MSA-9970 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-9970 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-9970
Features
Description
70 mil Package
• Open Loop Feedback
Amplifier
The MSA-9970 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic high
reliability package. This MMIC is
designed with high open loop gain
and is intended to be used with
external resistive and reactive
feedback elements to create a
variety of special purpose gain
blocks.
• Performance Flexibility with
User Selected External
Feedback for:
Broadband Minimum
Ripple Amplifiers
Low Return Loss
Amplifiers
Negative Gain Slope
Amplifiers
The MSA-series is fabricated using
• Usable Gain to 6.0 GHz
HP’s10GHzf ,25 GHzf
,
Applications include very broad-
band, minimum ripple amplifiers
with extended low frequency
performance possible through the
use of a high valued external
feedback blocking capacitor;
extremely well matched (–20 dB
return loss) amplifiers; and
T
MAX
• 16.0 dB Typical Open Loop
Gain at 1.0 GHz
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• 14.5 dBm Typical P1dB at
1.0 GHz
• Hermetic Gold-ceramic
Microstrip Package
negative gain slope amplifiers for
flattening MMIC cascades.
Typical Biasing Configuration
USER SELECTABLE
C
f
R
R
bias
f
VCC ≥ 10 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
2
OUT
1
V
= 7.8 V
d
6-489
5965-9668E
MSA-9970 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,4]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
80 mA
750mW
+13dBm
200°C
θjc =150°C/W
–65°C to 200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE=25°C.
3. Derate at 6.7 mW/°C for TC > 88°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain[2](|S21|2)
f=0.1GHz
f=1.0GHz
f=4.0GHz
dB
17.5
16.0
9.0
14.5
8.0
17.5
10.0
P1 dB
IP3
Output Power at 1 dB Gain Compression[2]
Third Order Intercept Point[2]
Device Voltage
f=1.0GHz
f=1.0GHz
dBm
dBm
V
14.5
25.0
7.8
Vd
7.0
8.6
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current
is on the following page.
2. Open loop value. Adding external feedback will alter device performance.
6-490
MSA-9970 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.02
0.05
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
.89
.90
.90
.89
.87
.85
.82
.79
.72
.65
.59
.54
.53
.52
.53
.55
.55
.55
.56
.56
–1
–3
17.5
17.5
17.4
17.4
17.2
17.0
16.6
16.2
15.3
14.2
13.0
11.6
10.3
9.2
7.51 179
7.47 177
7.45 174
7.43 168
7.27 156
7.06 145
6.78 134
6.49 124
5.79 100
–37.2
–35.6
–33.2
–29.6
–24.4
–20.8
–18.8
–17.0
–14.6
–13.4
–12.9
–12.5
–12.4
–12.5
–12.6
–12.8
–13.2
–13.6
–13.8
–14.0
.014
.017
.022
.033
.061
.091
.115
.141
.186
.215
.227
.236
.239 –14
.238 –22
.234 –30
.228 –37
.220 –44
.209 –48
.203 –54
.201 –59
4
34
43
61
63
58
52
44
29
16
7
.93
.92
.93
.93
.91
.90
.87
.84
.74
.64
.57
.51
.45
.39
.34
.31
.30
.32
.37
.42
–1
–3
1.01
.83
.70
.39
.24
.21
.21
.24
.28
.34
.39
.46
.53
.59
.66
.72
.80
.88
.94
.97
–6
–6
–12
–24
–36
–47
–59
–86
–113
–133
–155
–174
168
152
140
130
121
114
107
–13
–27
–40
–53
–66
–96
–123
–143
–163
178
164
155
153
154
157
158
157
5.10
4.45
3.79
3.28
2.87
2.51
77
61
42
26
10
–4
–3
8.0
6.9
2.21 –17
1.94 –31
1.70 –43
1.50 –53
1.34 –63
5.8
4.6
3.5
2.6
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
50
40
30
20
21
19
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
I
= 45 mA
18
d
17
15
13
11
15
12
9
I
= 35 mA
d
6
I
= 25 mA
d
10
0
9
7
3
0
.05 0.1
0.3 0.5
1.0
3.0
6.0
0
2
4
6
8
10
0.1
0.2 0.3
0.5
1.0
2.0
4.0
V
(V)
FREQUENCY (GHz)
FREQUENCY (GHz)
d
Figure 1. Open Loop Power Gain vs.
Frequency, Id = 35 mA.
Figure 3. Open Loop Output Power at
1 dB Gain Compression vs. Frequency.
Figure 2. Device Current vs. Voltage.
17
20
0.1 GHz
1.0 GHz
16
15
G
p
15
14
10
4.0 GHz
P
1 dB
13
5
10
20
30
I
40
(mA)
50
–55 –25
+25
+85
+125
TEMPERATURE (°C)
d
Figure 5. Open Loop Output Power at
1 dB Gain Compression and Open Loop
Power Gain vs. Case Temperature,
f=1.0 GHz, Id = 35 mA.
Figure 4. Open Loop Power Gain vs.
Current.
6-491
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
1
3
Notes:
(unless otherwise specified)
2
GROUND
in
1. Dimensions are
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.070
1.70
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.035
.89
6-492
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