ADA-4789 [AVAGO]
Silicon Bipolar Darlington Amplifier Small Signal Gain Amplifier; 硅双极达林顿放大器的小信号增益放大器
| 型号： | ADA-4789 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Silicon Bipolar Darlington Amplifier Small Signal Gain Amplifier |
| 文件： | 总13页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADA-4789
Silicon Bipolar Darlington Amplifier
Data Sheet
Description
Features
Avago Technologies’ ADA-4789 is an economical, easy-
to-use, general purpose silicon bipolar RFIC gain block
amplifiers housed in SOT-89 surface mount plastic pack-
age.
• Small Signal Gain Amplifier
• Operating Frequency: DC – 2.5 GHz
• Unconditionally Stable
• 50 Ohms Input & Output
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful oper-
ating frequency up to 2.5 GHz. This is an ideal device for
small-signal gain cascades or IF amplification.
• Flat, Broadband Frequency Response up to 1 GHz
• Operating Current: 40 – 80 mA
• Industry Standard SOT-89 Package
• Single Supply
ADA-4789 is fabricated using Avago’s HP25 silicon bi-
polar process, which employs a double-diffused single
poly-silicon process with self-aligned submicron emitter
geometry. The process is capable of simultaneous high
fT and high NPN breakdown (25 GHz fT at 6V BVCEO).
The process utilizes industry standard device oxide isola-
tion technologies and submicron aluminum multi-layer
inter-connects to achieve superior performance, high
uniformity, and proven reliability.
• VSWR < 2 Throughput Operating Frequency
Specifications
900MHz, 3.80V, 60mA (Typical)
• 16.50 dB Associated Gain
• 17.10 dBm P1dB
• 32.60 dBm OIP3
• 4.20 dB Noise Figure
900MHz, 4.10V, 80mA (Typical)
• 16.90 dB Associated Gain
• 18.80 dBm P1dB
Package Marking and Pin Connections
• 33.20 dBm OIP3
• 4.30 dB Noise Figure
4GX
Applications
#3
RFout
#2
#1
RFin
#1
RFin
#2
#3
• Cellular/PCS/WLL Base Stations
• Wireless Data/WLAN
• Fiber-Optic Systems
• ISM
GND
GND RFout
Top View
Bottom View
Note: Package marking provides orientation and identification
“4G”= Device Code
“x”= Month code indicates the month of manufacture
[1]
Table 1. Absolute Maximum Ratings at Tc = +25°C
Typical Biasing Configuration
Symbol
Id
Parameter
Unit
MaxRating
VCC =5 V
VCC - V d
RC
=
Device Current
mA
90
Id
R
C
c
bypass
Pdiss
Pin max
Tj
Total Power Dissipation[2] mW
370
RF Input Power
dBm
0C
0C
20
RFC
Junction Temperature
Storage Temperature
Thermal Resistance[3]
150
C
block
Tstg
qjc
-65 to 150
50
RF
input
3Tx
RF
output
0C/W
V
d = 3.8 V
C
block
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. Ground lead temperature is 25°C. Derate 20 mW/°C for Tc > 131.5
°C.
3. Thermal Resistance is measured from junction to board using IR
method.
Table 2. Electrical Specifications at Tc = +25°C
Symbol
Vd
Parameter and Test Condition:Id = 60mA, Zo = 50
W
Frequency
Units
Min.
3.3
Typ.
Max.
4.3
Device Voltage
V
3.8
Gp
Power Gain
100 MHz
dB
15
16.9
16.5
16.2
18
900 MHz [1,2]
2.0 GHz
Gp
Gain Flatness
100 to 900 MHz
0.1 to 2.0 GHz
dB
0.3
0.5
F3dB
3dB Bandwidth
GHz
4
VSWRin
VSWRout
NF
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50W Noise Figure
0.1 to 4.0 GHz
0.1 to 4.0 GHz
1.3:1
1.5:1
100 MHz
dB
4.1
4.2
4.4
900 MHz [1,2]
2.0 GHz
P1dB
OIP3
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Device Voltage Temperature Coefficient
100 MHz
dBm
dBm
mV/0C
16.0
27
17.7
17.1
16.2
900 MHz [1,2]
2.0 GHz
100 MHz [3]
900 MHz [1,2,3]
2.0 GHz [3]
33.4
32.6
28.8
dV/dT
Notes:
-4.9
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.
ii)900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone.
iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone.
