ADP3422JRU [ADI]

IMVP-II-Compliant Core Power Controller for Mobile CPUs; IMVP - II兼容内核电源控制器,用于移动处理器
ADP3422JRU
型号: ADP3422JRU
厂家: ADI    ADI
描述:

IMVP-II-Compliant Core Power Controller for Mobile CPUs
IMVP - II兼容内核电源控制器,用于移动处理器

电源电路 电源管理电路 光电二极管 控制器
文件: 总16页 (文件大小:172K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IMVP-II-Compliant  
Core Power Controller for Mobile CPUs  
a
ADP3422  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Certified IMVP-II Controller  
Excellent Transient Containment  
Minimum Number of Output Capacitors  
Fast, Smooth, Output Transition During VID Code Change  
Current Limit with Hiccup Protection  
Transient-Glitch-Free Power Good  
Low Shutdown Current  
Soft Start Eliminates In-Rush Current Surge  
Adaptive Noise-Blanking Enhancement for Speed and  
Stability  
Highly Redundant Over-Voltage and Reverse-Voltage  
Protection  
VCC  
ADP3422  
HYSSET  
CPUSET  
FSHIFT  
DSHIFT  
BSHIFT  
HYSTERESIS  
AND  
SHIFT-SETTING  
VR  
CS+  
CS–  
CLIM  
VID4  
VID3  
VID2  
VID1  
VID0  
EN  
CORE  
RAMP  
REG  
Controls Synchronous Rectifier for Improved Battery Life  
PROGRAMMED  
DAC  
AND  
APPLICATIONS  
FIXED  
REFERENCE  
IMVP-II Enabled Core DC/DC Converters  
Fixed-Voltage Mobile CPU Core DC/DC Converters  
Notebook/Laptop Power Supplies  
Programmable Output Power Supplies  
OUT  
DACOUT  
SWFB  
VR  
VCC  
GENERAL DESCRIPTION  
The ADP3422 is a hysteretic dc-dc buck converter controller to  
power a mobile processor’s core. The optimized low voltage  
design is powered from the 3.3 V system supply. The output  
voltage is set by a 5-bit VID code. To accommodate the transition  
time required by the newest processors for on-the-fly VID  
changes, the ADP3422 features high-speed operation to allow a  
minimized inductor size that results in the fastest change of  
current to the output. To further allow for the minimum number  
of output capacitors to be used, the ADP3422 features active  
voltage positioning that can be optimally compensated to ensure a  
superior load transient response. The output signal interfaces  
with the ADP3415 MOSFET driver that is optimized for high  
speed and high efficiency for driving both the upper and lower  
(synchronous) MOSFETs of the buck converter.  
UVLO AND MAIN BIAS  
PWRGD BLANKER  
SR CONTROL  
BOM  
DSLP  
COREFB  
SS  
PWRGD MONITOR  
DPRSLP  
PWRGD  
SD  
SS-HICCUPTIMER AND OCP  
DRVLSD  
CLAMP  
OP MODE  
SELECTOR  
OVP AND RVP  
POWER MANAGEMENT  
GND  
REV. 0  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat  
may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
www.analog.com  
© Analog Devices, Inc., 2001  
ADP3422–SPECIFICATIONS  
ELECTRICAL CHARACTERISTICS1  
(0 TA 85؇C, High (H) = VCC, Low (L) = 0 V, VCC = 3.3 V, SD = H, VCOREFB = VDAC  
(VDACOUT), VREG = VCS– = VVID = 1.25 V, VCPUSET = 0 V, ROUT = 100 k, COUT = 10 pF, CSS = 47 nF, RPWRGD = 5 kto VCC, RCLAMP = 5.1 k⍀  
to VCC, HYSSET, BSHIFT, DSHIFT, and FSHIFT are open, BOM = H, DSLP = H, DPRSLP = L, SWFB = L, unless otherwise noted. Current sunk  
by a pin has a positive sign, sourced by a pin has a negative sign.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
SUPPLY-UVLO-SHUTDOWN  
Normal Supply Current  
UVLO Supply Current  
Shutdown Supply Current  
UVLO Threshold  
ICC  
ICC(UVLO)  
ICCSD  
6
1
15  
200  
mA  
µA  
SD = L  
µA  
VCCH  
VCCL  
VCCHYS  
VCC Rising Up, VSS = 0 V  
VCC Falling, VSS Floating  
2.95  
V
V
mV  
2.7  
50  
UVLO Hysteresis  
Shutdown Threshold (CMOS Input) VSDTH  
VCC/2  
POWERGOOD  
Core Feedback Threshold Voltage  
VCOREFBH  
0.9 V < VDAC < 1.675 V  
V
COREFB Rising  
1.12 VDAC  
1.095 VDAC  
0.88 VDAC  
0.855 VDAC  
0.95 VCC  
0
1.145 VDAC  
1.12 VDAC  
0.905 VDAC  
0.88 VDAC  
VCC  
V
V
V
V
V
V
µs  
VCOREFB Falling  
V
V
COREFB Rising  
COREFB Falling  
PowerGood Output Voltage  
(Open Drain Output)  
Blanking Time  
VPWRGD  
VCOREFB = VDACOUT  
COREFB = 0.8 VDACOUT  
tPWRGD,BLNK VCC = 3.3 V  
V
0.8  
2
100  
SOFT-START/HICCUP TIMER  
Charge/Discharge Current  
ISS  
VSS = 0.5 V  
VSS = 0.5 V, VCC = 2.5 V  
VREG = 1.25 V,  
–16  
0.6  
