ADA-4743-BLK [AGILENT]
Silicon Bipolar Darlington Amplifier; 硅双极达林顿放大器
| 型号： | ADA-4743-BLK |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Silicon Bipolar Darlington Amplifier |
| 文件： | 总9页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent ADA-4743
Silicon Bipolar Darlington Amplifier
Data Sheet
Features
• Small Signal gain amplifier
• Operating frequency DC – 2.5 GHz
• Unconditionally stable
Surface Mount Package
Description
• 50 Ohms input & output
Agilent Technologies’ ADA-4743
is an economical, easy-to-use,
general purpose silicon bipolar
RFIC gain block amplifiers
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package which requires only half
the board space of a SOT-143
package.
SOT-343
• Flat, Broadband Frequency
Response up to 1 GHz
• Operating Current: 40 to 80 mA
• Industry standard SOT-343 package
• Lead-free option available
Specifications
900 MHz, 3.8V, 60 mA (typ.)
Pin Connections and
Package Marking
The Darlington feedback struc-
ture provides inherent broad
bandwidth performance, result-
ing in useful operating frequency
up to 2.5 GHz. This is an ideal
device for small-signal gain
• 16.5 dB associated gain
RFout
& Vd
• 17.1 dBm P1dB
GND
• 32.6 dBm OIP3
• 4.2 dB noise figure
GND
RFin
• VSWR < 2 throughput operating
cascades or IF amplification.
frequency
Note:
Top View. Package marking provides orientation
and identification.
• Single supply, typical Id = 60 mA
ADA-4743 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon
“3T” = Device Code
“x” = Date code character
identifies month of manufacture.
Applications
• Cellular/PCS/WLL base stations
process with self-aligned
• Wireless data/WLAN
• Fiber-optic systems
• ISM
submicron emitter geometry. The
process is capable of simulta-
neous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Typical Biasing Configuration
VCC
bypass
= 5 V
V
- V
d
cc
I
R
=
c
d
R
C
c
Attention:
RFC
Observe precautions for
handling electrostatic
sensitive devices.
C
block
RF
input
3Tx
RF
output
V
= 3.8 V
d
C
block
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
ADA-4743 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
Id
Device Current
mA
90
2. Ground lead temperature is 25°C.
Derate 6.1 mW/°C for TL >89°C .
3. Junction-to-case thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Pdiss
Pin max.
Tj
Total Power Dissipation[2]
RF Input Power
mW
dBm
°C
370
20
Channel Temperature
Storage Temperature
Thermal Resistance[3]
150
TSTG
θjc
°C
-65 to 150
163
°C/W
ADA-4743 Electrical Specifications
TA = 25°C, Zo=50Ω, Pin = -25 dBm, Id = 60 mA (unless specified otherwise)
Symbol
Parameter and Test Condition:
Frequency
Units
Min.
Typ.
Max.
Std. Dev.
Id = 60 mA, Zo = 50Ω
Vd
Device Voltage Id=60 mA
Power Gain (|S21|2
V
3.3
15
3.8
4.3
18
Gp
100 MHz
dB
16.6
16.5
900 MHz[1,2]
∆Gp
Gain Flatness
100 to 900 MHz
0.1 to 2 GHz
dB
0.5
1.5
F3dB
3 dB Bandwidth
GHz
4
VSMRin
VSMRout
NF
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50Ω Noise Figure
0.1 to 6 GHz
0.1 to 6 GHz
1.7:1
1.5:1
100 MHz
900 MHz[1,2]
dB
4.1
4.2
0.11
0.16
P1dB
OIP3
Output Power at 1dB Gain Compression
Output 3rd Order Intercept Point
100 MHz
dBm
dBm
mV/°C
17.7
17.1
900 MHz[1,2]
100 MHz[3]
33.4
32.6
900 MHz[1,2,3]
DV/dT
Device Voltage Temperature Coefficient
-4.9
Notes:
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. I) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone.
II) 100 MHz OIP3 test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone.
50 Ohm
Transmission
(0.5 dB loss)
50 Ohm
Input
Output
Transmission
including Bias
(0.5 dB loss)
DUT
Block diagram of 900 MHz production test board used for Vd, Gain, P1dB, OIP3, and NF measurements.
Circuit losses have been de-embedded from actual measurements.
