AM4409M8R [AITSEMI]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM4409M8R |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：868K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM4409 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density advanced trench technology..
-30V/-15A, RDS(ON)=5.5mΩ(typ.)@VGS=-10V
-30V/-10A, RDS(ON)=6.5mΩ(typ.)@VGS=-4.5V
Super high design for extremely low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application,
notebook computer power management and other
battery powered circuits where high-side switching
ESD Protected: 3kV
Available in SOP8 package.
AM4409 is available in SOP8 package.
ORDERING INFORMATION
APPLICATION
High Frequency Point-of-Load Synchronous
Networking DC-DC Power System
Load Switch
Package Type
Part Number
AM4409M8R
AM4409M8VR
SOP8
M8
SPQ: 3,000pcs/Reel
PIN DESCRIPTION
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
REV1.0
- MAR 2017 RELEASED -
- 1 -
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Source
Source
Source
Gate
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Drain
Drain
Drain
Drain
REV1.0
- MAR 2017 RELEASED -
- 2 -
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
VDSS, Drain-Source Voltage
-30V
±20V
VGSS, Gate-Source Voltage
ID, Continuous Drain Current(VGS=10V)
IDM, Pulsed Drain Current
TA=25℃
-17A
-80A
IS, Continuous Source Current (Diode Conduction)
-2.7A
TA=25oC
3.0W
PD, Power Dissipation
TA=70℃
2.1W
TJ, Operation Junction Temperature
TSTG, Storage Temperature Range
150℃
-55℃~150℃
85°C/W
RθJA, Thermal Resistance Junction to Ambient
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
REV1.0
- MAR 2017 RELEASED -
- 3 -
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Static Parameters
Symbol
Conditions
Min
Typ.
Max
Units
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,IDS=-250μA
-30
-
-1.3
-
-
V
V
VGS(th)
IGSS
VDS=VGS,IDS=-250μA
VDS=0V, VGS=±16V
VDS=-24V,VGS=0V
-1.0
-2.0
±10
±1
Gate Leakage Current
-
-
-
-
-
μA
-
Zero Gate Voltage Drain Current
IDSS
μA
TJ=55°C
-
±5
VGS=-20V,IDS=-15A
VGS=-10V,IDS=-10A
5.5
7.0
8.0
9.0
Drain-Source On-state Resistance RDS(ON)
Source-Drain Diode
mΩ
Diode Forward Voltage
Dynamic Parameters
Total Gate Charge
VSD
ISD=-1.0A,VGS=0V
-
-0.71
-1.0
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
37.08
10.12
11.24
3887
577
48.2
13.16
14.61
-
VDS=-15V, VGS=-4.5V,
IDS=-15A
Gate-Source Charge
Gate-Drain Charge
nC
pF
Input Capacitance
VDS=-15V, VGS=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
-
425
-
19.52
10.12
137.6
39.04
20.34
275.2
Turn-on Time
VDS=-15V, ID=-10A,
ns
VGEN=-10V, RG=6Ω
td(off)
Turn-off Time
tf
55.32 110.64
NOTE1: Pulse test; pulse width≤ 300μs, duty cycle≤ 2%.
NOTE2: Static parameters are based on package level with recommended wire bonding
REV1.0
- MAR 2017 RELEASED -
- 4 -
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
1. On-Region Characteristics
2. Transfer Characteristics
3. On-Resistance vs. Drain Current and Gate Voltage 4. On-Resistance vs. Junction Temperature
5. On-Resistance vs. Gate-Source Voltage
6. Body-Diode Characteristics
REV1.0
- MAR 2017 RELEASED -
- 5 -
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
7. Gate-Charge Characteristics
8. Capacitance Characteristics
9. Maximum Forward Biased Safe Operating Area
10. Single Pulse Power Rating Junction-to-Ambient
11. Normalized Maximum Transient Thermal Impedance
REV1.0
- MAR 2017 RELEASED -
- 6 -
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm)
Millimeters
Inches
MAX.
Symbol
MIN.
MAX.
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
MIN.
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
0.050(BSC)
0.050
8°
c
D
E
E1
e
1.270(BSC)
0.400
0°
L
1.270
0.016
θ
8°
0°
REV1.0
- MAR 2017 RELEASED -
- 7 -
AM4409
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- MAR 2017 RELEASED -
- 8 -
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