µA  
µA  
Soft-Start Enable/Hiccup  
Termination Threshold  
VSSEN  
V
RAMP = VCOREFB = 1.27 V  
VSS Falling  
SS Rising  
150  
200  
200  
mV  
mV  
V
Soft-Start Termination/Hiccup  
Enable Threshold  
VSSTERM  
VRAMP = VCOREFB = 1.27 V  
VSS Rising  
VSS Falling  
2.05  
2.0  
V
V
VID DAC  
VID Input Threshold (CMOS Inputs) VVID0...4  
0.8  
10  
0.7 VCC  
40  
V
µA  
VID Input Current  
IVID0...4  
VID 0...4 = L  
(Internal Active Pull-up)  
Output Voltage  
VDAC  
See VID Code Table 1  
0.600  
–0.85  
1.750  
+0.85  
V
%
µs  
Output Voltage Accuracy  
VDAC/VDAC  
tDACS  
4
Output Voltage Settling Time3  
1.3  
CORE COMPARATOR  
Input Offset Voltage  
Input Bias Current  
Output Voltage  
VCOREOS  
IREG  
VOUT_H  
VOUT_L  
VREG = 1.25 V  
VREG = VRAMP = 1.25 V  
VCC = 3.0 V  
1.5  
0.3  
mV  
µA  
V
2.5  
0
3.0  
0.4  
VCC = 3.6 V  
V
Propagation Delay Time3  
Rise and Fall Time2  
tRMPOUT_PD  
50  
ns  
ns  
ns  
ns  
ns  
V
5
6
tOUT_R  
tOUT_F  
3
3
10  
10  
6
Blanking Time  
tBLNK  
OUT L-H Transition  
OUT H-L Transition  
75  
140  
VCC/2  
Switch Feedback Threshold  
(CMOS Input)  
VSWFB_TH  
–2–  
REV. 0  
ADP3422  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
HYSTERESIS SETTING  
Hysteresis Current  
IRAMP_H  
VREG = 1.25 V  
VCOREFB = VDAC  
IHYSSET = 0  
VRAMP = 1.23 V, BOM = H  
IHYSSET = –10 µA  
1
µA  
+8  
+89  
+10  
+100  
+12  
+111  
µA  
µA  
I
HYSSET = –100 µA  
VRAMP = 1.27 V, BOM = H  
IHYSSET = –10 µA  
I
VRAMP = 1.23 V, BOM = L  
IHYSSET = –10 µA  
I
VRAMP = 1.27 V, BOM = L  
IHYSSET = –10 µA  
I
–8  
–89  
–10  
–100  
–12  
–111  
µA  
µA  
HYSSET = –100 µA  
+6.4  
+71  
+8  
+80  
+9.6  
+89  
µA  
µA  
HYSSET = –100 µA  
–6.4  
–71  
1.61  
–8  
–80  
1.7  
–9.6  
–89  
1.79  
µA  
µA  
V
HYSSET = –100 µA  
Hysteresis Reference Voltage  
VHYSSET  
IRAMPB  
SHIFT SETTING  
Battery-Shift Current  
VVID = 1.25 V  
–92.5  
–92.5  
–92.5  
–100  
–107.5  
–107.5  
–107.5  
µA  
I
BSHIFT = –100 µA, BOM = L  
DSLP = H, VCPUSET = 0 V  
Battery-Shift Reference Voltage  
DeepSleep-Shift Current  
VBSHIFT  
IRAMPD  
VDAC  
–100  
V
µA  
VVID = 1.25 V  
IDSHIFT = –100 µA, BOM = H  
DSLP = L, VCPUSET = 0 V  
DeepSleep-Shift Reference Voltage  
CPU-FID-Shift Current  
VDSHIFT  
IRAMPF  
VDAC  
–100  
V
µA  
VVID = 1.25 V  
I
FSHIFT = –100 µA, BOM = L  
DSLP = H, VCPUSET = 2 V  
CPU-FID-Shift Reference Voltage  
VFSHIFT  
VDAC  
V
SHIFT CONTROL INPUTS  
BOM Threshold  
(CMOS Input)  
DSLP Threshold  
(IO-Level CMOS Input)  
DPRSLP Mode Threshold  
(CMOS Input)  
VBOM  
VCC/2  
0.9  
V
V
V
VDSLP  
VDPRSLP  
VCC/2  
CURRENT LIMIT COMPARATOR  
Input Offset Voltage  
Input Bias Current  
VCLIMOS  
ICS+  
ICS–  
VCS– = 1.25 V  
VCS+ = 1.25 V  
VCOREFB = VRAMP = 1.23 V  
0.2  
–0.3  
6
mV  
µA  
Hysteresis Current  
V
REG = VCS– = 1.25 V  
IHYSSET = 0  
–0.6  
–3  
µA  
VCS+ = 1.23 V BOM = H  
I
HYSSET = –10 µA  
–27  
–270  
–31.5  
–301.5 –333  
–1.5  
–21.5  
–36  
µA  
µA  
µA  
µA  
µA  
IHYSSET = –100 µA  
VCS+ = 1.27 V, BOM = H  
–3  
–25  
I
HYSSET = –10 µA  
–18  
–180  
IHYSSET = –100 µA  
–201.5 –223  
VCS+ = 1.23 V, BOM = L  
I
HYSSET = –10 µA  
–21  
–226  
–25.5  
–241.5 –267  
–30  
µA  
µA  
IHYSSET = –100 µA  
CS+ = 1.27 V, BOM = L  
V
I
HYSSET = –10 µA  
–14  
–144  
–17.5  
–161.5 –179  
65  
–21  
µA  
µA  
ns  
IHYSSET = –100 µA  
5
Propagation Delay Time  
tCLPD  
–3–  
REV. 0  
ADP3422–SPECIFICATIONS (continued)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
LOW-SIDE DRIVE CONTROL  
Output Voltage (CMOS Output)  
VDRVLSD  
IDRVLSD  
DPRSLP = H  
DPRSLP = L  
VDRVLSD = 1.5 V  
DPRSLP = L  
DPRSLP = H  
0.4  
VCC  
V
V
0.7 VCC  
Output Current  
+0.4  
–0.4  
mA  
mA  
OVER/REVERSE VOLTAGE  
PROTECTION  
Over-Voltage Threshold  
VCOREFB,OVP VCOREFB Rising  
VCOREFB Falling  
VCOREFB,RVP VCOREFB Falling  
2.0  
1.8  
–0.3  
–0.05  
2.2  
10  
V
V
V
V
Reverse-Voltage Threshold  
VCOREFB Rising  
Output Current (Open Drain Output) ICLAMP  
VCLAMP = 1.5 V  
COREFB = 2.2 V  
VCOREFB = VDACOUT = 1.25 V  
V
µA  
mA  
1
4
NOTES  
1All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.  