2
Product Consistency Distribution Charts at 900 MHz, Id = 60 mA
300
250
200
150
100
50
240
200
160
120
80
40
0
0
3.3
17.5
15
15.5
16
16.5
17
18
3.5
3.7
3.9
4.1
4.3
GAIN (dB)
V
(V)
d
Figure 1. Gain distribution @ 60 mA.
LSL=15, Nominal=16.5, USL=18
Figure 2. V distribution @ 60 mA.
d
LSL=3.3, Nominal=3.8, USL=4.3
Notes:
1. Statistics distribution determined from a sample size of 500 parts taken from 3 different wafers.
2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.
ADA-4743 Typical Performance Curves (at 25°C, unless specified otherwise)
35
30
25
20
15
10
20
15
10
5
20
15
10
5
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency at I = 60 mA.
d
Figure 5. OIP vs. Frequency at I =60 mA.
3 d
Figure 4. P
vs. Frequency at I =60 mA.
d
1dB
6
5
4
3
2
90
80
70
60
50
40
30
20
10
17
16.5
16
-40°C
25°C
85°C
15.5
15
-40°C
25°C
85°C
14.5
14
0
0
0
1
2
3
4
5
6
1
2
3
4
5
0
20
40
60
(mA)
80
100
FREQUENCY (GHz)
V (V)
d
I
d
Figure 8. Gain vs. I and Temperature at 900 MHz.
Figure 6. NF vs. Frequency at I =60 mA.
Figure 7. I vs. V and Temperature.
d d
d
d
3
ADA-4743 Typical Performance Curves (at 25°C, unless specified otherwise), continued
40
35
30
25
20
15
10
20
15
10
5
6
5
4
3
2
1
0
-40°C
25°C
85°C
-40°C
25°C
85°C
-40°C
25°C
85°C
0
0
20
40
60
(mA)
80
100
0
20
40
60
(mA)
80
100
0
20
40
I
60
80
100
I
I
(mA)
d
d
d
Figure 9. P vs. I and Temperature
Figure 10. OIP vs. I and Temperature
Figure 11. NF vs. I and Temperature
d
1dB
d
3
d
at 900 MHz.
at 900 MHz.
at 900 MHz.
38
18
17
16
15
14
13
12
11
10
9
25
20
15
10
5
0.1
0.5
0.1
0.5
0.9
0.1
0.5
0.9
1.5
2.0
2.5
3
33
28
23
18
13
0.9
1.5
2.0
2.5
3
1.5
2.0
2.5
3
4
4
5
6
5
6
4
5
6
0
0
20
40
60
(mA)
d
80
100
0
20
40
60
(mA)
80
100
0
20
40
60
(mA)
80
100
I
I
I
d
d
Figure 12. Gain vs. I and Frequency (GHz).
d
Figure 13. P vs. I and Frequency (GHz).
Figure 14. OIP vs. I and Frequency (GHz).
1dB
d
3
d
0
-5
5.5
0
-5
6
5
5
4
3
-10
-15
-20
-25
-10
-15
-20
-25
2.5
2.0
4.5
1.5
0.9
0.5
0.1
Id=50 mA
Id=60 mA
Id=80 mA
Id=50 mA
Id=60 mA
Id=80 mA
4
3.5
0
20
40
I
60
80
100
0
2
4
6
8
10
12
0
2
4
6
8
10
12
(mA)
FREQUENCY (GHz)
FREQUENCY (GHz)
d
Figure 15. NF vs. I and Frequency (GHz).
Figure 16. Input Return Loss vs. I
and Frequency.
Figure 17. Output Return Loss vs. I
and Frequency.