2
Table 3. Typical Electrical performance at Tc = +25°C, Id=80mA, Zo= 50 W
Symbol
Vd
Parameter and Test Condition:
Device Voltage
Frequency
Units
V
Min.
Typ.
Max.
4.1
Gp
Power Gain
100 MHz
dB
17.1
16.9
16.3
900 MHz [1,2]
2.0 GHz
NF
50W Noise Figure
100 MHz
dB
4.1
4.3
4.5
900 MHz [1,2]
2.0 GHz
P1dB
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
100 MHz
dBm
dBm
19.3
18.8
16.9
900 MHz [1,2]
2.0 GHz
OIP3
100 MHz [3]
900 MHz [1,2,3]
2.0 GHz [3]
35.4
33.2
29
Notes:
1. Typical value determined from a sample size of 200 parts from 2 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3
i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.
ii) 900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone.
iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone.
Block Diagram
50 Ohm
Transmission
(0.5 dB loss)
50 Ohm
Input
Output
Transmission
including Bias
(0.5 dB loss)
DUT
Block diagram of 900 MHz production test board used for Vd, Gain, P1dB, OIP3, and NF measurements show in table
2 & 3. Circuit losses have been de-embedded from actual measurement.
3
Product Consistency Distribution Charts at 900 MHz, Id=60mA
Figure 1. Vd Distribution@60mA.
Figure 2. Gain Distribution@60mA.
LSL=3.3V, Nominal=3.8V, USL=4.3V
LSL=15 dB, Nominal=16.5 dB, USL=18 dB
Figure 3. P1dB Distribution@60mA
LSL=16.0 dBm, Nominal=17.1dBm
Figure 4. OIP3 Distribution@60mA.
LSL=27 dBm, Nominal=32.6 dBm
Notes:
1. Statistics distribution determined from a sample size of 500 parts taken from 3 different wafers.
2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.
Typical Performance Curve (at Tc=25°C, unless specified otherwise)
20
15
10
5
20
15
10
5
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)
Frequency (GHz)
Figure 5. Gain vs Frequency at Id = 60 mA.
Figure 6. P1dB vs Frequency at Id = 60 mA.
4
35
30
25
20
15
10
6
5
4
3
2
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)
Frequency (GHz)
Figure 7. OIP3 vs Frequency at Id = 60 mA.
Figure 8. NF vs Frequency at Id = 60 mA.
17.0
90
-40C
25C
85C
80
70
60
50
40
30
20
10
0
16.5
16.0
15.5
15.0
14.5
14.0
-40C
25C
85C
0
20
40
Id (mA)
60
80
100
0
1
2
3
4
5
Vd (V)
Figure 9. Id vs. Vd and Temperature.
Figure 10. Gain vs. Id and Temperature at 900 MHz.
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
6
-40C
25C
85C
4
-40C
25C
85C
2
0
0
0
0.02
0.04
0.06
0.08
0.1
0
20
40
60
80
100
Id (mA)
Id (mA)
Figure 11. P1dB vs. Id and Temperature at 900 MHz.
Figure 12. OIP3 vs. Id and Temperature at 900 MHz.
5
6
5
4
3
2
1
0
18
17
16
15
14
13
12
11
10
9
0.1
0.9
1.5
2
3
4
5
-40C
25C
85C
6
0
20
40
Id (mA)
60
80
100
0
20
40
60
80
100
Id (mA)
Figure 13. NF vs. Id and Temperature at 900 MHz.