2Two test conditions:  
1. PWRGD is OK but forced to fail by applying an out-of-the-CoreGood-window voltage (VCOREFB,BAD = 1.0 V at VVID = 1.25 V setting) to the COREFB pin right  
after the moment that BOM or DPRSLP is asserted/deasserted. PWRGD should not fail immediately, only with the specified blanking delay time.  
2. PWRGD is forced to fail (VCOREFB,BAD = 1.0 V at VVID = 1.25 V setting) but gets into the CoreGood-window (VCOREFB,GOOD = 1.25 V) right after the moment that  
BOM or DPRSLP is asserted/deasserted. PWRGD should not go high immediately, only with the specified blanking delay time.  
3Guaranteed by characterization.  
4Measured from 50% of VID code transition amplitude to the point where VDACOUT settles within 1% of its steady state value.  
540 mV p-p amplitude impulse with 20 mV overdrive. Measured from the input threshold intercept point to 50% of the output voltage swing.  
6Measured between the 30% and 70% points of the output voltage swing.  
Specifications subject to change without notice.  
–4–  
REV. 0  
ADP3422  
PIN CONFIGURATION  
ABSOLUTE MAXIMUM RATINGS*  
Input Supply Voltage (VCC) . . . . . . . . . . . . . . –0.3 V to +7 V  
UVLO Input Voltage . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V  
All Other Inputs/Outputs . . . . . . . . . –0.3 V to (VCC + 0.3 V)  
Operating Ambient Temperature Range . . . . . . . 0°C to 85°C  
Junction Temperature Range . . . . . . . . . . . . . . . 0°C to 150°C  
θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98°C/W  
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C  
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300°C  
HYSSET  
1
2
3
4
5
6
7
8
9
28  
27  
26  
25  
24  
CS–  
CS+  
REG  
CPUSET  
FSHIFT  
DSHIFT  
BSHIFT  
VID4 (MSB)  
VID3  
RAMP  
VCC  
23 OUT  
GND  
ADP3422  
TOPVIEW  
(Not to Scale)  
22  
*This is a stress rating only; operation beyond these limits can cause the device to  
be permanently damaged.  
21 DACOUT  
VID2  
20  
VID1  
COREFB  
SS  
VID0 (LSB) 10  
19  
18  
17  
11  
BOM  
SWFB  
DRVLSD  
12  
DSLP  
ORDERING GUIDE  
13  
16 CLAMP  
15  
DPRSLP  
Temperature Package  
Range Description  
Package  
Option  
14  
PWRGD  
SD  
Model  
ADP3422JRU 0°C to 85°C  
Thin Shrink Small RU-28  
Outline (TSSOP)  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection. Although  
the ADP3422 features proprietary ESD protection circuitry, permanent damage may occur on  
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are  
recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
REV. 0  
–5–  
ADP3422  
PIN FUNCTION DESCRIPTIONS  
Pin No.  
Mnemonic  
Function  
1
HYSSET  
Hysteresis Set. This is an analog I/O pin whose output is a voltage reference and whose input is a  
current that is programmed by an external resistance to ground. The current is used in the IC to set  
the hysteretic currents for the Core Comparator and the Current Limit Comparator. Modification of the  
resistance will affect both the hysteresis of the feedback regulation and the current limit set point and  
hysteresis. The application circuit suggests a resistor divider, as this pin’s functionality is used to supply a  
divided reference voltage to another high-impedance pin.  
2
CPUSET  
CPU Set. This is a high-impedance analog input pin to which a reference voltage is applied via a  
resistor divider (e.g., from the HYSSET pin). The applied reference to this pin sets a threshold that  
lies between two VID codes, each of which represents the Battery Optimized Mode (BOM) VID code  
of a certain CPU. At startup of the CPU regulator, the BOM VID code is received and the corresponding  
DACOUT voltage is compared against the CPUSET voltage. The type of CPU is then categorized  
as being in one of two frequency categories, the lower of which has a lower BOM VID code. The  
information is latched into the IC and, if the lower frequency CPU has been detected, is used to add  
a downward shift of the regulated core voltage to the optimum level. The shift is performed using the  
FSHIFT and RAMP pins.  
3
FSHIFT  
Frequency Shift. This is an analog I/O pin whose output is a voltage reference and whose input is a  
current that is programmed by an external resistance to ground. The current is used in the IC to  
set a switched bias current out of the RAMP pin, depending on whether it is activated by the  
latched function of the CPUSET pin. When activated, this added bias current creates a downward  
shift of the regulated core voltage to a predetermined optimum level for regulation corresponding  
to the frequency range of the CPU.  