d
d
d
4
ADA-4743 Typical Scattering Parameters, TA = 25°C, Id = 50 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
K
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.11
0.7
16.59
16.45
16.13
16.04
15.57
15.22
15.14
14.75
14.38
14.01
13.63
13.24
12.74
12.24
11.67
11.13
10.52
9.82
6.751
6.644
6.406
6.336
6.002
5.767
5.718
5.467
5.239
5.017
4.804
4.594
4.334
4.093
3.833
3.603
3.359
3.096
2.814
2.504
2.259
1.995
1.79
176.1
160.8
145.9
142.5
125.7
112.9
109.8
94.4
0.1
-0.8
-3.9
-6.2
-6.4
-7
0.192
0.191
0.214
0.218
0.232
0.232
0.231
0.221
0.209
0.204
0.215
0.244
0.276
0.309
0.338
0.364
0.393
0.427
0.462
0.501
0.541
0.583
0.62
-5.6
1.1
1.1
1.1
1.1
1.1
1.2
1.2
1.2
1.2
1.2
1.2
1.1
1.1
1.0
1.0
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.136
0.203
0.214
0.262
0.278
0.284
0.289
0.281
0.265
0.239
0.218
0.204
0.206
0.219
0.225
0.237
0.263
0.307
0.345
0.4
12.2
0.098
0.094
0.093
0.09
-17.2
-26.3
-29.65
-46.8
-60.6
-64
14.9
11.8
-4.1
-13.9
-16.6
-28.7
-40.4
-53.8
-70.5
-90.6
-114.3
-140
-163.7
172.6
147.8
121.8
97.6
78.9
63.8
0.088
0.088
0.087
0.089
0.092
0.098
0.105
0.114
0.125
0.137
0.152
0.167
0.179
0.188
0.194
0.202
0.21
-6.8
-6.7
-5.7
-4.6
-3.6
-3.1
-3.4
-4.9
-7.3
-11
-81.8
-102.3
-125.6
-149.2
-170.4
172.3
158.4
145.1
130.2
113.5
96.2
79.4
64.2
49.3
34.4
19.5
5.1
-9.5
-23.8
-38.2
-52.6
-66.6
-79.1
-91
-15.8
-22.1
-29.4
-37.2
-44.4
-50.8
-57.9
-65.1
8.99
79.1
7.97
65.4
7.08
54.3
0.45
50.6
6
-102.8
-113.5
44.3
0.496
40
5.05
0.215
35.7
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The
output reference plane is at the end of the output lead.
5
ADA-4743 Typical Scattering Parameters, TA = 25°C, Id = 60 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
K
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.102
0.131
0.199
0.204
0.257
0.275
0.28
0.5
16.7
6.836
6.73
176.1
160.7
145.8
142.3
125.5
112.7
109.6
94.2
0.099
0.097
0.094
0.093
0.089
0.088
0.087
0.087
0.089
0.092
0.097
0.105
0.114
0.125
0.138
0.152
0.167
0.18
-0.8
-3.8
-6
0.183
0.182
0.207
0.212
0.225
0.226
0.225
0.216
0.205
0.2
-5.6
1.1
1.1
1.1
1.1
1.1
1.2
1.2
1.2
1.2
1.2
1.2
1.1
1.1
1.0
1.0
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
14.2
16.56
16.24
16.15
15.68
15.33
15.25
14.85
14.48
14.09
13.71
13.31
12.8
-17
16.3
6.489
6.418
6.08
-25.9
-29
13.3
-6.3
-6.8
-6.6
-6.5
-5.5
-4.3
-3.3
-2.8
-3
-3.2
-46.4
-60.3
-63.7
-81.7
-102.4
-126
-149.7
-170.9
171.8
157.8
144.6
129.7
113
-12.9
-15.8
-27.7
-39.9
-53.6
-70.2
-91.2
-115.4
-141
-164.8
171.4
146.1
120.4
96.1
5.84
5.786
5.529
5.296
5.066
4.846
4.631
4.363
4.121
3.853
3.617
3.369
3.102
2.816
2.502
2.258
1.992
1.79
0.287
0.279
0.261
0.238
0.217
0.201
0.205
0.216
0.223
0.238
0.264
0.309
0.347
0.405
0.449
0.499
79
63.9
49
0.212
0.243
0.275
0.308
0.338
0.365
0.394
0.429
0.464
0.503
0.543
0.585
0.622
34.1
19.1
-4.6
-6.9
-10.7
-15.5
-21.9
-29.3
-37.1
-44.4
-50.7
-57.8
-65.1
12.3
4.6
11.72
11.17
10.55
9.83
-9.9
-24.2
-38.6
-52.9
-66.9
-79.4
-91.1
-103.1
-113.6
95.7
8.99
0.189
0.195
0.202
0.21
78.7
78.1
7.97
65
63.3
7.07
53.9
49.6
5.99
43.9
39.5
5.06
0.216
35.4
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The
output reference plane is at the end of the output lead.