Figure 14. Gain vs Id and Frequency (GHz).
20
0.1
0.9
1.5
2
40
35
30
25
20
15
10
0.1
15
10
5
0.9
1.5
2
3
4
5
3
4
5
6
6
0
0
20
40
60
80
100
0
20
40
60
80
100
Id (mA)
Id (mA)
Figure 15. P1dB vs Id and Frequency (GHz).
Figure 16. OIP3 vs Id and Frequency (GHz).
0
6
5.5
5
6
5
-5
-10
-15
-20
-25
4
3
2
4.5
4
1.5
0.9
Id=50mA
Id=60mA
Id=80mA
0.1
3.5
0
20
40
60
80
100
0
2
4
6
8
10
12
Id (mA)
Frequency (GHz)
Figure 17. NF vs Id and Frequency (GHz).
Figure 18. Input Return Loss vs Id and Frequency.
6
20
15
10
5
0
-5
-10
-15
-20
-25
Id=50mA
Id=60mA
Id=80mA
0
0
1
2
3
4
5
6
0
2
4
6
8
10
12
Frequency (GHz)
Frequency (GHz)
Figure 19. Output Return Loss vs Id and Frequency.
Figure 20. Gain vs Frequency at Id = 80 mA
20
40
35
30
25
20
15
10
15
10
5
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)
Frequency (GHz)
Figure 22. OIP3 vs Frequency at Id = 80 mA
Figure 21. P1dB vs Frequency at Id = 80 mA
6
5
4
3
2
0
1
2
3
4
5
6
Frequency (GHz)
Figure 23. NF vs Frequency at Id = 80 mA
7
Typical Scattering Parameters At 25°C, Id = 50mA
S11
S21
S12
S22
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Freq. GHz
0.1
0.168
0.110
0.087
0.083
0.093
0.103
0.095
0.114
0.154
0.196
0.246
0.344
0.405
0.489
0.540
0.582
0.625
0.667
0.696
0.728
0.737
0.738
3.0
16.469
16.213
16.182
16.172
15.741
15695
15.528
15.362
15.199
15.035
14.357
13.120
11.925
10.243
9.030
7.854
6.477
4.851
3.027
0.725
-0.715
-1.809
6.660
6.466
6.443
6.436
6.124
6.092
5.976
5.863
5.754
5.646
5.222
4.529
3.947
3.252
2.828
2.470
2.108
1.748
1.417
1.087
0.921
0.812
171.3
164.0
144.7
140.0
107.1
103.4
84.8
0.099
0.098
0.094
0.092
0.085
0.084
0.084
0.085
0.087
0.088
0.086
0.084
0.083
0.080
0.076
0.071
0.067
0.061
0.055
0.049
0.046
0.045
-0.2
0.168
0.188
0.157
0149
0.218
0.226
0.292
0.358
0.422
0.486
0.559
06.29
0.669
0.700
0.732
0.764
0.794
0.827
0.827
0.826
0.816
0.797
-8.4
0.5
-12.5
-50.0
-60.1
-155.0
-144.8
176.1
144.7
123.7
106.1
98.3
85.8
74.7
61.4
52.2
44.3
36.5
28.5
23.7
18.8
13.2
9.9
-7.0
-28.0
-72.9
-84.4
-110.7
-114.1
-146.6
181.0
149.3
115.4
100.4
87.6
73.2
59.1
47.9
37.3
26.6
16.0
12.5
9.2
0.9
-14.4
-19.2
-26.3
-27.1
-31.3
-35.4
-39.4
-43.6
-49.3
-56.4
-64.8
-72.9
-79.7
-86.8
-93.6
-100.6
-104.6
251.6
245.4
238.0
1.0
1.9
2.0
2.5
3.0
66.0
3.5
47.4
4.0
28.7
4.5
9.2
5.0
-11.0
-31.4
-50.4
-67.1
-82.5
-97.9
-113.2
-122.2
228.9
221.1
-148.1
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
6.2
10.0
1.8
Notes:
S parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the RFin lead.