4
5
DSHIFT  
BSHIFT  
Deep Sleep Shift. This is an analog I/O pin whose output is a voltage reference and whose input is a  
current that is programmed by an external resistance to ground. The current is used in the IC to  
set a switched bias current out of the RAMP pin, depending on whether it is activated by the DSLP  
signal. When activated, this added bias current creates a downward shift of the regulated core voltage  
to a predetermined optimum level for regulation corresponding to Deep Sleep mode of CPU operation.  
Battery Optimized Mode Shift. This is an analog I/O pin whose output is a voltage reference and  
whose input is a current that is programmed by an external resistance to ground. The current is  
used in the IC to set a switched bias current out of the RAMP pin, depending on whether it is activated by  
the BOM signal. When activated, this added bias current creates a downward shift of the regulated core  
voltage to a predetermined optimum level for regulation corresponding to Battery Optimized Mode of  
CPU operation.  
6
VID4  
VID3  
VID2  
VID1  
VID0  
BOM  
VID Input. Most significant bit.  
VID Input  
7
8
VID Input  
9
VID Input  
10  
11  
VID Input. Least significant bit.  
Battery Optimized Mode (active low). This is a digital input pin coming from a system signal  
corresponding to Battery Optimized Mode of the CPU operation in its active low state and Performance  
Optimized Mode (POM) in its disactivated high state. The signal controls the optimal positioning  
of the core voltage regulation level according to the functionality of the BSHIFT and RAMP pins.  
It is also used to initiate a blanking period for the PWRGD signal (to disable its response to a pending  
dynamic core voltage change according to the VID code) whenever a signal transition occurs.  
12  
DSLP  
Deep Sleep Mode (active low). This is a digital input pin coming from a system signal which, in  
its active state, corresponds to Deep Sleep mode of the CPU, which is a subset operating mode of  
either BOM or POM operation. The signal controls the optimal positioning of the core voltage regulation  
level according to the functionality of the DSHIFT and RAMP pins.  
–6–  
REV. 0  
ADP3422  
Pin No.  
Mnemonic  
Function  
13  
DPRSLP  
Deeper Sleep Mode (active high). This is a digital input pin coming from a system signal corresponding to  
Deeper Sleep mode of the CPU operation in its active high state. It is used to initiate a blanking period  
for the PWRGD signal (to disable its response to a pending dynamic core voltage change according to the  
VID code) whenever a signal transition occurs.  
14  
PWRGD  
Power Good (active high). This is an open drain output pin which, via the assistance of an external  
pull-up resistor, indicates that the core voltage is within the specified tolerance of the VID programmed  
value or else in a VID transition state as indicated by a recent state transition of either the BOM or  
DPRSLP pins. PWRGD is deactivated (pulled low) when the IC is disabled or in UVLO mode or  
soft-start. The open drain output allows external ORing with other open drain/collector power-  
good indicators.  
15  
16  
SD  
Shutdown (active low). This is a digital input pin coming from a system signal which, in its active  
state, shuts down the IC operation, placing the IC in its lowest quiescent current state for maximum  
power savings.  
CLAMP  
Clamp (active high). This is an open drain output pin which, via the assistance of an external pull-up  
resistor, indicates that the core voltage should be clamped for its protection. To allow the highest  
level of protection, the CLAMP signal is developed using both a redundant reference and a re-  
dundant feedback path with respect to those of the main regulation loop. It is also latched. In a  
preferred and more conservative configuration, the core voltage is clamped by an external FET.  
The initial protection function is served when it is activated by detection of either an overvoltage or a  
reverse-voltage condition on the COREFB pin. A backup protection function due to loss of the  
latched signal at IC power-off is served by connecting the pull-up resistor to a system “ALWAYS”  
regulator output (e.g., V5_ALWAYS). If the external FET is used, this implementation will keep the  
core voltage clamped until the ADP3422 has power reapplied, thus keeping protection for the  
CPU even after a hard-failure power-down and restart (e.g., a shorted top FET).  
17  
18  
DRVLSD  
Drive-Low Shutdown (active low). This is a digital output pin which, in its active state, indicates that  
the lower FET of the core VR should be disabled. In the suggested application schematic this pin is  
directly connected to the pin of the same name on the ADP3415 or other driver IC. The pin is normally  
asserted in the light load condition, but its assertion will be deactivated by the consideration of a  
number of dynamic conditions where operation of the lower FET may be needed.  
SWFB  
Switched Node Feedback. This is a high-impedance analog input pin that is used to allow the  
ON-time noise blanking function to terminate earlier than its internally preset time by its indication  
that the turn-ON of the upper FET has occurred. A resistor must be inserted between the pin and the  
switched node of the core VR so that the input can be clamped (at ~7V) and is not exposed to  
high voltage. This pin can also be shorted to ground if the need for this speed enhancement is  
deemed unnecessary.  
19  
SS  
Soft Start. This is an analog I/O pin whose output is a controlled current source used to charge or  
discharge an external grounded capacitor and whose input is the detected voltage that is indicative of  
elapsed time. The pin controls the soft start time of the IC as well as the hiccup cycle time during  
short circuit. Hiccup operation is a feature that was added to reduce short circuit power dissipation by  
more than an order of magnitude, while still allowing an automatic restart when the short is removed.  
20  
21  
COREFB  
DACOUT  
Core Feedback. This is a high-impedance analog input pin that is used to monitor the output voltage  
for setting the proper state of the PWRGD and CLAMP pins. It is generally recommended to  
RC-filter the noise from the monitored core voltage, as suggested by the application schematic.  