6
ADA-4743 Typical Scattering Parameters, TA = 25°C, Id = 80 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
K
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.093
0.123
0.195
0.201
0.253
0.271
0.278
0.286
0.278
0.261
0.235
0.214
0.198
0.205
0.218
0.228
0.244
0.272
0.32
1.2
16.81
16.68
16.36
16.27
15.8
6.929
6.824
6.58
176.1
160.6
145.6
142
0.098
0.096
0.093
0.092
0.089
0.087
0.087
0.087
0.088
0.092
0.098
0.106
0.115
0.126
0.139
0.154
0.169
0.181
0.19
-0.7
-3.7
-5.7
-6.1
-6.6
-6.3
-6.2
-5.1
-3.8
-2.8
-2.2
-2.5
-4.2
-6.6
-10.5
-15.5
-22
0.172
0.172
0.197
0.203
0.217
0.218
0.218
0.21
-5.6
1.1
1.1
1.1
1.1
1.1
1.2
1.2
1.2
1.2
1.2
1.2
1.1
1.1
1.0
1.0
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
16.5
18.4
15
-16.7
-25.2
-28.4
-45.9
-59.8
-63.3
-81.5
-102.5
-126.5
-150.5
-171.9
170.7
156.7
143.4
128.5
111.7
94.4
6.51
-1.9
-12.3
-15.2
-27.3
-40
6.164
5.916
5.863
5.595
5.353
5.113
4.882
4.654
4.371
4.116
3.835
3.584
3.329
3.053
2.767
2.457
2.213
1.946
1.744
125.1
112.2
109
15.44
15.36
14.96
14.57
14.17
13.77
13.36
12.81
12.29
11.67
11.09
10.45
9.69
93.4
78.2
0.2
-54
62.9
0.196
0.209
0.241
0.274
0.307
0.337
0.364
0.393
0.427
0.462
0.5
-71.8
-93.2
-118
-144.6
-169
167.1
142
47.9
32.8
17.8
3.2
-11.4
-25.7
-40
117.4
94
-54.3
-68.2
-80.5
-91.9
-103.9
-114.2
-29.5
-37.3
-44.5
-50.9
-58
8.84
77.5
0.358
0.413
0.46
75.8
62
7.81
0.196
0.202
0.21
64
6.9
0.54
53
48.2
38
5.78
0.582
0.619
43.2
0.507
4.83
0.216
-65.1
34.8
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The
output reference plane is at the end of the output lead.
7
Ordering Information
Part Number
No. of Devices
Container
ADA-4743-TR1
ADA-4743-TR2
ADA-4743-BLK
ADA-4743-TR1G
ADA-4743-TR2G
ADA-4743-BLKG
3000
10000
100
7” Reel
13” Reel
antistatic bag
7” Reel
3000
10000
100
13” Reel
antistatic bag
Note: For lead-free option, the part number will have the character “G” at the end.
Recommended PCB Pad Layout for
Agilent’s SC70 4L/SOT-343 Products
Package Dimensions
Outline 43
SOT-343 (SC70 4-lead)
1.30
0.051
1.30 BSC
1.00
0.039
HE
E
2.00
0.079
0.60
0.024
b1
.090
0.035
D
1.15
0.045
A
A2
inches
mm
Dimensions in
A1
b
C
L
DIMENSIONS (mm)
SYMBOL
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.25
0.55
0.10
0.10
MAX.
1.35
E
D
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
HE
A
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
A2
A1
b
b1
c
L
6. Package surface to be mirror finish.
8
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
For Outline 4T
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
10° MAX.
10° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
1.50 0.10
4.00 0.10
1.75 0.10
0.061 + 0.002
0.157 0.004
0.069 0.004
P
E
CARRIER TAPE WIDTH
THICKNESS
W
8.00 + 0.30 - 0.10 0.315 + 0.012
t
0.254 0.02
0.0100 0.0008
1
COVER TAPE
WIDTH
C
5.40 0.10
0.205 + 0.004
TAPE THICKNESS
T
0.062 0.001
0.0025 0.0004
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
For product information and a complete list of Agilent
contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5988-9274EN
December 4, 2004
5989-1976EN
相关型号：
©2020 ICPDF网 联系我们和版权申明