AM4435AM8R [AITSEMI]

P-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	AM4435AM8R
厂家：	AiT Semiconductor
描述：	P-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总8页 (文件大小：511K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION

FEATURES

AM4435A is the P-Channel enhancement mode

power field effect transistors are using trench DMOS

technology. This advanced technology has been

especially tailored to minimize on-state resistance,

provide superior, fast switching performance, and

withstand high energy pulse in the avalanche and

commutation mode. This device is suitable for use as

a load switch or PWM applications.



V_DS= -30V, I_D= -10.6A

_DS(ON)=14mΩ(Typ.)@V_GS= -10V

_DS(ON)=18mΩ(Typ.)@V_GS= -4.5V



Fast switch

High power and current handling capability

Available in SOP8 Package

APPLICATIONS



Load Switch

The AM4435A is available in SOP8 package.

LED Application

DC-DC Power Management

ORDERING INFORMATION

P CHANNEL MOSFET

Package Type

Part Number

AM4435AM8R

AM4435AM8VR

SOP8

SPQ: 2,500pcs/Reel

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Schematic diagram

REV1.0

- APR 2018 RELEASED -

- 1 -

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

PIN DESCRIPTION

Top View

Pin #

Symbol

Function

Source

Gate

Drain

REV1.0

- APR 2018 RELEASED -

- 2 -

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C, unless otherwise noted

_DSS, Drain-Source Voltage

-30V

±20V

V_GSS, Gate-Source Voltage

T_A= 25°C

T_A= 70°C

-10.6A

I_D, Continuous Drain Current

-8.5A

I_DM, Pulsed Drain Current^NOTE1

-42.4A

I_AS, Avalanche Current^{NOTE1, 6}

-30A

E_AS, Single Pulse Avalanche Energy L=0.1mH ^{NOTE1, 6}

45mJ

T_A= 25°C

T_A= 70°C

3.1W

P_D, Power Dissipation^NOTE2

2.0W

T_J, Operation Junction Temperature

T_STG, Storage Temperature Range

−55°C ~150°C

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

Parameter

Symbol

R_θJA

Max

Unit

Thermal Resistance Junction to Ambient^NOTE3t≦10s

Thermal Resistance Junction to Ambient^NOTE3

Thermal Resistance Junction to Case^NOTE3

°C/W

Steady-State

R_θJC

REV1.0

- APR 2018 RELEASED -

- 3 -

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

ELECTRICAL CHARACTERISTICS

T_A= 25°C, unless otherwise noted

Parameter

Static Parameters

Symbol

Conditions

Min

Typ

Max Units

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BV_DSS

V_GS(th)

I_GSS

V_GS=0V, I_D=-250μA

V_DS=V_GS, I_D=-250μA

V_DS=0V, V_GS=±20V

V_DS=-30V, V_GS=0V

T_J=25°C

-30

-1

-1.6

-2.5

±100

Gate Leakage Current

-1

Zero Gate Voltage Drain Current

I_DSS

μA

V_DS=-24V,V_GS=0V

T_J=75°C

-10

V_GS=-10V, I_D=-10.6A

V_GS=-4.5V, I_D=-8A

V_DS=-10V, I_D=-10A

Drain-source On-Resistance^NOTE4

R_DS(ON)

G_fs

mΩ

Forward Transconductance

Diode Characteristics

12.5

Diode Forward Voltage^NOTE2

Continuous Source Current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Dynamic and Switching Parameters

Total Gate Charge(10V)

V_SD

I_S

I_S=-1A,V_GS=0V

-0.7

-1

-5.3

trr

13.8

12.3

I_S=-10A,

dl/dt=100A/μs

Qrr

Q_g

48.6

24.3

10.9

13.9

Total Gate Charge(4.5V)

Gate-Source Charge

V_DS=-15V, V_GS=-10V,

I_D=-10A

Q_gs

Q_gd

C_iss

C_oss

C_rss

8.1

10.3

Gate-Drain Charge

Input Capacitance

2590 3626

V_DS=-15V, V_GS=0V,

f=1MHz

Output Capacitance

283

172

396

241

Reverse Transfer Capacitance

V_GS=0V, V_DS=0V,

f=1MHz

Gate Resistance

Turn-On Time^NOTE5

Turn-Off Time^NOTE5

R_g

8.8

t_d(on)

t_r

t_d(off)

t_f

19.1

4.8

V_DD=-15V, V_GEN=-10V,

R_G=3Ω, I_D=-1A

11.5

NOTE1: The value of R_θJAis measured with the device in a still air environment with maximum junction temperature T_J(MAX)=150°C (initial

temperature T_A=25°C).

NOTE2: The T_J(MAX)=150°C, using junction-to-ambient thermal resistance.

NOTE3.Surface−mounted on FR-4 board using 1 sq−in pad, 2 oz Cu, in a still air environment with T_A=25°C.

NOTE4: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

NOTE5: Pulsed width limited by maximum junction temperature.

NOTE6: The E_ASdata shows Max.

REV1.0

- APR 2018 RELEASED -

- 4 -

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

TYPICAL ELECTRICAL CHARACTERISTICS

Output Characteristics

Drain-Source On Resistance

Gate Charge

Capacitance

Gate Threshold Voltage

Power Dissipation

REV1.0

- APR 2018 RELEASED -

- 5 -

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

R_DS(ON)vs. Junction Temperature

Drain Current vs. T_J

Maximum Safe Operation Area

10. Thermal Transient Impedance

11. Gate Charge Waveform

12. Switching Time Waveform

REV1.0

- APR 2018 RELEASED -

- 6 -

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

PACKAGE INFORMATION

Dimension in SOP8 Package (Unit: mm)

Millimeters

Inches

Max.

Symbol

Min.

Max.

1.750

0.250

1.550

0.510

0.250

5.100

4.000

6.200

Min.

1.350

0.100

1.350

0.330

0.170

4.700

3.800

5.800

0.053

0.004

0.053

0.013

0.006

0.185

0.150

0.228

0.069

0.010

0.061

0.020

0.010

0.200

0.157

0.244

0.050 BSC

0.050

8°

1.270 BSC

0.400

0°

1.270

8°

0.016

0°

REV1.0

- APR 2018 RELEASED -

- 7 -

AM4435A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE

IMPORTANT NOTICE

AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to

discontinue any integrated circuit product or service without notice, and advises its customers to obtain the

latest version of relevant information to verify, before placing orders, that the information being relied on is

current.

AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to

be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT

products in such applications is understood to be fully at the risk of the customer. As used herein may involve

potential risks of death, personal injury, or server property, or environmental damage. In order to minimize

risks associated with the customer's applications, the customer should provide adequate design and

operating safeguards.

AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT

warrants the performance of its products of the specifications applicable at the time of sale.

REV1.0

- APR 2018 RELEASED -

- 8 -

AM4435AM8R [AITSEMI]

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