VID-Programmed Digital-to-Analog Converter Output. This voltage is the reference voltage for output  
voltage regulation.  
22  
23  
GND  
OUT  
Ground  
Driver Command Output Signal. This is a digital output pin which is used to command the state of the  
switched node via the driver. It should be connected to the IN pin of the ADP3415 or similar driver.  
24  
VCC  
Power Supply  
REV. 0  
–7–  
ADP3422  
Pin No.  
Mnemonic  
Function  
25  
RAMP  
Regulation Ramp Feedback Input. This is a high-impedance analog input pin which is used for providing  
negative feedback of the hysteretically-controlled output. Several switched current sources also  
appear at this input, most notably the cycle-by-cycle hysteresis-setting switched current programmed by  
the HYSSET pin. The external resistive termination at this pin sets the magnitude of the hysteresis  
applied to the regulation loop.  
26  
REG  
Regulation Voltage Summing Input. This is a high-impedance analog input pin into which the voltage  
reference of the feedback loop allows the summing of both the DACOUT voltage and the core voltage for  
programming the output resistance of the core voltage regulator. This is also the pin at which an optimized  
transient response can be tailored using Analog Devices’ patented ADOPT™ design technique.  
27  
28  
CS+  
CS–  
Current Limit Positive Sense. This is a high-impedance analog input pin that is normally connected to the  
positive node of the current sense resistor.  
Current Limit Negative Sense. This is a high-impedance analog input pin that is normally connected via  
a current-limit programming resistor to the negative node of the current sense resistor. A hysteretically-  
controlled current—three times the current programmed at the HYSSET pin—flows out of this pin  
and develops a current-limit-setting voltage across that resistor. This voltage must be exceeded by the  
inductor current generated current sense voltage in order to trigger the current limit function. When it is  
triggered, the current flowing out of this pin is reduced—to two-thirds of its previous value—producing  
hysteresis in the current limit operation.  
ADOPT is a trademark of Analog Devices, Inc.  
–8–  
REV. 0  
Typical Performance CharacteristicsADP3422  
100  
10000  
1000  
100  
10  
OUT = HIGH, RHYS = 17k  
NORMAL OPERATING MODE  
OUT = HIGH, RHYS = 170k⍀  
UVLO MODE  
0
OUT = LOW, RHYS = 170k⍀  
1
OUT = LOW, RHYS = 17k⍀  
100  
SHUTDOWN MODE  
0.1  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
TEMPERATURE ؇C  
TEMPERATURE ؇C  
TPC 1. Supply Current vs. Temperature  
TPC 4. Core Hysteresis Current vs. Temperature  
0
+0.85%  
1.765  
50  
100  
150  
200  
250  
300  
350  
OUT = LOW, R  
= 170k⍀  
HYSSET  
FULL SCALE  
OUT = HIGH, R  
= 170k⍀  
HYSSET  
1.750  
0.85%  
1.735  
0.605  
OUT = LOW, R  
= 17k⍀  
HYSSET  
+0.85%  
0.600  
0.595  
ZERO SCALE  
OUT = HIGH, R  
20  
= 17k⍀  
HYSSET  
0.85%  
0
20  
40  
60  
80  
100  
0
40  
60  
80  
100  
AMBIENT TEMPERATURE ؇C  
TEMPERATURE ؇C  
TPC 2. DAC Output Voltage vs. Temperature  
TPC 5. Current Limit Programming Current  
vs. Temperature  
100  
10  
HIGH  
1
0.1  
0.01  
LOW  
15  
10  
5  
0
5
10  
15  
0.1  
1
10  
100  
RELATIVE CORE VOLTAGE %  
TIMING CAPACITANCE nF  
TPC 3. Power Good vs. Relative Core Voltage Variation  
TPC 6. Soft-Start Time vs. Timing Capacitance  
–9–  
REV. 0  
ADP3422  
APPLICATION INFORMATION  
V
IN  
This application section presents both the theoretical background  
and the detailed procedure for designing dc/dc converters with  
the ADP3422 controller for mobile CPUs. The ADP3422 is  
used in a unique ripple regulator (also called hysteretic regulator)  
configuration, which allows employing ADOPT, Analog Devices’  
optimal voltage positioning technique to implement the output  
desired voltage impedance statically and dynamically, as required  
by Intel’s IMVP-2 specification.  
Q1  
Q2  
L
I
R
V
OUT  
L
CS  
C
O
C
LOAD  
OC  
R
R
R
E
C
D
V
H
V
REF  
Hysteretic Regulator  
Figure 1 shows the conventional hysteretic regulator and the  
characteristic waveforms. The operation is as follows. During  
the time the upper transistor, Q1, is turned on, the inductor  
current, IL, and also the output voltage, VOUT, increase. When  
Figure 2. Modified Hysteretic Regulator with ADOPT  
The implementation requires adding a resistive divider (RC and  
RD) between the reference voltage and the output, and connecting  
the tap of the divider to the noninverting input of the hysteretic  
comparator. A capacitor, COC, is placed across the upper mem-  
ber (RC) of the divider.  
V
OUT reaches the upper threshold of the hysteretic comparator,  
Q1 is turned off, Q2 is turned on, and the inductor current and also  
the output voltage begin to decrease. The cycle repeats after  
VOUT reaches the lower threshold of the hysteretic comparator.  
