID=-250μA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
-30
-33
-
V
-
-
-
-
-1
μA
nA
IGSS
±100
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
-1.5
-3
V
VGS=-10V,ID=-9.1A
VGS=-4.5V,ID=-6.9A
VDS=-15V,ID=-9.1A
-
-
15
21
-
20
35
-
Drain-Source On-State
Resistance
RDS(ON)
gFS
mΩ
Forward Transconductance
Dynamic Characteristics NOTE 4
Input Capacitance
10
S
Clss
Coss
Crss
-
-
-
1600
350
-
-
-
VDS=-15V,VGS=0V,
F=1.0MHz
Output Capacitance
pF
ns
Reverse Transfer Capacitance
Switching Characteristics NOTE 4
Turn-on Delay Time
300
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
10
15
110
70
30
5.5
8
-
-
-
-
-
-
-
Turn-on Rise Time
VDD=-15V, ID=-1A
VG=-10V, RGEN=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=-15V,ID=-9.1A,
VGS=-10V
Gate-Source Charge
nC
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward VoltageNOTE3
VSD
VGS=0V, IS=-2.1A
-
-
-1.2
NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature.
NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NOTE4: Guaranteed by design, not subject to production
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 4 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL CHARACTERISTICS
1.
3.
5.
Power Dissipation
2.
4.
6.
Drain Current
Output Characteristics
Drain-Source On-Resistance
Transfer Characteristics
Drain-Source On-Resistance
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 5 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
7.
Rdson vs. Vgs
8.
Capacitance vs. VDS
9.
Gate Charge
10. Source- Drain Diode Forward
11. Safe Operation Area
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 6 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
12. Normalized Maximum Transient Thermal Impedance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1. Switching Test Circuit
2. Switching Waveforms
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 7 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm)
Millimeters
Inches
Symbol
Min.
Max.
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
Min.
Max.
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
c
D
E
E1
e
1.270(BSC)
0.400
0°
0.050(BSC)
L
1.270
8°
0.016
0°
0.050
8°
θ
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 8 -
AM4435
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servere property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV2.0
- JUN 2010 RELEASED, JUL 2016 UPDATED -
- 9 -
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