The output reference plane is at the end of the RFout lead.
8
Typical Scattering Parameters At 25°C, Id = 60mA
S11
S21
S12
S22
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Freq. GHz
0.1
0.160
0.110
0.087
0.081
0.089
0.097
0.090
0.109
0.149
0.198
0.253
0.350
0.410
0.493
0.544
0.586
0.628
0.670
0.700
0.730
0.740
0.740
3.1
16.586
16.325
16.292
16.284
15.855
15.806
15.639
15.471
15.298
15.122
14.441
13.217
12.019
10.344
9.124
6.750
6.550
6.525
6.519
6.205
6.170
6.053
5.937
5.820
5.703
5.273
4.580
3.990
3.290
2.859
2.496
2.133
1.770
1.435
1.100
0.930
0.820
171.3
164.1
144.8
140.0
107.1
103.4
84.7
0.099
0.098
0.093
0.092
0.084
0.083
0.084
0.085
0.086
0.087
0.085
0.083
0.082
0.080
0.075
0.070
0.066
0.061
0.055
0.049
0.046
0.045
-0.2
0.160
0.180
0.150
0.143
0.212
0.220
0.287
0.353
0.420
0.487
0.560
0.630
0.670
0.703
0.735
0.767
0.798
0.830
0.830
0.830
0.820
0.800
-8.5
0.5
-6.1
-6.9
-30.7
-75.4
-86.6
-112.3
-115.2
-147.7
179.8
147.3
114.7
100.2
87.5
73.2
59.2
47.9
37.3
26.6
16.0
12.6
9.2
0.9
-44.2
-54.5
-151.3
-142.1
178.3
146.7
126.8
110.5
97.5
85.3
74.5
61.0
52.0
44.1
36.2
28.3
23.5
18.6
13.1
9.7
-14.2
-19.1
-26.3
-27.1
-31.2
-35.3
-39.3
-43.4
-49.1
-56.2
-64.6
-72.3
-79.3
-86.2
-93.1
-100.0
-104.0
252.0
246.0
238.6
1.0
1.9
2.0
2.5
3.0
66.0
3.5
47.4
4.0
28.7
4.5
9.3
5.0
-10.9
-31.3
-50.2
-66.9
-82.3
-97.6
-113.0
-122.0
229.1
221.4
-147.8
5.5
6.0
6.5
7.0
7.945
7.5
6.580
8.0
4.959
8.5
3.317
9.0
0.828
9.5
-0.630
-1.724
6.2
10.0
1.7
Notes:
S parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the RFin lead.
The output reference plane is at the end of the RFout lead.
9
Typical Scattering Parameters At 25°C, Id = 80mA
S11
S21
S12
S22
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Freq. GHz
0.1
0.151
0.112
0.087
0.081
0.086
0.093
0.085
0.104
0.145
0.199
0.259
0.356
0.417
0.500
0.551
0.592
0.634
0.674
0.705
0.733
0.743
0.744
3.1
16.716
16.45
16.416
16.408
15.980
15.931
15.768
15.596
15.414
15.227
14.543
13.319
12.108
10.428
9.191
8.000
6.629
4.994
3.161
0.844
-.0.602
-1.713
6.852
6.645
6.619
6.613
6.295
6.260
6.143
6.023
5.898
5.772
5.335
4.634
4.031
3.322
2.881
2.512
2.145
1.777
1.439
1.102
0.933
0.821
171.3
164.1
144.7
140.0
107.0
103.3
84.6
0.098
0.097
0.092
0.091
0.084
0.083
0.083
0.084
0.085
0.086
0.084
0.083
0.081
0.079
0.075
0.070
0.066
0.060
0.054
0.049
0.046
0.045
-0.2
0.150
0.171
0.142
0.135
0.204
0.212
0.279
0.347
0.417
0.487
0.562
0.630
0.670
0.702
0.735
0.767
0.798
0.830
0.830
0.830
0.820
0.800
-8.5
0.5
1.1
-6.8
-34.4
-78.4
-89.3
-114.1
-116.3
-148.7
178.6
144.7
113.6
99.6
87.1
73.0
59.0
47.8
37.1
26.5
15.9
12.5
9.1
0.9
-37.7
-48.0
-147.0
-138.8
181.0
148.5
129.5
114.6
98.5
85.3
74.4
60.9
51.8
43.9
36.0
28.0
23.3
18.4
12.9
9.6
-14.2
-18.9
-26.1
-27.0
-31.0
-35.1
-39.2
-43.2
-48.8
-55.9
-64.1
-72.1
-78.7
-85.6
-92.6
-99.6
-103.5
252.9
-113.4
239.1
1.0
1.9
2.0
2.5
3.0
65.8
3.5
47.2
4.0
28.5
4.5
9.0
5.0
-11.2
-31.6
-50.6
-67.2
-82.6
-97.9
-113.2
-122.1
229.0
221.4
-147.7
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
6.2
10.0
1.6
Notes:
S parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the RFin lead.