It is easily shown that the output impedance of the converter can  
be no less than the ESR of the output capacitor. A straightfor-  
ward derivation demonstrates that the output impedance of the  
converter in Figure 2 can be minimized to equal the ESR, RE,  
when the following two equations are valid (neglecting PCB  
trace resistance for now):  
V
IN  
V
OUT  
V
Q1  
H
L
I
V
L
OUT  
V
SW  
V
SW  
C
O
LOAD  
Q2  
R
E
RD RE RCS  
=
(2)  
I
L
RC  
RCS  
V
H
and  
V
REF  
CORE2  
RCSRD  
COC  
=
(3)  
Figure 1. Conventional Hysteretic Regulator and Its  
Characteristic Waveforms  
From (3), the series resistance is:  
The switching frequency is determined by the equivalent series  
resistance RE of the output capacitor, the inductance L of the  
inductor, the input and output voltages, and the hysteresis  
VH of the comparator. It is as follows:  
RE  
RCS  
=
RD  
RC  
(4)  
1+  
RE (VIN VOUT )VOUT  
This is the ADOPT configuration and design procedure that  
allows the maximum possible ESR to be used while meeting a  
given load-line specification.  
f =  
(1)  
LVH  
VIN  
Since there is no voltage-error amplifier in the hysteretic regulator,  
its response to any change in the load current or the input volt-  
age is virtually instantaneous. Therefore, the hysteretic regulator  
represents the fastest possible dc/dc converter control technique.  
A slight disadvantage of the hysteretic regulator is that its frequency  
varies with the input and output voltages. In a typical mobile CPU  
converter application, the worst-case frequency variation due to  
the input voltage variation is in the order of 30%, which is usu-  
ally acceptable. In the simplest implementation of the hysteretic  
converter, shown in Figure 1, the frequency also varies propor-  
tionally with the ESR of the output capacitor. Since the initial value  
is often poorly controlled, and the ESR of electrolytic capacitors  
also changes with temperature and age, practical ESR variations  
can easily lead to a frequency variation on the order of three to  
one. However, using the ADP3422 controller in a modified  
hysteretic topology eliminates the dependence of the operating  
frequency on the ESR. In addition, the modification allows the  
optimal implementation, ADOPT, of the Intels IVMP-2 load-line  
specification. Figure 2 shows the modified hysteretic regulator.  
It can be seen from (4) that unless RD is zero or RC is infinite,  
RCS will be always smaller than RE. An advantage of the circuit  
of Figure 2 is that if we select the ratio RD/RC well above unity,  
the additional dissipation introduced by the series resistance RCS  
will be negligible. Another interesting feature of the circuit in  
Figure 2 is that the ac voltage across the two inputs of the hys-  
teretic comparator is now equal only to the ac voltage across  
RCS. This is due to the presence of the capacitor COC, which  
effectively couples the ac component of the output voltage to the  
noninverting input voltage of the comparator. Since the com-  
parator sees only the ac voltage across RCS, in the circuit of  
Figure 2 the dependence of the switching frequency on the ESR  
of the output capacitor is completely eliminated. Equation (5)  
presents the expression for the switching frequency.  
RCS (VIN VOUT )VOUT  
f =  
(5)  
LVH  
VIN  
–10–  
REV. 0  
ADP3422  
Figure 3. Application Circuit  
–11–  
REV. 0  
ADP3422  
Application Schematic  
The final step in finishing the design of the power stage is select-  
ing the output capacitors. There are two primary considerations  
in choosing those capacitors. The total ESR may not exceed the  
output resistance required by Intels IMVP-2 specification. Also  
the total capacitance must be checked to make sure that it is  
sufficient to prevent overshoot beyond the voltage step caused  
by the ESR during a full load transient, according to the formula:  
Figure 3 shows the simplified application schematic of the  
ADP3422 control IC. The ADP3422, together with its com-  
panion dual MOSFET driver IC, the ADP3415, controls a  
hysteretic converter that generates the core voltage for the CPU.  
Design Procedure—Power Stage Components  
The first step of the converter design is to select the MOSFETs  
to be used based on acceptable dc and switching losses. For this  
selection, the designer is referred to the MOSFET manufac-  
turers who may provide not only a recommendation for the  
MOSFETs to be used for the specific application, but also  
data and/or guidelines for determining an acceptable maxi-  
mum operating frequency.  
L ×(IO(MAX ) IO(MIN )  
ROUT ×VL  
)
CO(MIN )  
=
(8)  
where IO(MIN) is the minimum rated current for the normal  
operation region of the CPU where IO(MAX) can occur, and VL is  
the voltage applied across the inductor in order to ramp the  
current in the direction of the load step. The minimum CPU  
voltage represents a critical performance limit that must not be  
violated during a load step increase. Therefore, the minimum  
capacitance must never be less than the calculated value when  
using VL = VI(MIN) VVID in (8) the voltage applied across the  
inductor to ramp up the current. However, overshoot would still  
occur unless the capacitance is greater than the calculated value  
when using VL = VVID in (8). The magnitude of the overshoot is  
given by:  
With this information, the next step is to choose an inductance  
valueusually the smallest available value, that will yield an  
acceptable ripple current. A ripple current 30%~60% of the  
maximum core current is recommended. Inductance, frequency,  
and ripple current are related by formula (6), derived from (5):  
1
(VIM VVID )VVID  
L =  
(6)  
fMAX IRPP  
VIM  
where:  
L
CO  
IRPP 2  
2
VOS  
=
IO(MAX )  
+
IO2 (MIN ) + VVID ROUT IO(MAX ) VVID  
[
]
L = inductance value  
MAX = maximum acceptable switching frequency  
RPP = selected peak-to-peak ripple current  
(9)  
2
f
For this design example, output capacitors with a capacitance  
of 150 µF and a maximum ESR of 20 mare chosen. Given  
the target of ROUT = 4 m, five capacitors would be needed to  
achieve a total ESR of not more than 4 m. The total capaci-  
tance of five of these capacitors is 750 µF. This capacitance is  
greater than the value required for a load step increase, even  
for an input voltage as low as 6 V; but it is less than what is  
needed to prevent an overshoot for a load step decrease, where  
only the output voltage is applied across the inductor to ramp  
down the current to the minimum value. Assuming that the  
minimum current is zero, the overshoot above VVID is 89 mV.  
