AM4407 [AITSEMI]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM4407 |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM4407 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
30V/-12.0A, RDS(ON) = 12mΩ(typ)@VGS =-10V
-30V/-7.5A, RDS(ON) = 19mΩ(typ)@VGS =-4.5V
Super high density cell design for extremely low
RDS(ON)
provide excellent RDS(ON)
.
Exceptional on-resistance and maximum DC
current capability
This high density process is especially tailored to
minimize on-state resistance.
Available in SOP8 Package
These devices are particularly suited for low voltage
application, and low in-line power loss are needed in
a very small outline surface mount package.
APPLICATION
High Frequency Point-of-Load Synchronous
New working DC-DC Power System
Load Switch
The AM4407 is available in SOP8 Package
ORDERING INFORMATION
P CHANNEL MOSFET
Package Type
SOP8
Part Number
AM4407M8R
AM4407M8VR
M8
R: Tape & Reel
Note
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
REV1.0
- SEP 2010 RELEASED –
- 1 -
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
Top View
Symbol
Pin #
Function
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
THERMAL INFORMATION
Parameter
Symbol
Max
Unit
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
RθJA
RθJC
85
28
°C/W
°C/W
REV1.0
- SEP 2010 RELEASED –
- 2 -
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25°C Unless otherwise specified
VDSS, Drain-Source Voltage
30V
±20V
VGSS, Gate-Source Voltage
ID, Continuous Drain Current, VGS=10VNOTE1
IDM, Pulsed Drain CurrentNOTE2
PD, Power Dissipation
TA=25°C
12A
30A
TA=25°C
TA=70°C
3.2W
2W
TJ, Operation Junction Temperature
TSTG, Storage Temperature Range
-55/150°C
-55/150°C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C.
NOTE2: The data tested by pulsed , pulse width≦300us , duty cycle≦2%
REV1.0
- SEP 2010 RELEASED –
- 3 -
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TJ = 25°C Unless otherwise specified
Parameter
Static Parameters
Drain-Source Breakdown
Voltage
Symbol
Conditions
Min
-30
Typ
-
Max
-
Unit
V
VGS=0V, ID=-250μA
V(BR)DSS
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
VGS(th)
IGSS
VDS=VGS, ID=-250μA
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55°C
-1.0
-
-
-
-2.5
±100
-1
V
-
-
nA
IDSS
µA
-
-
-5
Drain-source On-Resistance
VGS=-10V,ID=-12A
VGS=-4.5V, ID=-7.5A
VDS=-5V,ID=-30.0A
-
-
-
12
19
24
15
25
-
mΩ
RDS(ON)
Gfs
Forward Transconductance
Source-Drain Diode
Diode Forward Voltage
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
S
VSD
IS=-2.3A,VGS=0V
-
-0.75 -1.0
V
Qg
Qgs
Qgd
Ciss
Coss
-
-
-
-
-
21
5.2
-
-
-
-
-
VDS=-15V
VGS=4.5V
ID=-12A
nC
7.5
2220
320
VDS=-15V
VGS=0V
f=1MHz
pF
nS
Crss
-
235
-
Capacitance
Turn-On Time
td(on)
-
34
-
VDD=15V
tr
td(off)
tf
-
-
-
35
70
12
-
-
-
VGS=-10V
Turn-Off Time
ID=-5A, RG=3.3Ω
REV1.0
- SEP 2010 RELEASED –
- 4 -
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
TA=25°C Unless specified
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Transfer Characteristics
5. Gate Charge
6. Drain Source Resistance
REV1.0
- SEP 2010 RELEASED –
- 5 -
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
7. Source Drain Diode Forward
8. Capacitance
9. Power Dissipation
10. Drain Current
11. Thermal Transient Impedance
REV1.0
- SEP 2010 RELEASED –
- 6 -
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm)
Symbol
Min
Max
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
c
D
E
E1
e
1.270(BSC)
L
0.400
0°
1.270
8°
θ
REV1.0
- SEP 2010 RELEASED –
- 7 -
AM4407
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servere property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- SEP 2010 RELEASED –
- 8 -
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