The output reference plane is at the end of the RFout lead.
10
Part Number Ordering Information
SOT89 Package Dimensions
D
D
POLISH
D1
D1
E1
L
E1
OR
E
E
L
e
e
C
S
e1
S
e1
1.625
D2
D1
MATTE FINISH
HALF ETCHING
DEPTH 0.100
A
OR
E
b
b1
b
POLISH
b1
Dimensions in mm
Dimensions in inches
Symbols
Minimum
1.40
0.89
0.36
0.41
0.38
4.40
1.40
1.45
3.94
2.40
2.90
0.65
1.40
Nominal
1.50
1.04
0.42
0.47
0.40
4.50
1.60
1.65
-
Maximum
1.60
1.20
0.48
0.53
0.43
4.60
1.75
1.80
4.25
2.60
3.10
0.85
1.60
Minimum
0.055
0.0350
0.014
0.016
0.014
0.173
0.055
0.055
0.155
0.094
0.114
0.026
0.054
Nominal
0.059
0.041
0.016
0.018
0.015
0.177
0.062
0.062
-
Maximum
0.063
0.047
0.018
0.030
0.017
0.181
0.069
0.069
0.167
0.102
0.122
0.034
0.063
A
L
b
b1
C
D
D1
D2
E
E1
e1
S
2.50
3.00
0.75
1.50
0.098
0.118
0.030
0.059
e
11
Device Orientation
REEL
CARRIER
TAPE
USER FEED
DIRECTION
COVER TAPE
Tape Dimensions
Ø 1.5 +0.1/-0.0
8.00
Ø 1.50 MIN.
2.00 .05 SEE NOTE 3
4.00 SEE NOTE 1
1.75 .10
0.30 .05
R 0.3 MAX.
A
A
5.50 .05
SEE NOTE 3
Bo
12.0 .3
Ko
R 0.3 TYP.
Ao
SECTION A - A
Ao = 4.60
Bo = 4.90
Ko = 1.90
DIMENSIONS IN MM
NOTES:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE 0.2
2. CAMBER IN COMPLIANCE WITH EIA 481
3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED
AS TRUE POSITION OF POCKET, NOT POCKET HOLE
12
Reel Dimensions – 13” Reel
R
R
LOKREEL
MINNEAPOLIS USA
U.S PAT 4726534
102.0
REF
ATTENTION
Electrostatic Sensitive Devices
Safe Handling Required
1.5
88 REF
330.0
REF
"A"
96.5
6
PS
Detail "B"
+0.3
- 0.2
(MEASURED AT HUB)
(MEASURED AT HUB)
8.4
6
PS
11.1 MAX.
Detail "A"
Ø 20.2
Dimensions in mm
Ø 13.0 +0.5
-0.2
2.0 0.5
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes AV01-0295EN
AV02-0052EN - May 23, 2013
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