I
V
V
IM = maximum input voltage  
VID = nominal programmed VID voltage  
Assuming fMAX = 250 kHz, IRPP = 8 A, VIM = 20 V, and  
VID = 1.25 V, the required inductance value is L = 729 nH.  
V
A standard value of 660 nH is available.  
The next step is to select the current sensing resistor, RCS. The  
restrictions are that (1) the resistance should not be higher than  
the core converter output impedance defined by Intels IMVP-2  
specification, and (2) the resistance should not be so low that  
the errors in reading the current sense signal become a problem.  
The IMVP-2 specification requires that the converter output  
impedance, ROUT, be 4 m. An RCS value of above one-quarter  
of the nominal output impedance provides sufficient protection  
against errors in the current sense signal. The chosen value is  
RCS = 1.5 m.  
Design Procedure—Control Circuit Components  
The output resistance is implemented by using the proper ratio  
of two resistors, which connect to the REG pin. One resistor,  
RD, connects to the DAC reference and the other, RC, connects  
to the core voltage. From (2):  
RD RE RT RCS  
=
(10)  
Also, the power dissipation, PCS, should be calculated to ensure  
that a properly sized resistor is selected:  
RC  
RCS  
where RT is the PCB trace resistance between the current sense  
resistor and the CPU measurement point.  
PCS = RCS IO2 (MAX )  
(7)  
There is no inherent restriction on the absolute value of either  
RD or RC, but values in the single krange are recommended.  
These resistors can now be selected.  
where IO(MAX) is the maximum output current. In this design  
example IO(MAX) = 19 A. The resulting dissipation of the current  
sense resistor is 542 mW.  
–12–  
REV. 0  
ADP3422  
A capacitor is required across RC to achieve optimal compensation.  
This ensures that the output voltage does not bounce back tempo-  
rarily right after a load transient, i.e., the output impedance of  
the converter is purely resistive. The bounce-back is undesirable  
because it increases the peak-to-peak deviation in the output  
voltage. From (3), the optimal capacitance value is:  
The second shift is for optimizing the output voltage when the  
Deep Sleep operating mode is selected in conjunction with  
either the POM or BOM VID codes. This shift is achieved by  
connecting a resistor, RDSHIFT, between the DSHIFT pin and  
ground. The shift will be used whenever the DPSLP pin is  
driven low. The shift is given by:  
CORE  
RCRD  
RA  
RDSHIFT  
RD  
RC  
COC  
=
(11)  
VDSHIFT  
=
V
1+  
VID , BOM   
(15)  
At this point, the exact COC value should be selected as close to  
the calculated one as possible. It is generally recommended to  
choose the nearest value of COC which is not greater than what  
is calculated. Optionally, COC can be chosen first arbitrarily and  
the values of RD and RC can be reselected to satisfy the previous  
two equations.  
PRINTED CIRCUIT BOARD LAYOUT  
CONSIDERATIONS  
The following guidelines are recommended for optimal perfor-  
mance of the ADP3422 and ADP3415 in a power converter.  
The circuitry is considered in three parts: the power switching  
circuitry, the output filter, and the control circuitry.  
The output impedance is now set.  
Placement Overview  
The next step in the design is to determine the value of the  
hysteresis-setting resistor, RA, which sets the inductor ripple  
current. RA connects between the RAMP pin and RCS on the  
inductor side and is determined by:  
1. For ideal component placement, the output filter capacitors  
will divide the power switching circuitry from the control  
section. As an approximate guideline, considered on a  
single-sided PCB, the best layout would have components  
aligned in the following order: ADP3415, MOSFETs and  
input capacitor, output inductor, current sense resistor, output  
capacitors, control components and ADP3422. Note that  
the ADP3422 and ADP3415 are completely separated for  
an ideal layout, which is only possible with a two-chip solution.  
This will minimize jitter in the control caused by having the  
driver and MOSFETs close to the control and give more  
freedom in the layout of the power switching circuitry.  
IRPP RCS VIMtD(OFF )RCS /L  
RA  
=
(12)  
2IH  
where tD(OFF) is the turn-off delay time of the power converter,  
including delays through the ADP3422, ADP3415, and the  
external MOSFETs, and IH is a user-programmed current set  
by a resistor on the ADP3422s HYSSET pin, which sets the  
current that is hysteretically switched in and out of the RAMP  
pin. Assuming a turn-off delay of 50 ns and a hysteresis-setting  
current of 30 µA, the calculated value of RA is 162 .  
2. Whenever a power dissipating component (e.g., a power  
MOSFET) is soldered to a PCB, the liberal use of vias, both  
directly on the mounting pad and immediately surrounding  
it, is recommended. Two important reasons for this are:  
improved current rating through the vias (if it is a current  
path), and improved thermal performanceespecially if  
the vias extend to the opposite side of the PCB where a  
plane can more readily transfer heat to air.  
To protect the converter, the hysteretic current limiting should  
be set. The current limit programming resistor, RCL, which  
connects between the CSpin and the core output is given by:  
kI RCS(IO(MAX ) + IRPP /2)  
RCL  
=
(13)  
3IH  
where kI is a margin factor for the current limit setting. A  
Power Switching Circuitry  
ADP3415, MOSFETs, and Input Capacitors  
3. Locate the ADP3415 near the MOSFETs so the parasitic  
inductance in the gate drive traces and the trace to the SW  
pin is small, and so that the ground pins of the ADP3415  
are closely connected to the lower MOSFETs source.  
typical value for kI might be 1.15, which would set the current  
limit point 15% above the maximum rated core current. Using  
the preceding design target values, a value of 441 for RCL is  
calculated.  
In order to optimize the power savings by always using the  
minimum allowed CPU supply voltage, the IMVP-2 specifica-  
tion introduces two operating-mode-dependent voltage shifts.  
The first shift is for optimizing the output voltage when the  
battery-optimized-mode (BOM) VID code is selected. The  
shift is achieved by connecting a resistor, RBSHIFT, between  
the BSHIFT pin and ground. The shift will be used whenever  
the BOM pin is driven low, indicating that the BOM VID  
code is selected. The shift is given by:  
4. Locate at least one substantial (i.e., > ~10 µF) input bypass  
MLC capacitor close to the MOSFETs so that the physical  
area of the loop enclosed in the electrical path through the  
bypass capacitor and around through the top and bottom  
MOSFETs (drain-source) is small. This is the switching  
power path loop.  
5. Make provisions for thermal management of all the  
MOSFETs. Heavy copper and wide traces to ground and  
power planes will help to pull the heat out. Heat sinking  
by a metal tap soldered in the power plane near the  
MOSFETs will help. Even just small airflow can help  
tremendously. Paralleled MOSFETs will help spread the  
heat, even if the on-resistance is higher.  
RA  
RBSHIFT  
RD  
RC  
VBSHIFT  
=
V
1+  
VID , BOM   
(14)  
REV. 0  
–13–  
ADP3422  
6. An external antiparallelschottky diode (across the bottom  
MOSFET) may help efficiency a small amount (< ~1 %); a  
MOSFET with a built in antiparallel schottky is more effec-  
tive. For an external schottky, it should be placed next to  
the bottom MOSFET or it may not be effective at all. Also,  
a higher current rating (bigger device with lower voltage  
drop) is more effective.  
14. Absolutely avoid crossing any signal lines over the switching  
power path loop, described previously.  
15. Accurate voltage positioning depends on accurate current  
sensing, so the control signals which monitor the voltage  
differentially across the current sense resistor should be  
kelvin connected.  
16. The RC filter used for the current sense signal should be  
located near the control components.  
7. The ground pin of the ADP3415 should be connected into  
the power switching circuitry ground plane, and the VCC  
bypass capacitor should be close to the VCC pin and con-  
nected into the same ground plane.  
Table I. VID Code  
VID4  
VID3  
VID2  
VID1  
VID0  
VVID  
Output Filter  
Output Inductor and Capacitors, Current Sense Resistor  
8. Locate the current sense resistor very near to the output  
capacitors.  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1.750  
1.700  
1.650  
1.600  
1.550  
1.500  
1.450  
1.400  
1.350  
1.300  
1.250  
1.200  
1.150  
1.100  
1.050  
1.000  
0.975  
0.950  
0.925  
0.900  
0.875  
0.850  
0.825  
0.800  
0.775  
0.750  
0.725  
0.700  
0.675  
0.650  
0.625  
0.600  
9. PCB trace resistances from the current sense resistor to the  
output capacitors, and from the output capacitors to the  
load should be minimized, known (calculated or measured),  
and compensated for as part of the design if it is significant.  
(Remote sensing is not sufficient for relieving this require-  
ment!) A square section of 1-ounce copper trace has a  
resistance of ~500 mW. Using 2~3 squares of copper can  
make a noticeable impact on a 15 A design.  
10. Whenever high currents must be routed between PCB layers,  
vias should be used liberally to create several parallel current  
paths so that the resistance and inductance introduced by  
these current paths is minimized and the via current rating is  
not exceeded.  
11. The ground connection of the output capacitors should be  
close to the ground connection of the lower MOSFET and  
it should be a ground plane. Current may pulsate in this  
path if the power source ground is closer to the output  
capacitors than the power switching circuitry, so a close  
connection will minimize the voltage drop.  
Control Circuitry  
ADP3422, Control Components  
12. If the placement overview cannot be followed, then in order  
to avoid introducing ground noise from the power switching  
stage into the control circuitry, the ground pin of the  
ADP3422 should be Kelvin-connected into the ground plane  
near the output capacitors. All other control components  
should be grounded on that same signal ground.  
13. If critical signal lines (i.e., signals from the current sense  
resistor leading back to the ADP3422) must cross through  
power circuitry, it is best if a signal ground plane can be  
interposed between those signal lines and the traces of the  
power circuitry. This serves as a shield to minimize noise  
injection into the signals at the expense of making signal  
ground a bit noisier.  
–14–  
REV. 0  
ADP3422  
OUTLINE DIMENSIONS  
Dimensions shown in inches and (mm).  
28-Lead Thin Shrink Small Outline Package (TSSOP)  
(RU-28)  
0.386 (9.80)  
0.378 (9.60)  
28  
15  
0.177 (4.50)  
0.169 (4.30)  
0.256 (6.50)  
0.246 (6.25)  
1
14  
PIN 1  
0.006 (0.15)  
0.002 (0.05)  
0.0433 (1.10)  
MAX  
8؇  
0؇  
0.0256 (0.65) 0.0118 (0.30)  
BSC  
0.028 (0.70)  
0.020 (0.50)  
SEATING  
PLANE  
0.0079 (0.20)  
0.0035 (0.090)  
0.0075 (0.19)  
REV. 0  
–15–  
–16–  

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